Resonant LLC Converter: Operation and Design

Transcription

1 Application Note AN -9 V. Septembe Resonant LLC Convete: Opeation and Design 5W Vin Vout Design Example Sam Abdel-Rahman Infineon Technologies Noth Ameica (IFNA) Cop.

2 Application Note AN -9 V. Septembe Resonant LLC Convete: Opeation and Design Sam Abdel-Rahman Published by Infineon Technologies Noth Ameica 77 Empeo Blvd, suite Duham, 77 All Rights Reseved. Attention please! THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMEN- TATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (ILUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Infomation Fo futhe infomation on technology, delivey tems and conditions and pices please contact you neaest Infineon Technologies Office ( Wanings Due to technical equiements components may contain dangeous substances. Fo infomation on the types in question please contact you neaest Infineon Technologies Office. Infineon Technologies Components may only be used in life-suppot devices o systems with the expess witten appoval of Infineon Technologies, if a failue of such components can easonably be expected to cause the failue of that life-suppot device o system, o to affect the safety o effectiveness of that device o system. Life suppot devices o systems ae intended to be implanted in the human body, o to suppot and/o maintain and sustain and/o potect human life. If they fail, it is easonable to assume that the health of the use o othe pesons may be endangeed. AN -9 V. Septembe Autho: Sam Abdel-Rahman We Listen to You Comments Any infomation within this document that you feel is wong, unclea o missing at all? You feedback will help us to continuously impove the quality of this document. Please send you poposal (including a efeence to this document) to: [[email protected]]

3 Application Note AN -9 V. Septembe Table of contents Intoduction... Oveview of LLC Resonant Convete... Design Steps...8 Bidge and Rectifie Selection... 5 Design Example... 6 Schematics and Bill of Mateial Refeences...9

4 Application Note AN -9 V. Septembe Intoduction While a esonant LLC convete has seveal desied featues such as high efficiency, low EMI and high powe density, the design of a esonant convete is an involved task, and equies moe effot fo optimization compaed to PWM convetes. This document aims to simplify this task, and make it easie to optimally design the esonant tank. This document povides an oveview of LLC convete opeation and design guidelines. Finally, a compehensive design example is given along with schematics, bill of mateials, expeimental esults and wavefoms. Oveview of LLC Resonant Convete This section offes an oveview of the LLC convete opeation and wavefoms in the diffeent modes. Figue. shows a Full-Bidge LLC convete with Full-Bidge ectifie. In a simplistic discussion, the switching bidge geneates a squae wavefom to excite the LLC esonant tank, which will output a esonant sinusoidal cuent that gets scaled and ectified by the tansfome and ectifie cicuit, the output capacito filtes the ectified ac cuent and outputs a DC voltage. Switching bidge LLC tank Tansfome and Rectifie Output Capacito S S S S + Vsw - C L Lm Np Ns D D D D Co Ro + Vo -. Convete Voltage Gain Figue. Full-Bidge LLC convete with Full-Bidge ectifie Convete gain= switching bidge gain * esonant tank gain * tansfome tun atio (Ns/Np) Whee the switching bidge gain is fo a Full-Bidge and.5 fo a Half-Bidge. The esonant tank gain can be deived by analyzing the equivalent esonant cicuit shown in Figue., the esonant tank gain is the magnitude of its tansfe function as in Eq.. C L Vin_ac Lm Rac Vo_ac Figue. Equivalent esonant cicuit K( Q, m, F x ) V in _ ac m F F m Q o _ ac m Eq. V ( s) ( s) x x

5 Application Note AN -9 V. Septembe Whee, Q L R ac C Quality facto R 8 N P ac N S f s f f L C R o Reflected load esistance Nomalized switching fequency Resonant fequency m L L L m Ratio of total pimay inductance to esonant inductance One can plot the esonant tank gain K with the nomalized switching fequency fo diffeent values of Quality facto Q and any single value of m, as shown in Figue.. The selection of the m value will be discussed in a late section of this document, but m=6 was used as an example. It can be seen in Figue. that low Q cuves belong to lighte load opeation while highe Q cuves epesent heavie loads. It s also seen that all Q cuves (load conditions) coss at the esonant fequency point (at = o fs=f) and have a unity gain. Figue. shows that all gain cuves has peaks which define the bounday between the inductive and capacitive impedances of the esonant tank, hence we can define the inductive and capacitive opeation egions as shaded in the plot, the objective of defining both egions is because it is desied to maintain an inductive opeation acoss the entie input voltage and load cuent anges, and neve fall into the capacitive egion opeation. Such equiement is due to that Zeo Voltage Switching (ZVS) is only achieved in the inductive egion, in addition to that capacitive opeation means that cuent leads the voltage, so the cuent in the MOSFET will evese diection befoe the MOSFET tuns off, then afte the MOSFET tuns off the evese cuent will flow in the MOSFET s body diode, which will cause a body diode had commutation once the othe MOSFET in the bidge tuns on, which in tun will cause evese ecovey losses and noise, and might cause high cuent spikes and device failue. The capacitive opeation can be pevented and will be discussed in a late section of this document. K (., m, ) K (., m, ) Capacitive egion K (.5, m, ) ZCS K (.7, m, ) K (, m, ) K ( 5, m, ) Light load m=6 Inductive egion ZVS Heavy load. Figue.. Modes of Opeation Since the LLC netwok gain is fequency modulated, the convete can opeate in thee modes depending on input voltage and load cuent conditions, as listed below and shown in Figue.: 5

6 Application Note AN -9 V. Septembe. At esonant fequency opeation, fs=f.. Above esonant fequency opeation fs>f.. Below Resonant fequency opeation, fs<f. K (., m, ) K (, m, ) Below esonance At esonance Above esonance. Figue. Despite the afoementioned thee modes; which will be explained in details late in this section; the convete has only two possible opeations within the switching cycle, as descibed below. And each of the modes pointed out above may contain one o both of these opeations. ) Powe delivey opeation, which occus twice in a switching cycle; fist, when the esonant tank is excited with a positive voltage, so the cuent esonates in the positive diection in the fist half of the switching cycle, the equivalent cicuit of this mode is shown in Figue.5, and second occuance is when the esonant tank is excited with negative voltage, so the cuent esonates in the negative diection in the second half of the switching cycle, the equivalent cicuit of this mode is shown in Figue.6. Duing the powe delivey opeations, the magnetizing inducto voltage is the positive/negative eflected output voltage and the magnetizing cuent is chaging/dischaging espectively. The diffeence between the esonant cuent and the magnetizing cuent passes though the tansfome and ectifie to the seconday side, and powe is deliveed to the load. S S S S C L Lm Np Ns D D D D + Vo - S S S S C L Lm Np Ns D D D D + Vo - Figue.5 Figue.6 ) Feewheeling opeation, which can occus following the powe delivey opeation only if the esonant cuent eaches the tansfome magnetizing cuent, this only happens when fs<f, causing the tansfome seconday cuent to each zeo and the seconday side ectifie to disconnect, consequently the magnetizing inducto will be fee to ente the esonance with the esonant inducto and capacito, the fequency of this second esonance is smalle than the oiginal esonant fequency f, especially at high values of m whee Lm>>L, thus the pimay cuent duing the feewheeling opeation will only change slightly, and can be appoximated to be unchanged fo simplicty. The equivalent cicuits of the feewheeling opeation in both halves of the switching cycle ae shown in Figue.7 and Figue.8. 6

7 Application Note AN -9 V. Septembe S S S S C L Lm Np Ns D D D D + Vo - S S S S C L Lm Np Ns D D D D + Vo - Figue.7 Figue.8 Table explains the convete modes of opeation and shows key wavefoms Table At Resonant fequency opeation fs=f. Each half of the switching cycle contains a complete powe delivey opeation (descibed above), whee the esonant half cycle is completed duing the switching half cycle. By end of the switching half cycle, the esonant inducto cuent I L eaches the magnetizing cuent I Lm, and the ectifie cuent eaches zeo. The esonant tank has unity gain and best optimized opeation and efficiency, theefoe, tansfome tuns atio is designed such that the convete opeates at this point at nominal input and output voltages. Above esonant fequency opeation fs>f. Each half of the switching cycle contains a patial powe delivey opeation (descibed above), simila to the esonant fequency opeation, but it diffes in that the esonant half cycle is not completed and inteupted by the stat of the othe half of the switching cycle, hence pimay side MOSFETs have inceased tun off losses and seconday ectifie diodes have had commutation. The convete opeates in this mode at highe input voltage, whee a step down gain o buck opeation is equied. Below esonant fequency opeation fs<f Each half of the switching cycle contains a powe delivey opeation (descibed above), at the time when esonant half cycle is completed and esonant inducto cuent I L eaches the magnetizing cuent, the feewheeling opeation (as descibed above) stats and caies on to the end of the switching half cycle, hence pimay side have inceased conduction losses due to the ciculating enegy. The convete opeates in this mode at lowe input voltage, whee a step up gain o boost opeation is equied. Ts/ Ts=/fs Ts/ Ts=/fs T/ Ts/ Ts=/fs S,S S,S Vin S,S S,S Vin S,S S,S Vin V ds_s,s V ds_s,s V ds_s,s I L I Lm I L I Lm I L I Lm I D,D I D,D I D,D I D,D t I D,D t I D,D t 7

8 Application Note AN -9 V. Septembe Design Steps This section is to explain the impact of design paametes on voltage egulation and efficiency pefomance, and facilitate the design and selection of such paametes. Ou ultimate design objective it to achieve the best pefomance while eaching the gain equiement fo all line and load conditions. And fo safe opeation, we must detemine the minimum switching fequency the contolle shall limit in ode to maintain the opeation in the inductive egion. The following ae detailed explanation of all design steps; additionally Figue. shows a design flow chat that summaizes the design methodology. START Step : Select Qmax value Step : Select m value Step : Find min Incease m value Decease m value Yes Step : Find K max No Is K max < equied gain? No Is K max = equied gain? Yes Step 5: Solve fo esonant components values END Step : Selecting the Qmax Value Quality facto Q L R ac C Figue. Design flow chat depends on the load cuent. Heavy load conditions opeate at high Q values, while lighte loads have lowe Q values. It is impotant to set a value fo the Qmax associated with the maximum load point. To illustate the effect of the Q value on voltage egulation, Figue. shows an example voltage gain plot fo diffeent Q values. Let s assume that the esonant tank gain is equied to ange fom.8 to. fo example, we can see that the low Q value cuve (Q=.) can each highe boost gain, but it is less sensitive to fequency modulation in the above esonance fs>f egion, hence, switching fequency has to incease much in ode to each the minimum voltage gain (K=.8), causing exta switching losses, while the highe Q 8

9 Application Note AN -9 V. Septembe value cuve (Q=) can each the minimum gain (K=.8) with less switching fequency incease, but unable to each the maximum gain (K=.). Theefoe, a modeate Q value of aound.5 seems to satisfy the voltage gain equiement in this specific case. We conclude that adjusting the Q value can help achieving the maximum gain but inceases the fequency modulation ange, thus, we should not ely on tuning the Qmax value as a design iteation in ode to each the desied maximum voltage gain, but instead we should ely on tuning the m value as will be explained in the next step. Although thee isn t a diect method fo selecting the optimum Q value, we should select Qmax modeately as discussed ealie and based on the specific design in hand. K (.m ).5 K (.5m ) K ( m )..8.5 Step : Selecting the m Value As mentioned above, L L m L. m Figue., m is a static paamete that we have to stat the design by optimizing its value, theefoe it s impotant to undestand the impact of the m atio on the convete opeation. To illustate the effect of the m value, Figue. shows the same esonant tank gain plots but fo diffeent m values, m=, 6 and. It is obvious that lowe values of m can achieve highe boost gain, in addition to the naowe ange of the fequency modulation, meaning moe flexible contol and egulation, which is valuable in applications with wide input voltage ange. Nevetheless, low values of m fo the same quality facto Q and esonant fequency f means smalle magnetizing inductance Lm, hence, highe magnetizing peak-peak cuent ipple, causing inceased ciculating enegy and conduction losses. We have to stat by selecting a easonable initial value fo m (6-), and then optimize it by few iteations to get the maximum m value that can still achieve the maximum gain equiement fo all load conditions. Low m value: Highe boost gain Naowe fequency ange Moe flexible egulation High m value: Highe magnetizing inductance Lowe magnetizing ciculating cuent Highe efficiency x. K (., m, ) K (., m, ) K (.5, m, ) m= K (., m, ) K (., m, ) K (.5, m, ) m=6 K (., m, ) K (., m, ) K (.5, m, ) m= K (.7, m, ) K (.7, m, ) K (.7, m, ) K (, m, ) K ( 5, m, ) K (, m, ) K ( 5, m, ) K (, m, ) K ( 5, m, ).. Figue.. 9

10 Application Note AN -9 V. Septembe Step : Finding the Minimum Nomalized Switching Fequency Afte selecting a value fo Qmax and an initial value fo m, we need to find the minimum nomalized switching fequency that will guaantee inductive opeation fo the Qmax (max load) condition, this minimum fequency will also guaantee inductive opeation fo all othe loads. The minimum nomalized switching fequency occus at the peak gain of the Qmax cuve, so it can be found by solving Eq. (assumed Qmax=. and m=6 as an example), o can be visually spotted in the gain plot as in Figue.. d d K( Q, m, min ) Q max., m6 Eq. Solve fo min K (., m, ) Light load m=6 K (.5, m, ) K (., m, ) K (., m, ) Max load cuve (Qmax=.) K (.6, m, ) K ( 5, m, ). min Figue. Step : Voltage Gain Veification This step is to veify that the maximum gain K max eached duing maximum load by the selected m value is adequate. This can be done by solving Eq., o can be visually spotted in the gain plot as in Figue.. K K Q, m, ) Eq. max ( max min K (.m ) Light load m=6 K (.5 m ) K (.m ) K (.m ) K max Max load cuve (Qmax=.) K (.6m ) K ( 5 m ). min Figue.5

11 Application Note AN -9 V. Septembe Few iteations ae needed in ode to each the optimized design, as shown in the design flow chat in Figue.. If K max is not enough, then we have to educe the m value and epeat steps and, in ode to gain a highe boost gain. On the othe side, If K max is highe than what is equied; in that case we can incease the m value and epeat steps and in ode to gain a bette efficiency. Step 5: Calculating Resonant Components Values Afte few iteations of the design flow and eaching the optimum m value, we can poceed to calculating the esonant tank components values, Eq. and Eq. 5 can be solved to find L and C, and then L m can be calculated using Eq. 6. R ac,min 8 L N N C P S V P o o max Qmax Eq. Rac,min f m L C L L L Eq. 5 m Eq. 6 It must be noted that selection of the esonant fequency f was not consideed in the design steps above, since it has no impact on the maximum gain and opeation egion of the esonant convete, howeve it is selected consideing the convete powe density and powe losses. Bidge and Rectifie Selection An impotant step to achieve the best convete pefomance is to choose the ight bidge and ectifie cicuits. LLC convetes can be implemented with a full-bidge o a half-bidge cicuit on the pimay side, as shown in Figue., S S C S S S C S Full-bidge switching cicuit Figue. Half-bidge switching cicuit Table shows a compaison between the half-bidge and the full-bidge switching cicuits. A half-bidge would have twice the cuent of what a full-bidge would have, the squaed ms cuent in the half-bidge case is fou times, the numbe of switches in a half bidge is half of that in a full-bidge, theefoe, the total FETs conduction losses of a half-bidge is twice compaed to the full-bidge. Although a half-bidge equies half the pimay numbe of tuns fo the same voltage gain and magnetic flux swing, thus half the pimay winding esistance, the pimay coppe losses ae still twice compaed to the fullbidge because the squaed ms cuent in the half-bidge case is fou times. So in applications with high pimay cuents, whee conduction losses ae dominant, it is suggested to use a full-bidge switching cicuit.

12 Application Note AN -9 V. Septembe Table Pimay Bidge - Half-Bidge compaed to Full-Bidge I ms I ms Numbe of FETs Total FETs conduction losses N p R pi Tansfome pimay coppe loss *Compaison assumes same FET and same tansfome coe LLC convetes can also be implemented with a full-bidge o a full-wave ectifie cicuit on the seconday side, as shown in Figue. D Np Ns D D D D Co + Vo - Np Ns Ns + Vo - D Full-bidge ectifie Figue. Full-wave ectifie Table shows a compaison between the full-bidge and full-wave ectifies. A full-wave ectifie equies diodes that ae twice the voltage ating compaed to a full-bidge ectifie, but it has only two diodes while the full-bidge ectifie has fou diodes, since each diode in both ectifie cicuits caies the same aveage cuent, the full-wave ectifie has half the total diode conduction losses compaed to the full-bidge ectifie. A full-wave ectifie has two seconday windings, hence the esistance is doubled fo the same winding aea, each winding in a full-wave caies an ms cuent that is.5 of the ms cuent of the full-bidge cicuit, theefoe the total seconday windings coppe losses of the full-wave ectifie is twice compaed to the fullbidge ectifie. In applications with high output voltages, the full bidge ectifie is advantageous since we can use diodes with half the voltage ating compaed to the full-wave ectifie. While in low output voltages and high cuents application, the full-wave is moe common, because of lowe total conduction losses and lowe component count and cost. Table Seconday Rectifie - Full-Wave compaed to Full-Bidge Diode voltage ating Numbe of diodes Diode conduction losses Numbe of seconday windings R sec pe winding I ms pe winding.5 *Compaison assumes same diode voltage dop and same tansfome coe Tansfome seconday coppe loss

13 Application Note AN -9 V. Septembe 5 Design Example 5. Application and Specifications Ou design example is applicable to the dc-dc stage of a sola mico invete, as shown in Figue 5., with specifications as listed in Table. Accoding to the discussion in section, the LLC convete will be implemented with a full-bidge on the pimay side and a full-bidge ectifie on the seconday side, same cicuit as shown in Figue.. ~V V DC-DC Convete DC Link DC-AC Invete Vac 6Hz Figue 5. Table Specifications Output voltage Input voltage Output powe V 8V 6V (V nominal) 5W Output powe deates linealy with input voltage Ex: Output powe= Vin=8V Resonant fequency khz 5. Design Steps We stat the design by calculating the tansfome tun atio and the minimum and maximum voltage gains of the esonant tank, as follows. = ܯ ௦ = _ ௨௧ ܯ ௦ =.85 ௫ = _ ܯ _ =.8 ௫ ܯ ܯ = _ ܯ _ ௫ =.97 ܯ ܯ Next, we follow the design steps discussed in section, as follows. Step : Selecting the Qmax Value Let s choose ௫ =. Step : Selecting the m Value Let s choose = 6. Step : Finding the Minimum Nomalized Switching Fequency We can solve the gain equation to find the minimum fequency, which occus at the peak of the Qmax cuve, as shown below, o we can look it up fom the gain plot as shown in Figue 5..

14 Application Note AN -9 V. Septembe )ܭ )ฬ ܨ,, ௫ ܨ =.89 ܨ =.ସ,.ଷ Step : Voltage Gain Veification ݖܪ 8.9 = ܨ = ௦_ Since the powe is deated at lowe input voltages as listed in the specifications, we have to calculate the maximum Q value at the minimum input voltage case ( ௫@ ), as follows. Note that this powe deating specification is elated to the sola panel I-V chaacteestics. (In case of othe applications whee powe ating is the same acoss the input voltage ange, we only have a single Qmax value). ௫@ = ௫ _ _ ௫ =. Then we can calculate the maximum gain eached at the minimum switching fequency fo the ௫@ condition, o we can look it up fom the gain plot as shown in Figue 5.. =.97 ) ܨ,, )ܭ ௫@ = ௫ ܭ =.8 ௫ ܯ >.97 = ௫ ܭ No need fo tuning the m value K (.m ) K (.m ) K (.m ).97 Q max@vmin =. Q max =...89 Figue 5. Step 5: Calculating Resonant Components Values The eflected load esistance at full load is, _ ߨ = 8 ଶ ൬ ଶ ଶ ௨௧ ൰ ௦, ௫ _ =.5 Ω Next we solve the equations below to obtain the esonant tank components values ௫ =. = ܮඥ ܥ/.5 Ω = ݖܪ = ܥ ܮඥߨ ܮ + ܮ = 6. = ܮ ܮ ܪߤ.5 = ܮ ܨߤ. = ܥ ܪߤ.9 =

15 Application Note AN -9 V. Septembe 5. Expeimental Wavefoms and Efficiency The design example was implemented with the specification shown in Table 5 Table 5 Pototype specifications Resonant fequency Minimum switching fequency ௦_ khz 5 khz Resonant capacito ܥ.9 µf Tansfome Specifications Tuns atio : ௦ : Leakage (Resonant) inducto ܮ. µh Magnetizing inducto ܮ. µh Figue 5. though Figue 5.6 shows expeimental wavefoms at diffeent input voltage conditions, Red channel: Pimay FET V gs Yellow channel: Pimay FET V ds Geen channel: Resonant cuent I L Blue channel: Rectifie output cuent I D+I D Vin= V Po=5W Vin= 8V Po=5W Figue 5. Figue 5. Vin= 6V Po=5W Vin= 6V Light Load Missing Cycle Mode Figue 5.5 Figue 5.6 5

16 Application Note AN -9 V. Septembe Table 6 Efficency data Output Powe (% of 5W) Input Voltage % % 6% 8% % 6V 97.% ** 97.%** 97.% 97.% 97.% V 96.% 97.% 97.6% 97.6% 97.% V 9.5% 96.8% 97.% 97.% 8V 9.% 96.% 96.% ** Missing cycle mode / Bust mode opeation Efficiency % 98.% 97.5% 97.% 96.5% 96.% 95.5% 95.% 9.5% 9.% 9.5% 97.% 97.6% 97.6% 97.% 96.9% 96.% Output Powe (W) Vin= V Vin= V Vin= 6V Vin= 8V Figue 5.7 Efficency cuves 6

17 7 Application Note AN -9 V. Septembe 6 Schematics and Bill of Mateial Figue 6. Schematics IC SFH686-T R R6.9k R k C8 C9 n INPUT PGND R.k C.nF/5VAC R8 SB CT FB C n V Q BSC8N6NS SC SW SD R C n Q5 BSC8N6NS Q BSC8N6NS Q6 BSC8N6NS CT C uf/v C uf/v C7 uf/v C8 uf/v C uf/v C uf/v C.7uF/5V CT CT CS+ CS- C uf/5v R k -Vin 6 7 -Vout +Vout 5 +Vin 8 U Isolated DC/DC R k R5 k R7 k R9 k C uf/5v V IC TL D IDH5G65C5 C6.u/5V C5.u/5V D5 IDH5G65C5 D IDH5G65C5 D6 IDH5G65C5 D V C6 u R8 k D V C7 u R Q9 MMBT9 R5 R7 V V_SEC CS- CS+ V V_SEC V_SEC T Tans CT INPUT+ CON INPUT- CON V CON GND CON OUT+ CON5 OUT- CON6 V INPUT C.u/5V T Tans C5.7uF/5V Q PBSSPT,5 R k SA SW R Q PBSSPT,5 R k R Q8 PBSSPT,5 R k R6 Q7 PBSSPT,5 R9 k R5 D N589HW-7-F D N589HW-7-F D8 N589HW-7-F D7 N589HW-7-F W Jumpe R k W Jumpe + C + C5 C.u/5V + C7 + C9 + C9 + C6 + C8 + C + C 5 U APAWG-7 V_SEC IC TL R k R8 k R6 5.6k V_SEC Q N7 R9 k V_SEC FB R7 k C IC SFH686-T R C6 R6 k R k R7 k R6 k R6 k V Load R6 R C7 R6 AC V- V+ AC D Bidge AC V- V+ AC D9 Bidge C n C5 n C u R5 k C.u 8 Ves VINS CL Vmc 7 9 Vef TD CS SRD 7 GND SHG SLG LG 5 SS FREQ 6 LOAD Delay 9 HG VCC Time EnA IC7 ICEHSG C n R9 M R9 5.6k/% R56 k R57 k C u R58 R 6k R7 9.k/% FB R k R55 k R k R5 k R5 R59 C7 n R8 R5 k R5 8k R C8 7nF C C n C6 n R5 R V V FB INPUT SA SB SW SC SC R6.7/W C9 7p R R8 VREF R5 SA SW SB V CS+ CS- CS- CS+ VDD LI 6 VSS 7 HS HI 5 HB HO LO 8 IC5 C5 n C n R6 R V SW SW VDD LI 6 VSS 7 HS HI 5 HB HO LO 8 IC6 SD SD V EN Load

18 Application Note AN -9 V. Septembe Table 7 Bill of Mateial Qty Designato Value Pat Numbe C.nF/5VAC VYM7Y5UQ6V 6 C, C, C7, C8, C, C uf/v C575X7SA6M 9 C, C9, C5, C6, C7, C8, C9, C, C C5, C6, C, C.u/5V B67D5K C, C5.7uF/5V B65A7J C6, C7, C u C6X7RH5K C8, C, C, C6, C7, R7, R, R, R, R, R5, R5, R58, R6, R6 5 C9 n GRM9R7HKAD C, C n GRM9R7HKAD 7 C, C, C, C, C5, C6, C7 n GRM9R7HKAD C, C uf/5v TMK6B76KL-TD C8 7nF GRMM5CH7JAL C9 7p CC6KRX7R9BB7 C.u C6Y5VH5Z/.85 C u TMK6B76KL-TD C5 n GRM95CHJAD D, D, D7, D8 BAS A BAS A-W E67 D, D, D5, D6 IDH5G65C5 IDH5G65C5 D9, D Bidge BAS7A-RPP D V SMAZ-TP D V SMAJ598B-TP IC, IC SFH686-T SFH686-T IC, IC TL TLCPK IC5, IC6 SO8 LM5AM/NOPB IC7 ICEHSG ICEHSG Q, Q, Q5, Q6 BSC8N6NS BSC8N6NS Q, Q, Q7, Q8 PBSSPT,5 PBSSPT,5 Q9 MMBT9 MMBT9FSCT-ND Q N7 N7 L67 R, R, R5, R6, R, R5, R, R8, R, R8, R59 ERJ-8GEYRV 9 R, R, R9, R, R, R7, R9, R, R6 k ERJ-8ENFV 5 R8, R, R, R8, R5 k ERJ-8GEYJV 8 R, R, R5, R7, R9, R7, R6, R6 k ERJ-8ENFV R6.9k ERJ-8GEYJ9V 5 R8, R, R, R5, R6 ERJ-8GEYJV R.k ERJ-8GEYJV R6 5.6k ERJ-8ENF56V R7 9.k/% ERJ-8ENF9V R9 5.6k/% ERJ-8ENF56V R 6k ERJ-8ENF6V R, R5 k ERJ-8ENFV R, R5, R56 k ERJ-8ENFV R6.7/W ERJ-TRQFR7U R9 M ERJ-8ENFV R5 8k ERJ-8ENF8V R55 k ERJ-8ENFV R57 k ERJ-8ENFV T Tansfome Custom** T Tans CT B88B5A5 U Isolated DC/DC VBT-S-S-SMT U APAWG-7 APAWG-7 **Tansfome built by Midcom-Wuth Electonics, E/7/-C9 8

19 Application Note AN -9 V. Septembe Figue 6. 7 Refeences [] Infineon Technologies: ICEHSG datasheet, High Pefomance Resonant Mode Contolle, V., August. [] Infineon Technologies: Design Guide fo LLC Convete with ICEHSG, V., July. [] Infineon Technologies: W LLC Evaluation Boad with LLC contolle ICEHSG, V., August. 9