Direct Attach DA7 LEDs CxxxDA7-Sxx Data Sheet Cree s Direct Attach DA7 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting and general-illumination markets. The DA7 LEDs are among the brightest in the lighting market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The bondpad-down design allows for eutectic die attach, eliminating the need for wire bonds, and enables superior performance from improved thermal management. FEATURES Direct Attach LED Technology Rectangular LED RF Performance 45 & 46 nm 43 mw min High Reliability - Eutectic Attach Low Forward Voltage (Vf) 3.3 V Typical at 35 ma Maximum DC Forward Current 75 ma InGaN Junction-Down Design for Improved Thermal Management No Wire Bonds Required APPLICATIONS General Illumination Aircraft Decorative Lighting Task Lighting Outdoor Illumination White LEDs Camera Flash Projection Displays Automotive Large LCD Backlighting Television CxxxDA7-Sxx Chip Diagram Top View Die Cross Section Bottom View DA7 LED 7 x 7 μm Anode (+) 645 x 75 μm Data Sheet: CPR3EU Rev. - Gap 75 μm Cathode (-) 645 x 495 μm t = 335 μm Subject to change without notice.
Notes, & 3 Maximum Ratings at T A = 5 C CxxxDA7-Sxx DC Forward Current 75 ma Peak Forward Current (/ duty cycle @ khz) ma LED Junction Temperature 5 C Reverse Voltage 5 V Operating Temperature Range -4 C to + C Storage Temperature Range -4 C to + C Typical Electrical/Optical Characteristics at T A = 5 C, If = 35 ma Note Part Number Forward Voltage (V f, V) Reverse Current [I(Vr=5V), μa] Full Width Half Max (λ D, nm) Min. Typ. Max. Max. Typ. C45DA7-Sxx.9 3.3 3.5 C46DA7-Sxx.9 3.3 3.5 Mechanical Specifications CxxxDA7-Sxx Description Dimension Tolerance P-N Junction Area (μm) 645 x 645 ±35 Chip Bottom Area (μm) 7 x 7 ±35 Chip Top Area (μm) 34 x 34 ±35 Chip Thickness (μm) 335 ±5 AuSn Bond Pad Width Anode (um) 75 ±5 AuSn Bond Pad Length Anode (um) 645 ±35 AuSn Bond Pad Width Cathode (um) 495 ±35 AuSn Bond Pad Length Cathode (um) 645 ±35 Bond Pad Gap (μm) 75 ±5 AuSn Bond Pad Thickness (μm) 3 ±.5 Notes:. Maximum ratings are package-dependent. The above ratings were determined using a Cree 3.45-mm x 3.45-mm SMT package (with silicone encapsulation and intrinsic AuSn metal die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 35 C (< 5 seconds).. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 35 ma within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-¾ packages (with Hysol OS4 epoxy encapsulant and intrinsic AuSn metal die attach). Optical characteristics measured in an integrating sphere using Illuminance E. 3. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. 8 7 Maximum Forward Current (ma) 6 5 4 3 Rth j-a = C/W Rth j-a = 5 C/W Rth j-a = C/W Rth j-a = 5 C/W 5 5 75 5 5 75 Ambient Temperature ( C) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA7 are trademarks of CPR3EU Rev. - 46 Silicon Drive Durham, NC 773 USA Tel: +.99.33.53
Standard Bins for CxxxDA7-Sxx LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxDA7-Sxxxxx) orders may be filled with any or all bins (CxxxDA7-xxxxx) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 35 ma. C45DA7-S43 Radiant Flux (mw) 55 485 43 C45DA77 C45DA78 C45DA79 C45DA7 C45DA73 C45DA74 C45DA75 C45DA76 C45DA79 C45DA7 C45DA7 C45DA7 C45DA75 C45DA76 C45DA77 C45DA78 445 447.5 45 45.5 Dominant Wavelength (nm) C46DA7-S43 Radiant Flux (mw) 55 485 43 C46DA77 C46DA78 C46DA79 C46DA7 C46DA73 C46DA74 C46DA75 C46DA76 C46DA79 C46DA7 C46DA7 C46DA7 C46DA75 C46DA76 C46DA77 C46DA78 457.5 46 46.5 465 Dominant Wavelength (nm) Note: The radiant-flux values above are representative of the die in a T-¾ encapsulated 5-mm lamp. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA7 are trademarks of 3 CPR3EU Rev. - 46 Silicon Drive Durham, NC 773 USA Tel: +.99.33.53
DW Shift (n - Characteristic Curves These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant Relative Light Intensity Vs Junction Temperature flux and dominant wavelength bins. 3 4 5 6 7 Forward Current vs. Forward Voltage 7 6 5 4 3 Relative Intensity DW Shift (nm) % Wavelength Shift vs. Forward Current 95% 9% 85% 8% - 7% 5 5 75 5 5 3 4 5 Vf (V) 3 4 5 6 7 Relative Intensity vs. Forward Current Dominant Wavelength Shift Vs Junction Temperature % 5% 6 5 7 Forward Current vs. Forward Voltage Relative Intensity 5% % 5% If DW (ma) Shift (nm) 6 4 5 3 4 3 5% % % 95% 3 4 5 6 7 Relative Light Intensity Vs Junction Temperature Wavelength Shift vs. Forward Current 5 5 75 5 5 Junction Temperature 3 ( C) 4 5 Vf (V) Voltage Shift Vs Junction Temperature. -.5 -. DW Shift Relative (nm) Intensity 9% 85% 8% Voltage Shift (V) -.5 -. -.5 -.3 -.35-7% 5 5 75 5 5 -.4 5 5 75 5 5 3 4 5 6 7 Dominant Wavelength Shift Vs Junction Temperature Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA7 are trademarks of 6 4 CPR3EU Rev. - 5 46 Silicon Drive Durham, NC 773 USA Tel: +.99.33.53
DA7 blue Radiation Pattern This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA7 are trademarks of 5 CPR3EU Rev. - 46 Silicon Drive Durham, NC 773 USA Tel: +.99.33.53