Spectroscopic : What it is, what it will do, and what it won t do by Harland G. Tompkins Introduction Fundamentals Anatomy of an ellipsometric spectrum Analysis of an ellipsometric spectrum What you can do, and what you can t do 1-1 H. Tompkins
Perspective Introduction Spectroscopic is an optical technique used for analysis and metrology A light beam is reflected off of the sample of interest The light beam is then analyzed to see what the sample did to the light beam We then draw conclusions about the sample thickness optical constants microstructure Model based all measurement techniques are model based 1-2 H. Tompkins
Polarized Light Fundamentals The Name comes from elliptically polarized light better name would be polarimetry + Linearly Polarized combining two light beams in phase, gives linearly polarized light = 1-3 H. Tompkins
Polarized Light (continued) Fundamentals Elliptically Polarized combining two light beams out of phase, gives elliptically polarized light + Two ways pass through a retarder reflect off a surface absorbing material substrate with film = 1-4 H. Tompkins
Laws of Reflection and Refraction Fundamentals Reflection φ i = φ r Refraction (Snell s law) for dielectric, i.e. k = 0 n 1 sin φ 1 = n 2 sin φ 2 in general Ñ 1 sin φ 1 = Ñ 2 sin φ 2 sine function is complex corresponding complex cosine function sin 2 φ 2 + cos 2 φ 2 = 1 1-5 H. Tompkins
Reflections (orientation) Fundamentals Electric Field Vector Plane-of-Incidence incoming normal outgoing E s E p Plane of Incidence s-waves and p-waves senkrecht and parallel 1-6 H. Tompkins
Equations of Fresnel Fundamentals Fresnel reflection coefficients, complex numbers p r 12 s r 12 ratio of Amplitude of outgoing to incoming different for p-waves and s-waves r p 12 = Ñ cos φ Ñ cos φ 2 1 1 2 s Ñ 2 cos φ 1 + Ñ 1 cos φ r 12 2 = Ñ 1 cos φ 1 Ñ 2 cos φ 2 Ñ 1 cos φ 1 + Ñ 2 cos φ 2 Reflectance R ratio of Intensity square of Amplitude for a single interface R p = r p 12 2 R s = r s 12 2 1-7 H. Tompkins
Brewster Angle (for dielectrics) Fundamentals r s always negative and non-zero r p passes through zero p R goes to zero The Brewster Angle sometimes called the principal angle, polarizing angle Reflected light is s-polarized ramifications tan φ B = n 2 n 1 cos φ 2 = sin φ B 1-8 H. Tompkins
Brewster Angle, for metals Fundamentals if k is non-zero, r s and r p are complex cannot plot r s and r p vs angle of incidence However, we can still plot the Reflectance p R has a minimum, although not zero Actually called the principal angle 1-9 H. Tompkins
Reflections with Films Fundamentals, Amplitude, phase of outgoing vs incoming Reflectometry Intensity of outgoing vs incoming Total Reflection Coefficient corresponds to Fresnel Coefficients complex number R p = r p 12 + r p 23 exp( j2β) 1 + r p 12 r p 23 exp( j2β) β is phase change from top to bottom of film Ñ 1 Ñ 2 Ñ 3 φ 1 φ 2 R s = r s 12 1+ r 12 φ 3 s + r 23 exp( j2β) s exp( j2β) s r 23 β = 2π d λ Ñ 2 cosφ 2 d 1-10 H. Tompkins
and Reflectometry definitions Fundamentals Reflectance R p = R p 2 R s = R s 2 Delta, the phase difference induced by the reflection if δ 1 is the phase difference before, and δ 2 the phase difference after the reflection then = δ 1 - δ 2 ranges from zero to 360º (or -180 to +180º ) Psi, the ratio of the amplitude diminutions ranges from zero to 90º tan Ψ= Rp R s The Fundamental Equation of ρ = R R p s ρ = tan Ψ e j tan Ψ e j = Rp R s 1-11 H. Tompkins
More Perspective Fundamentals Ellipsometers measure and Ψ (sometimes only cos ) Properties of the probing beam Quantities such as thickness and index of refraction are calculated quantities, based on a model. Properties of the sample Values of and Ψ are always correct Whether thickness and index are correct depend on the model Both precision and accuracy for and Ψ Precision for thickness Accuracy,??? 1-12 H. Tompkins
Examples The Anatomy of an Ellipsometric Spectrum Thin oxides on Silicon Ψ ( ) 50 40 30 20 10 ( ) 180 150 120 90 60 film-free 10 Å 25 Å 30 60 Å 100 Å 0 200 400 600 800 1000 film-free 10 Å 25 Å 60 Å 100 Å 0 200 400 600 800 1000 7.0 Si Optical Constants 6.0 Index 'n' 6.0 5.0 4.0 3.0 2.0 1.0 0.0 200 400 600 800 1000 n k 5.0 4.0 3.0 2.0 1.0 Ext. Coeff. ' k' Index 'n' 1.58 1.56 1.54 1.52 1.50 1.48 SiO2 Optical Constants 1.46 0.00 200 400 600 800 1000 n k 0.10 0.08 0.06 0.04 0.02 Ext. Coeff. 'k' 1-13 H. Tompkins
Examples The Anatomy of an Ellipsometric Spectrum Thicker oxide on Silicon 90 360 Ψ in degrees 60 30 2200 Å 2500 Å in degrees 240 120 2200 Å 2500 Å 180 150 0 200 400 600 800 1000 0 200 400 600 120 800 1000 90 2200 Å 2500 Å 60 7.0 Si Optical Constants 6.0 30 200 400 600 800 1000 Index 'n' 6.0 5.0 4.0 3.0 2.0 1.0 0.0 200 400 600 800 1000 n k 5.0 4.0 3.0 2.0 1.0 Ext. Coeff. ' k' Index 'n' 1.58 1.56 1.54 1.52 1.50 1.48 SiO2 Optical Constants n k 0.10 0.08 0.06 0.04 0.02 Ext. Coeff. 'k' 1.46 0.00 200 400 600 800 1000 1-14 H. Tompkins
Examples Polysilicon on oxide on silicon The Anatomy of an Ellipsometric Spectrum 3 srough 25 Å 2 polysilicon 3000 Å 1 sio2 1000 Å 0 si 1 mm 90 180 Ψ in degrees 60 30 0 200 400 600 800 1000 120 60 0 200 400 600 800 1000 6.0 polysilicon OC's 5.0 Index 'n' 5.0 4.0 3.0 2.0 n k 4.0 3.0 2.0 1.0 Ext. Coeff. 'k' 1.0 0.0 200 400 600 800 1000 1-15 H. Tompkins
Examples The Anatomy of an Ellipsometric Spectrum Thin chromium on silicon 1 cr 300 Å 0 si 1 mm Ψ 60 40 20 0 300 400 500 600 700 800 film-free 50 Å 100 Å 200 Å 300 Å in degrees 180 120 60 0 300 400 500 600 700 800 film-free 50 Å 100 Å 200 Å 300 Å 5.0 Chromium OC's 4.5 caveats Index 'n' 4.0 3.0 2.0 1.0 n k 4.2 3.9 3.6 3.3 3.0 2.7 Ext. Coeff. 'k' 0.0 2.4 300 400 500 600 700 800 1-16 H. Tompkins
Analysis of an Ellipsometric Spectrum Determining Film properties from SE spectra Except for substrates, we cannot do a direct calculation What Measures: What we are interested in: Psi (Ψ) Delta ( ) Desired information must be extracted Through a model-based analysis using equations to describe interaction of light and materials Film Thickness Refractive Index Surface Roughness Interfacial Regions Composition Crystallinity Anisotropy Uniformity 1-17 H. Tompkins
How we analyze data: Analysis of an Ellipsometric Spectrum 1-18 H. Tompkins
Building the model Analysis of an Ellipsometric Spectrum Optical Constants Tabulated list when OC s are very well known single-crystal thermal oxide of Si, LPCVD nitride Dispersion Equation Cauchy equation dielectrics, primarily empirical not K-K consistent 1 cauchy 0 Å 0 si 1 mm B ( λ) n C n = A + + n 2 λ n 4 λ 1-19 H. Tompkins
Building the model Optical Constants Dispersion Equation Oscillator equation Analysis of an Ellipsometric Spectrum 2 polysilicon 0 Å 1 sio2 1000 Å 0 si 1 mm 6.0 5.0 Index 'n' 5.0 4.0 3.0 2.0 1.0 Ext. Coeff. 'k' 4.0 3.0 2.0 1.0 0.0 0 300 600 900 1200 1500 1800 0.0 0 300 600 900 1200 1500 1800 ε 1 20 15 10 5 0-5 'n' 5.0 4.0 3.0 2.0 1.0 0.0 0 300 600 900 1200 1500 1800-10 0 2 4 6 8 10 ε 2 30 25 20 15 4.0 3.0 2.0 1.0 0.0 0 300 600 900 1200 1500 1800 10 5 0 0 2 4 6 8 10 Photon Energy (ev) Photon Energy (ev) 1-20 H. Tompkins 'k'
Building the model Optical Constants Mixture EMA, effective medium approximation Analysis of an Ellipsometric Spectrum 3 srough 0 Å 2 polysilicon 2000 Å 1 sio2 1000 Å 0 si 1 mm Graded Layers Anisotropic Layers Superlattice 1-21 H. Tompkins
Building the model Seed Values Thickness process engineer s guess analyst's guess trial-and-error till it looks good Cauchy coefficients A n between ~ 1.4 and 2.2 higher for poly or a_si Oscillators tough GenOsc formalism Analysis of an Ellipsometric Spectrum A wise old sage once said: The best way to solve a problem is to have solved one just like it yesterday. 1-22 H. Tompkins
The regression process Don t turn all the variables loose to begin with e.g. for a Cauchy thickness first then A n and thickness then include B n add in extinction coefficient For a stack don t try to determine thicknesses and OC s simultaneously Analysis of an Ellipsometric Spectrum creative deposition done is a relative term does it make sense A wise old sage once said: You can have it all, you just can t have it all at once. 1-23 H. Tompkins
Requirements What you can do, and what you can t do plane parallel interfaces roughness film must be uniform graded layers anisotropic layers multilayers need to know something about OC s coherence patterned wafers non-uniform thickness macroscopic roughness helps if the film-of-interest is on top optical contrast polymer on glass 1-24 H. Tompkins
Optical Constants of Very Thin Films consider a single wavelength (632.8 nm) at 70 oxynitride on silicon Delta/Psi trajectories What you can do, and what you can t do below 100Å, very difficult to determine index, n distinguishing one material from another determining thicknesses in a stack e.g., ONO however, if you re willing to assume n, can determine thickness of very thin film classic experiment of Archer how far can you be off? 1-25 H. Tompkins
Optical Constants of Very Thin Films What you can do, and what you can t do making it better directions DUV or VUV IR shorter wavelengths extinction coefficient often nonzero absorption bands are different for different materials 1-26 H. Tompkins
Optical Constants of Very Thin Films What you can do, and what you can t do φ 1 Ñ 1 Ñ 2 φ 2 d Fundamental Limitation Our ability to make films with: plane parallel interfaces uniformity Ñ 3 φ 3 1-27 H. Tompkins
Acknowledgements Bell Laboratories, prior to the divestiture (< 1982) Motorola J. A. Woollam Co., Inc. James Hilfiker Stefan Zollner 1-28 H. Tompkins