Referências Bibliográficas
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1 Referências Bibliográficas [1] STEIL, T.; LUNING, J. Fantastic Filling Stations. St Paul, MN, USA: MBI, [2] WILSON, L. G. Benjamin Silliman and His Circle: Studies in the Influence of Benjamin Silliman on Science in America. New York, NY, USA: Science History Publications, [3] ENERGY INFORMATION ADMINISTRATION. International Energy Outlook Washington, DC, USA, p. Disponível em: < doe.gov/oiaf/ieo/pdf/0484(2009).pdf>. 1.1 [4] SMITH, W. Effect of light on selenium during the passage of an electric current. nature, v. 7, p , [5] PERLIN, J. Silicon Solar Cell Turns 50. NREL/BR , National Renewable Energy Lab., Golden, CO.(US), [6] FONTAINE, B. et al. Global market outlook for photovoltaics until Brussels, Belgium, p. Disponível em: < php?id=18> [7] HOVEL, H. Semiconductors and semimetals. New York, NY, USA: Academic Press, , 2.1.2, 3.3.1, [8] NELSON, J. The physics of solar cells. London, UK: Imperial College Press, , 2.1.1, 2.1.2, [9] GREEN, M. Third generation photovoltaics: advanced solar energy conversion. Berlin, Germany: Springer-Verlag, , 2.3 [10] EISBERG, R.; RESNICK, R. Quantum physics of Atoms, Molecules, Solids, Nuclei, and Particles. New York, NY, USA: John Wiley & Sons Inc, [11] RIMADA, J. C. Celdas solares de alta eficiencia en base a pozos cuánticos. Tese (Doctor en Ciencias Fýsicas) Instituto de Ciencia y Tecnologýa de los Materiales Laboratorio de Celdas Solares Universidad de La Habana, Ciudad de la Habana, Cuba, , 4.3
2 Referências Bibliográficas 78 [12] ATKINS, P.; PAULA, J. D. Atkins physical chemistry. Oxford, UK: Oxford University Press, [13] SMITH, J.; NESS, H. V.; ABBOTT, M. Introduction to chemical engineering thermodynamics. New York, NY, USA: McGraw-Hill Science/Engineering/Math, [14] LANDSBERG, P.; TONGE, G. Thermodynamic energy conversion efficiencies. Journal of Applied Physics, v. 51, p. R1, [15] SHOCKLEY, W.; QUEISSER, H. Detailed Balance Limit of Efficiency of p-n Junction Solar Cells. Journal of Applied Physics, v. 32, p. 510, [16] HENRY, C. Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells. Journal of applied physics, v. 51, p. 4494, [17] TRUPKE, T.; GREEN, M.; WÜRFEL, P. Improving solar cell efficiencies by up-conversion of sub-band-gap light. Journal of Applied Physics, v. 92, p. 4117, [18] KOLODINSKI, S. et al. Quantum efficiencies exceeding unity due to impact ionization in silicon solar cells. Applied Physics Letters, v. 63, p. 2405, [19] SCHALLER, R.; KLIMOV, V. High efficiency carrier multiplication in PbSe nanocrystals: Implications for solar energy conversion. Physical review letters, APS, v. 92, n. 18, p , [20] CONIBEER, G. et al. Silicon nanostructures for third generation photovoltaic solar cells. Thin Solid Films, Elsevier, v. 511, p , [21] LI, J. et al. 35% efficient nonconcentrating novel silicon solar cell. Applied Physics Letters, v. 60, p. 2240, [22] LUQUE, A.; MARTÍ, A. Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels. Physical Review Letters, APS, v. 78, n. 26, p , [23] LUQUE, A.; MARTÍ, A.; CUADRA, L. High efficiency solar cell with metallic intermediate band. In: Proc. 16th Eur. Photovoltaic Solar Energy Conf. Glasgow, UK: Earthscan Publications, p [24] BARNHAM, K.; DUGGAN, G. A new approach to high-efficiency multi-bandgap solar cells. Journal of Applied Physics, v. 67, p. 3490,
3 Referências Bibliográficas 79 [25] JOHNSON, D. C. et al. Observation of photon recycling in strain-balanced quantum well solar cells. Applied Physics Letters, AIP, v. 90, p , , 6.2 [26] ROHR, C. et al. InP-based lattice-matched InGaAsP and strain-compensated InGaAs/ InGaAs quantum well cells for thermophotovoltaic applications. Journal of Applied Physics, v. 100, p , , 6.2 [27] DERKACS, D. et al. Nanoparticle-induced light scattering for improved performance of quantum-well solar cells. Applied Physics Letters, v. 93, p , [28] RIMADA, J. et al. Conversion efficiency enhancement of AlGaAs quantum well solar cells. Microelectronics Journal, Elsevier, v. 38, n. 4-5, p , , 3.3, [29] RIMADA, J.; HERNANDEZ, L. Modelling of ideal AlGaAs quantum well solar cells. Microelectronics Journal, Elsevier, v. 32, n. 9, p , , 3.2 [30] ANDERSON, N. Ideal theory of quantum well solar cells. Journal of Applied Physics, v. 78, p. 1850, [31] NEAMEN, D. Semiconductor physics and devices: basic principles. New York, NY, USA: McGraw-Hill Science Engineering, , 3.1.1, [32] ZEGHBROECK, B. V. Principles of Semiconductor Devices. Unpublished, Disponível em: < title.htm>. 3.1, 3.1.1, 4.1.2, [33] COHEN-TANNOUDJI, C.; DIU, B.; LALOË, F. Quantum mechanics. vol New York, NY, USA: Wiley-Interscience, [34] BASTARD, G. Wave Mechanics Applied to Semiconductor Heterostructures. Les Ulis Cedex, France: Halsted Press, , [35] LADE, S.; ZAHEDI, A. A revised ideal model for AlGaAs/GaAs quantum well solar cells. Microelectronics Journal, Elsevier, v. 35, n. 5, p , , [36] STOER, J. et al. Introduction to numerical analysis. New York, NY, USA: Springer-Verlag, [37] LEVEQUE, R. Finite Difference Methods for Ordinary and Partial Differential Equations: Steady-State and Time-Dependent Problems (Classics in Applied
4 Referências Bibliográficas 80 Mathematics Classics in Applied Mathemat). Philadelphia, PA, USA: Society for Industrial and Applied Mathematics, [38] HARRISON, P.; HARRISON, P. Quantum wells, wires, and dots: theoretical and computational physics. New York, NY, USA: John Wiley & Sons, [39] KITTEL, C. Introduction to Solid State Physics, 7th edn. New York, NY, USA: John Wiley & Sons, [40] STREETMAN, B. Solid state electronic devices. Upper Saddle River, New Jersey, USA: Prentice Hall, [41] DALVEN, R. Introduction to applied solid state physics. New York, NY, USA: Plenum Press, [42] LI, E. Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures. Physica E: Lowdimensional Systems and Nanostructures, Elsevier, v. 5, n. 4, p , , [43] HAMAKER, H. Computer modeling study of the effects of inhomogeneous doping and/or composition in GaAs solar-cell devices. Journal of Applied Physics, v. 58, p. 2344, [44] NELSON, J. et al. Steady-state carrier escape from single quantum wells. IEEE Journal of Quantum Electronics, v. 29, n. 6, p , [45] ASPNES, D. et al. Optical properties of AlGa As. Journal of Applied Physics, v. 60, p. 754, , [46] PAXMAN, M. et al. Modeling the spectral response of the quantum well solar cell. Journal of Applied Physics, v. 74, p. 614, , [47] PHILIPP, H.; EHRENREICH, H. Optical properties of semiconductors. Physical Review, APS, v. 129, n. 4, p , [48] MICHALEWICZ, Z. Genetic algorithms + data structures = evolution programs. London, UK: Springer-Verlag,
5 A Descrição das amostras Abaixo são expostas a descrição das amostras utilizadas para validação dos modelos discutidos neste trabalho. Cap 1 GaAs 17 - Camada P 1 Al 0,33 Ga 0,67 As 150 1,3 10 ( 24) Camada intrínseca 1 Al 0,33 Ga 0,67 As Poços quânticos 50 GaAs Camada N 1 Al 0,33 Ga 0,67 As 460 1,3 10 ( 24) Tabela A.1: Amostra G946 Cap 1 GaAs 20 - Camada P 1 Al 0,25 Ga 0,75 As ( 23) Camada intrínseca 1 Al 0,35 Ga 0,65 As Poços quânticos 30 GaAs Camada N 1 Al 0,25 Ga 0,75 As ( 23) Tabela A.2: Amostra QT76 Cap 1 GaAs 40 - Camada P 1 Al 0,36 Ga 0,64 As ( 23) Camada intrínseca 1 Al 0,36 Ga 0,64 As Poços quânticos 30 GaAs Camada N 1 Al 0,36 Ga 0,64 As 600 2,5 10 ( 23) Tabela A.3: Amostra QT468A
6 Apêndice A. Descrição das amostras 82 Cap 1 GaAs 40 - Camada P 1 Al 0,36 Ga 0,64 As ( 23) Camada intrínseca 1 Al 0,36 Ga 0,64 As Poços quânticos Camada N 1 Al 0,36 Ga 0,64 As 600 2,5 10 ( 23) Tabela A.4: Amostra QT468B Cap 1 GaAs Cap 1 Al 0,8 Ga 0,2 As ( 24) Camada P 1 Al 0,31 Ga 0,69 As ( 24) Camada intrínseca 1 Al 0,31 Ga 0,69 As Poços quânticos 50 GaAs 10 - Camada N 1 Al 0,31 Ga 0,69 As ( 24) Tabela A.5: Amostra QT229 Cap 1 GaAs 20 - Camada P 1 Al 0,35 Ga 0,65 As ( 23) Camada intrínseca 1 Al 0,35 Ga 0,65 As Poços quânticos 1 GaAs 5 - Camada N 1 Al 0,35 Ga 0,65 As 600 2,5 10 ( 23) Tabela A.6: Amostra CB501
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