Ibero-America IC Design Contest (Silterra, Chipus & ISTEC) Florida International University April 25, 2013
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1 Ibero-America IC Design Contest (Silterra, Chipus & ISTEC) Florida International University April 25, 2013
2 2013 IC Design Contest Background: The IC Design Contest is a collaboration between Silterra Malaysia, a leading Malaysian foundry, Chipus Microelectronics, a Brazilian analog IP design house, and the Ibero-American Science&Technology Consortium, ISTEC. The goals of this contest are: For Silterra, as an ISTEC partner, to help foster research and innovation in Ibero-America To introduce Silterra as a foundry of choice for Latin-American IC designers To allow designers in the region to have their designs validated in silicon Details: The contest will be open to university, R&D Institutes and R&D company departments, with access to EDA tools compatible with Silterra PDKs The designs to be based on Silterra s 0.18 micron technology Details about design categories will be disclosed soon Continued 2
3 2013 IC Design Contest Details (cont.): Contest to run throughout 2013 The best design in each category will be chosen by using a figure-of-merit (FOM) to be announced later Access to Silterra s PDKs/technology specs to be provided to the contestants The winner design in each category will be offered a free shuttle in a Silterra MPW for silicon verification Preliminary information is provided at the contest website: Further details on the IC design contest to be updated on the contest website. 3
4 SilTerra Overview SilTerra headquarters located at Kulim Hi-Tech Industrial Park, Malaysia Worldwide reachable Sales offices in the U.S. and Taiwan Business Partners in China, Japan, Korea & Europe Production started in Q Top Fab of 2002 (Semiconductor International) ISO 9001:2008, ISO 14001:2004, OHSAS 18001:2007 and QC certified Workforce Competency >1200 employees 4
5 Our Core Business Offer Foundry Solutions for Advanced CMOS & Specialty Technologies Leading foundry-matched logic technologies (T-like & U-like) Mixed-signal and RF technologies Leading-edge high voltage technologies Advanced Analog technologies (BCD, V-Tr FET) MEMS Non-Volatile Memory (OTP, MTP and eflash) More Than Moore Tech 5
6 SilTerra s Focused Strategies Provide Leading Foundry Matched Processes Logic, mixed signal and RF High voltage technologies for display drivers BCD/PowerMOS technologies for Smart Power IC Embedded NVM tech for consumer applications Offer Specialized Technologies - Custom processes to meet special requirements Deliver World-class Manufacturing Performance First time proto success 6 Sigma QC program for continuous improvement in yield, cycle-time & cost reduction Leverage IP and Design Network for Complete Design Solution - Application driven IP strategy - Best-in-class IP blocks 6
7 SilTerra Market Positioning Focus in high volume & high growth market applications Digital Consumer Chipset Display Drivers Wireless Connectivity Wired / Networking chipsets PC Connectivity & Others 350nm 250nm 180nm 160nm 153nm 130nm 110nm 90nm 65nm Mass Production Silterra Positioning In Development 7
8 Our Target Market Mobile TV Tuner WLAN / GPS RF Transceiver Bluetooth Link FM Tuner Printer Fax Modem Router (xdsl) Switches Home Gateway USB Modem PCIe-SATA Bridge PCIe-USB Bridge SSD Controller ROM/RW Drive PC Audio Display Driver Touch Controller DTV T-Con SD Memory Controller Digital Photo Frame USB Flash Drive GPS MP3 / PMP 8
9 Logic Technology Leadership Leading foundry compatible processes High volume production with stable yield Intercept sweet spots of target application segments Offer cost effective migration path (0.18µm to 0.11µm) Offer 130nm and 110nm Aluminum BEOL Provide high quality design kits Supply application optimized IP blocks 9
10 RF CMOS Technology Leadership Advanced RF CMOS technologies High performance, low noise processes Triple-well, high value resistors, thick metal inductors, finger and MiM caps Stacked MiM Caps (4fF/µm²) Redistribution Layers Offered 0.18, 0.16, 0.13µm & 0.11µm RFCMOS nodes 0.13 & 0.11 RFCMOS Al BEOL in development Accurate analog models MOSFET characterized to 20GHz Support BSIM3, BSIM4 & PSP Models Comprehensive PDK 10
11 High Voltage Technology Leadership Advanced processes optimized for display drivers 0.22µm to 0.11µm Extremely low leakage Industry leading aggressive SRAM cells (25% smaller) for high resolution displays Three HV modules available: 6V, 21V and 32V Industry first C13HV-1TSRAM in production Winner of 2009 Frost and Sullivan Industrial Technologies Award High volume production for top tier customers Customized design libraries OTP Macro & efuse bitcell are available MTP and 90nm HV is in development 11
12 POWER MOSFET Value Propositions 0.18µm Power MOSFET Technology Trench-type Gate electrode Low Rdson MOSFET devices (20V, 30V, 60V and 75V Vbd) Low mask count Superb yield and device performance Target for DC-DC Converter socket in Battery charger and Notebook Design Service supported 12
13 180nm BCDMOS Value Propositions Integrated with 0.18um logic CMOS 1.8/5V with HV LDMOS ( 20V/24V/40V ). 50V/60V in development Optimized for applications requiring high voltage CMOS with high digital gate counts with thick metal. Integrated with SilTerra 0.18um RFCMOS processing capability for complete power equipped wireless SoC. Skillful resurf technique allows wide range of breakdown voltage to be obtained thru layout optimization for HV transistors. TCAD calibrated for HV LDMOS allows Pre-defined HV LDMOS with various on-resistances optimized for BVDss and area. Analog and passive options (MiM, HRI, UTM, NPN/PNP, Zener, SBD) fasten the design. Cadence proven foundry design kit. 13
14 Platform-Based IP Strategy Best-of-breed application focused IP portfolio Analog blocks, high speed I/Os, processor cores, memories Foundation design libraries Silicon proven IP blocks Enable fast design cycles and first-time-success Extensive partnership network to provide IP and design support Custom IP to meet specific design requirements Fast turn-around time 14
15 Complete Foundry Design Ecosystem Foundry Design Kit (DR, Models etc ) Foundation IPs (Std Cell, SRAM,I/O) Design IPs ( CPU Core, Hi Speed Interface, Conversion IP, Embedded Memory, Analog IP ) Process Design Kit (Cadence, Mentor Synopsys) 15
16 Enabling System on Chip Library Platform Standard Cells Embedded Memory I/O Functionality Pervasive SoC IP CPU ARM7 ARM9 MIPS 4Kc High Speed Interfaces DDR Serial PHYs USB 2.0 PHY SSTL1.8 LVDS Analog IP Voltage regulator Bandgap Reference Analog MUX USB PHY Regulator ARM Core ADC DSP Signal Data Conversion Analog-Digital Converter Digital-Analog Converter Delay Locked Loop Phase Locked Loop 16
17 Non-Volatile Memory Solutions Partner Tech Applications All Logic All HV ROM Code Fuse Trim Gamma Control Analog Matching Resistor V C18G/C16G C13HV/C11HV RFID Touch Controller C18G Smart Card MCU 17
18 Design Solutions Partners Design Tools Library IP Design Service 18
19 Fab 1 Overview Wafer size: 200mm Equipment is capable down to 90nm Designed capacity: 40,000 WSPM Installed capacity: 38,000 WSPM 100,000 feet² Class 100 clean room SMIF Class 1 mini-environments 100% ASML scanners (I-Line, DUV & ArF) ISO 9001:2008, ISO 14001:2004, OHSAS 18001:2007 and QC certified 19
20 Technology Portfolio Developing Ready 90nm 110nm 130nm 153nm 160nm 180nm >250nm Main Stream Logic HV MX/RF MTP/OTP eflash BCD More Than Moore Power MOS MEMS 20
21 Production Large Panel CL200H18 3.3/18V Mainstream HV Small Panel CL160H21 1.8/5V/21V CL160H32X 1.8/3.3/5/32V CL160H32 1.8/3.3/5/32V CL180H5 1.8/3.3/5V CL180H32 1.8/3.3/5/32V CL160H32 1.8/3.3/7/32V CL110H32 + MRAM 1.5/3.3/6/32V Advanced HV Small Panel CL130H32 1.5/3.3/6/32V CL130H32 1.5/3.3/6/32V 1TSRAM CL110H32 1.5/3.3/6/32V CL130H32 1.5/3.3/6/32V 1TSRAM-X CL110H32 + NVM 1.5/3.3/6/32V CL090H32 1.2/3.3/6/32V CL080H32 1.2/3.3/6/32V Note: Left edge of box is start of pilot production. 21
22 Logic / Mixed Signal CL130U 1.2 / 3.3V CL130LVT 1.2/2.5, 3.3V CL180GH5 1.8/5.0V CL180G 1.8/3.3V CL130G 1.2/2.5, 3.3V CL130Mix VT 1.2/2.5, 3.3V CL160GH5 1.8/5.0V CL160G 1.8/3.3V CL110G 1.2/2.5, 3.3V CL130HVT 1.2/2.5, 3.3V CL180G5 1.8/5.0V CL153G 1.8/3.3V CL110GH5 1.2/5.0V CL110U 1.2 / 3.3V CL130GH5 1.2 / 5V CL130AL 1.2 / 3.3V CL110G5 1.2 / 5V CL130G5 1.2 / 5V CL110AL 1.2/ 3.3V CL090G 1.0/1.8, 2.5, 3.3V Low Power CL180LP 1.8/3.3V CL130LP 1.5/2.5, 3.3V CL090LP 1.2/1.8, 2.5, 3.3V Note: Left edge of box is start of pilot production CL130MixVT is the combination of C13G and C13HVT. 22
23 Power MOSFET VTr MOS 20V, 30V VTr MOS 60V,70V,75V Schottky 45V, 60V VTr- MOS 50V or 100V Power Mgmt CL180BCD 1.8/5/20V, 24V CL180BCD CL180BCD 1.8/5/40V 1.8/5/50V CL180BCD 1.8/5/60V Non Volatile Memory One Time Programming Multiple-Time Programming CL180G eflash RFCMOS CL180MR 1.8/3.3V CL180LPMR 1.8/3.3V CL160MR 1.8/3.3V CL130LPMR 1.5/2.5, 3.3V CL130MR 1.2/2.5,3.3V CL110MR 1.2/2.5,3.3V CL130ALMR 1.2/3.3V Note: Left edge of box is start of pilot production. 23
24 Silicon Verification Vehicle Multi-project design and IP verification service Typical test chip size (5mm x 5mm ) Customer A Customer B Customer E Test Devices and Structures Customer C Customer D Customer F IP 1 IP 3 IP 2 IP 4 24
25 Why SilTerra? Proven Leading Foundry Matched Process Leader in HV CMOS Technology Complete Foundry Design Ecosystem First Time Proto Success High Yielding Wafers Cost Competitiveness Turnkey Service (Design to Backend) 25
26 Contact Information Corporate HQ Kulim Hi-Tech Park Malaysia T: KL Office Bandar Utama Malaysia T: U.S. Office San Jose, CA. USA T: Taiwan Office HsinChu City Taiwan T:
27 Corporate Location Corporate headquarters and manufacturing facility are strategically located in KHTP, Malaysia. Kulim High Tech Park 30km from Penang No typhoons and geologically stable Access to highly educated technical labor force Current tenants include Intel, First Solar, BASF Infineon, Celestica, Fuji Electric, Hoya, MEMC, Toyo Memory, Asyst, Novellus and others High quality infrastructure Reliable power supply Malaysian Cybercity status High capacity fiber optic network Abundant water supply from 3 dedicated reservoirs 27
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