TSL250, TSL251, TLS252 LIGHT-TO-VOLTAGE OPTICAL SENSORS



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TSL50, TSL5, TLS5 SOES004C AUGUST 99 REVISED NOVEMBER 995 Monolithic Silicon IC Containing Photodiode, Operational Amplifier, and Feedback Components Converts Light Intensity to Output Voltage High Irradiance Responsivity Typically 80 mv/(µw/cm ) at λ p = 880 nm (TSL50) Compact -Leaded Clear Plastic Package Low Dark (Offset) Voltage... 0 mv Max at 5 C, V DD = 5 V Single-Supply Operation Wide Supply-Voltage Range... V to 9 V Low Supply Current...800 µa Typical at V DD = 5 V Advanced LinCMOS Technology description The TSL50, TSL5, and TSL5 are light-to-voltage optical sensors, each combining a photodiode and a transimpedance amplifier (feedback resistor = 6 MΩ, 8 MΩ, and MΩ respectively) on a single monolithic IC. The output voltage is directly proportional to the light intensity (irradiance) on the photodiode. These devices utilize Texas Instruments silicon-gate LinCMOS technology, which provides improved amplifier offset-voltage stability and low power consumption. functional block diagram + Voltage Output absolute maximum ratings over operating free-air temperature range (unless otherwise noted) Supply voltage, V DD (see Note )........................................................... 0 V Output current, I O...................................................................... ±0 ma Duration of short-circuit current at (or below) 5 C (see Note )................................... 5 s Operating free-air temperature range, T A........................................... 5 C to 85 C Storage temperature range, T stg................................................... 5 C to 85 C Lead temperature,6 mm (/6 inch) from case for 0 seconds............................... 40 C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES:. All voltages are with respect to GND.. Output may be shorted to supply. recommended operating conditions MIN NOM MAX UNIT Supply voltage, VDD 5 9 V Operating free-air temperature, TA 0 70 C Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. LinCMOS is a trademark of Texas Instruments Incorporated. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright 995, Texas Instruments Incorporated POST OFFICE BOX 6550 DALLAS, TEXAS 7565 POST OFFICE BOX 44 HOUSTON, TEXAS 775 44

TSL50, TSL5, TLS5 SOES004C AUGUST 99 REVISED NOVEMBER 995 electrical characteristics at V DD = 5 V, T A = 5 C, λp = 880 nm, R L = 0 kω (unless otherwise noted) (see Note ) PARAMETER TEST TSL50 TSL5 TSL5 CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX VD Dark voltage Ee = 0 0 0 0 mv VOM Maximum output voltage swing Ee = mw/cm..5..5..5 V Ee = 5 µw/cm VO Output voltage Ee = 45 µw/cm V αvo Temperature coefficient of output voltage (VO) Ee = 85 µw/cm Ee = 5 µw/cm, TA = 0 C to 70 C Ee = 45 µw/cm, TA = 0 C to 70 C Ee = 85 µw/cm, TA = 0 C to 70 C ± TSL50 TSL5 TSL5 PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNIT UNIT ± mv/ C Ne Irradiance responsivity See Note 4 80 45 7 mv/(µw/cm) Ee = 5 µw/cm 900 600 IDD Supply current Ee = 45 µw/cm 900 600 µa NOTES: Ee = 85 µw/cm 900 600. The input irradiance Ee is supplied by a GaAlAs infrared-emitting diode with λp = 880 nm. 4. Irradiance responsivity is characterized over the range VO = 0.05 to V. operating characteristics at T A = 5 C (see Figure ) tr Output pulse rise time VDD = 5 V, λp = 880 nm 60 90 7 µs tf Output pulse fall time VDD = 5 V, λp = 880 nm 60 90 7 µs Vn Output noise voltage VDD = 5 V, f = 0 Hz 0.6 0.5 0.4 µv/ Hz ± PARAMETER MEASUREMENT INFORMATION Pulse Generator IRED (see Note A) VDD + TSL5x RL Output Input Ee tr 90% 90% tf TEST CIRCUIT Output (see Note B) 0% 0% VOLTAGE WAVEFORM NOTES: A. The input irradiance is supplied by a pulsed GaAlAs infrared-emitting diode with the following characteristics: λp = 880 nm, tr < µs, tf < µs. B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 00 ns, Zi MHz, Ci 0 pf. Figure. Switching Times POST OFFICE BOX 6550 DALLAS, TEXAS 7565 POST OFFICE BOX 44 HOUSTON, TEXAS 775 44

TSL50, TSL5, TLS5 TYPICAL CHARACTERISTICS SOES004C AUGUST 99 REVISED NOVEMBER 995 Output Voltage V VO 0 0. 0.0 VDD = 5 V λp = 880 nm No Load TA = 5 C OUTPUT VOLTAGE IRRADIANCE TSL50 TSL5 TSL5 Relative Responsivity 0.8 0.6 0.4 0. PHOTODIODE SPECTRAL RESPONSIVITY TA = 5 C 0.00 0. 0 00 Ee Irradiance µw/cm 0 00 500 700 900 λ Wavelength nm 00 Figure Figure MAXIMUM OUTPUT VOLTAGE SUPPLY VOLTAGE SUPPLY CURRENT OUTPUT VOLTAGE Maximum Output Voltage V V OM 9 8 7 6 5 4 Ee =.6 mw/cm λp = 880 nm RL = 0 kω TA = 5 C 4 5 6 7 8 9 VDD Supply Voltage V 0 Supply Current ma I DD 0.8 0.6 0.4 0. VDD = 5 V No Load (RL = ) TA = 5 C 0 0 VO Output Voltage V 4 Figure 4 Figure 5 POST OFFICE BOX 6550 DALLAS, TEXAS 7565 POST OFFICE BOX 44 HOUSTON, TEXAS 775 44

TSL50, TSL5, TLS5 SOES004C AUGUST 99 REVISED NOVEMBER 995 TYPICAL CHARACTERISTICS NORMALIZED OUTPUT VOLTAGE ANGULAR DISPLACEMENT Normalized Output Voltage V O 0.8 0.6 0.4 0. TSL50 TSL5, 5 Optical Axis 0 80 60 40 0 0 0 40 60 80 θ Angular Displacement Figure 6 4 POST OFFICE BOX 6550 DALLAS, TEXAS 7565 POST OFFICE BOX 44 HOUSTON, TEXAS 775 44

TSL50, TSL5, TLS5 APPLICATION INFORMATION SOES004C AUGUST 99 REVISED NOVEMBER 995 The photodiode/amplifier chip is packaged in a clear plastic three-leaded package. The integrated photodiode active area is typically,0 mm (0.006 in ) for TSL50, 0,5 mm (0.00078 in ) for the TSL5, and 0,6 mm (0.0004 in ) for the TSL5.,0 (0.079) T.P. 0,65 (0.05) 0,4 (0.06) 0,75 (0.00) 0,65 (0.06),5 (0.089),75 (0.069),5 (0.049) 0,75 (0.09) Pin Pin Pin GND VDD OUT 4,0 (0.57) T.P. 0,86 (0.04) 0,46 (0.08) 0,65 (0.06) 0,55 (0.0),05 (0.08),55 (0.06) 0,5 (0.0) 0,85 (0.05) 5,7 (0.69), (0.50) 4,8 (0.89) 4,4 (0.7) 0,75 (0.00) R 0,85 (0.0) 0,5 (0.04),05 (0.0),55 (0.00),75 (0.069),5 (0.049) 4,85 (0.9) 4,5 (0.7) 4,5 (0.7),85 (0.5) 5,05 (0.99) 4,55 (0.79) True position when unit is installed. NOTES: A. All linear dimensions are in millimeters (inches). B. This drawing is subject to change without notice.,74 (0.08),4 (0.09) Figure 7. Mechanical Data POST OFFICE BOX 6550 DALLAS, TEXAS 7565 POST OFFICE BOX 44 HOUSTON, TEXAS 775 44 5

TSL50, TSL5, TLS5 SOES004C AUGUST 99 REVISED NOVEMBER 995 6 POST OFFICE BOX 6550 DALLAS, TEXAS 7565 POST OFFICE BOX 44 HOUSTON, TEXAS 775 44

IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in accordance with TI s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage ( Critical Applications ). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI products in such applications requires the written approval of an appropriate TI officer. Questions concerning potential risk applications should be directed to TI through a local SC sales office. In order to minimize risks associated with the customer s applications, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor does TI warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. Copyright 995, Texas Instruments Incorporated