HEF4013B. 1. General description. 2. Features and benefits. 3. Applications. 4. Ordering information. Dual D-type flip-flop
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1 Rev November 2011 Product data sheet 1. General description 2. Features and benefits 3. pplications The is a dual -type flip-flop that features independent set-direct input (S), clear-direct input (), clock input () and outputs (, ). ata is accepted when is LOW and is transferred to the output on the positive-going edge of the clock. The active HIGH asynchronous and S inputs are independent and override the or inputs. The outputs are buffered for best system performance. The clock input s Schmitt-trigger action makes the circuit highly tolerant of slower clock rise and fall times. It operates over a recommended V power supply range of 3 V to 15 V referenced to V SS (usually ground). Unused inputs must be connected to V, V SS, or another input. Tolerant of slow clock rise and fall times Fully static operation 5 V, 10 V, and 15 V parametric ratings Standardized symmetrical output characteristics Specified from 40 to +125 omplies with JEE standard JES 13-B ounters and dividers Registers Toggle flip-flops 4. Ordering information Table 1. Ordering information ll types operate from 40 to +125 Type number Package Name escription Version P IP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1 T SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 TT TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1
2 5. Functional diagram 1S S S S aag084 Fig 1. Functional diagram S 001aag086 Fig 2. Logic diagram (one flip-flop) ll information provided in this document is subject to legal disclaimers. NXP B.V ll rights reserved. Product data sheet Rev November of 16
3 6. Pinning information 6.1 Pinning V S V SS aag085 2S Fig 3. Pin configuration 6.2 Pin description Table 2. Pin description Symbol Pin escription 1, 2 1, 13 true output 1, 2 2, 12 complement output 1, 2 3, 11 clock input (LOW to HIGH edge-triggered) 1, 2 4, 10 asynchronous clear-direct input (active HIGH) 1, 2 5, 9 data input 1S, 2S 6, 8 asynchronous set-direct input (active HIGH) V SS 7 ground (0 V) V 14 supply voltage 7. Functional description Table 3. Function table [1] ontrol Input Output ns n n n n n H L X X H L L H X X L H H H X X H H L L L L H L L H H L [1] H = HIGH voltage level; L = LOW voltage level; X = don t care; = LOW-to-HIGH clock transition. ll information provided in this document is subject to legal disclaimers. NXP B.V ll rights reserved. Product data sheet Rev November of 16
4 8. Limiting values Table 4. Limiting values In accordance with the bsolute Maximum Rating System (IE 60134). Voltages are referenced to V SS = 0 V (ground). Symbol Parameter onditions Min Max Unit V supply voltage V I IK input clamping current V I < 0.5 V or V I >V V - 10 m V I input voltage 0.5 V V I OK output clamping current V O < 0.5 V or V O >V V - 10 m I I/O input/output current - 10 m I supply current - 50 m T stg storage temperature T amb ambient temperature P tot total power dissipation T amb = 40 to +125 IP14 [1] mw SO14 [2] mw TSSOP14 [3] mw P power dissipation per output mw [1] For IP14 packages: above T amb = 70, P tot derates linearly with 12 mw/k. [2] For SO14 packages: above T amb = 70, P tot derates linearly with 8 mw/k. [3] For TSSOP14 packages: above T amb = 60, P tot derates linearly with 5.5 mw/k. 9. Recommended operating conditions Table 5. Recommended operating conditions Symbol Parameter onditions Min Max Unit V supply voltage 3 15 V V I input voltage 0 V V T amb ambient temperature t/ V input transition rise and fall rate V = 5 V s/v V = 10 V s/v V = 15 V s/v ll information provided in this document is subject to legal disclaimers. NXP B.V ll rights reserved. Product data sheet Rev November of 16
5 10. Static characteristics Table 6. Static characteristics V SS = 0 V; V I =V SS or V ; unless otherwise specified. Symbol Parameter onditions V T amb = 40 T amb = +25 T amb = +85 T amb = +125 Unit Min Max Min Max Min Max Min Max V IH HIGH-level I O < 1 5 V V input voltage 10 V V 15 V V V IL LOW-level I O < 1 5 V V input voltage 10 V V 15 V V V OH HIGH-level I O < 1 5 V V output voltage 10 V V 15 V V V OL LOW-level I O < 1 5 V V output voltage 10 V V 15 V V I OH HIGH-level V O = 2.5V 5V m output current V O = 4.6 V 5 V m V O = 9.5 V 10 V m V O = 13.5 V 15 V m I OL LOW-level V O = 0.4 V 5 V m output current V O = 0.5 V 10 V m V O = 1.5 V 15 V m I I input leakage 15 V current I supply current all valid input 5 V combinations; 10 V I O =0 15 V I input capacitance pf ll information provided in this document is subject to legal disclaimers. NXP B.V ll rights reserved. Product data sheet Rev November of 16
6 11. ynamic characteristics Table 7. ynamic characteristics T amb = 25 ; unless otherwise specified. For test circuit see Figure 6. Symbol Parameter onditions V Extrapolation formula Min Typ Max Unit t PHL HIGH to LOW n to n, n; 5 V [1] L ns propagation delay see Figure 4 10 V L ns 15 V L ns ns to n 5 V [1] L ns 10 V L ns 15 V L ns n to n 5 V [1] L ns 10 V L ns 15 V L ns t PLH LOW to HIGH n to n, n; 5 V [1] L ns propagation delay see Figure 4 10 V L ns 15 V L ns ns to n 5 V [1] L ns 10 V L ns 15 V L ns n to n 5 V [1] L ns 10 V L ns 15 V L ns t t transition time see Figure 4 5 V [1] L ns 10 V L ns 15 V L ns t su set-up time n to n; 5 V ns see Figure 4 10 V ns 15 V ns t h hold time n to n; 5 V ns see Figure 4 10 V ns 15 V ns t W pulse width n input LOW; 5 V ns see Figure 4 10 V ns 15 V ns ns input HIGH; 5 V ns see Figure 5 10 V ns 15 V ns n input HIGH; 5 V ns see Figure 5 10 V ns 15 V ns ll information provided in this document is subject to legal disclaimers. NXP B.V ll rights reserved. Product data sheet Rev November of 16
7 Table 7. ynamic characteristics continued T amb = 25 ; unless otherwise specified. For test circuit see Figure 6. Symbol Parameter onditions V Extrapolation formula Min Typ Max Unit t rec recovery time ns input; see Figure 5 f clk(max) maximum clock frequency 5 V ns 10 V ns 15 V ns n input; 5 V ns see Figure 5 10 V ns 15 V ns see Figure 4 5 V MHz 10 V MHz 15 V MHz [1] Typical values of the propagation delays and output transition times can be calculated with the extrapolation formulas. L is given in pf. Table 8. ynamic power dissipation V SS = 0 V; t r = t f 20 ns; T amb = 25. Symbol Parameter V Typical formula Where P dynamic power dissipation 5 V P = 850 f i + (f o L ) V 2 W f i = input frequency in MHz; 10 V P = 3600 f i + (f o L ) V 2 W f o = output frequency in MHz; 15 V P = 9000 f i + (f o L ) V 2 W L = output load capacitance in pf; (f o L ) = sum of the outputs; V = supply voltage in V. 12. Waveforms 1/f clk(max) t W V I input n V M 0 V t su t su t f t r V I t h t h input n V M 0 V t PLH t PHL output n V OH t t V Y V M t t V OL V X 001aah016 Fig 4. Set-up and hold times are shown as positive values but may be specified as negative values. The shaded areas indicate when the input is permitted to change for predictable output performance. Measurement points are given in Table 9. Set-up time, hold time, minimum clock pulse width, propagation delays and transition times ll information provided in this document is subject to legal disclaimers. NXP B.V ll rights reserved. Product data sheet Rev November of 16
8 V I input n 0 V V I V M t rec t rec input ns 0 V V M t W V I input n 0 V V M t W V OH output n V OL 001aag088 Fig 5. Recovery times are shown as positive values but may be specified as negative values. Measurement points are given in Table 9. ns, n recovery time and pulse width Table 9. Measurement points Supply voltage Input Output V V M V M V X V Y 5 V to 15 V 0.5V 0.5V 0.1V 0.9V V G V I UT V O RT L 001aag182 Fig 6. Test and measurement data is given in Table 10; efinitions test circuit: UT = evice Under Test. R T = Termination resistance should be equal to output impedance Z o of the pulse generator. L = Load capacitance including jig and probe capacitance. Test circuit for measuring switching times Table 10. Test data Supply voltage Input Load V V I t r, t f L 5 V to 15 V V SS or V 20 ns 50 pf ll information provided in this document is subject to legal disclaimers. NXP B.V ll rights reserved. Product data sheet Rev November of 16
9 13. pplication information 1 2 n clock 001aag089 Fig 7. N-stage shift register 1 2 n clock T-type flip-flop 001aag090 Fig 8. Binary ripple up-counter; divide-by-2 n 1 2 n clock 001aag091 Fig 9. Modified ring counter; divide-by-(n + 1) ll information provided in this document is subject to legal disclaimers. NXP B.V ll rights reserved. Product data sheet Rev November of 16
10 14. Package outline IP14: plastic dual in-line package; 14 leads (300 mil) SOT27-1 M E seating plane 2 L 1 Z 14 e b b 1 8 w M c (e ) 1 M H pin 1 index E mm scale IMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches max. 1 2 (1) (1) min. max. b b 1 c E e e 1 L M E M H w (1) Z max Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. OUTLINE VERSION REFERENES IE JEE JEIT EUROPEN PROJETION ISSUE TE SOT G04 MO-001 S Fig 10. Package outline SOT27-1 (IP14) ll information provided in this document is subject to legal disclaimers. NXP B.V ll rights reserved. Product data sheet Rev November of 16
11 SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 E X c y H E v M Z 14 8 pin 1 index 2 1 ( ) 3 θ L p 1 7 L e b p w M detail X mm scale IMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches max b p c (1) E (1) e H (1) E L L p v w y Z Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included θ o 8 o OUTLINE VERSION REFERENES IE JEE JEIT EUROPEN PROJETION ISSUE TE SOT E06 MS Fig 11. Package outline SOT108-1 (SO14) ll information provided in this document is subject to legal disclaimers. NXP B.V ll rights reserved. Product data sheet Rev November of 16
12 TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 E X c y H E v M Z 14 8 pin 1 index 2 1 ( ) 3 θ 1 7 e b p w M detail X L p L mm scale IMENSIONS (mm are the original dimensions) UNIT b p c (1) E (2) e H (1) E L L p v w y Z max. mm θ o 8 o 0 Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENES IE JEE JEIT SOT402-1 MO-153 EUROPEN PROJETION ISSUE TE Fig 12. Package outline SOT402-1 (TSSOP14) ll information provided in this document is subject to legal disclaimers. NXP B.V ll rights reserved. Product data sheet Rev November of 16
13 15. Revision history Table 11. Revision history ocument I Release date ata sheet status hange notice Supersedes v Product data sheet - v.7 Modifications: Legal pages updated. hanges in General description, Features and benefits and pplications. v Product data sheet - v.6 v Product data sheet - v.5 v Product data sheet - v.4 v Product data sheet - _NV v.3 _NV v Product specification - _NV v.2 _NV v Product specification - - ll information provided in this document is subject to legal disclaimers. NXP B.V ll rights reserved. Product data sheet Rev November of 16
14 16. Legal information 16.1 ata sheet status ocument status [1][2] Product status [3] efinition Objective [short] data sheet evelopment This document contains data from the objective specification for product development. Preliminary [short] data sheet ualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section efinitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL efinitions raft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. 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Limiting values Stress above one or more limiting values (as defined in the bsolute Maximum Ratings System of IE 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the haracteristics sections of this document is not warranted. onstant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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16 18. ontents 1 General description Features and benefits pplications Ordering information Functional diagram Pinning information Pinning Pin description Functional description Limiting values Recommended operating conditions Static characteristics ynamic characteristics Waveforms pplication information Package outline Revision history Legal information ata sheet status efinitions isclaimers Trademarks ontact information ontents Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V ll rights reserved. For more information, please visit: For sales office addresses, please send an to: ate of release: 21 November 2011 ocument identifier:
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Rev. 6 22 May 2015 Product data sheet 1. General description The is a single-pole 16-throw analog switch (SP16T) suitable for use in analog or digital 16:1 multiplexer/demultiplexer applications. The switch
SiGe:C Low Noise High Linearity Amplifier
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BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description
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Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control
TO-92 Rev. 9 9 November 2 Product data sheet. Product profile. General description Passivated, sensitive gate triacs in a SOT54 plastic package.2 Features and benefits Designed to be interfaced directly
10 ma LED driver in SOT457
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The sensor can be operated at any frequency between DC and 1 MHz.
Rev. 6 18 November 2010 Product data sheet 1. Product profile 1.1 General description The is a sensitive magnetic field sensor, employing the magneto-resistive effect of thin film permalloy. The sensor
High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC
Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package
74HC123; 74HCT123. Dual retriggerable monostable multivibrator with reset
Rev. 9 19 January 2015 Product data sheet 1. General description The are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with
DISCRETE SEMICONDUCTORS DATA SHEET. dbook, halfpage M3D088. BB201 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Low-voltage variable capacitance double 2001 Oct 12 Low-voltage variable capacitance double FEATURES Excellent linearity C1: 95 pf; C7.5: 27.6
74HC4066; 74HCT4066. Quad single-pole single-throw analog switch
Rev. 8 3 December 2015 Product data sheet 1. General description The is a quad single pole, single throw analog switch. Each switch features two input/output terminals (ny and nz) and an active HIGH enable
IP4220CZ6. 1. Product profile. Dual USB 2.0 integrated ESD protection. 1.1 General description. 1.2 Features and benefits. 1.
SOT457 Rev. 5 8 July 2011 Product data sheet 1. Product profile 1.1 General description The is designed to protect I/O lines sensitive to capacitive load, such as USB 2.0, ethernet, Digital Video Interface
DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 996 Jul BF5A; BF5B; BF5C FEATURES Interchangeability of drain and source connections Frequencies
74ALVC164245. 16-bit dual supply translating transceiver; 3-state. This device can be used as two 8-bit transceivers or one 16-bit transceiver.
Rev. 8 15 March 2012 Product data sheet 1. General description The is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. The is a 16-bit
BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1.
Rev. 6 4 September 04 Product data sheet. Product profile. General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package Configuration
DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors
DISCRETE SEMICONDUCTORS DATA SHEET Product specification April 24 Product specification GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
DISCRETE SEMICONDUCTORS DATA SHEET M3D848. CGD923 870 MHz, 20 db gain power doubler amplifier. Product specification 2002 Oct 08
DISCRETE SEMICONDUCTORS DATA SHEET M3D848 2002 Oct 08 FEATURES High output capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Gold metallization ensures
74HC4051; 74HCT4051. 8-channel analog multiplexer/demultiplexer
Rev. 8 5 February 2016 Product data sheet 1. General description The is a single-pole octal-throw analog switch (SP8T) suitable for use in analog or digital 8:1 multiplexer/demultiplexer applications.
Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package
TO-220AC 27 May 2015 Product data sheet 1. General description Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package 2. Features and benefits Fast switching Low thermal resistance
45 V, 100 ma NPN general-purpose transistors
Rev. 9 2 September 214 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number
LIN-bus ESD protection diode
Rev. 3 31 May 2011 Product data sheet 1. Product profile 1.1 General description in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package designed to protect one automotive Local Interconnect
NTB0102. 1. General description. 2. Features and benefits. Dual supply translating transceiver; auto direction sensing; 3-state
Dual supply translating transceiver; auto direction sensing; 3-state Rev. 4 23 January 2013 Product data sheet 1. General description The is a 2-bit, dual supply translating transceiver with auto direction
INTEGRATED CIRCUITS. 74LVC08A Quad 2-input AND gate. Product specification IC24 Data Handbook. 1997 Jun 30
INTEGRATED CIRCUITS IC24 Data Handbook 1997 Jun 30 FEATURES Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1A Inputs accept voltages up to 5.5 V CMOS low power consumption
High-speed USB 2.0 switch with enable
Rev. 4 9 June 03 Product data sheet. General description The is a high-bandwidth switch designed for the switching of high-speed UB.0 signals in handset and consumer applications. These applications could
Femtofarad bidirectional ESD protection diode
Rev. 3 24 October 2011 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 Surface-Mounted
IP4294CZ10-TBR. ESD protection for ultra high-speed interfaces
XSON1 Rev. 4 1 November 213 Product data sheet 1. Product profile 1.1 General description The device is designed to protect high-speed interfaces such as SuperSpeed USB, High-Definition Multimedia Interface
General purpose low power phase control General purpose low power switching Solid-state relay. Symbol Parameter Conditions Min Typ Max Unit V DRM
TO-92 May 25 Product data sheet. General description Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package intended to be interfaced directly to microcontrollers, logic integrated
NPN wideband silicon germanium RF transistor
Rev. 1 29 April 211 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F
BC807; BC807W; BC327
Rev. 06 7 November 009 Product data sheet. Product profile. General description PNP general-purpose transistors. Table. Product overview Type number Package NPN complement NXP JEIT BC807 SOT - BC87 BC807W
40 V, 200 ma NPN switching transistor
Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic
NX3L4051. 1. General description. 2. Features and benefits. Single low-ohmic 8-channel analog switch
Rev. 5 3 July 2012 Product data sheet 1. General description The is a low-ohmic 8-channel analog switch, suitable for use as an analog or digital multiplexer/demultiplexer. The has three digital select
MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. http://www.philips.semiconductors.com use http://www.nxp.com
Rev. 3 21 November 27 Product data sheet Dear customer, IMPORTANT NOTICE As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets
Medium power Schottky barrier single diode
Rev. 03 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated
PUSB3FR4. 1. Product profile. ESD protection for ultra high-speed interfaces. 1.1 General description. 1.2 Features and benefits. 1.
XSON1 Rev. 1 26 January 215 Product data sheet 1. Product profile 1.1 General description The device is designed to protect high-speed interfaces such as SuperSpeed USB 3.1 at 1 Gbps, High-Definition Multimedia
BLL6G1214L-250. 1. Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1.
BLL6G1214L-25 Rev. 1 16 February 212 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
CAN bus ESD protection diode
Rev. 04 15 February 2008 Product data sheet 1. Product profile 1.1 General description in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller
NPN wideband silicon RF transistor
Rev. 1 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The is part of the
30 V, single N-channel Trench MOSFET
SOT883B Rev. 1 11 May 212 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN16B-3 (SOT883B) Surface-Mounted
ESD protection for high-speed interfaces
Rev. 1 1 October 212 Product data sheet 1. Product profile 1.1 General description The device is designed to protect high-speed interfaces such as High-Definition Multimedia Interface (HDMI), DisplayPort,
PMEG3005EB; PMEG3005EL
Rev. 0 29 November 2006 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress
INTEGRATED CIRCUITS. 74F74 Dual D-type flip-flop. Product specification Supercedes data of 1990 Oct 23 IC15 Data Handbook.
INTEGRATED CIRCUITS Supercedes data of 1990 Oct 23 IC15 Data Handbook 1996 Mar 12 FEATURE Industrial temperature range available ( 40 C to +85 C) DESCRIPTION The is a dual positive edge-triggered D-type
65 V, 100 ma PNP/PNP general-purpose transistor
Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
45 V, 100 ma NPN/PNP general-purpose transistor
Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03.
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Supersedes data of 2002 Oct 04 2004 Feb 03 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS
PMEG2020EH; PMEG2020EJ
Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
PMEG3015EH; PMEG3015EJ
Rev. 03 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1.
Rev. 02 20 August 2009 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package
BT138-600E. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data. 4Q Triac 30 August 2013 Product data sheet
TO-22AB 3 August 213 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-22AB) plastic package intended for use in general purpose bidirectional
BZT52H series. Single Zener diodes in a SOD123F package
Rev. 3 7 December 2010 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features
DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN
PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.
Rev. 04 30 December 2008 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for
PRTR5V0U2F; PRTR5V0U2K
Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection devices in leadless ultra small
2PD601ARL; 2PD601ASL
Rev. 01 6 November 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1.
AAV003-10E Current Sensor
Datasheet AAV003-10E Current Sensor Key Features For Low Current Detection On-Chip Current Strap for Precise Operation 80 ma to +80 ma Linear Range Sensitivity up to 2 mv/ma AC or DC Measurement Ultraminiature
DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21.
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D87 PBSS554Z 4 V low V CEsat PNP transistor Supersedes data of 21 Jan 26 21 Sep 21 FEATURES Low collector-emitter saturation voltage High current capability Improved
Description. Table 1. Device summary. Order code Temperature range Package Packaging Marking
14-stage ripple carry binary counter/divider and oscillator Applications Automotive Industrial Computer Consumer Description Datasheet - production data Features Medium speed operation Common reset Fully
Silicon temperature sensors. Other special selections are available on request.
Rev. 05 25 April 2008 Product data sheet 1. Product profile 1.1 General description The temperature sensors in the have a positive temperature coefficient of resistance and are suitable for use in measurement