Bluetooth 2.4-GHz Power Amplifier T7023
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1 Features Single 3-V Supply Voltage High Power-added Efficient Power Amplifier (P out Typically 23 dbm) Ramp-controlled Output Power Current-saving Standby Mode Few External Components HP-VFQFP-N16 Package Electrostatic sensitive device. Observe precautions for handling. Description The T723 is a monolithic SiGe power amplifier. It is especially designed for operation in TDMA systems like Bluetooth and WDCT. Due to the ramp-control feature and a very low quiescent current, an external switch transistor for V S is not required. Bluetooth 2.4-GHz Power Amplifier T723 Figure 1. Block Diagram PA_IN Ramp SiGe PA T723 Rev. 1
2 Pin Configuration Figure 2. Pinning HP-VFQFP-N16 Ramp PA_IN Pin Description Pin Symbol Function 1 Ground 2 PA_IN Power amplifier input 3 Ground 4 Ground 5 Ground 6 V3_PA_OUT Inductor to power supply and matching network for power amplifier output 7 V3_PA_OUT Inductor to power supply and matching network for power amplifier output 8 V3_PA_OUT Inductor to power supply and matching network for power amplifier output 9 Ground 1 Ground 11 RAMP Power ramping control input 12 Ground 13 V2_PA Inductor to power supply for power amplifier 14 V2_PA Inductor to power supply for power amplifier 15 Ground 16 V1_PA Supply voltage for power amplifier Slug Ground 2 T723
3 T723 Absolute Maximum Ratings All voltages are referred to ground (Pins and slug), no RF Parameters Symbol Value Unit Supply voltage Pins V1_PA, V2_PA and V3_PA_OUT V S 6 V Junction temperature T j 15 C Storage temperature T stg -4 to +125 C RF input power PA P inpa 1 dbm dbm Thermal Resistance Parameters Symbol Value Unit Junction ambient HP-VFQFP-N16, Slug soldered on pcb R thja 4 K/W Operating Range All voltages are referred to ground (Pins and slug). Power supply points are V1_PA, V2_PA, V3_PA_OUT. The following table represents the sum of all supply currents depending on the TX mode. Parameters Symbol Min. Typ. Max. Unit Supply voltage Pins V1_PA, V2_PA and V3_PA_OUT V S V Supply current I S 165 ma Standby current I S_standby 1 µa Ambient temperature T amb C 3
4 Electrical Characteristics Test conditions (unless otherwise specified): V S = 3. V, T amb = 25 C Parameters Test Conditions Symbol Min. Typ. Max. Unit Power Amplifier (1) Supply voltage Pins V1_PA, V2_PA and V3_PA_OUT V S V Supply current TX I S_TX 165 ma Standby I S_standby 1 µa Frequency range TX f GHz Gain-control range TX Gp 6 42 db Power gain maximum Power gain minimum Ramping voltage maximum Ramping voltage minimum TX Pin PA_IN to V3_PA_OUT TX Pin PA_IN to V3_PA_OUT TX, power gain (maximum) Pin RAMP TX, power gain (minimum) Pin RAMP Gp db Gp db V RAMP max V V RAMP min.1 V Ramping current maximum V = 1.75 V.5 ma Power-added efficiency TX PAE % Saturated output power TX, input power = dbm referred to Pins V3_PA_OUT P sat dbm Input matching (2) TX, Pin PA_IN Load VSWR <1.5:1 Output matching (2) TX, Pin V3_PA_OUT Load VSWR <1.5:1 Harmonics at P sat = 23 dbm Harmonics at P sat = 23 dbm Notes: TX, Pin V3_PA_OUT TX, Pin V3_PA_OUT 2 f o -3 dbc 3 f o -3 dbc 1. Power amplifier shall be unconditionally stable, maximum duty cycle 1%, true CW operation, maximum load mismatch and duration: VSWR 1:1 (all phases) 1 s, Z G = With external matching network, load impedance 5 4 T723
5 T723 Typical Operating Characteristics Figure 3. Output Power and PAE versus Supply Voltage PAE 22 I_S_TX Pout 16 1 f = 2.4 GHz V ramp = 1.8 V P inpa = dbm Supply Voltage (V) Figure 4. Output Power and PAE versus Frequency PAE 2 3 I_S_TX Pout V S = 3 V V ramp = 1.8 V P inpa = dbm Frequency (MHz) Figure 5. Output Power and PAE versus Ramp Voltage 5 PAE 25 3 Pout I_S_TX f = 2.4 GHz V S = 3 V P inpa = dbm V ramp (V) 5
6 Figure 6. Output Power and PAE versus Input Power 4 Gain PAE I_S Pout V S = 3 V V ramp = 1.7 V P inpa = dbm Input Power (dbm) Figure 7. P out versus V ramp and Temperature 3 2 f = 2.4 GHz V S = 3 V P in = dbm C V ramp (V) 6 T723
7 T723 Figure 8. Output Power versus I Ramp Current C C 8 C 4 C I ramp ( A) Figure 9. I S_TX versus V Ramp Current C C 4 C C I ramp ( A) 7
8 Input/Output Circuits Figure 1. Input Circuit PA_IN/V1_PA V1_PA PA_IN Figure 11. Input Circuit RAMP/V1_PA V1_PA RAMP Figure 12. Input Circuit V2_PA V2_PA 8 T723
9 T723 Figure 13. Input/Output Circuit V3_PA_OUT V3_PA_OUT Figure 14. Application Board Schematic PA IN V1_PA 1p5 5p T p3 5p6 V2_PA Ramp harm. termination 1p5 15n H V3_PA PA OUT blocking capacitors depending on application 9
10 Ordering Information Extended Type Number Package Remarks T723-PES HP-VFQFP-N16 Tube T723-PEQ HP-VFQFP-N16 Taped and reeled Package Information 1 T723
11 Atmel Headquarters Corporate Headquarters 2325 Orchard Parkway San Jose, CA TEL 1(48) FAX 1(48) Europe Atmel Sarl Route des Arsenaux 41 Case Postale 8 CH-175 Fribourg Switzerland TEL (41) FAX (41) Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimhatsui East Kowloon Hong Kong TEL (852) FAX (852) Japan 9F, Tonetsu Shinkawa Bldg Shinkawa Chuo-ku, Tokyo Japan TEL (81) FAX (81) Atmel Operations Memory 2325 Orchard Parkway San Jose, CA TEL 1(48) FAX 1(48) Microcontrollers 2325 Orchard Parkway San Jose, CA TEL 1(48) FAX 1(48) La Chantrerie BP Nantes Cedex 3, France TEL (33) FAX (33) ASIC/ASSP/Smart Cards Zone Industrielle 1316 Rousset Cedex, France TEL (33) FAX (33) East Cheyenne Mtn. Blvd. Colorado Springs, CO 896 TEL 1(719) FAX 1(719) Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 QR, Scotland TEL (44) FAX (44) RF/Automotive Theresienstrasse 2 Postfach Heilbronn, Germany TEL (49) FAX (49) East Cheyenne Mtn. Blvd. Colorado Springs, CO 896 TEL 1(719) FAX 1(719) Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP Saint-Egreve Cedex, France TEL (33) FAX (33) literature@atmel.com Web Site Atmel Corporation 23. Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company s standard warranty which is detailed in Atmel s Terms and Conditions located on the Company s web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel s products are not authorized for use as critical components in life support devices or systems. Atmel is the registered trademark of Atmel. The Bluetooth name and the Bluetooth trademarks are owned by Bluetooth SIG, Inc, and are used by Atmel Corporation under license. Other terms and product names may be the trademarks of others. Printed on recycled paper. xm
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