New Directions in Memory Architecture June 12, 2014

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1 New irections in Memory rchitecture June 12, 2014 Bob Brennan, enior Vice President Memory olutions ab

2 egal isclaimer This presentation is intended to provide information concerning memory industry trends. We do our best to make sure that information presented is accurate and fully up-to-date. owever, the presentation may be subject to technical inaccuracies, information that is not up-to-date or typographical errors. s a consequence, amsung does not in any way guarantee the accuracy or completeness of information provided on this presentation. amsung reserves the right to make improvements, corrections and/or changes to this presentation at any time. The information in this presentation or accompanying oral statements may include forward-looking statements. These forward-looking statements include all matters that are not historical facts, statements regarding the amsung Electronics' intentions, beliefs or current expectations concerning, among other things, market prospects, growth, strategies, and the industry in which amsung operates. By their nature, forward-looking statements involve risks and uncertainties, because they relate to events and depend on circumstances that may or may not occur in the future. amsung cautions you that forward looking statements are not guarantees of future performance and that the actual developments of amsung, the market, or industry in which amsung operates may differ materially from those made or suggested by the forward-looking statements contained in this presentation or in the accompanying oral statements. In addition, even if the information contained herein or the oral statements are shown to be accurate, those developments may not be indicative developments in future periods. amsung 2

3 genda» Environment BW & Capacity growth» M BW & Capacity -> Tiering» lash cales, Gets Intelligent, Tiers» New Persistent Performance amsung 3

4 Environment: Mobile & Cloud Information growth drivers over time Internet of everything! 2012: Mobile connected devices exceeded the world's population amsung 4

5 Environment: atacenter Infrastructure More applications for data ata traffic: 78% CG * 1000 PB: 1EB (10 18 ) Billions of evices! More video is uploaded to YouTube in one month than the 3 major U networks created in 60 years ource: Cisco Visual Networking Index What about Exabytes? 5 EB: Total data created between the dawn of civilization and 2003 amsung 5

6 EXBYTE VMs per ost Environment: Escalating emand for M and torage In-Memory nalytics for Big ata Growing x86 erver Virtualization ensity orecast % of Installed Workloads unning VM ensity in a VM per ost erver Unstructured ata tructured ata ource: EMC and IC ource: Gartner and IC Escalating Memory-Intensive Workloads ata Center Processor Growth PC Graphics 2x Volume Growth inancial Gaming Big ata ource: Intel amsung 6

7 Environment Bandwidth emand isplay Camera Video N-screen (1920x1080) 13MP 1080p -... U (3840x2160) 20+MP 4K U Memory Bandwidth equirements Now 7.5x (~100GB/s) x (~1.4TB/s) U TV 400~600 Mbps 10~20GB/s 3.7x (~1.6Gbps) 12.5x (~5.3Gbps) Peta-flops 20Peta-flops Exa-flops GB/s/node Gb/s/pin [ource: Memory systems for Petalop to Exalop class machines by IBM, 2007 & 2010] Mobile: isplay/gx/camera Exponential Bandwidth emand erver: Core caling inear to Exponential Bandwidth emand amsung 7

8 Environment Capacity emand 1GB 2GB 3GB 4GB 100~200TB 2~4GB Memory Capacity equirements Peta-flops 20Peta-flops Exa-flops Memory Capacity/ystem Now >5x (~750TB) >4x (~16GB) 2018 >70x (~10PB) >32x (~128GB) Memory Capacity/Node [ource: Memory systems for Petalop to Exalop class machines by IBM, 2007 & 2010] Mobile: isplay/gx/camera ~inear Capacity emand erver: Core caling inear - Exponential Capacity emand amsung 8

9 genda» Environment BW & Capacity growth» M BW & Capacity -> Tiering» lash cales, Gets Intelligent, Tiers» New Persistent Performance amsung 9

10 The Trade-off Triangles Bandwidth IOPs Power Power atency Capacity Endurance Capacity M Non-Volatile amsung 10

11 Bandwi dth Power M: Bandwidth caling atenc y Capacit y [Mbps] 4200 ubject to cost/energy efficiency, scaling, 3600 Optical (?) / (?) & New I/ (?) Wall? Multi-rop Bus Challenge: igher BW, ower V [Year] New olution Needed amsung 11

12 Cell T leakage Current Bandwi dth Power M: caling Challenges atenc y Capacit y W/ B/ 1 Plate efresh ifficult to build high-aspect ratio cell capacitors decreasing cell capacitance eakage current of cell access transistors increasing tw Contact resistance between the cell capacitor and access transistor increasing On-current of the cell access transistor decreasing Bit-line resistance increasing VT s cell capacitance shrinks, more frequent Time amsung Innovation needed to scale to 10nm & beyond 12

13 Bandwi dth Power M: atency Challenge atenc y Capacit y [tc, ns] 60 ubject to cost/energy efficiency, scaling, ~Constant ow atency Needed [Year] amsung isruptive olution Needed 13

14 M: Go Wide for Bandwidth ITEM Mobile WIO2 BM (igh B/W Memory) M Base die + M WIO2 P i Interposer GPU PKG PCB BM Base Pin #Bump Bottom die N/ Buffering & ignal re-routing BW (GB/s) 25.6~ ~256 peed 0.4~0.8 Gbps 1~2 Gbps # I/O 512 1,024 ogic 1~2K 6K~8K M 1~2K ~3K Cube (GB) 1 / 2 1 / 2 / 4 # TV stack 1 / 2 / 4 1 / 2 / 4 M density 8Gb 8Gb pplica tion GX card UT - PC - erver - (Cache) Mobile - Bandwi dth Power amsung atenc y Good BW & atency till Need Capacity Capacit y 14

15 M: ybrid Memory ystems Mobile erver OC CPU Tiered Memory Controller atency Bandwidth Power Capacity CPU CPU CPU CPUs CPU CPU Tiered Memory Controller WIO? WIO? WIO? igh BW M igh Bandwidth Tier 4 B M? P 4 P 4 P 4 P 4 igh Capacity Tier C M C M amsung Tiered Capacity, Tiered atency, T-M? 15

16 1 st tep: ystem Tiering M 16 igh Performance Tier igh Capacity Tier M M M amsung BM

17 genda» Environment BW & Capacity growth» M BW & Capacity -> Tiering» lash cales, Becomes Intelligent, Tiers» New Persistent Performance amsung 17

18 lash IOPs Power Endurance Capacity amsung 18

19 IOPs Power lash: Capacity caling Endur ance Capac ity 120nm 1Gb 90nm 2Gb 70nm 4Gb 60nm 8Gb 50nm 16Gb Cost of Patterning 40nm 32Gb 19nm 128Gb amsung caling Becomes ifficult Need a New olution 19

20 ow ec. Breakthrough: 128Gb V-NN - Vertical-NN Technology - Chip ize : 133mm Gb/mm 2 64Gb rray Plane-0 64Gb rray Plane-1-24-W tacked ayers - 64Gb rray 2-Plane - One-sided Page Buffer : (8KB x 2) Page ize Page Buffer Peripheral Circuits Page Buffer - synchronous Interface : Wave-pipeline datapath : 667Mbps at Mono ie : 533Mbps at 8-stacked ies amsung World s 1 st 3 V-NN Mass Production lash 20

21 V-NN rray tructure dvanced V-NN Technology with amascened Metal Gate Cell : ll-around Gate tructure + Charge Trap lash tring : 24-W + 2-W + 2-elect W Block : 8 trings with hared B (8KB) B<p> B<q> <7> <1> <0> ummy1 W23 Poly channel CT dielectrics W0 ummy0 Metal gate G C amsung 21

22 V-NN eatures Bits per Cell 2 ensity Technology 128Gb Three imensional Vertical NN, 3-metals Organization 8KB 384 pages 5464 blocks 8 Program Performance ata Interface peed Power upply 50MB/s for Embedded pp., 36MB/s for Enterprise Vcc=3.3V / Vccq=1.8V amsung

23 Conventional Ext.V Normalized (a.u.) Measured ctive Power Improves Over 50% ower Energy dvantage is achieved Increasing overall Performance by using 8-way Interleaving NN Operation 43% 54% 53% ICC1 (ead) ICC2 (Program) ICC3 (Erase) amsung 23

24 Normalized (a.u) Enterprise Comparison 512GB Ep- maller eal Estate Planar NN (8-ch, 8-way) 3 V-NN (8-ch, 4-way) 22% aster 20% aster 27% ower 45% ower igher Performance equential Write (MB/s) andom Write (IOP) verage Power (mw) Peak Power (mw) amsung 24

25 lash: caling Continues esign ule (nm) 2 Planar 3 V-NN / No Patterning imitation 8 stack 24 stack 16Gb 128Gb 1Tb 128Gb Year amsung Capacity, Endurance, Power 25

26 # of Cells Normalized (a.u.) Endur ance IOPs Power Capac ity NN lash Endurance lash: MC Endurance 36MB/s + 35K Endurance for ata-center & Enterprise pplications 50MB/s + 3K Endurance for Mobile pplications Planar 1xnm NN after 3K cycle vg. tpog=0.33ms (50MB/s) vg. tpog=0.45ms (36MB/s) 3 V-NN after 35K cycle Vth (a.u) Time [us] amsung Endurance improved dramatically 26

27 IOPs Power lash: Performance Endur ance Capac ity atency & IOP Interface & Performance ms >100x <0.3ms 7.2K PM 15K PM MB/s PCIe x4 T otational atency VG eek IOP Interface Unlocks Bandwidth: PCIeG2->G3->G4 olution needs to scale: Controllers, lgorithms, & lash Organization amsung Increasing Intelligence & ophistication 27

28 lash: Inherent Intelligence Intelligent IOPs IOPs Power Endurance Endurance Capacity 3 caling amsung 28

29 2 nd tep: ystem Tiering lash/s 29 igh Performance Tier igh Capacity Tier M M M Intelligent lash Tier amsung

30 Today s ack caling cknowledgement: Krishna Malladi. isclaimer: conceptual model only. CPU data on different scale. amsung lash ignificantly Improves the M-isk Gap 30

31 genda» Environment BW & Capacity growth» M BW & Capacity -> Tiering» lash cales, Becomes Intelligent, Tiers» New Persistent Performance amsung 31

32 atency (ns) Opportunity for New Technology 10,000,000 1,000,000 lash 100,000 10,000 1,000 Persistent Performance 100 M 10 C Bandwidth (GB/s) amsung 32

33 TT-MM etention tandby Power M TT-MM peed (/WT) Outer Better Tech. Maturity TT-MM Cell tructure Bit cost (calability) Endurance Promising Technology, Not Mature Yet amsung 33

34 Persistent Tiered Caching 3 rd tep: New possibilities 34 igh Performance Tier igh Capacity Tier M M M Intelligent lash Tier N E W N E W N E W N E W N E W N E W N E W N E W Persistent Performance, Byte addressable Intelligent lash Tier (PCIe) igher Performance Tier M M M N E W N E W N E W amsung Intelligent lash Tier ()

35 uture ack caling Vision cknowledgement: Krishna Malladi. isclaimer: conceptual model only. amsung Ideal caling: 1. V-NN 2. NMT 3. ystem W 35

36 Thank you! Questions: amsung 36

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