Detection of both poles, S pole or N pole Active "L", active "H" Nch open-drain output, CMOS output

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1 S-5712 Series LOW VOLTAGE OPERATION BOTH POLES / UNIPOLAR DETECTION TYPE HALL IC SII Semiconductor Corporation, Rev.4.6_00 This IC, developed by CMOS technology, is a high-accuracy Hall IC that operates at a low voltage and low current consumption. The output voltage changes when this IC detects the intensity level of magnetic flux density. Using this IC with a magnet makes it possible to detect the open / close in various devices. High-density mounting is possible by using the small SOT-23-3 or the super-small SNT-4A package. Due to its low voltage operation and low current consumption, this IC is suitable for battery-operated portable devices. Also, due to its high-accuracy magnetic characteristics, this IC can make operation's dispersion in the system combined with magnet smaller. SII Semiconductor Corporation offers a "magnetism simulation service" that provides the ideal combination of magnets and our Hall ICs for customer systems. Our magnetism simulation service will reduce prototype production, development period and development costs. In addition, it will contribute to optimization of parts to realize high cost performance. For more information regarding our magnetism simulation service, contact our sales office. Features Pole detection *1 : Detection logic for magnetism *1 : Output form *1 : Magnetic sensitivity *1 : Operating cycle (current consumption) *1 : Power supply voltage range: Operation temperature range: Lead-free (Sn 100%), halogen-free Detection of both poles, S pole or N pole Active "L", active "H" Nch open-drain output, CMOS output B OP = 1.8 mt typ. B OP = 3.0 mt typ. B OP = 4.5 mt typ. Product with both poles detection t CYCLE = 5.70 ms (I DD = 12.0 μa) typ. t CYCLE = ms (I DD = 2.0 μa) typ. t CYCLE = ms (I DD = 1.0 μa) typ. Product with S pole or N pole detection t CYCLE = 6.05 ms (I DD = 6.0 μa) typ. t CYCLE = ms (I DD = 1.4 μa) typ. V DD = 1.6 V to 3.5 V Ta = 40 C to +85 C *1. The option can be selected. Applications Mobile phone, smart phone Notebook PC, tablet PC Digital video camera Plaything, portable game Home appliance Packages SOT-23-3 SNT-4A 1

2 S-5712 Series Rev.4.6_00 Block Diagrams 1. Nch open-drain output product VDD OUT Sleep / Awake logic *1 *1 Chopping stabilized amplifier VSS *1. Parasitic diode Figure 1 2. CMOS output product VDD Sleep / Awake logic *1 *1 OUT Chopping stabilized amplifier *1 VSS *1. Parasitic diode Figure 2 2

3 Rev.4.6_00 S-5712 Series Product Name Structure 1. Product name S-5712 x x x x x - xxxx U Environmental code U: Lead-free (Sn 100%), halogen-free Package name (abbreviation) and packing specifications *1 M3T1: SOT-23-3, Tape I4T1: SNT-4A, Tape Magnetic sensitivity 0: B OP = 1.8 mt typ. 1: B OP = 3.0 mt typ. 2: B OP = 4.5 mt typ. Detection logic for magnetism L: Active "L" H: Active "H" Pole detection D: Detection of both poles S: Detection of S pole N: Detection of N pole Output form N: Nch open-drain output C: CMOS output *1. Refer to the tape drawing. Operating cycle A: t CYCLE = ms typ. (Product with both poles detection) t CYCLE = ms typ. (Product with S pole or N pole detection) B: t CYCLE = ms typ. (Product with both poles detection) C: t CYCLE = 5.70 ms typ. (Product with both poles detection) t CYCLE = 6.05 ms typ. (Product with S pole or N pole detection) 2. Packages Table 1 Package Drawing Codes Package Name Dimension Tape Reel Land SOT-23-3 MP003-C-P-SD MP003-C-C-SD MP003-Z-R-SD SNT-4A PF004-A-P-SD PF004-A-C-SD PF004-A-R-SD PF004-A-L-SD 3

4 S-5712 Series Rev.4.6_00 3. Product name list 3. 1 SOT Nch open-drain output product Product Name Operating Cycle (t CYCLE ) Table 2 Output Form Pole Detection Detection Logic for Magnetism Magnetic Sensitivity (B OP ) S-5712ANDL0-M3T1U ms typ. Nch open-drain output Both poles Active "L" 1.8 mt typ. S-5712ANDL1-M3T1U ms typ. Nch open-drain output Both poles Active "L" 3.0 mt typ. S-5712ANDL2-M3T1U ms typ. Nch open-drain output Both poles Active "L" 4.5 mt typ. S-5712ANSL1-M3T1U ms typ. Nch open-drain output S pole Active "L" 3.0 mt typ. S-5712ANSL2-M3T1U ms typ. Nch open-drain output S pole Active "L" 4.5 mt typ. S-5712ANSH1-M3T1U ms typ. Nch open-drain output S pole Active "H" 3.0 mt typ. S-5712BNDL2-M3T1U ms typ. Nch open-drain output Both poles Active "L" 4.5 mt typ. Remark Please contact our sales office for products other than the above CMOS output product Product Name Operating Cycle (t CYCLE ) Table 3 Output Form Pole Detection Detection Logic for Magnetism Magnetic Sensitivity (B OP ) S-5712ACDL1-M3T1U ms typ. CMOS output Both poles Active "L" 3.0 mt typ. S-5712ACDL2-M3T1U ms typ. CMOS output Both poles Active "L" 4.5 mt typ. S-5712ACDH1-M3T1U ms typ. CMOS output Both poles Active "H" 3.0 mt typ. S-5712ACDH2-M3T1U ms typ. CMOS output Both poles Active "H" 4.5 mt typ. S-5712ACSL1-M3T1U ms typ. CMOS output S pole Active "L" 3.0 mt typ. S-5712ACSL2-M3T1U ms typ. CMOS output S pole Active "L" 4.5 mt typ. S-5712ACNL1-M3T1U ms typ. CMOS output N pole Active "L" 3.0 mt typ. S-5712ACNL2-M3T1U ms typ. CMOS output N pole Active "L" 4.5 mt typ. S-5712CCDL1-M3T1U 5.70 ms typ. CMOS output Both poles Active "L" 3.0 mt typ. S-5712CCSL1-M3T1U 6.05 ms typ. CMOS output S pole Active "L" 3.0 mt typ. Remark Please contact our sales office for products other than the above. 4

5 Rev.4.6_00 S-5712 Series 3. 2 SNT-4A Nch open-drain output product Product Name Operating Cycle (t CYCLE ) Table 4 Output Form Pole Detection Detection Logic for Magnetism Magnetic Sensitivity (B OP ) S-5712ANDL1-I4T1U ms typ. Nch open-drain output Both poles Active "L" 3.0 mt typ. S-5712ANDL2-I4T1U ms typ. Nch open-drain output Both poles Active "L" 4.5 mt typ. S-5712ANSL1-I4T1U ms typ. Nch open-drain output S pole Active "L" 3.0 mt typ. S-5712ANSL2-I4T1U ms typ. Nch open-drain output S pole Active "L" 4.5 mt typ. Remark Please contact our sales office for products other than the above CMOS output product Product Name Operating Cycle (t CYCLE ) Table 5 Output Form Pole Detection Detection Logic for Magnetism Magnetic Sensitivity (B OP ) S-5712ACDL0-I4T1U ms typ. CMOS output Both poles Active "L" 1.8 mt typ. S-5712ACDL1-I4T1U ms typ. CMOS output Both poles Active "L" 3.0 mt typ. S-5712ACDL2-I4T1U ms typ. CMOS output Both poles Active "L" 4.5 mt typ. S-5712ACDH1-I4T1U ms typ. CMOS output Both poles Active "H" 3.0 mt typ. S-5712ACDH2-I4T1U ms typ. CMOS output Both poles Active "H" 4.5 mt typ. S-5712ACSL1-I4T1U ms typ. CMOS output S pole Active "L" 3.0 mt typ. S-5712ACSL2-I4T1U ms typ. CMOS output S pole Active "L" 4.5 mt typ. S-5712ACSH1-I4T1U ms typ. CMOS output S pole Active "H" 3.0 mt typ. S-5712ACSH2-I4T1U ms typ. CMOS output S pole Active "H" 4.5 mt typ. S-5712ACNL1-I4T1U ms typ. CMOS output N pole Active "L" 3.0 mt typ. S-5712ACNL2-I4T1U ms typ. CMOS output N pole Active "L" 4.5 mt typ. S-5712ACNH1-I4T1U ms typ. CMOS output N pole Active "H" 3.0 mt typ. S-5712BCDL1-I4T1U ms typ. CMOS output Both poles Active "L" 3.0 mt typ. S-5712BCDL2-I4T1U ms typ. CMOS output Both poles Active "L" 4.5 mt typ. S-5712BCDH1-I4T1U ms typ. CMOS output Both poles Active "H" 3.0 mt typ. S-5712BCDH2-I4T1U ms typ. CMOS output Both poles Active "H" 4.5 mt typ. S-5712CCDL1-I4T1U 5.70 ms typ. CMOS output Both poles Active "L" 3.0 mt typ. S-5712CCDH1-I4T1U 5.70 ms typ. CMOS output Both poles Active "H" 3.0 mt typ. S-5712CCSL1-I4T1U 6.05 ms typ. CMOS output S pole Active "L" 3.0 mt typ. S-5712CCNL1-I4T1U 6.05 ms typ. CMOS output N pole Active "L" 3.0 mt typ. Remark Please contact our sales office for products other than the above. 5

6 S-5712 Series Rev.4.6_00 Pin Configurations 1. SOT-23-3 Top view Table 6 Pin No. Symbol Pin Description 1 VSS GND pin 2 VDD Power supply pin 3 OUT Output pin Figure 3 2. SNT-4A Top view Figure 4 Table 7 Pin No. Symbol Pin Description 1 VDD Power supply pin 2 VSS GND pin 3 NC *1 No connection 4 OUT Output pin *1. The NC pin is electrically open. The NC pin can be connected to the VDD pin or the VSS pin. 6

7 Rev.4.6_00 S-5712 Series Absolute Maximum Ratings Table 8 (Ta = +25 C unless otherwise specified) Item Symbol Absolute Maximum Rating Unit Power supply voltage V DD V SS 0.3 to V SS V Output current I OUT ±1.0 ma Output voltage Nch open-drain output product V OUT V SS 0.3 to V SS CMOS output product V SS 0.3 to V DD V Operation ambient temperature T opr 40 to +85 C Storage temperature T stg 40 to +125 C Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. V Thermal Resistance Value Table 9 Item Symbol Condition Min. Typ. Max. Unit Board C/W SOT-23-3 Junction-to-ambient thermal resistance *1 Board C/W θ ja Board C/W SNT-4A Board C/W *1. Test environment: compliance with JEDEC STANDARD JESD51-2A Remark Refer to " Thermal Characteristics" for details of power dissipation and test board. 7

8 S-5712 Series Rev.4.6_00 Electrical Characteristics 1. Product with both poles detection 1. 1 S-5712AxDxx Table 10 (Ta = +25 C, V DD = 1.85 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Power supply voltage V DD V Current consumption I DD Average value μa 1 Output voltage V OUT Nch open-drain output product CMOS output product Output transistor Nch, I OUT = 0.5 ma Output transistor Nch, I OUT = 0.5 ma Output transistor Pch, I OUT = 0.5 ma 0.4 V V 2 V DD 0.4 V 3 Leakage current I LEAK Nch open-drain output product Output transistor Nch, V OUT = 3.5 V 1 μa 4 Awake mode time t AW 0.10 ms Sleep mode time t SL ms Operating cycle t CYCLE t AW + t SL ms 1. 2 S-5712BxDxx Table 11 (Ta = +25 C, V DD = 1.85 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Power supply voltage V DD V Current consumption I DD Average value μa 1 Output voltage V OUT Nch open-drain output product CMOS output product Output transistor Nch, I OUT = 0.5 ma Output transistor Nch, I OUT = 0.5 ma Output transistor Pch, I OUT = 0.5 ma 0.4 V V 2 V DD 0.4 V 3 Leakage current I LEAK Nch open-drain output product Output transistor Nch, V OUT = 3.5 V 1 μa 4 Awake mode time t AW 0.10 ms Sleep mode time t SL ms Operating cycle t CYCLE t AW + t SL ms 8

9 Rev.4.6_00 S-5712 Series 1. 3 S-5712CxDxx Table 12 (Ta = +25 C, V DD = 1.85 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Power supply voltage V DD V Current consumption I DD Average value μa 1 Output voltage V OUT Nch open-drain output product CMOS output product Output transistor Nch, I OUT = 0.5 ma Output transistor Nch, I OUT = 0.5 ma Output transistor Pch, I OUT = 0.5 ma Test Circuit 0.4 V V 2 V DD 0.4 V 3 Leakage current I LEAK Nch open-drain output product Output transistor Nch, V OUT = 3.5 V 1 μa 4 Awake mode time t AW 0.10 ms Sleep mode time t SL 5.60 ms Operating cycle t CYCLE t AW + t SL ms 9

10 S-5712 Series Rev.4.6_00 2. Product with S pole and N pole detection 2. 1 S-5712AxSxx, S-5712AxNxx Table 13 (Ta = +25 C, V DD = 1.85 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Power supply voltage V DD V Current consumption I DD Average value μa 1 Output voltage V OUT Nch open-drain output product CMOS output product Output transistor Nch, I OUT = 0.5 ma Output transistor Nch, I OUT = 0.5 ma Output transistor Pch, I OUT = 0.5 ma 0.4 V V 2 V DD 0.4 V 3 Leakage current I LEAK Nch open-drain output product Output transistor Nch, V OUT = 3.5 V 1 μa 4 Awake mode time t AW 0.05 ms Sleep mode time t SL ms Operating cycle t CYCLE t AW + t SL ms 2. 2 S-5712CxSxx, S-5712CxNxx Table 14 (Ta = +25 C, V DD = 1.85 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Power supply voltage V DD V Current consumption I DD Average value μa 1 Output voltage V OUT Nch open-drain output product CMOS output product Output transistor Nch, I OUT = 0.5 ma Output transistor Nch, I OUT = 0.5 ma Output transistor Pch, I OUT = 0.5 ma 0.4 V V 2 V DD 0.4 V 3 Leakage current I LEAK Nch open-drain output product Output transistor Nch, V OUT = 3.5 V 1 μa 4 Awake mode time t AW 0.05 ms Sleep mode time t SL 6.00 ms Operating cycle t CYCLE t AW + t SL ms 10

11 Rev.4.6_00 S-5712 Series Magnetic Characteristics 1. Product with both poles detection 1. 1 Product with B OP = 1.8 mt typ. Table 15 (Ta = +25 C, V DD = 1.85 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point *1 S pole B OPS mt 5 N pole B OPN mt 5 Release point *2 S pole B RPS mt 5 N pole B RPN mt 5 Hysteresis width *3 S pole B HYSS B HYSS = B OPS B RPS 0.7 mt 5 N pole B HYSN B HYSN = B OPN B RPN 0.7 mt Product with B OP = 3.0 mt typ. Table 16 (Ta = +25 C, V DD = 1.85 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point *1 S pole B OPS mt 5 N pole B OPN mt 5 Release point *2 S pole B RPS mt 5 N pole B RPN mt 5 Hysteresis width *3 S pole B HYSS B HYSS = B OPS B RPS 0.8 mt 5 N pole B HYSN B HYSN = B OPN B RPN 0.8 mt Product with B OP = 4.5 mt typ. Table 17 (Ta = +25 C, V DD = 1.85 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point *1 S pole B OPS mt 5 N pole B OPN mt 5 Release point *2 S pole B RPS mt 5 N pole B RPN mt 5 Hysteresis width *3 S pole B HYSS B HYSS = B OPS B RPS 1.0 mt 5 N pole B HYSN B HYSN = B OPN B RPN 1.0 mt 5 11

12 S-5712 Series Rev.4.6_00 2. Product with S pole detection 2. 1 Product with B OP = 1.8 mt typ. Table 18 (Ta = +25 C, V DD = 1.85 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point *1 S pole B OPS mt 5 Release point *2 S pole B RPS mt 5 Hysteresis width *3 S pole B HYSS B HYSS = B OPS B RPS 0.7 mt Product with B OP = 3.0 mt typ. Table 19 (Ta = +25 C, V DD = 1.85 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point *1 S pole B OPS mt 5 Release point *2 S pole B RPS mt 5 Hysteresis width *3 S pole B HYSS B HYSS = B OPS B RPS 0.8 mt Product with B OP = 4.5 mt typ. Table 20 (Ta = +25 C, V DD = 1.85 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point *1 S pole B OPS mt 5 Release point *2 S pole B RPS mt 5 Hysteresis width *3 S pole B HYSS B HYSS = B OPS B RPS 1.0 mt 5 12

13 Rev.4.6_00 S-5712 Series 3. Product with N pole detection 3. 1 Product with B OP = 1.8 mt typ. Table 21 (Ta = +25 C, V DD = 1.85 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point *1 N pole B OPN mt 5 Release point *2 N pole B RPN mt 5 Hysteresis width *3 N pole B HYSN B HYSN = B OPN B RPN 0.7 mt Product with B OP = 3.0 mt typ. Table 22 (Ta = +25 C, V DD = 1.85 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point *1 N pole B OPN mt 5 Release point *2 N pole B RPN mt 5 Hysteresis width *3 N pole B HYSN B HYSN = B OPN B RPN 0.8 mt Product with B OP = 4.5 mt typ. Table 23 (Ta = +25 C, V DD = 1.85 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point *1 N pole B OPN mt 5 Release point *2 N pole B RPN mt 5 Hysteresis width *3 N pole B HYSN B HYSN = B OPN B RPN 1.0 mt 5 *1. B OPN, B OPS : Operation points B OPN and B OPS are the values of magnetic flux density when the output voltage (V OUT ) changes after the magnetic flux density applied to this IC by the magnet (N pole or S pole) is increased (by moving the magnet closer). Even when the magnetic flux density exceeds B OPN or B OPS, V OUT retains the status. *2. B RPN, B RPS : Release points B RPN and B RPS are the values of magnetic flux density when the output voltage (V OUT ) changes after the magnetic flux density applied to this IC by the magnet (N pole or S pole) is decreased (the magnet is moved further away). Even when the magnetic flux density falls below B RPN or B RPS, V OUT retains the status. *3. B HYSN, B HYSS : Hysteresis widths B HYSN and B HYSS are the difference between B OPN and B RPN, and B OPS and B RPS, respectively. Remark The unit of magnetic density mt can be converted by using the formula 1 mt = 10 Gauss. 13

14 S-5712 Series Rev.4.6_00 Test Circuits A R *1 100 kω VDD S-5712 Series OUT VSS *1. Resistor (R) is unnecessary for the CMOS output product. Figure 5 Test Circuit 1 VDD S-5712 Series OUT VSS V A Figure 6 Test Circuit 2 VDD S-5712 Series OUT VSS V A Figure 7 Test Circuit 3 14

15 Rev.4.6_00 S-5712 Series VDD S-5712 Series OUT VSS V A Figure 8 Test Circuit 4 R *1 100 kω VDD S-5712 Series OUT VSS V *1. Resistor (R) is unnecessary for the CMOS output product. Figure 9 Test Circuit 5 15

16 S-5712 Series Rev.4.6_00 Standard Circuit C IN 0.1 μf VDD S-5712 Series OUT VSS R *1 100 kω *1. Resistor (R) is unnecessary for the CMOS output product. Figure 10 Caution The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. 16

17 Rev.4.6_00 S-5712 Series Operation 1. Direction of applied magnetic flux This IC detects the flux density which is vertical to the marking surface. In the product with both poles detection, the output voltage (V OUT ) is inverted when the S pole or N pole is moved closer to the marking surface. In the product with S pole detection, V OUT is inverted when the S pole is moved closer to the marking surface. In the product with N pole detection, V OUT is inverted when the N pole is moved closer to the marking surface. Figure 11 and Figure 12 show the direction in which magnetic flux is being applied SOT SNT-4A N S Marking surface N S Marking surface 2. Position of Hall sensor Figure 11 Figure 12 Figure 13 and Figure 14 show the position of Hall sensor. The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as described below. The following also shows the distance (typ. value) between the marking surface and the chip surface of a package SOT-23-3 Top view 1 The center of Hall sensor; in this φ 0.3 mm 2. 2 SNT-4A Top view The center of Hall sensor; in this φ 0.3 mm mm typ mm typ. Figure 13 Figure 14 17

18 S-5712 Series Rev.4.6_00 3. Basic operation This IC changes the output voltage level (V OUT ) according to the level of the magnetic flux density (N pole or S pole) applied by a magnet. The following explains the operation when the magnetism detection logic is active "L" Product with both poles detection When the magnetic flux density vertical to the marking surface exceeds the operation point (B OPN or B OPS ) after the S pole or N pole of a magnet is moved closer to the marking surface of this IC, V OUT changes from "H" to "L". When the S pole or N pole of a magnet is moved further away from the marking surface of this IC and the magnetic flux density is lower than the release point (B RPN or B RPS ), V OUT changes from "L" to "H". Figure 15 shows the relationship between the magnetic flux density and V OUT. B HYSN V OUT B HYSS H N pole B OPN B RPN 0 B RPS B OPS Magnetic flux density (B) L S pole Figure Product with S pole detection When the magnetic flux density vertical to the marking surface exceeds B OPS after the S pole of a magnet is moved closer to the marking surface of this IC, V OUT changes from "H" to "L". When the S pole of a magnet is moved further away from the marking surface of this IC and the magnetic flux density is lower than B RPS, V OUT changes from "L" to "H". Figure 16 shows the relationship between the magnetic flux density and V OUT. V OUT B HYSS H N pole 0 B RPS B OPS Magnetic flux density (B) L S pole Figure 16 18

19 Rev.4.6_00 S-5712 Series 3. 3 Product with N pole detection When the magnetic flux density vertical to the marking surface exceeds B OPN after the N pole of a magnet is moved closer to the marking surface of this IC, V OUT changes from "H" to "L". When the N pole of a magnet is moved further away from the marking surface of this IC and the magnetic flux density is lower than B RPN, V OUT changes from "L" to "H". Figure 17 shows the relationship between the magnetic flux density and V OUT. B HYSN V OUT H N pole B OPN B RPN L S pole 0 Magnetic flux density (B) Figure 17 19

20 S-5712 Series Rev.4.6_00 Precautions If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by feedthrough current. Take care with the pattern wiring to ensure that the impedance of the power supply is low. Note that the IC may malfunction if the power supply voltage rapidly changes. Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. Large stress on this IC may affect on the magnetic characteristics. Avoid large stress which is caused by bend and distortion during mounting the IC on a board or handle after mounting. SII Semiconductor Corporation claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. 20

21 Rev.4.6_00 S-5712 Series Thermal Characteristics 1. SOT T j = +125 C max. Power dissipation (PD) [W] Board W Board W Ambient temperature (Ta) [C] Figure 18 Power Dissipation of Package (When Mounted on Board) 1. 1 Board 1 * mm Table 24 Figure mm Item Specification Thermal resistance value 200 C/W (θ ja ) Size mm 76.2 mm t1.6 mm Material FR-4 Number of copper foil layer 2 1 Land pattern and wiring for testing: t0.070 mm 2 Copper foil layer mm 74.2 mm t0.070 mm Thermal via 1. 2 Board 2 * mm Table 25 Figure mm *1. The board is same in SOT-23-3, SOT-23-5 and SOT Item Specification Thermal resistance value 165 C/W (θ ja ) Size mm 76.2 mm t1.6 mm Material FR-4 Number of copper foil layer 4 1 Land pattern and wiring for testing: t0.070 mm mm 74.2 mm t0.035 mm Copper foil layer mm 74.2 mm t0.035 mm mm 74.2 mm t0.070 mm Thermal via 21

22 S-5712 Series Rev.4.6_00 2. SNT-4A 1.0 T j = +125 C max. Power dissipation (PD) [W] Board W Board W Ambient temperature (Ta) [C] Figure 21 Power Dissipation of Package (When Mounted on Board) 2. 1 Board mm Table 26 Figure mm Item Specification Thermal resistance value 300 C/W (θ ja ) Size mm 76.2 mm t1.6 mm Material FR-4 Number of copper foil layer 2 1 Land pattern and wiring for testing: t0.070 mm 2 Copper foil layer mm 74.2 mm t0.070 mm Thermal via 2. 2 Board mm Table 27 Figure mm Item Specification Thermal resistance value 242 C/W (θ ja ) Size mm 76.2 mm t1.6 mm Material FR-4 Number of copper foil layer 4 1 Land pattern and wiring for testing: t0.070 mm mm 74.2 mm t0.035 mm Copper foil layer mm 74.2 mm t0.035 mm mm 74.2 mm t0.070 mm Thermal via 22

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30 Disclaimers (Handling Precautions) 1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and application circuit examples, etc.) is current as of publishing date of this document and is subject to change without notice. 2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of any specific mass-production design. SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or infringement of third-party intellectual property rights and any other rights due to the use of the information described herein. 3. SII Semiconductor Corporation is not responsible for damages caused by the incorrect information described herein. 4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute maximum ratings, operation voltage range and electrical characteristics, etc. SII Semiconductor Corporation is not responsible for damages caused by failures and/or accidents, etc. that occur due to the use of products outside their specified ranges. 5. When using the products described herein, confirm their applications, and the laws and regulations of the region or country where they are used and verify suitability, safety and other factors for the intended use. 6. When exporting the products described herein, comply with the Foreign Exchange and Foreign Trade Act and all other export-related laws, and follow the required procedures. 7. The products described herein must not be used or provided (exported) for the purposes of the development of weapons of mass destruction or military use. SII Semiconductor Corporation is not responsible for any provision (export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons, missiles, or other military use. 8. The products described herein are not designed to be used as part of any device or equipment that may affect the human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses. Do not use those products without the prior written permission of SII Semiconductor Corporation. Especially, the products described herein cannot be used for life support devices, devices implanted in the human body and devices that directly affect human life, etc. Prior consultation with our sales office is required when considering the above uses. SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our products. 9. Semiconductor products may fail or malfunction with some probability. The user of these products should therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction. The entire system must be sufficiently evaluated and applied on customer's own responsibility. 10. The products described herein are not designed to be radiation-proof. The necessary radiation measures should be taken in the product design by the customer depending on the intended use. 11. The products described herein do not affect human health under normal use. However, they contain chemical substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Take care when handling these with the bare hands to prevent injuries, etc. 12. When disposing of the products described herein, comply with the laws and ordinances of the country or region where they are used. 13. The information described herein contains copyright information and know-how of SII Semiconductor Corporation. The information described herein does not convey any license under any intellectual property rights or any other rights belonging to SII Semiconductor Corporation or a third party. Reproduction or copying of the information described herein for the purpose of disclosing it to a third-party without the express permission of SII Semiconductor Corporation is strictly prohibited. 14. For more details on the information described herein, contact our sales office