Serial EEPROM Powered for Automotive



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Automotive Memory Products Serial EEPROM Powered for Automotive www.microchip.com/memory

Microchip Serial Memory Products Microchip Technology has developed industry-leading processes for each step in the design, manufacturing and testing phases of its serial EEPROMs, and has become one of the most respected leaders in supply of these devices to the automotive industry worldwide. Serial EEPROMs Extended s H-Temp -40ºC to 150ºC E-Temp -40ºC to 125ºC I-Temp -40ºC to 85ºC All Major Bus Types SPI 25LCXX I 2 C 24LCXX Microwire 93LCXX UNI/O 11LCXX Complete Product Lines : 128 bits to 1 Mbit Speed: Up to 20 MHz Tools MPLAB Starter Kit for Serial Memory Products Total Software Verilog and IBIS Models Microchip Advanced Parts Selector (MAPS) Serial EEPROM Highest Quality QS9000; ISO/TS16949 AEC-Q100 Compliant Pb-Free Parts Halogen Free Parts RoHS Compliant Long Product Life Cycles Innovative and Die PDIP, SOIC, TSSOP, T-DFN, MSOP, SOT-23, SC70, WLCSP, Die and Wafer Reliability High : 1 Million E/W Cycles : Over 200 Years s LC: 2.5-5.5V AA: 1.7-5.5V C: 4.5-5.5V VL: 1.5V-3.6V Serial SRAM Looking for RAM memory also? Microchip s SPI Serial SRAM products offer: A quick and easy way to add external RAM 4-pin SPI interface 8 and 32 Kbyte options 20 MHz clock speed No write cycle time Robust Design ESD Protection > 4000V Human Body Model (HBM) > 400V Machine Model (MM) > 1000V Charged Model Latch-up protection > 200 ma on all pins ESD Induced Latch-up > 100V (MM) on VDD; >400V on all I/O > 1M cycles and > 200 years data retention Up to 150 C Operation (reads and writes) Power-On Reset (POR) and Brown-Out Reset (BOR) Effective protection against noisy automotive environments Eliminates false writes Schmitt Trigger input filters for noise reduction Complete traceability including die location on wafer

Wafer-level Burn-in Microchip s Triple Test Flow is currently the most robust testing procedure for serial EEPROM devices in the industry. It tests each cell of each die three times and also performs extensive endurance and data retention tests to ensure quality and reliability. Traditional Burn-in (Old Technology) General purpose non-specific testing procedure for random logic cells Non-specific and untargeted testing mechanism Increases failure rates. Expensive, time consuming and inefficient. Introduces defect modes like bent leads and EOS that sometimes go undetected. Infant mortality of Microchip serial EEPROMs is among the lowest in the industry due to this extensive testing, excellent fabrication and highly reliable memory cell design. Microchip s Triple Test and Wafer-level Burn-in Procedure Moving beyond traditional burn-in to wafer level burn-in with the Triple Test Flow specifically targeted for memory cells has helped create the industry s most reliable memory products. Extensive Testing Every cell in every die is tested three times, including specific endurance and data retention tests to ensure highest quality. HVST, LVHF and TVPP tests target specific defects. Maverick, SBY and GBN target overall failure patterns and trends. Insight into failure modes along with flexible test flow ensures continues improvement. Triple Test Flow Microchip tests every cell in wafer form twice, then performs a final test after assembly. 1: Wafer Probe Full functional tests on 100% of die and bits; 85ºC or 125ºC 5000 erase/write cycles on all bits Key Aspects: Testing MAVERICK HVST TVPP Bake 250ºC up to 24 hours Equivalent to 100 years at 85ºC Any die with charge loss in any cell between the 2 probes is rejected to prevent infant mortality 2: Wafer Probe 2nd 100% bit test (25ºC) full-functional screen Key Aspects: Functional Test Verify Margins GBN EDIO LVHF SBY 3: Assembly & Final Test Main Goals Zero Defects Full verification of data sheet parameters for functional compliance at die and package level. Removal of manufacturing defects to ensure highest quality and reliability. Screening out of functional devices that may fail in the future. Wafer Probe Quality Screens Microchip performs additional in-house testing during wafer probe to ensure all parts are of the highest quality and to eliminate any devices that are outside the normal distribution or might possibly fail in the future. High Stress Test (HVST) HVST targets weak devices with oxide defects in RAM and logic circuits. HVST is a targeted test that eliminates these devices by stressing the oxides at higher than normal voltages. Time at Vpp (TVPP) TVPP targets oxide defects in EEPROM cells, charge pumps and other high-voltage circuits. Programming voltages (VPP) are applied to the memory array for an extended period of time in order to highlight any weak devices. Low High (LVHF) LVHF targets signal paths that are partially blocked and therefore more resistive than normal. LVHF eliminates these devices by requiring them to operate faster than specified and at voltages lower than specified. Good Die in a Bad Neighborhood (GBN) and Edge Die Ink Out (EDIO) Special algorithms target devices that function, but are suspect because of their proximity to clusters of failing devices or edge die. Rejected by EDIO screen Failing Die Passing Die (Concept) Rejected by GBN screen Rejected by EDIO screen Maverick Test Maverick test targets wafer lots with unusual parametric performance and/or yields. Separate from device data sheet parameters, intrinsic parameters such as transistor thresholds or thin film resistances are measured. Maverick testing rejects wafer lots with values outside the normal range. Statistical Bin Yield (SBY) SBY targets individual wafers with yields outside the normal range. Within a wafer lot, occasionally an individual wafer will differ significantly from the yield of all the other wafers. SBY rejects that entire wafer.

Automotive Grade Quality and Tools Microchip s best-in-class field performance is the combined result of Wafer Level Burn-In and Wafer Probe Quality Screens. Microchip Serial EEPROM Field Return PPM (Field Returns) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 Bit Fails (Bad Bits) Oxide Fails Logic Fails (Die Level) 1H-2005 2H-2005 1H-2006 2H-2006 1H-2007 2H-2007 1H-2008 2H-2008 Year 0 PPM Industry lowest field return numbers best suited for automotive applications Total Software Total Software provides a comprehensive model that helps estimate the endurance and reliability of Microchip Serial EEPROM devices. By providing operating conditions based on your application, all design tradeoffs affecting reliability can be accurately estimated both graphically and numerically in PPM, FIT and MTBF modes, saving time and ensuring a truly robust design. Microchip Serial EEPROM Percentage of Defective Units (Sample Size = 128 Units) 100 90 80 70 60 50 40 30 20 10 Supplier A Supplier B Supplier C Supplier D MICROCHIP 0 0 500,000 1,000,000 1,500,000 2,000,000 E/W Cycles at 85 C All devices from supplier A and B failed Testing shows zero Microchip EEPROM fails even at 2 million E/W cycles at 85ºC Automotive Grade* 24C16 Competitive No Fails QUALITY ISO TS-16949 (inc. VDA6.1) MICROCHIP compliant quality manufacturing systems Restricted site assembly Production Parts Approval Process (PPAP) Exceeds AEC Q-100 product qualification requirements Special screening and test methods including Maverick lot testing Long product life cycle in support of automotive industry 15 year supply requirement *Automotive grade criteria will evolve as market requirements change. 150 o C Now Offering I 2 C and SPI Serial EEPROMs with Optional Range from -55 C to +150 C Automotive Turbo Chargers and Exhaust Gas Recirculation Automotive fan motors, air valves, flaps and spark plugs Areas under the vehicle hood Additional Resources Verilog and IBIS Models Microchip Advanced Part Selector (MAPS): www.microchip.com/maps Memory Products Webinars: http://techtrain.microchip.com/webseminars Over 50 different application notes, many with source code options can be found at: www.microchip.com/appnotes Get started with Microchip s Serial EEPROMs in four easy steps: www.microchip.com/eeprom MPLAB Starter Kit for Serial Memory Products (Part Number DV243003) and PIM Packs (AC243003)

Product Specifications I 2 C Memory Products (Organization) Clock (AA, LC, C) (I, E, H) Write Protect (Hardware) 24XX00 128 bits (x8) 400 khz 1.7V-5.5V -40 C to +125ºC 1M 200 years No PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN 24XX01/014 1 Kbit (x8) 400 khz 1.7V-5.5V -40 C to +150ºC 1M 200 years W, ½ PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, SC70 24XX02/024 2 Kbits (x8) 400 khz 1.7V-5.5V -40 C to +125ºC 1M 200 years W, ½ PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, SC70 24XX04 4 Kbits (x8) 400 khz 1.7V-5.5V -40 C to +125ºC 1M 200 years W, ½ PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, WLCSP 24XX08 8 Kbits (x8) 400 khz 1.7V-5.5V -40 C to +125ºC 1M 200 years W, ½ PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP 24XX16 16 Kbits (x8) 400 khz 1.7V-5.5V -40 C to +125ºC 1M 200 years W, ½ PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, WLCSP 24XX32 32 Kbits (x8) 400 khz 1.7V-5.5V -40 C to +125ºC 1M 200 years W, ¼ PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, WLCSP 24XX64/65 64 Kbits (x8) 1 MHz 1.7V-5.5V -40 C to +125ºC 1M/10M 200 years W, ¼ PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, WLCSP 24XX128 128 Kbits (x8) 1 MHz 1.7V-5.5V -40 C to +125ºC 1M 200 years Yes PDIP, SOIC, TSSOP, 2x3 T-DFN, 6x5 DFN, MSOP, WLCSP 24XX256 256 Kbits (x8) 1 MHz 1.7V-5.5V -40 C to +125ºC 1M 200 years Yes PDIP, SOIC, TSSOP, 6x5 DFN, MSOP, WLCSP 24XX512 512 Kbits (x8) 1 MHz 1.7V-5.5V -40 C to +125ºC 1M 200 years Yes PDIP, SOIC, TSSOP, 6x5 DFN, WLCSP 24XX1025 1 Mbit (x8) 1 MHz 1.7V-5.5V -40 C to +125ºC 1M 200 years Yes PDIP, SOIC, SOIJ, 6x5 DFN UNI/O Bus Memory Products Microwire Memory Products SPI Memory Products (Organization) (x8 or x16) (Organization) Clock Clock Clock (AA, LC) (AA, LC, C) (AA, LC) (I, E, H) Write Protect (Software) 25XX010A 1 Kbit (x8) 10 MHz 1.8V-5.5V -40 C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 2x3 T-DFN, MSOP, SOT-23 25XX020A 2 Kbits (x8) 10 MHz 1.8V-5.5V -40 C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 2x3 T-DFN, MSOP, SOT-23 25XX040A 4 Kbits (x8) 10 MHz 1.8V-5.5V -40 C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 2x3 T-DFN, MSOP, SOT-23 25XX080C/D 8 Kbits (x8) 10 MHz 1.8V-5.5V -40 C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, MSOP, 2x3 T-DFN 25XX160C/D 16 Kbits (x8) 10 MHz 1.8V-5.5V -40 C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, MSOP, 2x3 T-DFN 25XX320A 32 Kbits (x8) 10 MHz 1.8V-5.5V -40 C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, MSOP, 2x3 T-DFN 25XX640A 64 Kbits (x8) 10 MHz 1.8V-5.5V -40 C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, MSOP, 2x3 T-DFN 25XX128 128 Kbits (x8) 10 MHz 1.8V-5.5V -40 C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 6x5 DFN 25XX256 256 Kbits (x8) 10 MHz 1.8V-5.5V -40 C to +150ºC 1M 200 years W, ½, ¼ PDIP, SOIC, TSSOP, 6x5 DFN 25XX512 512 Kbits (x8) 20 MHz 1.8V-5.5V -40 C to +125ºC 1M 200 years W, ½, ¼ PDIP, SOIC, 6x5 DFN 25XX1024 1 Mbit (x8) 20 MHz 1.8V-5.5V -40 C to +125ºC 1M 200 years W, ½, ¼ PDIP, SOIJ, 6x5 DFN 1. Range: AA = 1.7-5.5V; LC = 2.5-5.5V; C = 4.5-5.5V 2. I = -40ºC to 85ºC; E = -40ºC to 125ºC; H = -40ºC to 150ºC 3. Pb-Free, Halogen Free and RoHS Compliant 4. Write Protect: W = Whole Array, ½ = Half Array, ¼ = Quarter Array 5. ESD protection > 4 kv (HBM); > 400V (MM) on all pins 6. H Temp is SOIC only (I, E) Write Protect (Hardware) Read Current 93XX46A/B/C 1 Kbit 3 MHz 1.8V-5.5V -40 C to +125ºC 1M 200 years No 1 ma PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP 93XX56A/B/C 2 Kbits 3 MHz 1.8V-5.5V -40 C to +125ºC 1M 200 years No 1 ma PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP 93XX66A/B/C 4 Kbits 3 MHz 1.8V-5.5V -40 C to +125ºC 1M 200 years No 1 ma PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP 93XX76A/B/C 8 Kbits 3 MHz 1.8V-5.5V -40 C to +125ºC 1M 200 years Yes 1 ma PDIP, SOIC, TSSOP, 2x3 T-DFN, MSOP 93XX86A/B/C 16 Kbits 3 MHz 1.8V-5.5V -40 C to +125ºC 1M 200 years Yes 1 ma PDIP, SOIC, TSSOP, 2x3 T-DFN, MSOP A: x8 Organization, B: x16 Organization, C: Selectable x8 or x16 Organization (I, E) Write Protect (Software) Standby Current 11XX010 1 Kbit (x8) 100 khz 1.8V-5.5V -40 C to +125ºC 1M 200 years W, ½, ¼ 1 μa PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP 11XX020 2 Kbits (x8) 100 khz 1.8V-5.5V -40 C to +125ºC 1M 200 years W, ½, ¼ 1 μa PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP 11XX040 4 Kbits (x8) 100 khz 1.8V-5.5V -40 C to +125ºC 1M 200 years W, ½, ¼ 1 μa PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP 11XX080 8 Kbits (x8) 100 khz 1.8V-5.5V -40 C to +125ºC 1M 200 years W, ½, ¼ 1 μa PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP 11XX160 16 Kbits (x8) 100 khz 1.8V-5.5V -40 C to +125ºC 1M 200 years W, ½, ¼ 1 μa PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP SRAM Memory Products (Organization) Clock (A, K) (I, E) Read Current (ma) Standby Current 23x640 8KB (64 Kbits) 20 MHz 1.8V, 3V -40 C to +125ºC 3 ma 4 μa PDIP, SOIC, TSSOP 23X256 32 KB (256 Kbits) 20 MHz 1.8V, 3V -40 C to +125ºC 3 ma 4 μa PDIP, SOIC, TSSOP 1. Range: A = 1.5-1.95V; K = 2.7V-3.6V 2. All s are Pb-Free, RoHS Compliant and Halogen Free For up to date product information visit: www.microchip.com/memory

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