P2O LED. High Power LED PRODUCT DATASHEET. Introduction. RoHS Compliant



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P2O LED High Power LED Introduction The P2O LEDs from SemiLEDs utilize innovative MvpLED technology which delivers superior levels of optical performance and reliability. Use of state of the art silicone packaging guarantees a long lifetime and high levels of efficacy. P2O LEDs are reflow solderable. Special lens design allows uniform light with small size optics and makes the P2O LED suitable for a wide variety of lighting applications. The special phosphor technology used in warm white P2O LEDs give them a very good color stability under high temperature conditions. The typical CCT change is less than 50K when the junction temperature reaches 100 C. Table of Contents Features... 1 Characteristics. 1 Relative Spectral Power Distribution.. 3 Typical Light Output Characteristics vs. Junction Temperature 4 Typical Spatial Radiation Pattern 5 Thermal Design. 7 Typical Forward L I Characteristics.. 8 Typical Forward I V Characteristics.. 8 Mechanical Dimensions 9 Shipping Package Information. 10 Recommended Solder Pad Design 11 Recommended Soldering Profile.. 12 Reliability 13

Features Excellent Operating Life High Efficacy Low Thermal Resistance Superior ESD Protection No UV Characteristics Absolute Maximum Ratings (Tj=25 ) Parameter DC Forward Current (ma) LED Junction Temperature LED Operating Temperature Storage Temperature SMD Device Instant Light Fully Dimmable Rating White Series 700 ma 125 40 ~110 40 ~110 Soldering Temperature Max. 260 / Max. 10sec. (JEDEC 020c) ESD Sensitivity Reverse Voltage 2,000 V HBM (JESD 22A 114 B) Not designed to be driven in reverse bias (VR 5V) Preconditioning Acc. to JEDEC Level 2 General Characteristics at 350mA (Tj=25 ) Part number Color Typ. CRI P2O W Dominant Wavelength λd Peak Wavelength λp * Correlated Color Temperature, CCT 2θ 1/2 Temperature Coefficient of Vf (mv/ ) Thermal Resistance Junction to Lead Min Max ΔV F /ΔT J ( /W) RΘJ L Daylight 70 4750K 12000K 145 3 10 Neutral White 75 3700K 4750K 132 3 10 Warm White 80 2600K 3700K 125 3 10 Notes: 1. The CCT is measured with an accuracy of ±200K 2. The peak/dominant wavelength is measured with an accuracy of ±1nm 1

Luminous Flux and Forward Voltage (Tj=25 ) Part number P2O W Color Daylight Neutral White Warm White Performance at Test Current (350mA) Performance at 700mA VF Typical Minimum Luminous Flux (lm) or Group Luminous Flux (lm) or Radiometric Power* Radiometric Power* (mw) Min Max (mw) U3 100 2.8 3.8 170 VA 110 2.8 3.8 185 VB 120 2.8 3.8 200 VC 130 2.8 3.8 220 VD 140 2.8 3.8 240 U2 90 2.8 3.8 160 U3 100 2.8 3.8 170 VA 110 2.8 3.8 185 VB 120 2.8 3.8 200 UA 80 2.8 3.8 141 U2 90 2.8 3.8 160 U3 100 2.8 3.8 170 VA 110 2.8 3.8 185 Notes: 1. Luminous flux is measured with an accuracy of ±10% 2. The forward voltage is measured with an accuracy of ±0.1V 2

Relative Spectral Power Distribution, Tj=25 C White light 3

Typical Light Output Characteristics Vs. Temperature 4

Typical Spatial Radiation Pattern P2O W, Daylight P2O W, Neutral White 5

P2O W, Warm White 6

Thermal Design Thermal design of the end product is important. The thermal resistance between the junction and the solder point (RΘ J L ) is 10 C /W, and the end product is designed to minimize the thermal resistance from the solder point to ambient in order to optimize the emitter life and optical characteristics. The maximum operation current is determined by the plot of Allowable Forward Current vs. Ambient Temperature. The junction temperature can be correlated to the thermal resistance between the junction and ambient (Rja) by the following equation. Tj=Ta + Rja*W Tj: LED junction temperature Ta: Ambient temperature Rja: Thermal resistance between the junction and ambient W: Input power (I F *V F ) 7

Typical Forward L I Characteristics White Series Typical Forward I V Characteristics White Series 8

Mechanical Dimensions Notes: 1. Drawing is not to scale 2. All dimensions are in millimeter 9

Shipping Package Information Tube All dimensions are in millimeter Dimensions (L*W*H) Emitter Quantity Tube 424*16.7*10.0 mm 50 EA 10

Recommended Solder Pad Design Copper Layer Electrical Connection Heat Barrier Solder mask Solder paste Notes: 1. Drawing is not to scale 2. All dimensions are in millimeter 11

Recommended Soldering Profile LEDs should be soldered using the parameter listed below. As a general guideline, users are suggested to follow the recommended soldering profile provided by the manufacturer of the solder paste. Although the recommended soldering conditions are specified in the list, reflow soldering at the lowest possible temperature is advised for the LEDs. Profile Feature Sn Pb Eutectic Assembly Pb Free Assembly Average Ramp up Rate (Ts max to Tp) 3 /second max. 3 /second max. Preheat - Temperature Min(Ts min ) 100 150 - Temperature Max(Ts max ) 150 200 - Time(ts min to ts max ) 60 120 seconds 60 180 seconds Time maintained above: - Temperature(T L ) 183 217 - Time(t L ) 60 150 seconds 60 150 seconds Peak/classification Temperature(Tp) 215 240 Time within 5 of actual Peak Temperature(tp) 10 30 seconds 20 40 seconds Ramp Down Rate 6 /second max. 6 /second max. Time 25 to Peak Temperature 6 minutes max. 8 minutes max. 12

Reliability Information Stress Test Stress Condition Stress Duration Room Temperature Operating Life (RTOL) Tb=25, If=700mA 1000 hours High Temperature Operating Life (HTOL) Tb=85, If=700mA 1000 hours Wet High Temperature Operating Life (WHTOL) Ta=85, RH=85%, If=700mA 1000 hours Temperature Cycles (TMCL) 40 /125, 15min dwell, 5min transfer 200 cycles High Temperature Storage Life (HTSL) Ta=110, non operating 1000 hours Low Temperature Storage Life (LTOL) Ta= 40 non operating 1000 hours Solder Heat Resistance (SHR) 240, 10 sec Failure Criteria: 1. Brightness attenuate difference <10% 2. Forward voltage difference: ±20% Notes: 1. Tb: board temperature 2. Ta: ambient temperature Notice: This product is not for use, sale, or importation into the United States. Any agreement, documentation, or communication (in any form, through any medium and for any purpose) related to this product is provided subject to the above disclaimer, and no (and seller hereby disclaims any) indemnification is provided for this product against any infringement claim of intellectual property rights in the United States. The limitations above do not apply to products that are purchased and delivered before October 1, 2012. 13

About Us SemiLEDs Corporation is a US based manufacturer of ultra high brightness LED chips with state of the art fabrication facilities in Hsinchu Science Park, Taiwan. SemiLEDs specializes in the development and manufacturing of vertical LED chips in blue (white), green, and UV using a patented copper alloy base. This unique design allows for higher performance and longer lumen maintenance. In December 2008, The World Economic Forum recognized SemiLEDs innovations with the 2009 Technology Pioneer Award. SemiLEDs is fully ISO 9001:2008 and ISO 14001:2004 Certified. SemiLEDs is a publicly traded company on NASDAQ Global Select Market (stock symbol LEDS ). For investor information, please contact us at investors@semileds.com. For further company or product information, please visit us at or please contact sales@ semileds.com. ASIA PACIFIC 3F, No. 11, KeJung Rd. Chu Nan Site Hsinchu Science Park Chu Nan 350, Miao Li County Taiwan, ROC Tel: +886 37 586788 Fax: +886 37 582688 sales@semileds.com 2005 2013 SemiLEDs. All Right Reserved 14