T.M.M. TEKNIKER MICROMACHINING Micro and Nanotechnology Dapartment FUNDACION TEKNIKER Avda. Otaola. 20 Tel. +34 943 206744 Fax. +34 943 202757 20600 Eibar http://www.tekniker.es
TMM FACILITIES -Clean Room (Class 100): -UV-Lithography (spin coater, mask aligner, wet-etching) etching) -- Nanolithography (Soft Lithography, Nanoimprint Lithography ) -- Thin films deposition (sputtering, e-e beam) -- Deep Reactive Ion Etching (Bosch process) -- Electroplating (Micromoulds( made by UVLIGA and DEEMO) -- Microreplication on polymers using Hot-Embossing
TMM FACILITIES -Micromachining: - Femtosecond Laser Ablation - 3 axis micromachining equipment -Diamond turning machine -Wire EDM -Sinking EDM -Characterisation: -SEM -AFM -Optical Profiler
UV Photolithography Microstructures above photoresist previously coated on different sizes as larges as 1500 millimetres 1. Photoresist coating Spin coating B.L.E. Delta 20 W8 dip-coating spray coating 2. UV Exposure Mask Aligner EVG EV620 Radiation NUV (350nm - 450nm) Linear resolution: : 0.6µm Lines of 20 micrometers in width with small holes of 3 micrometers in diameter 3. Developing -Spraying -Dipping
Wet-Etching Wet-etching etching on silicon, chromium or glass using isotropic wet- etching or anisotropic wet-etching etching Isotropic etching Anisotropic etching Chrome lines on glass. Lines width is 10 micrometers. Chromium thickness is 120 nanometers. Pozo de 100µm m de lado y 60µm m de profundidad realizado mediante ataque húmedo de silicio cristalino (100) en KOH
DEEP REACTIVE ION ETCHING Gaseous etchant Inductively Coupled Plasma High plasma density (>10 11 cm - 3 ) Low pressure (10-100mTorr) 100mTorr) General aspects Very high anisotropy High etching rates (>1µm/ m/min) Altos aspect-ratio (>50) Bosch process Time multiplexed etching is used. An etching cycle flowing only SF 6 and then swithching to a sidewall passivating etching cycle using only C 4 F 8. this gas forms a teflon like film. High selectivity photoresist-silicon silicon >75:1 Depth profiles to 1 millimetre up. Canales de 125µm m de altura y 12.5 µm m de anchura realizados mediante el proceso Bosch
Thin films Coatings of different metals and oxides using PVD techniques 1 - Sputtering Argon ions are attracted to the target and by momentum transference ions are released from the target to the substract DC or RF 2 - Electron beam evapotation Electron beam generates electrons, which are deflected in a magnetic field. The small spheres of material are evaporated and condensed on the substarct Lift-off photolithography. The metal deposition is made after making the exposure and developing Lines of 10 micrometers of TiAlN are coated on stainless steel coated with TiN
Electroplat plating Thick films growth (up to 2 millimetres thickness) using Ni or NiFe to manufacture end pieces in Ni or to make micromoulds for using in hot-embossing system. Characterisctics -Low intensity current to avoid stains in the coating -The anode is made of the material to be coated using a appropiate salt so as to avoid its erosion -Ph measurements to keep the growth rate high and avoid bubbles on the substract 100µm Electroplating made on silicon. Thickness 70 micrometers.
Micromoulds for micro/nano replication We use two different tecniques to make micromoulds. 1 - UV-LIGA (UV-Lithography with SU-8, Electroplating) SU8 Fotolitografía Electrodeposición Ni Si 2 - DEEMO (UV-Lithography Lithography, Deep Dry-Etching Etching, Electroplating) Ni moulds made using UV-LIGA Fotorresina convencional Si Fotolitografía Ataque Seco Electrodeposición Ni
Micro/Nanoreplication Replication on polymers using: 1 - Microinyection 2 - Hot-Embossing Master (FIB) Other technique of replication : Soft-Lithography PDMS original PDMS PDMS réplica PU PDMS replica Replication limit PDMS: 500 nm
Hot-embossing Steps: Molde Polímero T>T g T>T g T<T g T<T g Nanoimprint Lithography NIL: Utilización de la técnica de hot-embossing para la estructuración de un polímero sobre un substrato Molde Resina Substrato
Laser Ablation Femtosecond laser (titanium:saphire): Pulse energy: 1mJ: λ=800nm 0.4mJ: λ=400nm Pulse lenth: : 90fs Repetition: : 1KHz Material etch without heat affected zone (HAZ) Líneas de cromo de 1.5µm m de grosor Sobre sustrato de vidrio Canales realizados en Kapton
Dimensional Characterization Scanning Electron Microscope Confocal microscopy Resolution XY: 0.2µm Resolution Z: <10nm Difractive lens on polycarbonate Edge between silicon and photoresist