An Analysis Of Flash And HDD Technology Trends Edward Grochowski EdwGrochowski@aol.com Computer Storage Consultant San Jose, CA 95120 Robert E. Fontana, Jr. rfontan@us.ibm.com Almaden Research Center IBM Systems Technology Group San Jose, CA 95120 Single Bit Charge Storage e - Control Gate Floating Gate Floating Gate SLC (2 voltage levels) August 2011 1
Introduction and Topics 1. Analyze StorageTechnology Trends For Flash and HDD 2. Project To Where These Principal Storage Technologies Will Evolve 3. Discuss Concerns With These Evolutions 4. Project Data Densities 5. Project Costs per Gbyte 6. Analyze Lithography Challenges 7. Future Designs for Flash/HDD August 2011 2
Exabytes Shipped/Year Free-format slide title 4000.00 3500.00 HDD (Ref. Coughlin/Grochowski 2010 Report) NAND Flash (Ref. John Monroe, Gartner) 3000.00 2500.00 2000.00 HDD NAND Flash 1500.00 30X 1000.00 500.00 0.00 2000 02 04 06 08 10 12 14 100 102 104 106 108 110 112 114 Ed Grochowski/Tom Coughlin TB2010Y.PRZ Production Year August 2011 3
2.5 inch 10000 750GB Server 10K RPM 2000 GB Desktop 7200 RPM 300 GB Server 15K RPM HDD Capacity, GBytes 1000 3.5 f form inch r acto 300 GB 36GB Server 15K RPM 100 i 2.5 inch 1.8 nch 8.1 GB HDD roadmap2010b.prz 750 GB 1 TB 5TB Desktop/Laptop 7200 RPM 250 GB 12 GB 20 GB 10 August 2011 10TB Desktop 7200 RPM 1-2TB Server 10K-15K RPM 1.0 4 GB h inc HDD CapacityRoadmap 1 GB 1 98 2000 100 02 102 04 104 06 106 08 108 Availability Year 2010 110 12 112 14 114 Ed Grochowski/Tom Coughlin 4
Circuit Capacity Mbits Projected NAND Flash Memory Circuit Density Roadmap 1000000 Floating Gate Advanced Technology 100000 10000 1000 100 SLC MLC 128 Gb 15 nm est. 80 Gb 24 nm 64 Gb 24 nm 16 Gb 45 nm 8 Gb 65 nm 4 Gb 90 nm 2 Gb 90 nm 1 Gb 130 nm 512 Mb 180 nm 256 Mb 250 nm 64 Mb 250 nm 32 Mb 400 nm 16 Mb 600 nm 10 1990 1995 2000 2005 2010 2015 2020 Production Year Charge Trap NAND Roadmap 2011X.prz August 2011 5
Areal Density GIgabits/in2 Free-format slide title 10 1E+7 104 4 HDD/Flash Areal Density Perspective 4K Sector Region 1E+6 103 10 3 1E+5 10 102 2 1E+4 10 10 1 1E+3 1 1 1st MR Head HDD Products Flash Products 1st GMR Head 60% CGR 1st AFC Media 100% CGR Perpendicular Recording 256MB 512MB 1 GB TMR Head 40% CGR 2 GB 4 GB 8 GB 8 GB 20nm 64 GB (3 MLC?) 32 GB (2 MLC) 16 GB (2 MLC) 1E+2 10-1 10-1 16MB 64MB Copyright Ed Grochowski areal2011ega.prz 10 1E+1-2 10-2 90 95 100 2000 2005 105 110 2010 115 2015 Production Year August 2011 6
Price/GByte, Dollars 100000 10000 1000 DRAM/Flash Enterprise HDD 1 " HDD Average Retail Prices of Storage DRAM Flash Desktop Mobile Enterprise 1" 100 oemprc2009a.prz Price $/GB oemprc2011b.prz 10 1 Ed Grochowski 0.1 Mobile HDD 32 GB Flash Desktop HDD 300 GB/15K Server 750 GB Desktop 500 GB Mobile Drive 1.5TB Desktop 2TB Desktop 3 TB Desktop 0.01 1990 1995 2000 2005 2010 2015 Year August 2011 7
Magnetic Recording Cell The unique attribute of the magnetic bit cell in a hard disk drive (HDD) is that the bits are unpatterned tremendous cost advantage The bit length is sub lithographic Bits are magnetically templated into the media using a single photo lithographically defined magnetic transducer Bit width is determined by the lithography used to form the write transducer. The smallest lithographically defined feature in the magnetic head is the read transducer ~ ½ Track Pitch = F Bit length is determined without lithography! It is sub lithographic! It is defined by the distance the disk rotates during the time interval that alternating current pulses are applied to the write yoke. Bit length is limited by the resolution of the sensor, i.e. the read gap with dimensions G determined by depositions, not lithography An HDD Product Example (635 Gbit/in² Areal Density) Minimum Lithography 37 nm = F August 2011 Bit Cell 74 nm x 13 nm 8 Smallest Bit Feature 13 nm ~ 33% F, ~ 50% IC F
Three Major HDD Innovations August 2011 9
HDD Shingled Write 1. Is A Band Technology, Not A Sector Or Track (Marginally) 2. Ideally Suited For Streaming Applications (>>Gbyte Movies) 3. Many Potential Ideas For Writing Tracks 4. Requirement For Correct Choices On Buffer Tracks And Band Sizes 5. Involves Rewriting On Disk Or Buffer electronics Within Drive 6. If Changes To OS Or System Electronics, Delays Are Probable, If Drop-in Technology, Applications Will Arrive Soon August 2011 10
Cell Size Comparison 8GB NAND Flash 8GB NAND Flash 375 GB 1 surface HDD Surface Dimensions (Chip or Disk) 16.5 mm x 10.1 mm 12.5 mm x 9.5 mm 87.0 mm disk diameter 24.0 mm hub diameter 1.5 mm edge exclusions Memory Surface Area 167 mm² 118 mm² 5491 mm² Active Memory Area ~ 122 mm² (73%) ~ 71 mm² (65%) ~ 4969 mm² (90%) Minimum Lithography F = 25 nm F = 20 nm F = 37 nm Active Bit Cell Area 1906 nm² = 3.0 F² 1109 nm² = 2.8 F² 981 nm² = 0.7 F² Bit Cell Dimension 44 nm x 44 nm 33 nm x 33 nm 74 nm x 13 nm Maximum Areal Density 330 Gb/in² 560 Gb/in² 635 Gb/in² August 2011 11
Lithography and NAND Flash Typical NAND cells formed with sub 30 nm lithography with Intel- Micron providing leading edge devices at 25 nm to 20 nm Bit cell area approaches 2.5 F² (F is the minimum lithographic feature) for Self Aligned STI multi level (2 bit per cell) designs HDD cells formed with minimum features close to DRAM requirements Patterned Media cells will require substantial invention in lithography to meet density goals Multi Level NAND Cell August 2011 12
As specified MTBF, khrs. MTBF Specifications Enterprisebased Flash 2200 2000 1800 1600 Ed Grochowski MTBF2011B.prz 1400 HDD 1200 1000 Consumer-based Flash 800 600 400 200 Industry HDD MTBF Specifications 0 1985 1990 1995 2000 2005 2010 2015 2020 Product Ship Date August 2011 13
No. Electrons per Vt Shift Flash Scaling 10000 1000 Lithography nm 130 90 64 51 40 32 20 18 16 14 12 FG Flash Electrical Scaling Challenges Based on Chung Lam (IBM Research) 100 Flashchal2011B.prz 10 1 Flash Chip Capacity (GBytes) 0.08 0.12 0.25 0.50 1.0 2.0 4.0 8.0 16.0 25.0 64.0 120.0 2000 2005 2010 2015 2020 Year August 2011 14
New Transistor Designs August 2011 15
Flash Scaling Challenges 1. >15 nm Lithography (EUV Technology Too Expensive For Flash, Also HDD) 2. Fewer Electrons >> 100 (Leakage >1 Electron Per Month) 3. Electric Field Stress During Programming Too High 4. Write Endurance Degrades August 2011 16
Conclusion 1. Expect Significantly Reduced Scaling And Capacity Progress- Flash And HDD-In Future 2. New Processing And Structural Techniques Limited By Implementation Costs 3. Storage Requirements Will Continue Vigorous Demands For Both Flash And HDD Products 4. Door Is Open For Alternative Technologies (FeRam, MRAM Are Imbedded Technologies; PCM Is Crosspoint) August 2011 17