BC807; BC807W; BC327



Similar documents
BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

45 V, 100 ma NPN/PNP general-purpose transistor

65 V, 100 ma PNP/PNP general-purpose transistor

40 V, 200 ma NPN switching transistor

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858

2PD601ARL; 2PD601ASL

BC847/BC547 series. 45 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in small plastic packages.

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct Feb 03.

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan Sep 21.

45 V, 100 ma NPN general-purpose transistors

Medium power Schottky barrier single diode

PMEG3015EH; PMEG3015EJ

PMEG2020EH; PMEG2020EJ

PMEG3005EB; PMEG3005EL

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

DISCRETE SEMICONDUCTORS DATA SHEET

BAS70 series; 1PS7xSB70 series

DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

NPN wideband transistor in a SOT89 plastic package.

DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description

Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

Schottky barrier quadruple diode

DATA SHEET. PMEGXX10BEA; PMEGXX10BEV 1 A very low V F MEGA Schottky barrier rectifier DISCRETE SEMICONDUCTORS

10 ma LED driver in SOT457

DISCRETE SEMICONDUCTORS DATA SHEET

3-input EXCLUSIVE-OR gate. The 74LVC1G386 provides a 3-input EXCLUSIVE-OR function.

CAN bus ESD protection diode

SCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.

The sensor can be operated at any frequency between DC and 1 MHz.

PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1.

BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1.

Silicon temperature sensors. Other special selections are available on request.

DISCRETE SEMICONDUCTORS DATA SHEET. BZX384 series Voltage regulator diodes. Product data sheet Supersedes data of 2003 Apr 01.

Planar PIN diode in a SOD323 very small plastic SMD package.

DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BZX585 series Voltage regulator diodes. Product data sheet Supersedes data of 2004 Mar 26.

BZT52H series. Single Zener diodes in a SOD123F package

MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. use

Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control

NPN wideband silicon RF transistor

How To Make An Electric Static Discharge (Esd) Protection Diode

NPN wideband silicon germanium RF transistor

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode V F forward voltage I F =10mA

PRTR5V0U2F; PRTR5V0U2K

BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor

LIN-bus ESD protection diode

HEF4011B. 1. General description. 2. Features and benefits. 3. Ordering information. 4. Functional diagram. Quad 2-input NAND gate

SiGe:C Low Noise High Linearity Amplifier

IP4220CZ6. 1. Product profile. Dual USB 2.0 integrated ESD protection. 1.1 General description. 1.2 Features and benefits. 1.

2STBN15D100. Low voltage NPN power Darlington transistor. Features. Application. Description

BD135 - BD136 BD139 - BD140

1-of-4 decoder/demultiplexer

DISCRETE SEMICONDUCTORS DATA SHEET. dbook, halfpage M3D088. BB201 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12

Femtofarad bidirectional ESD protection diode

IP4234CZ6. 1. Product profile. Single USB 2.0 ESD protection to IEC level General description. 1.2 Features. 1.

BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors

The 74LVC1G11 provides a single 3-input AND gate.

Quad 2-input NAND Schmitt trigger

HEF4021B. 1. General description. 2. Features and benefits. 3. Ordering information. 8-bit static shift register

The 74LVC1G04 provides one inverting buffer.

Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package

60 V, 360 ma N-channel Trench MOSFET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source T amb = 25 C V

BC327, BC327-16, BC327-25, BC Amplifier Transistors. PNP Silicon. These are Pb Free Devices* Features MAXIMUM RATINGS

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV.

3-to-8 line decoder, demultiplexer with address latches

30 V, single N-channel Trench MOSFET

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS

ST High voltage fast-switching NPN power transistor. Features. Applications. Description

74HC2G02; 74HCT2G General description. 2. Features and benefits. 3. Ordering information. Dual 2-input NOR gate

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

Silicon NPN Phototransistor

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

General purpose low power phase control General purpose low power switching Solid-state relay. Symbol Parameter Conditions Min Typ Max Unit V DRM

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features.

Taping code. Reel size (mm) 2SCR513P MPT T ,000 NC

DISCRETE SEMICONDUCTORS DATA SHEET M3D848. CGD MHz, 20 db gain power doubler amplifier. Product specification 2002 Oct 08

Buffer with open-drain output. The 74LVC1G07 provides the non-inverting buffer.

HEF4013B. 1. General description. 2. Features and benefits. 3. Applications. 4. Ordering information. Dual D-type flip-flop

Low-power configurable multiple function gate

74HC377; 74HCT General description. 2. Features and benefits. 3. Ordering information

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

Triple single-pole double-throw analog switch

50 V, 180 ma P-channel Trench MOSFET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j = 25 C V

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020

Type Marking Pin Configuration Package BCX41 EKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO

74HC02; 74HCT General description. 2. Features and benefits. Ordering information. Quad 2-input NOR gate

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

Hex buffer with open-drain outputs

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS

Bus buffer/line driver; 3-state

BLL6G1214L Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1.

Features: Characteristic Symbol Rating Unit. Collector-Emitter Voltage V CEO 100 Collector-Base Voltage I C

4-bit binary full adder with fast carry CIN + (A1 + B1) + 2(A2 + B2) + 4(A3 + B3) + 8(A4 + B4) = = S1 + 2S2 + 4S3 + 8S4 + 16COUT

TIP31, TIP32 High Power Bipolar Transistor

Transcription:

Rev. 06 7 November 009 Product data sheet. Product profile. General description PNP general-purpose transistors. Table. Product overview Type number Package NPN complement NXP JEIT BC807 SOT - BC87 BC807W SOT SC-70 BC87W BC7 [] SOT54 (TO-9) SC-4 BC7 [] lso available in SOT54 and SOT54 variant packages (see Section ).. Features High current Low voltage. pplications General-purpose switching and amplification.4 Quick reference data Table. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V CEO collector-emitter voltage open base; - - 45 V I C =0m I C collector current (DC) - - 500 m I CM peak collector current - - h FE DC current gain I C = 00 m; V CE = V [] 00-600 BC807-6; BC807-6W; BC7-6 00-50 BC807-5; BC807-5W; BC7-5 60-400 BC807-40; BC807-40W; BC7-40 50-600 [] Pulse test: t p 00 μs; δ 0.0.

. Pinning information Table. Pinning Pin Description Simplified outline Symbol SOT base emitter collector sym0 SOT base emitter collector sot_so sym0 SOT54 emitter base collector SOT54 emitter base collector SOT54 variant emitter base collector 00aab47 00aab48 00aab447 006aaa49 006aaa49 006aaa49 BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 of 9

. Ordering information Table 4. Ordering information Type number [] Package Name Description Version BC807 - plastic surface mounted package; leads SOT BC807W SC-70 plastic surface mounted package; leads SOT BC7 [] SC-4 plastic single-ended leaded (through hole) package; leads SOT54 [] Valid for all available selection groups. [] lso available in SOT54 and SOT54 variant packages (see Section and Section 9). 4. Marking Table 5. Marking codes Type number Marking code [] BC807 5D* BC807-6 5* BC807-5 5B* BC807-40 5C* BC807W 5D* BC807-6W 5* BC807-5W 5B* BC807-40W 5C* BC7 C7 BC7-6 C76 BC7-5 C75 BC7-40 C740 [] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 of 9

5. Limiting values 6. Thermal characteristics Table 6. Limiting values In accordance with the bsolute Maximum Rating System (IEC 604). Symbol Parameter Conditions Min Max Unit V CBO collector-base voltage open emitter - 50 V V CEO collector-emitter voltage open base; - 45 V I C =0m V EBO emitter-base voltage open collector - 5 V I C collector current (DC) - 500 m I CM peak collector current - I BM peak base current - 00 m P tot total power dissipation BC807 T amb 5 C [][] - 50 mw BC807W T amb 5 C [][] - 00 mw BC7 T amb 5 C [][] - 65 mw T stg storage temperature 65 +50 C T j junction temperature - 50 C T amb ambient temperature 65 +50 C [] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [] Valid for all available selection groups. Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-a) thermal resistance from junction to ambient BC807 T amb 5 C [][] - - 500 K/W BC807W T amb 5 C [][] - - 65 K/W BC7 T amb 5 C [][] - - 00 K/W [] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [] Valid for all available selection groups. BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 4 of 9

7. Characteristics Table 8. Characteristics T amb = 5 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit I CBO collector-base cut-off current I E = 0 ; V CB = 0 V - - 00 n I E = 0 ; V CB = 0 V; - - 5 μ T j =50 C I EBO emitter-base cut-off current I C = 0 ; V EB = 5 V - - 00 n h FE DC current gain I C = 00 m; V CE = V [] 00-600 BC807-6; BC807-6W; 00-50 BC7-6 BC807-5; BC807-5W; 60-400 BC7-5 BC807-40; BC807-40W; 50-600 BC7-40 h FE DC current gain I C = 500 m; V CE = V [] 40 - - V CEsat collector-emitter saturation I C = 500 m; I B = 50 m [] - - 700 mv voltage V BE base-emitter voltage I C = 500 m; V CE = V [] - -. V C c collector capacitance I E = i e = 0 ; V CB = 0 V; - 5 - pf f=mhz f T transition frequency I C = 0 m; V CE = 5 V; f=00mhz 80 - - MHz [] Pulse test: t p 00 μs; δ 0.0. [] V BE decreases by approximately mv/k with increasing temperature. BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 5 of 9

00 006aaa9 600 006aaa0 h FE h FE 00 400 () () 00 () 00 () Fig. 0 0 0 0 0 I C (m) V CE = V T amb = 50 C () T amb = 5 C () T amb = 55 C Selection -6: DC current gain as a function of collector current; typical values Fig. 0 0 0 0 0 I C (m) V CE = V T amb = 50 C () T amb = 5 C () T amb = 55 C Selection -5: DC current gain as a function of collector current; typical values 800 006aaa h FE 600 400 () 00 () 0 0 0 0 0 I C (m) V CE = V T amb = 50 C () T amb = 5 C () T amb = 55 C Fig. Selection -40: DC current gain as a function of collector current; typical values BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 6 of 9

0 006aaa 0 006aaa V BEsat (V) V BEsat (V) () () () () Fig 4. 0 0 0 0 0 I C (m) I C /I B = 0 T amb = 55 C () T amb = 5 C () T amb = 50 C Selection -6: Base-emitter saturation voltage as a function of collector current; typical values Fig 5. 0 0 0 0 0 I C (m) I C /I B = 0 T amb = 55 C () T amb = 5 C () T amb = 50 C Selection -5: Base-emitter saturation voltage as a function of collector current; typical values 0 006aaa4 V BEsat (V) () () 0 0 0 0 0 I C (m) I C /I B = 0 T amb = 55 C () T amb = 5 C () T amb = 50 C Fig 6. Selection -40: Base-emitter saturation voltage as a function of collector current; typical values BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 7 of 9

006aaa5 006aaa6 V CEsat (V) V CEsat (V) 0 0 0 () () Fig 7. 0 0 0 0 0 I C (m) I C /I B = 0 T amb = 50 C () T amb = 5 C () T amb = 55 C () Selection -6: Collector-emitter saturation voltage as a function of collector current; typical values () Fig 8. 0 0 0 0 0 I C (m) I C /I B = 0 T amb = 50 C () T amb = 5 C () T amb = 55 C Selection- 5: Collector-emitter saturation voltage as a function of collector current; typical values 006aaa7 V CEsat (V) 0 0 () () 0 0 0 0 0 I C (m) I C /I B = 0 T amb = 50 C () T amb = 5 C () T amb = 55 C Fig 9. Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 8 of 9

. 006aaa8. () 006aaa9 () I C () 0.8 () () (4) (5) (6) I C () 0.8 (4) (5) (6) (7) (7) (8) 0.4 (8) (9) 0.4 (9) (0) (0) T amb = 5 C I B = 6.0 m () I B = 4.4 m () I B =.8 m (4) I B =. m (5) I B = 9.6 m (6) I B = 8.0 m (7) I B = 6.4 m (8) I B = 4.8 m (9) I B =. m (0) I B =.6 m Fig 0. 0 0 4 5 V CE (V) Selection -6: Collector current as a function of collector-emitter voltage; typical values T amb = 5 C I B =.0 m () I B =.7 m () I B = 0.4 m (4) I B = 9. m (5) I B = 7.8 m (6) I B = 6.5 m (7) I B = 5. m (8) I B =.9 m (9) I B =.6 m (0) I B =. m Fig. 0 0 4 5 V CE (V) Selection -5: Collector current as a function of collector-emitter voltage; typical values BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 9 of 9

. 006aaa0 I C () (5) (4) () () 0.8 (6) (7) (8) (9) 0.4 (0) 0 0 4 5 V CE (V) T amb = 5 C I B =.0 m () I B = 0.8 m () I B = 9.6 m (4) I B = 8.4 m (5) I B = 7. m (6) I B = 6.0 m (7) I B = 4.8 m (8) I B =.6 m (9) I B =.4 m (0) I B =. m Fig. Selection -40: Collector current as a function of collector-emitter voltage; typical values BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 0 of 9

8. Package outline Plastic surface-mounted package; leads SOT D B E X H E v M Q c e b p w M B L p e detail X 0 mm scale DIMENSIONS (mm are the original dimensions) UNIT max.. mm 0. 0.9 b p c D E e e H E L p Q v w 0.48 0.8 0.5 0.09.0.8.4..9 0.95.5. 0.45 0.5 0.55 0.45 0. 0. OUTLINE VERSION SOT REFERENCES IEC JEDEC JEIT TO-6B EUROPEN PROJECTION ISSUE DTE 04--04 06-0-6 Fig. Package outline SOT (TO-6B) BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 of 9

Plastic surface-mounted package; leads SOT D B E X y H E v M Q c e b p w M B L p e detail X 0 mm scale DIMENSIONS (mm are the original dimensions) UNIT max. mm 0. 0.8 b p c D E e e H E Lp Q v w 0.4 0. 0.5 0.0..8.5.5. 0.65..0 0.45 0.5 0. 0. 0. 0. OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT SC-70 04--04 06-0-6 Fig 4. Package outline SOT (SC-70) BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 of 9

Plastic single-ended leaded (through hole) package; leads SOT54 c E d L b D e e b L 0.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT b b c D d E e e L L max. mm 5. 5.0 0.48 0.40 0.66 0.55 0.45 0.8 4.8 4.4.7.4 4..6.54.7 4.5.7.5 Note. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC JEIT SOT54 TO-9 SC-4 EUROPEN PROJECTION ISSUE DTE 04-06-8 04--6 Fig 5. Package outline SOT54 (SC-4/TO-9) BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 of 9

Plastic single-ended leaded (through hole) package; leads (wide pitch) SOT54 c E L d L b e D e b L 0.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm 5. 5.0 b 0.48 0.40 b 0.66 0.55 c 0.45 0.8 D 4.8 4.4 d.7.4 E 4..6 e 5.08 e L L L max..54 4.5.7 Note. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE 97-05- 04-06-8 Fig 6. Package outline SOT54 BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 4 of 9

Plastic single-ended leaded (through hole) package; leads (on-circle) SOT54 variant c e L E d L b D e e b L 0.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm 5. 5.0 b 0.48 0.40 b 0.66 0.55 c 0.45 0.8 D 4.8 4.4 d.7.4 E 4..6 e.54 e.7 L 4.5.7 L max L max.5.5 Note. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC JEIT EUROPEN PROJECTION ISSUE DTE SOT54 variant 04-06-8 05-0-0 Fig 7. Package outline SOT54 variant BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 5 of 9

9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the NC ordering code. [] Type number Package Description Packing quantity 000 5000 0000 BC807 SOT 4 mm pitch, 8 mm tape and reel -5 - -5 BC807W SOT 4 mm pitch, 8 mm tape and reel -5 - -5 BC7 SOT54 bulk, straight leads - -4 - BC7 SOT54 tape and reel, wide pitch - - -6 BC7 SOT54 tape ammopack, wide pitch - - -6 BC7 SOT 54 variant bulk, delta pinning (on-circle) - - - [] For further information and the availability of packing methods, see Section. BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 6 of 9

0. Revision history Table 0. Revision history Document ID Release date Data sheet status Change notice Supersedes BC807_BC807W_ BC7_6 Modifications: BC807_BC807W_ BC7_5 0097 Product data sheet - BC807_BC807W_ BC7_5 This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Table Pinning : updated Figure Package outline SOT (TO-6B) : updated Figure 4 Package outline SOT (SC-70) : updated 0050 Product data sheet CPCN000007F CPCN00405006F BC807_4; BC807W_; BC7_ BC807_4 00406 Product specification - BC807_ BC807W_ 999058 Product specification - BC807W_808W_CNV_ BC7_ 999045 Product specification - BC7_ BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 7 of 9

. Legal information. Data sheet status Document status [][] Product status [] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [] The term short data sheet is explained in section Definitions. [] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.. Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet short data sheet is an extract from a full data sheet with the same product type number(s) and title. short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.. Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. pplications pplications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the bsolute Maximum Ratings System of IEC 604) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding..4 Trademarks Notice: ll referenced brands, product names, service names and trademarks are the property of their respective owners.. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BC807_BC807W_BC7_6 Product data sheet Rev. 06 7 November 009 8 of 9

. Contents Product profile........................... General description...................... Features............................... pplications............................4 Quick reference data.................... Pinning information...................... Ordering information..................... 4 Marking................................ 5 Limiting values.......................... 4 6 Thermal characteristics.................. 4 7 Characteristics.......................... 5 8 Package outline........................ 9 Packing information.................... 6 0 Revision history........................ 7 Legal information....................... 8. Data sheet status...................... 8. Definitions............................ 8. Disclaimers........................... 8.4 Trademarks........................... 8 Contact information..................... 8 Contents.............................. 9 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 November 009 Document identifier: BC807_BC807W_BC7_6