Package. 5V (Typ) OUT CIN GND ILIM /OC. Figure 1. Typical Application Circuit. Output Discharge function. Control input logic



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1 Channel Compact High Side Switch ICs 1ch Adjustable Current Limit High Side Switch ICs BD2222G BD2242G BD2243G Description BD2222G, BD2242G and BD2243G are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. These devices are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. Moreover, the range of Current limit threshold can be adjusted from 0.2A to 1.7A by changing the external resistance. Features Adjustable Current Limit Threshold: 200mA to 1.7A Low On-Resistance (Typ 89mΩ) N-channel MOSFET Built-in Soft-Start Circuit Output Discharge Function BD2242G, BD2243G Open-Drain Fault Flag Output Thermal Shutdown Under-Voltage Lockout Reverse Current Protection when Power Switch Off Control Input Logic Active-High Active-High: BD2222G, BD2242G Active-Low: BD2243G Key Specifications Input Voltage Range: 2.8V to 5.5V On Resistance: (IN=5V) 89mΩ(Typ) Current Limit Threshold: 0.2A to 1.7A adjustable Standby Current: 1µA (Typ) Operating Temperature Range: -40 C to +85 C Package W(Typ) D(Typ) H (Max) SSOP6 2.90mm x 2.80mm x 1.25mm SSOP6 Applications USB hub in consumer appliances, PC, PC peripheral equipment and so forth Typical Application Circuit 5V (Typ) 10kΩ to 100kΩ 3.3V 10µF CIN 1µF IN GND EN ILIM /OC RLIM + - CL 120µF Lineup Output Load Current Max Adjustable Current Limit Threshold Channel Figure 1. Typical Application Circuit Control input logic Output Discharge function Package Orderable Part Number 1.5A 200mA to 1.7A 1ch High No SSOP6 Reel of 3000 BD2222G GTR 1.5A 200mA to 1.7A 1ch High Yes SSOP6 Reel of 3000 BD2242G GTR 1.5A 200mA to 1.7A 1ch Low Yes SSOP6 Reel of 3000 BD2243G GTR Product structure:silicon monolithic integrated circuit This product is not designed protection against radioactive rays 1/26 TSZ22111 14 001

Block Diagram IN GND Under-voltage Lockout Reverse current Protection EN Charge Pump Thermal Shutdown /OC ILIM Over-current Protection Delay Counter Figure 2. Block Diagram (BD2222G) IN GND Under-voltage Lockout Reverse current Protection /EN EN Charge Pump Thermal Shutdown /OC ILIM Over-current Protection Delay Counter Pin Configuration Figure 3. Block Diagram (BD2242G, BD2243G) IN 1 6 GND 2 5 ILIM EN 3 4 /OC Figure 4. Pin Configuration (TOP VIEW) Pin Descriptions Pin No. Symbol I/O Function 1 IN I Switch input and the supply voltage for the IC. 2 GND - Ground. 3 EN I 4 /OC O Enable input. High-level input turns on the switch (BD2222G, BD2242G) Low-level input turns on the switch (BD2243G) Over-current notification terminal. Low level output during over-current or over-temperature condition. Open-drain fault flag output. 5 ILIM O Current limit threshold set Pin. External resistor used to set Current limit threshold. Recommended 11.97 kω R LIM 106.3 kω 6 O Power switch output. 2/26

Absolute Maximum Ratings(Ta=25 C) Parameter Symbol Rating Unit IN Supply Voltage V IN -0.3 to +7.0 V EN Input Voltage V EN -0.3 to +7.0 V ILIM Voltage V ILIM -0.3 to +7.0 V ILIM Source Current I ILIM 1 ma /OC Voltage V /OC -0.3 to +7.0 V /OC Sink Current I /OC 10 ma Voltage -0.3 to +7.0 V Storage Temperature Tstg -55 to +150 C Power Dissipation (Note1) Pd 0.67 W (Note 1) Mounted on 70mm x 70mm x 1.6mm glass epoxy board. Reduce 5.4mW per 1 above 25 Caution: Operating the IC over the absolute maximum ratings may damage the IC. In addition, it is impossible to predict all destructive situations such as short-circuit modes, open circuit modes, etc. Therefore, it is important to consider circuit protection measures, like adding a fuse, in case the IC is operated in a special mode exceeding the absolute maximum ratings. Recommended Operating Conditions Parameter Symbol Rating Min Typ Max Unit IN Operating Voltage V IN 2.8 5.0 5.5 V Operating Temperature TOPR -40 - +85 C Electrical Characteristics (V IN = 5V, R LIM =20kΩ, Ta = 25 C, unless otherwise specified.) DC Characteristics Parameter Symbol Limit Min Typ Max Operating Current I DD - 120 168 µa Standby Current I STB - 1 5 µa EN Input Voltage Unit V ENH 2.0 - - V High input V ENL - - 0.8 V Low input Conditions V EN = 5V, = open, (BD2222G, BD2242G) V EN = 0V, = open, (BD2243G) V EN = 0V, = open, (BD2222G, BD2242G) V EN = 5V, = open, (BD2243G) EN Input Leakage I EN -1 1 1 µa V EN = 0V or 5V On-Resistance R ON - 89 120 mω I = 500mA Reverse Leak Current I REV - - 1 µa = 5V, V IN = 0V Current Limit Threshold I TH 112 212 313 R LIM = 100kΩ 911 1028 1145 ma R LIM = 20kΩ 1566 1696 1826 R LIM = 12kΩ Output Discharge Resistance R DISC 30 60 120 Ω /OC Output Low Voltage V /OC - - 0.4 V I /OC = -1mA UVLO Threshold V TUVH 2.35 2.55 2.75 V V IN increasing V TUVL 2.30 2.50 2.70 V V IN decreasing I = -1mA, V EN = 0V (BD2242G) I = -1mA, V EN = 5V (BD2243G) 3/26

AC Characteristics Parameter Symbol Limits Min Typ Max Unit Output rise Time t ON1-0.6 6 ms Output Turn-On Time t ON2-1 10 ms Output Fall Time t OFF1-1.8 20 µs Output Turn-Off Time t OFF2-3.2 40 µs /OC Delay Time t /OC 4 7 12 ms R L = 100Ω Conditions Measurement Circuit IIN A VIN VIN VEN CIN= 1µF IN GND EN ILIM /OC RLIM CIN= IN 1µF RL GND ILIM RLIM VEN EN /OC A. Operating Current, Standby Current B. EN Input Voltage, Output Rise/Fall Time Output Turn-On/ Turn-Off Time 100µF A IIN CIN= 1µF VEN VIN IN GND EN ILIM /OC 10kΩ I CL= 100µF RLIM VIN CIN= IN 1µF GND VEN EN ILIM /OC I/OC= 1mA I CL= 100µF RLIM C. On-Resistance, Current Limit Threshold, /OC Delay Time Use capacitance more than 100µF at output short circuit test by using external power supply. D. /OC Output Low Voltage VIN VIN I= 1mA CIN= IN 1µF RL GND ILIM RLIM VEN EN /OC VEN CIN= 1µF IN GND EN ILIM /OC RLIM E. UVLO Threshold F. Output Discharge Resistance Figure 5. Measurement Circuit 4/26

Timing Diagram V EN V ENH V ENL V EN V ENL V ENH t ON2 t OFF2 t ON2 t OFF2 90% 90% 90% 90% 10% 10% 10% 10% t ON1 t OFF1 t ON1 t OFF1 Figure 6. Output Rise/Fall Time (BD2222G, BD2242G) Figure 7. Output Rise/Fall Time (BD2243G) 5/26

Typical Performance Curves 160 Ta=25 C 160 V IN=5.0V Operating Current : I DD [µa] 120 80 40 Operationg Current : I DD [µa] 120 80 40 0 2 3 4 5 6 Supply Voltage : VIN[V] Figure 8. Operating Current vs Supply Voltage EN Enable 0 Figure 9. Operating Current vs Ambient Temperature EN Enable Ta=25 C V IN=5.0V 0.8 0.8 Standby Current : I STB[µA] 0.6 0.4 0.2 Standby Current : I STB[µA] 0.6 0.4 0.2 2 3 4 5 6 Supply Voltage : VIN[V] Figure 10. Standby Current vs Supply Voltage EN Disable Figure 11. Standby Current vs Ambient Temperature EN Disable 6/26

Typical Performance Curves - continued 2.0 Ta=25 C 2.0 V IN=5.0V Low to High Enable Input Voltage : V EN[V] 1.5 0.5 Low to High High to Low Enable Input Voltage : V EN[V] 1.5 0.5 High to Low 2 3 4 5 6 Supply Voltage : VIN[V] Figure 12. EN Input Voltage vs Supply Voltage Figure 13. EN Input Voltage vs Ambient Temperature 200 Ta=25 C I =500mA 200 V IN=5.0V I =500mA On Resistance : R ON [m Ω] 150 100 50 On Resistance : R ON [m Ω] 150 100 50 0 2 3 4 5 6 Supply Voltage : VIN[V] Figure 14. On-Resistance vs Supply Voltage 0 Figure 15. On-Resistance vs Ambient Temperature 7/26

Typical Performance Curves - continued 0.5 Ta=25 C R LIM=100kΩ 0.5 V IN=5.0V R LIM=100kΩ Over Current Threshold : I TH[A] 0.4 0.3 0.2 0.1 Over Current Threshold : I TH[A] 0.4 0.3 0.2 0.1 2 3 4 5 6 Supply Voltage : VIN[V] Figure 16. Over-Current Threshold 1 vs Supply Voltage Figure 17. Over-Current Threshold 1 vs Ambient Temperature 1.3 Ta=25 C 1.3 V IN=5.0V Over Current Threshold : I TH[A] 1.2 1.1 0.9 Over Current Threshold : I TH[A] 1.2 1.1 0.9 0.8 2 3 4 5 6 Supply Voltage : VIN[V] Figure 18. Over-Current Threshold 2 vs Supply Voltage 0.8 Figure 19. Over-Current Threshold 2 vs Ambient Temperature 8/26

Typical Performance Curves - continued 2.0 Ta=25 C R LIM=12kΩ 2.0 V IN=5.0V R LIM=12kΩ Over Current Threshold : I TH[A] 1.9 1.8 1.7 1.6 Over Current Threshold : I TH[A] 1.9 1.8 1.7 1.6 1.5 2 3 4 5 6 Supply Voltage : VIN[V] Figure 20. Over-Current Threshold 3 vs Supply Voltage 1.5 Figure 21. Over-Current Threshold 3 vs Ambient Temperature /OC Output Low Voltage : V /OC [mv] 100 80 60 40 20 Ta=25 C I /OC=1mA /OC Output Low Voltage : V /OC [mv] 100 80 60 40 20 V IN=5.0V I /OC=1mA 0 2 3 4 5 6 Supply Voltage : VIN[V] Figure 22. /OC Output Low Voltage vs Supply Voltage 0 Figure 23. /OC Output Low Voltage vs Ambient Temperature 9/26

Typical Performance Curves - continued 2.7 UVLO Threshold : V TUVH, VTUVL[V] 2.6 2.5 2.4 2.3 V TUVH V TUVL UVLO Hysteresis Voltage:V HSY [V] 0.8 0.6 0.4 0.2 2.2 Ambient Temperature : Ta[ ] Figure 24. UVLO Threshold vs Ambient Temperature Figure 25. UVLO Hysteresis Voltage vs Ambient Temperature 3.0 2.5 Ta=25 C R L=100Ω 3.0 2.5 V IN=5.0V R L=100Ω Output Rise Time : t ON1[ms] 2.0 1.5 0.5 Output Rise Time : t ON1[ms] 2.0 1.5 0.5 2 3 4 5 6 Supply Voltage : VIN[V] Figure 26. Output Rise Time vs Supply Voltage Figure 27. Output Rise Time vs Ambient Temperature 10/26

Typical Performance Curves - continued 3.0 2.5 Ta=25 C R L=100Ω 3.0 2.5 VIN=5.0V R L=100Ω Output Turn On Time : t ON2 [ms] 2.0 1.5 0.5 Output Turn On Time : t ON2 [ms] 2.0 1.5 0.5 2 3 4 5 6 Supply Voltage : VIN[V] Figure 28. Output Turn-On Time vs Supply Voltage Figure 29. Output Turn-On Time vs Ambient Temperature 5.0 4.0 Ta=25 C R L=100Ω 5.0 4.0 VIN=5.0V R L=100Ω Output Fall Time : t OFF1 [µs] 3.0 2.0 Output Fall Time : t OFF1 [µs] 3.0 2.0 2 3 4 5 6 Supply Voltage : VIN[V] Figure 30. Output Fall Time vs Supply Voltage Figure 31. Output Fall Time vs Ambient Temperature 11/26

Typical Performance Curves - continued 6.0 5.0 Ta=25 C R L=100Ω 6.0 5.0 V IN=5.0V R L=100Ω Output Turn Off Time : t OFF2 [µs] 4.0 3.0 2.0 Output Turn Off Time : t OFF2 [µs] 4.0 3.0 2.0 2 3 4 5 6 Supply Voltage : VIN[V] Figure 32. Output Turn-Off Time vs Supply Voltage Figure 33. Output Turn-Off Time vs Ambient Temperature 10 Ta=25 C 10 V IN=5.0V 8 8 /OC Delay Time : t /OC [ms] 6 4 2 /OC Delay Time : t /OC [ms] 6 4 2 0 2 3 4 5 6 Supply Voltage : VIN[V] Figure 34. /OC Delay Time vs Supply Voltage 0 Figure 35. /OC Delay Time vs Ambient Temperature 12/26

Typical Performance Curves - continued 200 Ta=25 C I =1mA 200 V IN=5.0V I =1mA Dsic On Resistance : R DISC [Ω] 150 100 50 Disc On Resistance : R DISC [Ω] 150 100 50 0 2 3 4 5 6 Supply Voltage : VIN[V] Figure 36. Discharge On Resistance vs Supply Voltage 0 Figure 37. Discharge On Resistance vs Ambient Temperature 13/26

Typical Wave Forms V EN V EN V /OC V /OC I IN (50mA/div.) V IN=5V R L=100Ω I IN (50mA/div.) V IN=5V R L=100Ω TIME (0.5ms/div.) Figure 38. Output Rise Characteristic (BD2242G) TIME (1µs/div.) Figure 39. Output Fall Characteristic (BD2242G) V EN V /OC V /OC C L=47µF C L=100µF C L=220µF Current limit threshold Limit current I IN (0.5A/div.) C L=47µF C L=100µF V IN=5V R L=100Ω I IN (0.5A/div.) V IN=5V C L=100µF TIME (1ms/div.) Figure 40. Inrush Current Response (BD2242G) TIME (20ms/div.) Figure 41. Over Current Response Ramped Load 14/26

Typical Wave Forms - continued V EN V IN=5V C L=100µF V EN V /OC TSD detection TSD recovery V /OC TSD detection TSD recovery Removal of load I IN (0.5A/div.) I IN (0.5A/div.) V IN=5V C L=100µF TIME (20ms/div.) Figure 42. Over Current Response Enable Into Short Circuit (BD2242G) TIME (20ms/div.) Figure 43. Over Current Response Disenable From Short Circuit (BD2242G) V IN V IN=V EN V IN V IN=V EN V /OC UVLO recovery V /OC UVLO detection I IN (50mA/div.) V /OC=3.3V R L=100Ω I IN (50mA/div.) V /OC=3.3V R L=100Ω TIME (1s/div.) Figure 44. UVLO Response Increasing VIN (BD2242G) TIME (1s/div.) Figure 45. UVLO Response Decreasing VIN (BD2242G) 15/26

Typical Wave Forms - continued V /OC V /OC V IN=5V C L=100µF V IN=5V C L=100µF I IN (1A/div.) I IN (1A/div.) TIME (2ms/div.) Figure 46. Over Current Response 1Ω Load Connected At Enable TIME (5µs/div.) Figure 47. Over Current Response 1Ω Load Connected At Enable V /OC V /OC V IN=5V C L=100µF V IN=5V C L=100µF I IN (1A/div.) I IN (1A/div.) TIME (2ms/div.) Figure 48. Over Current Response 0Ω Load Connected At Enable TIME (5µs/div.) Figure 49. Over Current Response 0Ω Load Connected At Enable 16/26

Application Circuit Example 10kΩ to 100kΩ CIN 5V (Typ) IN Controller GND EN ILIM /OC R LIM C L + - Figure 50. Application Circuit Example Application Information Ringing may cause bad influences on IC operations. In order to avoid this case, connect a bypass capacitor across IN terminal and GND terminal of IC. 1µF or higher is recommended. When excessive current flows due to output short-circuit or so, ringing occurs because of inductance between power source line to IC may exert a bad influence upon IC. In order to decrease voltage fluctuations from power source line to IC, connect a low ESR capacitor in parallel with CIN. 10µF to 100µF or higher is effective. Pull up /OC output via resistance value of 10kΩ to 100kΩ. Set up a value for CL which satisfies the application. This system connection diagram does not guarantee operation as the intended application. When using the circuit with changes to the external circuit values, make sure to leave an adequate margin for external components including static and transitional characteristics as well as the design tolerance of the IC. Functional Description 1. Switch Operation IN terminal and terminal are connected to the drain and the source of switch MOSFET respectively. The IN terminal is also used as power source input to internal control circuit. When the switch is turned on from EN control input, the IN terminal and terminal are connected by a 89mΩ(Typ) switch. In ON status, the switch is bidirectional. Therefore, when the potential of terminal is higher than that of the IN terminal, current flows from terminal to IN terminal. Since a parasitic diode between the drain and the source of switch MOSFET is canceled, current flow from to IN is prevented during off state. 2. Thermal Shutdown Circuit (TSD) If over-current would continue, the temperature of the IC would increase drastically. If the junction temperature were beyond 120 (Typ) in the condition of over-current detection, thermal shutdown circuit operates and makes power switch turn off and outputs fault flag (/OC). Then, when the junction temperature decreases lower than 110 (Typ), power switch is turned on and fault flag (/OC) is cancelled. Also, regardless of over-current condition, if the junction temperature were beyond 160 (Typ), thermal shutdown circuit makes power switch turn off and outputs fault flag (/OC).When junction temperature decreases lower than 140 (Typ), power switch is turned on and fault flag (/OC) is cancelled. Unless the fact of the increasing chips temperature is removed or the output of power switch is turned off, this operation repeats. Fault flag (/OC) is output without delay time at thermal shutdown. The thermal shutdown circuit operates when the switch is on (EN signal is active). 3. Over-Current Detection (OCD) The over current detection circuit (OCD) limits current and outputs error flag (/OC) when current flowing in each switch MOSFET exceeds a specified value. There are three cases when the OCD is activated. The OCD operates when the switch is on (EN signal is active). (1). When the switch is turned on while the output is in short-circuit status, the switch gets in current limit status immediately. (See figure 42) (2). When the output short-circuits or when high current load is connected while the switch is on, very large current flows until the over current limit circuit reacts. When this happens, the over-current limit circuit is activated and the current limitation is carried out. (See figure 48) 17/26

(3). When the output current increases gradually, current limitation does not work until the output current exceeds the over current detection value. When it exceeds the detection value, current limitation is carried out. (See Figure 41) 4. Under-Voltage Lockout (UVLO) UVLO circuit prevents the switch from turning on until the IN exceeds 2.55V(Typ). If the IN drops below 2.5V(Typ) while the switch turns on, then UVLO shuts off the power switch. UVLO has hysteresis of a 50mV(Typ). Under-voltage lockout circuit works when the switch is on (EN signal is active). (see Figure 44,45) 5. Fault Flag (/OC) Output Fault flag output is an N-MOS open drain output. At detection of over-current or thermal shutdown, output is low-level. Over-current detection has delay filter. This delay filter prevents instantaneous current detection such as inrush current at switch on, hot plug from being informed to outside, but if charge up time for output capacitance is longer than delay time, fault flag output asserts low level. When output current is close to Current Limit Threshold value, fault flag output (/OC) might be low level before turning to over-current condition because it is affected by current swinging or noise. If fault flag output is unused, /OC pin should be connected to open or ground line. Over-Current Detection Over-Current Load Removed V I ITH Limit current T/OC V/OC Figure 51. Over-Current Detection V EN Over-current detection Thermal Shutdown I V /OC Thermal Shutdown recover /OC delay time Figure 52. Over-Current Detection, Thermal Shutdown Timing (BD2222G, BD2242G) 18/26

V EN Over-current detection Thermal Shutdown I V /OC Thermal Shutdown recover /OC delay time Figure 53. Over-Current Detection, Thermal Shutdown Timing (BD2243G) 6. Adjustable Current Limit Threshold BD2222/42/43G is able to change over-current detection value from 200mA to 1.7A by connecting resistance (R LIM) between ILIM pin and GND pin. The resistance value from 11.97KΩ to 106.3kΩ is recommended for RLIM. The relational expression and the table for resistance value and over-current detection value are described below. Allocate RLIM close to IC as possible. Be careful not to be affected by parasitic resistance of board pattern because over-current detection value is depended on the resistance value between ILIM pin and GND pin. ILIM pin cannot be used as open and short to GND pin. The RLIM resistance tolerance directly affects the current limit threshold accuracy. Recommended to use low tolerance resistance. Over Current Threshold Equation, Ith(Typ)[mA] = 19364 R LIM[kΩ] -0.98 Ith(Min)[mA] = Ith(Typ)[mA] 0.98-96 Ith(Max)[mA] = Ith(Typ)[mA] 2 + 96 2000 Current Limit Threshold : Ith [ma] 1800 1600 1400 1200 1000 800 600 400 Typ. Min. Max. 200 0 0 20 40 60 80 100 120 Current Limit Resistor : RLIM [kω] Figure 54. Ith vs. RLIM graph 19/26

R LIM (kω) Current Limit Threshold (ma) MIN TYP MAX 106.30 100 200 300 70.28 198 300 402 52.40 296 400 504 41.73 394 500 606 34.65 492 600 708 29.60 590 700 810 25.83 688 800 912 22.91 786 900 1014 20.57 884 1000 1116 18.67 982 1100 1218 17.08 1080 1200 1320 15.74 1178 1300 1422 14.59 1276 1400 1524 13.60 1374 1500 1626 12.73 1472 1600 1728 11.97 1570 1700 1830 Table 1. Ith Tolerance vs. RLIM 7. Output Discharge Function (BD2242G and BD2243G) When the switch is turned off from disable control input or UVLO function, the 60Ω(Typ.) discharge circuit between and GND turns on. By turning on this switch, electric charge at capacitive load is discharged. But when the voltage of IN declines extremely, then the pin becomes Hi-Z without UVLO function. Power Dissipation (SSOP6 package) 700 600 POWER DISSIPATION : Pd [mw] 500 400 300 200 100 0 0 25 50 75 85 100 125 150 AMBIENT TEMPERATURE : Ta [ ] * 70mm x 70mm x 1.6mm Glass Epoxy Board Figure 55. Power Dissipation Curve (Pd-Ta Curve) 20/26

I/O Equivalence Circuit Symbol Pin No. Equivalent Circuit EN 3 EN /OC 4 /OC ILIM 5 ILIM BD2222G 6 BD2242G BD2243G 6 21/26

Operational Notes 1. Reverse Connection of Power Supply Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the IC s power supply terminals. 2. Power Supply Lines Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors. 3. Ground Voltage Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. 4. Ground Wiring Pattern When using both small-signal and large-current ground traces, the two ground traces should be routed separately but connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large currents. Also ensure that the ground traces of external components do not cause variations on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance. 5. Thermal Consideration Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum rating, increase the board size and copper area to prevent exceeding the Pd rating. 6. Recommended Operating Conditions These conditions represent a range within which the expected characteristics of the IC can be approximately obtained. The electrical characteristics are guaranteed under the conditions of each parameter. 7. Rush Current When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing of connections. 8. Operation Under Strong Electromagnetic Field Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction. 9. Testing on Application Boards When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC s power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage. 10. Inter-pin Short and Mounting Errors Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few. 11. Unused Input Terminals Input terminals of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause unexpected operation of the IC. So unless otherwise specified, unused input terminals should be connected to the power supply or ground line. 22/26

Operational Notes continued 12. Regarding the Input Pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor. For example (refer to figure below): When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Figure 56. Example of monolithic IC structure 13. Ceramic Capacitor When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with temperature and the decrease in nominal capacitance due to DC bias and others. 14. Thermal Shutdown Circuit(TSD) This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be within the IC s power dissipation rating. If however the rating is exceeded for a continued period, the junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat damage. 23/26

Ordering Information B D 2 2 x x G - G T R Part Number BD2222 BD2242 BD2243 Package G: SSOP6 G: Halogen free package Packaging and forming specification TR: Embossed tape and reel Marking Diagram SSOP6 (TOP VIEW) Part Number Marking 1 2 1PIN MARK LOT Number Part Number Part Number Marking BD2222G BN BD2242G AY BD2243G AZ 24/26

Physical Dimension, Tape and Reel Information Package Name SSOP6 <Tape and Reel information> Tape Quantity Direction of feed Embossed carrier tape 3000pcs TR The direction is the 1pin of product is at the upper right when you hold ( reel on the left hand and you pull out the tape on the right hand ) 1pin Reel Direction of feed Order quantity needs to be multiple of the minimum quantity. 25/26

Revision History Date Revision Changes 12.OCT.2012 0000 Draft 27.FEB.2013 0001 Over Current Threshold Limits 7.MAR.2013 001 Authentic Release 23.APR.2013 002 Add Typical Wave Forms for over current response Change I/O Equivalence Circuit (EN) 12.FEB.2014 003 Applied new style and improved understandability. Improved Symbol name. Improved in Operational Notes. Add Output Discharge Function in Functional Description 9.JUN.2014 004 Add BD2222G 26/26

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