TC55. 1 µa Low Dropout Positive Voltage Regulator. General Description. Features. Functional Block Diagram. Applications.

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1 M 1 µa Low Dropout Positive Regulator TC Features Low Dropout : 120 mv (typ) at 100 ma, 80 mv (typ) at 200 ma High Output Current: 20 ma (V OUT =.0V) High Accuracy Output : ±2% (max) (±1% Semi-Custom Version) Low Power Consumption: 1.1 µa (typ) Low Temperature Drift: ±100 ppm/ C (typ) Excellent Line Regulation: 0.2%/V (typ) Package Options: -Pin SOT-2A, -Pin SOT-89 and -Pin TO-92 Short-Circuit Protection Standard Output Options: 1.2V, 1.8V, 2.V,.0V,.V,.0V Applications Battery-Powered Devices Cameras and Portable Video Equipment Pagers and Cellular Phones Solar Powered Instruments Consumer Products Package Types -Pin SOT-2A V IN -Pin SOT-89 V IN General Description The TC Series is a collection of CMOS low dropout, positive voltage regulators that can source up to 20 ma of current, with an extremely low input-output voltage differential of 80 mv (typ) at 200 ma. The TC s low dropout voltage, combined with the low current consumption of only 1.1 µa (typ), makes it ideal for battery operation. The low voltage differential (dropout voltage) extends the battery operating lifetime. It also permits high currents in small packages when operated with minimum V IN V OUT differentials. The circuit also incorporates short-circuit protection to ensure maximum reliability. Functional Block Diagram V IN Short-Circuit Protection Reference GND + V OUT TC 1 2 GND V OUT -Pin TO-92 TC 1 2 GND V IN V OUT 12 Bottom View GND V IN V OUT Note: -Pin SOT-2A is equivalent to the EIAJ SC Microchip Technology Inc. DS214E-page 1

2 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Input...+12V Output Current (Continuous)... P D /(V IN V OUT )ma Output Current (peak) ma Output... (V SS 0.V) to (V IN + 0.V) Continuous Power Dissipation: -Pin SOT-2A mw -Pin SOT mw -Pin TO mw TCRP0: ELECTRICAL CHARACTERISTICS TCRP40: ELECTRICAL CHARACTERISTICS Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. PIN FUNCTION TABLE Symbol GND V OUT V IN Electrical Specifications: Unless otherwise specified, V OUT (S) =.0V, T A = +2 C (see Note 1). Description Ground Terminal Regulated Output Unregulated Supply Input Parameters Sym Min Typ Max Units Conditions Output V OUT (A) V I OUT = 40 ma V IN = 6.0V Maximum Output Current I OUTMAX 20 ma V IN = 6.0V, V OUT (A) 4.V Load Regulation V OUT mv V IN = 6.0V, 1 ma I OUT 100 ma I/O Difference V DIF mv I OUT = 100 ma I OUT = 200 ma Current Consumption I SS µa V IN = 6.0V Regulation V OUT (A) %/V I OUT = 40 ma, 6.0V V IN 10.0V V IN V OUT (S) Input V IN 10 V Temperature Coefficient of Output V OUT (A) 10 6 ±100 ppm/ C I OUT = 40 ma, -40 C T A +8 C V OUT (S) T A Long-Term Stability 0. % T A = +12 C, 1000 Hours Note 1: V OUT (S): Preset value of output voltage; V OUT (A): Actual value of output voltage; V DIF : Definition of I/O voltage difference = {V IN 1 V OUT (A)}; V OUT (A): Output voltage when I OUT is fixed and V IN = V OUT (S) + 1.0V; V IN 1: Input voltage when the output voltage is 98% V OUT (A). Electrical Specifications: Unless otherwise specified, V OUT (S) = 4.0V, T A = +2 C (see Note 1). Parameters Sym Min Typ Max Units Conditions Output V OUT (A) V I OUT = 40 ma V IN =.0V Maximum Output Current I OUTMAX 200 ma V IN =.0V, V OUT (A).6V Load Regulation V OUT 4 90 mv V IN =.0V, 1 ma I OUT 100 ma I/O Difference V DIF mv I OUT = 100 ma I OUT = 200 ma Current Consumption I SS µa V IN =.0V Regulation V OUT (A) %/V I OUT = 40 ma,.0v V IN 10.0V V IN V OUT (S) Input V IN 10 V Temperature Coefficient of Output V OUT (A) 10 6 ±100 ppm/ C I OUT = 40 ma, -40 C T A +8 C V OUT (S) T A Long-Term Stability 0. % T A = +12 C, 1000 Hours Note 1: V OUT (S): Preset value of output voltage; V OUT (A): Actual value of output voltage; V DIF : Definition of I/O voltage difference = {V IN 1 V OUT (A)}; V OUT (A): Output voltage when I OUT is fixed and V IN = V OUT (S) + 1.0V; V IN 1: Input voltage when the output voltage is 98% V OUT (A). DS214E-page Microchip Technology Inc.

3 TCRP: ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise specified, V OUT (S) =.V, T A = +2 C (see Note 1). Parameters Sym Min Typ Max Units Conditions Output V OUT (A).2.0 TCRP0: ELECTRICAL CHARACTERISTICS.7 V I OUT = 40 ma V IN = 4.V Maximum Output Current I OUTMAX 10 ma V IN = 4.V, V OUT (A).0V Load Regulation V OUT 4 90 mv V IN = 4.V, 1mA I OUT 80 ma I/O Difference V DIF mv I OUT = 80 ma I OUT = 160 ma T +8 C Current Consumption I SS µa V IN = 4.V Regulation V OUT (A) 100 V IN V OUT (S) %/V I OUT = 40 ma, 4.V I OUT 10.0V Input V IN 10 V Temperature Coefficient of Output V OUT (A) 10 6 ±100 ppm/ C I OUT = 40 ma, -40 C V OUT (S) T A A Long-Term Stability 0. % T A = +12 C, 1,000 Hours Note 1: V OUT (S): Preset value of output voltage; V OUT (A): Actual value of output voltage; V DIF : Definition of I/O voltage difference = {V IN 1 V OUT (A)}; V OUT (A): Output voltage when I OUT is fixed and V IN = V OUT (S) + 1.0V; V IN 1: Input voltage when the output voltage is 98% V OUT (A). Electrical Specifications: Unless otherwise specified, V OUT (S) =.0V, T A = +2 C (see Note 1). Parameters Sym Min Typ Max Units Conditions Output V OUT (A) V I OUT = 40 ma V IN = 4.0V Maximum Output Current I OUTMAX 10 ma V IN = 4.0V, V OUT (A) 2.7V Load Regulation V OUT 4 90 mv V IN = 4.0V, 1 ma I OUT 80 ma I/O Difference V DIF mv I OUT = 80 ma I OUT = 160 ma Current Consumption I SS µa V IN = 4.0V Regulation V OUT (A) %/V I OUT = 40 ma, 4.0V V IN 10.0V V IN V OUT (S) Input V IN 10 V Temperature Coefficient of Output V OUT (A) 10 6 ±100 ppm/ C I OUT = 40 ma, -40 C T A +8 C V OUT (S) T A Long-Term Stability 0. % T A = +12 C, 1000 Hours Note 1: V OUT (S): Preset value of output voltage; V OUT (A): Actual value of output voltage; V DIF : Definition of I/O voltage difference = {V IN 1 V OUT (A)}; V OUT (A): Output voltage when I OUT is fixed and V IN = V OUT (S) + 1.0V; V IN 1: Input voltage when the output voltage is 98% V OUT (A). 200 Microchip Technology Inc. DS214E-page

4 TCRP2: ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise specified, V OUT (S) = 2.V, T A = +2 C (see Note 1). Parameters Sym Min Typ Max Units Conditions Output V OUT (A) TCRP18: ELECTRICAL CHARACTERISTICS 2. V I OUT = 40 ma V IN =.V Maximum Output Current I OUTMAX 12 ma V IN =.V, V OUT (A) 2.2V Load Regulation V OUT 4 90 mv V IN =.V, 1mA I OUT 60 ma I/O Difference V DIF mv I OUT = 60 ma I OUT = 120 ma T +80 C Current Consumption I SS µa V IN =.V Regulation V OUT (A) 100 V IN V OUT (S) %/V I OUT = 40 ma,.v I OUT 10.0V Input V IN 10 V Temperature Coefficient of Output V OUT (A) 10 6 ±100 ppm/ C I OUT = 40 ma, -0 C V OUT (S) T A A Long-Term Stability 0. % T A = +12 C, 1,000 Hours Note 1: V OUT (S): Preset value of output voltage; V OUT (A): Actual value of output voltage; V DIF : Definition of I/O voltage difference = {V IN 1 V OUT (A)}; V OUT (A): Output voltage when I OUT is fixed and V IN = V OUT (S) + 1.0V; V IN 1: Input voltage when the output voltage is 98% V OUT (A). Electrical Specifications: Unless otherwise specified, V OUT (S) = 1.8V, T A = +2 C (see Note 1). Parameters Sym Min Typ Max Units Conditions Output V OUT (A) V I OUT = 0. ma V IN = 2.8V +80 C Maximum Output Current I OUTMAX 110 ma V IN = 2.8V, V OUT (A) 1.62V Load Regulation V OUT 0 mv V IN = 2.8V, 1mA I OUT 0 ma I/O Difference V DIF 00 mv I OUT = 0. ma Current Consumption I SS.0 µa V IN = 2.8V Regulation V OUT (A) 100 V IN V OUT (S) 0.2 %/V I OUT = 0. ma, 2.8V I OUT 10.0V Input V IN 6.0 V Temperature Coefficient of Output V OUT (A) 10 6 ±100 ppm/ C I OUT = 0. ma, -0 C T A V OUT (S) T A Long-Term Stability 0. % T A = +12 C, 1,000 Hours Note 1: V OUT (S): Preset value of output voltage; V OUT (A): Actual value of output voltage; V DIF : Definition of I/O voltage difference = {V IN 1 V OUT (A)}; V OUT (A): Output voltage when I OUT is fixed and V IN = V OUT (S) + 1.0V; V IN 1: Input voltage when the output voltage is 98% V OUT (A). DS214E-page Microchip Technology Inc.

5 TCRP12: ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise specified, V OUT (S) = 1.2V, T A = +2 C (see Note 1). Parameters Sym Min Typ Max Units Conditions Output V OUT (A) TEMPERATURE CHARACTERISTICS V I OUT = 0. ma V IN = 2.2V +80 C Maximum Output Current I OUTMAX 0 ma V IN = 2.2V, V OUT (A) 1.08V Load Regulation V OUT 0 mv V IN = 2.2V, 1mA I OUT 0 ma I/O Difference V DIF 00 mv I OUT = 0. ma Current Consumption I SS.0 µa V IN = 2.2V Regulation V OUT (A) 100 V IN V OUT (S) 0.2 %/V I OUT = 0., 2.2V I OUT 10.0V Input V IN 6.0 V Temperature Coefficient of Output V OUT (A) 10 6 ±100 ppm/ C I OUT = 0. ma, -0 C T A V OUT (S) T A Long-Term Stability 0. % T A = +12 C, 1,000 Hours Note 1: V OUT (S): Preset value of output voltage; V OUT (A): Actual value of output voltage; V DIF : Definition of I/O voltage difference = {V IN 1 V OUT (A)}; V OUT (A): Output voltage when I OUT is fixed and V IN = V OUT (S) + 1.0V; V IN 1: Input voltage when the output voltage is 98% V OUT (A). Electrical Specifications: Unless otherwise specified, V OUT (S) =.0V, T A = +2 C. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range (E) T A ºC Storage Temperature Range T A ºC Package Thermal Resistances Thermal Resistance, L-SOT-2A θ JA 9 ºC/W Thermal Resistance, L-SOT-89 θ JA 110 ºC/W When mounted on 1 square inch of copper Thermal Resistance, L-TO-92 θ JA 11.9 ºC/W 200 Microchip Technology Inc. DS214E-page

6 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Notes: Unless otherwise specified, V OUT (S) =.0V,.0V, T A = +2 C, C IN = 1 µf Tantalum, C OUT = 1 µf Tantalum. V IN = 4.0V C 80 C C OUTPUT CURRENT I OUT (ma) FIGURE 2-1: Output vs. Output Current (TCRP002). T OPR = 2 C I OUT = 1 ma 40 ma 10 ma.0. INPUT VOLTAGE V IN (V) FIGURE 2-2: Output vs. Input (TCRP002). T OPR = 2 C I OUT = 1 ma INPUT VOLTAGE V IN (V) FIGURE 2-: Output vs. Input (TCRP002). DROPOUT VOLTAGE VDIF (V) C C -0 C OUTPUT CURRENT I OUT (ma) FIGURE 2-4: Dropout vs. Output Current (TCRP002) V IN = 4.0V I OUT = 10 ma ma OPERATING TEMPERATURE ( C) FIGURE 2-: Output vs. Operating Temperature (TCRP002). SUPPLY CURRENT I SS (µa) T OPR = 2 C INPUT VOLTAGE V IN (V) FIGURE 2-6: Supply Current vs. Input (TCRP002). DS214E-page Microchip Technology Inc.

7 Note: Unless otherwise indicated, V OUT (S) =.0V,.0V, T A = +2 C, C IN = 1 µf Tantalum, C OUT = 1 µf Tantalum. SUPPLY CURRENT I SS (µa) V IN = 4.0V OPERATING TEMPERATURE ( C) FIGURE 2-7: Supply Current vs. Operating Temperature (TCRP002) Output Output Current 40 ma 1 ma TIME (2 msec/div) FIGURE 2-8: Load Transient Response (TCRP002). V IN = 6.0V C 80 C C OUTPUT CURRENT I OUT (ma) FIGURE 2-9: Output vs. Output Current (TCRP002). OUTPUT CURRENT I OUT (ma) I OUT = 1 ma 10 ma 40 ma INPUT VOLTAGE V IN (V) T OPR = 2 C.0. FIGURE 2-10: Output vs. Input (TCRP002) I OUT = 1 ma INPUT VOLTAGE V IN (V) T OPR = 2 C FIGURE 2-11: Output vs. Input (TCRP002). DROPOUT VOLTAGE VDIF (V) C C C OUTPUT CURRENT I OUT (ma) FIGURE 2-12: Dropout vs. Output Current (TCRP002). 200 Microchip Technology Inc. DS214E-page 7

8 Note: Unless otherwise indicated, V OUT (S) =.0V,.0V, T A = +2 C, C IN = 1 µf Tantalum, C OUT = 1 µf Tantalum. V IN = 6.0V I OUT = 10 ma ma OPERATING TEMPERATURE ( C) FIGURE 2-1: Output vs. Operating Temperature (TCRP002). SUPPLY CURRENT I SS (µa) T OPR = 2 C INPUT VOLTAGE V IN (V) FIGURE 2-14: Supply Current vs. Input (TCRP002). INPUT VOLTAGE V OUT (V) I OUT = 1 ma Input. Output TIME (msec) FIGURE 2-16: Input Transient Response, 1 ma (TCRP002). INPUT VOLTAGE V OUT (V) I OUT = 10 ma Input Output TIME (msec) FIGURE 2-17: Input Transient Response, 10 ma (TCRP002). OUTPUT VOLTAGE V IN (V) SUPPLY CURRENT I SS (µa) V IN = 6.0V OPERATING TEMPERATURE ( C) FIGURE 2-1: Supply Current vs. Operating Temperature (TCRP002) Output Output Current 40 ma 1 ma TIME (2 msec/div) FIGURE 2-18: Load Transient Response (TCRP002). OUTPUT CURRENT I OUT (ma) DS214E-page Microchip Technology Inc.

9 .0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table -1. TABLE -1: PIN FUNCTION TABLE Pin No. Symbol Description 1 GND Ground Terminal 2 V OUT Regulated Output V IN Unregulated Supply Input.1 Ground Terminal (GND) Regulator ground. Tie GND to the negative side of the output and the negative side of the input capacitor. Only the LDO bias current (1 µa typical) flows out of this pin, there is no high current. The LDO output regulation is referenced to this pin. Minimize voltage drops between this pin and the minus side of the load..2 Regulated Output (V OUT ) Connect V OUT to the positive side of the load and the positive terminal of the output capacitor. The positive side of the output capacitor should be physically located as close to the LDO V OUT pin as is practical. The current flowing out of this pin is equal to the DC load current. 4.0 DETAILED DESCRIPTION The TC is a low quiescent current, precision, fixedoutput voltage LDO. Unlike bipolar regulators, the TC supply current does not increase proportionally with load current. 4.1 Output Capacitor A minimum of 1 µf output capacitor is required. The output capacitor should have an effective series resistance (esr) greater than 0.1Ω and less than Ω, plus a resonant frequency above 1 MHz. Larger output capacitors can be used to improve supply noise rejection and transient response. Care should be taken when increasing C OUT to ensure that the input impedance is not high enough to cause high input impedance oscillation. 4.2 Input Capacitor A 1 µf input capacitor is recommended for most applications when the input impedance is on the order of 10Ω. Larger input capacitance may be required for stability when operating off of a battery input, or if there is a large distance from the input source to the LDO. When large values of output capacitance are used, the input capacitance should be increased to prevent high source impedance oscillations.. Unregulated Supply Input (V IN ) Connect the input supply voltage and the positive side of the input capacitor to V IN. The input capacitor should be physically located as close as is practical to V IN. The current flow into this pin is equal to the DC load current, plus the LDO bias current (1 µa typical.) 200 Microchip Technology Inc. DS214E-page 9

10 .0 THERMAL CONSIDERATIONS.1 Power Dissipation The amount of power dissipated internal to the low dropout linear regulator is the sum of the power dissipation within the linear pass device (P-Channel MOS- FET) and the quiescent current required to bias the internal reference and error amplifier. The internal linear pass device power dissipation is calculated by multiplying the voltage across the linear device by the current through the device. EQUATION The internal power dissipation, as a result of the bias current for the LDO internal reference and error amplifier, is calculated by multiplying the ground or quiescent current by the input voltage. EQUATION P D (Pass Device) = (V IN V OUT ) x I OUT P D (Bias) = V IN x I GND The total internal power dissipation is the sum of P D (Pass Device) and P D (Bias). EQUATION P TOTAL = P D (Pass Device) + P D (Bias) For the TC, the internal quiescent bias current is so low (1 µa typical) that the P D (Bias) term of the power dissipation equation can be ignored. The maximum power dissipation can be estimated by using the maximum input voltage and the minimum output voltage to obtain a maximum voltage differential between input and output. The next step would be to multiply the maximum voltage differential by the maximum output current. EQUATION P D = (V INMAX V OUTMIN ) x I OUTMAX Given: V IN =.V to 4.1V V OUT =.0 V ± 2% I OUT = 1 ma to 100 ma T AMAX = C P MAX = (4.1V (.0V x 0.98)) x 100 ma P MAX = milliwatts To determine the junction temperature of the device, the thermal resistance from junction-to-ambient must be known. The -pin SOT-2 thermal resistance from junction-to-air (R θja ) is estimated to be approximately 9 C/W. The SOT-89 R θja is estimated to be approximately 110 C/W when mounted on 1 square inch of copper. The TO-92 R θja is estimated to be 11.9 C/W. The R θja will vary with physical layout, airflow and other application-specific conditions. The device junction temperature is determined by calculating the junction temperature rise above ambient, then adding the rise to the ambient temperature. EQUATION Junction Temperature SOT-2 Example: T J = P DMAX x R θja + T A T J = milliwatts x 9 C/W + C T J = 96.6 C SOT-89 Example: T J = milliwatts x 110 C/W + C T J = 67.8 C TO-92 Example: T J = milliwatts x 11.9 C/W + C T J = 70. C DS214E-page Microchip Technology Inc.

11 6.0 PACKAGING INFORMATION 6.1 Package Marking Information -Pin SOT-2A -Pin SOT-89 -Pin TO represents first voltage digit 2V, V, 4V, V, 6V 1, 2, & 4 = RP (fixed) Ex:.xV = 2 represents first decimal place voltage (x.0 - x.9) Ex:.4V = E Symbol Symbol A x.0 F x. B x.1 H x.6 C x.2 K x.7 D x. L x.8 E x.4 M x.9 represents first voltage digit (2-6) 6 represents first voltage decimal (0-9) 7 represents extra feature code: fixed: 0 8 represents regulation accuracy 1 = ±1.0% (custom), 2 = ±2.0% (standard) 9, 10, 11 & 12 represents assembly lot number represents polarity 0 = Positive (fixed) 4 represents assembly lot number 200 Microchip Technology Inc. DS214E-page 11

12 -Lead Plastic Small Outline Transistor (CB) (SOT2) E E1 2 B n p p1 D 1 α c A A2 φ A1 β L Units Dimension Limits Number of Pins n Pitch p Outside lead pitch (basic) p1 Overall Height A Molded Package Thickness A2 Standoff A1 Overall Width E Molded Package Width E1 Overall Length D Foot Length L Foot Angle φ Lead Thickness c Lead Width B Mold Draft Angle Top α Mold Draft Angle Bottom β * Controlling Parameter Significant Characteristic MIN INCHES* NOM MAX MILLIMETERS MIN NOM Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed.010 (0.24mm) per side. JEDEC Equivalent: TO-26 Drawing No. C MAX DS214E-page Microchip Technology Inc.

13 -Lead Plastic Small Outline Transistor (MB) (SOT89) E H B1 B D D1 p1 2 p 1 B1 L E1 A Units INCHES MILLIMETERS* Dimension Limits MIN MAX MIN MAX Pitch p.09 BSC 1.0 BSC Outside lead pitch (basic) p1.118 BSC.00 BSC Overall Height A Overall Width H Molded Package Width at Base E Molded Package Width at Top E Overall Length D Tab Length D Foot Length L Lead Thickness c Lead 2 Width B Leads 1 & Width B *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed.00" (0.127mm) per side. JEDEC Equivalent: TO-24 Drawing No. C04-29 C 200 Microchip Technology Inc. DS214E-page 1

14 -Lead Plastic Transistor Outline (ZB) (TO-92) E1 D 1 n L 1 2 p B c α A R β Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n Pitch p Bottom to Package Flat A Overall Width E Overall Length D Molded Package Radius R Tip to Seating Plane L Lead Thickness c Lead Width B Mold Draft Angle Top α Mold Draft Angle Bottom β *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed.010 (0.24mm) per side. JEDEC Equivalent: TO-92 Drawing No. C DS214E-page Microchip Technology Inc.

15 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device XX Device: TC: 1 µa Low Dropout Positive Regulator Output : 12 = 1.2V "Standard" 18 = 1.8V "Standard" 2 = 2.V "Standard" 0 =.0V "Standard" =.V "Standard" 0 =.0V "Standard" Extra Feature Code: 0 = Fixed Tolerance: 1 = 1.0% (Custom) 2 = 2.0% (Standard) Temperature: E = -40 C to +8 C Package Type: CB = -Pin SOT-2A (equivalent to EIAJ SC-9) MB = -Pin SOT-89 ZB = -Pin TO-92 Taping Direction: TR = Standard 71 = Standard X X Output Feature Tolerance Temp. Package Taping Code Direction X XX XX Examples: a) TCRP1802ECB71: 1.8V LDO Positive Regulator, 2% Tolerance SOT2-A- package. b) TCRP202EMB71: 1.8V LDO Positive Regulator, 2% Tolerance. SOT89- package. c) TCRP202ECB71: 2.V LDO Positive Regulator, 2% Tolerance. SOT2-A- package. d) TCRP002ECB71:.0V LDO Positive Regulator, 2% Tolerance. SOT2-A- package. e) TCRP002EMB71:.0V LDO Positive Regulator, 2% Tolerance. SOT89- package. f) TCRP02ECB71:.V LDO Positive Regulator, 2% Tolerance. SOT2-A- package. g) TCRP02EMB71:.V LDO Positive Regulator, 2% Tolerance. SOT89- package. h) TCRP002ECB71:.0V LDO Positive Regulator, 2% Tolerance. SOT2-A- package. i) TCRP002EMB71:.0V LDO Positive Regulator, 2% Tolerance. SOT89- package. Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. Your local Microchip sales office 2. The Microchip Corporate Literature Center U.S. FAX: (480) The Microchip Worldwide Site ( Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site ( to receive the most current information on our products. 200 Microchip Technology Inc. DS214E-page 1

16 NOTES: DS214E-page Microchip Technology Inc.

17 Note the following details of the code protection feature on Microchip devices: Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as unbreakable. Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break microchip s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, KEELOQ, MPLAB, PIC, PICmicro, PICSTART, PRO MATE and PowerSmart are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, microid, MXDEV, MXLAB, PICMASTER, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Accuron, Application Maestro, dspic, dspicdem, dspicdem.net, ECONOMONITOR, FanSense, FlexROM, fuzzylab, In-Circuit Serial Programming, ICSP, ICEPIC, microport, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICC, PICkit, PICDEM, PICDEM.net, PowerCal, PowerInfo, PowerMate, PowerTool, rflab, rfpic, Select Mode, SmartSensor, SmartShunt, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. 200, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March The Company s quality system processes and procedures are QS-9000 compliant for its PICmicro 8-bit MCUs, KEELOQ code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip s quality system for the design and manufacture of development systems is ISO 9001 certified. 200 Microchip Technology Inc. DS214E-page 17

18 M WORLDWIDE SALES AND SERVICE AMERICAS Corporate Office 2 West Chandler Blvd. Chandler, AZ Tel: Fax: Technical Support: Web Address: Atlanta 780 Mansell Road, Suite 10 Alpharetta, GA 0022 Tel: Fax: Boston 2 Lan Drive, Suite 120 Westford, MA Tel: Fax: Chicago Pierce Road, Suite 180 Itasca, IL 6014 Tel: Fax: Dallas 470 Westgrove Drive, Suite 160 Addison, TX 7001 Tel: Fax: Detroit Tri-Atria Office Building 22 Northwestern Highway, Suite 190 Farmington Hills, MI 484 Tel: Fax: Kokomo 2767 S. Albright Road Kokomo, IN Tel: Fax: Los Angeles Von Karman, Suite 1090 Irvine, CA Tel: Fax: Phoenix 2 West Chandler Blvd. Chandler, AZ Tel: Fax: San Jose Microchip Technology Inc North First Street, Suite 90 San Jose, CA 911 Tel: Fax: Toronto 628 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X, Canada Tel: Fax: ASIA/PACIFIC Australia Microchip Technology Australia Pty Ltd Marketing Support Division Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: Fax: China - Beijing Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 91 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, , No. China Tel: Fax: China - Chengdu Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm , 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu , China Tel: Fax: China - Fuzhou Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 0001, China Tel: Fax: China - Hong Kong SAR Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 22 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: Fax: China - Shanghai Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 17 Xian Xia Road Shanghai, Tel: Fax: China - Shenzhen Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1812, 18/F, Building A, United Plaza No. 022 Binhe Road, Futian District Shenzhen 180, China Tel: Fax: China - Qingdao Rm. B0A, Fullhope Plaza, No. 12 Hong Kong Central Rd. Qingdao , China Tel: Fax: India Microchip Technology Inc. India Liaison Office Marketing Support Division Divyasree Chambers 1 Floor, Wing A (A/A4) No. 11, O Shaugnessey Road Bangalore, 60 02, India Tel: Fax: Japan Microchip Technology Japan K.K. Benex S-1 6F , Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, , Japan Tel: Fax: Korea Microchip Technology Korea 168-1, Youngbo Bldg. Floor Samsung-Dong, Kangnam-Ku Seoul, Korea Tel: Fax: Singapore Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, Tel: Fax: Taiwan Microchip Technology (Barbados) Inc., Taiwan Branch 11F-, No. 207 Tung Hua North Road Taipei, 10, Taiwan Tel: Fax: EUROPE Austria Microchip Technology Austria GmbH Durisolstrasse 2 A-4600 Wels Austria Tel: Fax: Denmark Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1- Ballerup DK-270 Denmark Tel: Fax: France Microchip Technology SARL Parc d Activite du Moulin de Massy 4 Rue du Saule Trapu Batiment A - ler Etage 9100 Massy, France Tel: Fax: Germany Microchip Technology GmbH Steinheilstrasse 10 D-877 Ismaning, Germany Tel: Fax: Italy Microchip Technology SRL Via Quasimodo, Legnano (MI) Milan, Italy Tel: Fax: United Kingdom Microchip Ltd. 0 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 TU Tel: Fax: /0/0 DS214E-page Microchip Technology Inc.