Typical Infrared Absorption Frequencies. Functional Class Range (nm) Intensity Assignment Range (nm) Intensity Assignment



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Typical Infrared Absorption Frequencies Functional Class Range (nm) Intensity Assignment Range (nm) Intensity Assignment Alkanes 2850-3000 CH 3, CH 2 & CH 2 or 3 bands Alkenes 3020-3100 1630-1680 1900-2000 Alkynes 3300 2100-2250 Arenes 3030 1600 & 1500 Alcohols & Phenols 3580-3650 3200-3550 970-1250 Amines Aldehydes & Ketones 3400-3500 (dil. soln.) 3300-3400 (dil. soln.) 1000-1250 2690-2840 (2 bands) 1720-1740 1710-1720 1690 1675 1745 1780 Carboxylic Acids & Derivatives 2500-3300 (acids) overlap C-H 1705-1720 (acids) 1210-1320 (acids) -wk wk wk - & =CH 2 (usually sharp) (symmetry reduces intensity) asymmetric etch C-H (usually sharp) C C (symmetry reduces intensity) C-H (may be several bands) (in ring) (2 bands) (3 if conjugated) O-H (free), usually sharp O-H (H-bonded), usually broad C-O N-H (1 -amines), 2 bands N-H (2 -amines) C-N C-H (aldehyde C-H) C=O (saturated aldehyde) C=O (saturated ketone) aryl ketone α,β-unsaturation cyclopentanone cyclobutanone O-H (very broad) C=O (H-bonded) O-C (sometimes 2-peaks) 1350-1470 1370-1390 720-725 880-995 780-850 675-730 wk CH 2 & CH 3 deformation CH 3 deformation CH 2 rocking & =CH 2 (out-of-plane bending) cis-rch=chr 600-700 C-H deformation 690-900 - C-H bending & ring puckering 1330-1430 650-770 1550-1650 660-900 1350-1360 1400-1450 1100 -wk - O-H bending (in-plane) O-H bend NH 2 scissoring (1 -amines) NH 2 & N-H wagging (shifts on H-bonding) α-ch 3 bending α-ch 2 bending C-C-C bending 1395-1440 C-O-H bending 1785-1815 ( acyl halides) 1750 & 1820 (anhydrides) C=O C=O (2-bands)

1040-1100 1735-1750 (esters) 1000-1300 1630-1695 (amides) O-C C=O O-C (2-bands) C=O (amide I band) 1590-1650 1500-1560 N-H (1 -amide) II band N-H (2 -amide) II band Nitriles 2240-2260 C N (sharp) Isocyanates,Isothiocyanates, Diimides, Azides & Ketenes 2100-2270 -N=C=O, -N=C=S -N=C=N-, -N 3, =O Other Functional Groups Infrared absorption data for some functional groups not listed in the preceding table are given below. Most of the absorptions cited are associated with etching vibrations. Standard abbreviations ( = ong, wk = weak, brd = broad & shp = sharp) are used to describe the absorption bands. S-H thiols S-OR esters S-S disulfide Functional Class C=S thiocarbonyl S=O sulfoxide sulfone sulfonic acid sulfonyl chloride sulfate P-H phosphine (O=)PO-H phosphonic acid P-OR esters P=O phosphine oxide phosphonate Sulfur Functions Characteristic Absorptions 2550-2600 cm -1 (wk & shp) 700-900 () 500-540 (wk) 1050-1200 () 1030-1060 () 1325± 25 (as) & 1140± 20 (s) (both ) 1345 () 1365± 5 (as) & 1180± 10 (s) (both ) 1350-1450 () Phosphorous Functions 2280-2440 cm -1 ( & shp) 950-1250 (wk) P-H bending 2550-2700 () 900-1050 () 1100-1200 () 1230-1260 ()

Si-H silane Si-OR Si-CH 3 phosphate phosphoramide =NOH oxime O-H (etch) C=N N-O N-O amine oxide aliphatic aromatic N=O nitroso nitro 1100-1200 () 1200-1275 () Silicon Functions 2100-2360 cm -1 () 1000-11000 ( & brd) 1250± 10 ( & shp) Oxidized Nitrogen Functions 3550-3600 cm -1 () 1665± 15 945± 15 960± 20 1250± 50 1550± 50 () 1530± 20 (as) & 1350± 30 (s) Alkene Absorption Frequencies Alkene Substitution Range (nm) Intensity Assignment Range (nm) Intensity Assignment Mono-Alkyl (vinyl group) R-CH=CH 2 Di-Alkyl (cis) RCH=CHR Di-Alkyl (trans) RCH=CHR Di-Alkyl (geminal) R 2 H 2 Tri-Alkyl R 2 HR 3010-3040 & 3075-3095 1645 3010-3040 1658 3010-3040 1675 3075-3095 1653 3010-3040 1670 (2-bands) (symmetry reduces intensity) (symmetry reduces intensity) 905-920 & 985-1000 1280-1320 & 1410-1420 & & bending 680-730 bending 960-970 & 1295-1310 & bending 885-895 & 1410-1420 both bending 790-840 bending

Arene Absorption Frequencies Arene Substitution Range (nm) Intensity Assignment Range (nm) Intensity Assignment Mono-Alkyl (R-C 6 H 5 ) 3000-3070 Di-Alkyl (R 2 C 6 H 4 ) ortho meta para Tri-Alkyl (R 3 C 6 H 3 ) 1,2,3-1,2,4-1,3,5- Tetra-Alkyl (R 4 C 6 H 2 ) 1,2,3,4-1,2,3,5-1,2,4,5-3000-3070 3000-3070 3000-3070 Penta-Alkyl (R 5 C 6 H) 3010-3040 1670 - (ring, usually 2-bands) (ring, usually 2-bands) (ring, usually 2-bands) 730-770 & 680-720 950-1225 (2 or 3 bands) 735-770 685-720 & 750-810 & 810-900 800-860 685-720 & 750-810 800-860 & 820-900 685-720 & 820-900 800-840 840-880 840-880 & wk & sharp & & & & & bending (in-plane & ring torsion) C-H bending & ring torsion (esp. meta) bending & ring torsion (esp. sym. subst.) bending 840-880 bending Amines Amine Class Primary (1 ) The N-H etching absorption is less sensitive to hydrogen bonding than are O-H absorptions. In the gas phase and in dilute CCl 4 solution free N-H absorption is observed in the 3400 to 3500 cm -1 region. Primary aliphatic amines display two well-defined peaks due to asymmetric (higher frequency) and symmetric N-H Strong in-plane NH 2 scissoring absorptions at 1550 to 1650 cm -1, and out-of-plane wagging at 650 to 900 cm -1 (usually broad) are characteristic of 1 -amines.

Secondary (2 ) Tertiary (3 ) etching, separated by 80 to 100 cm -1. In aromatic amines these absorptions are usually 40 to 70 cm -1 higher in frequency. A smaller absorption near 3200 cm -1 (shaded orange in the spectra) is considered to be the result of interaction between an overtone of the 1600 cm -1 band with the symmetric N-H etching band. C-N etching absorptions are found at 1200 to 1350 cm -1 for aromatic amines, and at 1000 to 1250 cm -1 for aliphatic amines. Secondary amines exhibit only one absorption near 3420 cm -1. Hydrogen bonding in concentrated liquids shifts these absorptions to lower frequencies by about 100 cm -1. Again, this absorption appears at slightly higher frequency when the nitrogen atom is bonded to an aromatic ring. The C-N absorptions are found in the same range, 1200 to 1350 cm -1 (aromatic) and 1000 to 1250 cm -1 (aliphatic) as for 1 -amines. No N-H absorptions. The C-N absorptions are found in the same range, 1200 to 1350 cm -1 (aromatic) and 1000 to 1250 cm -1 (aliphatic) as for 1 -amines. A weak N-H bending absorption is sometimes visible at 1500 to 1600 cm -1. A broad wagging absorption at 650 to 900 cm -1 may be discerned in liquid film samples. Aside from the C-N etch noted on the left, these compounds have spectra characteristic of their alkyl and aryl substituents. Carboxylic Acid Derivatives Carbonyl Derivative Acyl Halides (RCOX) X = F X = Cl X = Br Acid Anhydride, (RCO) 2 O acyclic 6-membered ring 5-membered ring Esters & Lactones (RCOOR') Carbonyl Absorption C=O etch 1860 ± 20 cm -1 1800 ± 15 1800 ± 15 C=O etch (2 bands) 1750 & 1820 cm -1 1750 &1820 1785 & 1865 Comments Conjugation lowers the C=O frequencies reported here, as with aldehydes & ketones. In acyl chlorides a lower intensity shoulder or peak near 1740 cm -1 is due to an overtone interaction. Conjugation lowers the C=O frequencies reported here, as with aldehydes & ketones. The two etching bands are separated by 60 ± 30 cm -1, and for acyclic anhydrides the higher frequency (asymmetric etching) band is onger than the lower frequency (symmetric) absorption. Cyclic anhydrides also display two carbonyl etching absorptions, but the lower frequency band is the ongest. One or two -CO-O-CO- etching bands are observed in the 1000 to 1300 cm -1 region. C=O etch Conjugation lowers the C=O frequencies reported here, as with aldehydes & ketones 1740 cm ± 10 cm - Strong CO-O etching absorptions (one ot two) are found from 1150 to 1250 cm -1

esters 6-membered lactone 5-membered lactone 4-membered lactone Amides & Lactams (RCONR 2 ) 1 & 2 -amides 3 -amides 6-membered lactams 5-membered lactams 4-membered lactams 1 1740 cm ± 10 1765 cm± 5 1840 cm ± 5 C=O bands 1510 to 1700 cm -1 (2 bands) 1650± 15 (one band) 1670 ± 10 (one band) 1700 ± 15 1745 ± 15 The effect of conjugation is much less than for aldehydes & ketones. The higher frequency absorption (1665± 30) is called the Amide I band. The lower frequency Amide II band (1620± 30 in 1 amides & 1530± 30 in 2 amides) is largely due to N-H bending trans to the carbonyl oxygen. In concentrated samples this absorption is often obscured by the onger amide I absorption. Hydrogen bonded association shifts some of these absorptions, as well as the prominent N-H etching absorptions. N-H etch: 3170 to 3500 cm -1. Two bands for 1 -amides, one for 2 -amides.