ACADEMIC BACKGROUND. Ph.D THESIS

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1 NGUYEN Thanh Tra 27 years old, Vietnamese, single UMR CNRS 6082 FOTON-OHM INSA de Rennes Tel : (+33) (0) Centralien Engineer, Ph.D student in Physics & Material Sciences ACADEMIC BACKGROUND 10/ /2013 Ph.D in Physics and Material sciences at INSA de Rennes (National institute of applied sciences). 10/2010 * Engineer Degree in Physics and Applications Master equivalent issued by Ecole Centrale de Paris (ECP). * Engineer Degree in Material sciences issued by Ho Chi Minh City University of Technology (HCMUT), program PFIEV. ECP is a highly-selective Grande Ecole admitting candidates holding a 2 years University background and training them in applied science and technology at the level of Master. The PFIEV (Programme de Formation d Ingénieurs d Excellence au Vietnam) trains excellence engineers in Vietnam, supported by a consortium of Grandes Ecoles and validated by the French Commission des Titres d Ingénieurs (CTI). 09/ /2010 Last 2 years engineering student HCMUT, program PFIEV. 09/ /2008 Ecole Centrale de Paris Double Engineer Diploma program. 09/ /2006 First 2 years engineering student HCMUT PFIEV. Ph.D THESIS Thesis title: PHOTONICS ON SILICON BASED ON EPITAXIAL GROWTH OF III-V NANOSTRUCTURES ON SILICON Work done at: UMR CNRS 6082 FOTON équipe OHM (Optoélectronique, Hétéroépitaxie et Matériaux) Département Matériaux et Nanotechnologies INSA de Rennes (National Institute of Applied Science in Rennes) RENNES, France. Thesis supervisors: Prof. Olivier DURAND Département Matériaux et Nanotechnologies Tel : +33 (0) Dr. Charles CORNET Département Matériaux et Nanotechnologies Tel : +33 (0)

2 PROFESSIONAL EXPERIENCES (3 years) - Laboratory FOTON (Rennes, France): Involvement in ANR (the French National Research Agency) contractual projects: SINPHONIC: SIlicoN PHOtonics with diluted NItride Coherent integration OPTOSI: Epitaxial integration of III-V OPTOelectronic devices on SIlicon Experimental skills: [III-V MBE] Growth of III-V nanostructures on GaP substrate (dilute nitride GaPN, InGaAs(N) quantum dots) and GaP on Si substrate using Riber solid source MBE apparatus. [UHV-CVD Silicon] Homoepitaxial growth of Si on Si substrates with different miscut angle, using UHV-CVD (Riber) and Silane as precursor. [Clean room] Chemical cleaning of Si wafers for defect-free growth of Si on Si. [RHEED, mass spectrometer] In-situ characterization by RHEED: surface reconstruction, surface roughness and growth rate, monitoring of species in the growth chamber using mass spectrometer. [AFM] Surface characterization using Veeco AFM apparatus in contact and tapping mode. [XRD, XRR, pole figure, RSM, Synchrotron] Structural characterization of thin films by X-ray scattering techniques: X-ray diffraction, X-ray reflectometry, pole figure and reciprocal space mapping. 2 campaigns of XRD experiments at ESRF (Grenoble, France), 5 days per campaign (Nov and Nov. 2012). Working on defects analysis of GaP thin films on silicon substrates. Teaching assistant (monitorat): practical courses for undergraduate students (acoustic wave, interference and diffraction of Hertzian wave, electromagnetism, hyper frequency, wave propagation in coaxial cable, light polarization, birefringence, LED: light emission and detection, and hologram) (5 months) - training period CEA-Leti (Grenoble, France): Development of encapsulation (in silicone) and integration of phosphors on white LEDs Chip-on-Board modules. Study of light extraction and colorimetry to maximize the performance and optimize the color rendering. Modelisation and simulation of LED module using SolidWorks and TracePro (2 months) - internship SRETT (Paris, France): Programming of a web interface to graphically follow the real-time evolution of environmental parameters (pressure, temperature, light, humidity) for Orbitrack system (machine to machine communication system based on ultra low power consumption RFID tags developed by SRETT), using PHP, Ajax and MySQL. INFORMATICS SKILLS & FOREIGN LANGUAGES Informatics skills Programming language: Python (frequently use), C, Java (beginner) Software: ORIGIN, COMSOL Multiphysics, SolidWorks, TracePro, MS Office Internet knowledge: PHP, Ajax, MySQL, Joomla, Wordpress (frequently use) Operating system: Windows, Linux (OpenSUSE, Debian, Ubuntu)

3 Foreign languages Vietnamese: mother tongue French: bilingual proficiency (Higher Diploma in French Language and Culture - Level C1 of the European Council, issued by the French Alliance, Paris (2008)) English: working proficiency (TOEFL 507 in 2008) ADDITIONAL INFORMATION President of the Association of Vietnamese students in Rennes (France) in 2012 (about 300 members). Production Manager of the VideoLAN Club at Ecole Centrale de Paris (broadcast television channels (TNT and satellite) through the Ethernet network to serve the 1,500 students in the campus ). Sport: martial arts, badminton. 1. Prof. Olivier DURAND Département Matériaux et Nanotechnologies, INSA Rennes Tel: +33 (0) REFERENCES 2. Dr. Charles CORNET Département Matériaux et Nanotechnologies, INSA Rennes Tel: +33 (0) Prof. Michel JOUAN Laboratoire SPMS Ecole Centrale de Paris Grande Voie des Vignes, F Châtenay-Malabry, France Tel: +33 (0) Dr. Nathalie BOUDET Institut Néel CNRS/UJF UPR rue des Martyrs BP Dr. Adrien GASSE DOPT/STM/LPA CEA-LETI, MINATEC CEA Grenoble, 17 rue des Martyrs Grenoble Cedex 9, France Tel : +33 (0) Grenoble Cedex 9, France Tel : +33 (0) RESEARCH PUBLICATIONS [1] S. Almosni, C. Robert, T. Nguyen Thanh, C. Cornet, A. Létoublon, T. Quinci, C. Levallois, M. Perrin, J. Kuyyalil, L. Pedesseau, A. Balocchi, P. Barate, J. Even, J.-M. Jancu, N. Bertru, X. Marie, O. Durand and A. Le-Corre, Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells Journal of Applied Physics, vol. 113, p , [2] O. Durand, C. Robert, T. Nguyen Thanh, S. Almosni, T. Quinci, J. Kuyyalil, C. Cornet, A. Létoublon, C. Levallois, J.-M. Jancu, J. Even, L. Pédesseau, M. Perrin, N. Bertru, A. Sakri, N. Boudet, A. Ponchet, P. Rale, L. Lombez, J.-F. Guillemoles, X. Marie, A. Balocchi, P. Turban, S. Tricot, Mircea Modreanu, S. Loualiche and A. Le Corre, Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, (February 4, 2013);

4 [3] C. Cornet, T. Nguyen Thanh, T. Quinci, S. Almosni, T. Rohel, J. Kuyyalil, A. Rambaud, A. Létoublon, N. Bertru, O. Durand and A. Le Corre, Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys Applied Physics Letters, vol. 101, p , [4] C. Robert, T. Nguyen Thanh, C. Cornet, P. Turban, M. Perrin, A. Balocchi, H. Folliot, N. Bertru, L. Pedesseau, M.O. Nestoklon, J. Even, J.M. Jancu, S. Tricot, O. Durand, X. Marie and A. Le Corre, Theoretical and experimental studies of (In,Ga)As/GaP quantum dots Nanoscale Research Letters, vol. 7, p. 643, [5] C. Robert, T. Nguyen Thanh, M. Perrin, C. Cornet, A. Létoublon, J.-M. Jancu, J. Even, N. Bertru, P. Turban, A. Balocchi, X. Marie, O. Durand and A. Le Corre, Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate : towards photonics on silicon applications Thin Solid Films (2012), [6] T. Nguyen Thanh, C. Robert, E. Giudicelli, A. Létoublon, C. Cornet, A. Ponchet, T. Rohel, A. Balocchi, J.S. Micha, M. Perrin, S. Loualiche, X. Marie, N. Bertru, O. Durand and A. Le Corre, Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates Journal of Crystal Growth (2012), [7] T. Nguyen Thanh, C. Robert, W. Guo, A. Létoublon, C. Cornet, G. Elias, A. Ponchet, T. Rohel, N. Bertru, A. Balocchi, O. Durand, J.S. Micha, M. Perrin, S. Loualiche, X. Marie and A. Le Corre, Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon Journal of Applied Physics, vol. 112, p , [8] T. Nguyen Thanh, C. Robert, A. Létoublon, C. Cornet, T. Quinci, E. Giudicelli, S. Almosni, N. Boudet, A. Ponchet, J. Kuyyalil, M. Danila, O.Durand., N.Bertru and A.Le Corre, Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers Thin Solid Films (2012), [9] C. Robert, C. Cornet, P. Turban, T. Nguyen Thanh, J. Even, J.-M. Jancu, M. Perrin, H. Folliot, T. Rohel, S. Tricot, A. Balocchi, D. Lagarde, X. Marie, N. Bertru, O. Durand and A. Le Corre, Electronic, optical and structural properties of (In,Ga)As/GaP quantum dots Physical Review B, vol. 86, p , [10] T. Nguyen Thanh, C. Robert, C. Cornet, W. Guo, A. Letoublon, M. Perrin, N. Bertru, J. Even, N. Chevalier, H. Folliot, S. Loualiche, A. Ponchet, G. Elias, J. S. Micha, O. Durand, and A. Le Corre, Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82681H (January 20, 2012), [11] T. Nguyen Thanh, C. Robert, C. Cornet, M. Perrin, J.-M. Jancu, N. Bertru, J. Even, N. Chevalier, H. Folliot, O. Durand, and A. Le Corre, Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dot Applied Physics Letters, vol. 99, p , [12] C. Robert, A. Bondi, T. Nguyen Thanh, J. Even, C. Cornet, O. Durand, J. P. Burin, J.-M. Jancu, W. Guo, A. Le toublon, H. Folliot, S. Boyer-Richard, M. Perrin, N. Chevalier, O. Dehaese, K. Tavernier, S. Loualiche, and A. Le Corre, Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen Applied Physics Letters, vol. 98, no. 25, p , 2011.

5 [13] W. Guo, T. Nguyen Thanh, G. Elias, A. Letoublon, C. Cornet, A. Ponchet, A. Bondi, T. Rohel, N. Bertru, C. Robert, O. Durand, J. S. Micha, and A. Le Corre, Structural characterisation of GaP/Si nanolayers in Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials, 2011, pp [14] C. Cornet, C. Robert, T. Nguyen Thanh, W. Guo, A. Bondi, G. Elias, A. Letoublon, S. Richard, J.-P. Burin, M. Perrin, J.-M. Jancu, O. Durand, J. Even, S. Loualiche, H. Folliot, N. Bertru, A. Ponchet, and A. Le Corre, Carrier injection in GaAsPN/GaPN quantum wells on Silicon in Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials, 2011, pp MANUSCRIPTS UNDER PREPARATION AND SUBMITTED [1] T. Quinci, J. Kuyyalil, T. Nguyen Thanh, C. Cornet, T. Rohel, K. Tavernier, A. Rambaud, A. Létoublon, S. Almosni, S. Loualiche, N. Bertru, O.Durand and A. Le Corre, GaP on bistepped Si surface using UHV-CVD/MBE growth cluster (Submitted to Journal of Crystal Growth, 2013) [2] J. Kuyyalil, T. Nguyen Thanh, T. Quinci, S. Almosni, A. Létoublon, T. Rohel, N. Bertru, A. Le Corre, O. Durand and C. Cornet, Nitrogen-phosphorus competition in the molecular beam epitaxy of GaPN (Submitted to Journal of Crystal Growth, 2013) [3] T. Nguyen Thanh et al., Suppresion of microtwins in GaP/Si thin film grown by Molecular Beam Epitaxy (Under preparation) SELECTED INTERNATIONAL COMMUNICATION [1] O. Durand, C. Robert, T. Nguyen Thanh, S. Almosni, T. Quinci, J. Kuyyalil, C. Cornet, A. Létoublon, C. Levallois, J.-M. Jancu, J. Even, L. Pédesseau, M. Perrin, N.Bertru, A. Sakri, N. Boudet, A. Ponchet, P. Rale, L. Lombez, J.-F. Guillemoles, X. Marie, A. Balocchi, P. Turban, S. Tricot and A. Le Corre. Structural, optical and electronic properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications Invited talk at SPIE Photonics West 2013, San Francisco, USA, February 2013 [2] T. Nguyen Thanh, C. Robert, C. Cornet, W. Guo, A. Létoublon, M. Perrin, N. Bertru, J. Even, N. Chevalier, H. Folliot, S. Loualiche, A. Ponchet, G. Elias, J.S. Micha, O. Durand and A. Le Corre Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si Invited talk at SPIE Photonics West 2012, San Francisco, USA, January 2012 [3] J. Kuyyalil, T. Nguyen Thanh, T. Quinci, C. Cornet, A. Létoublon, Y. Ping Wang, J. Stodolna, F. Demangeot, A. Ponchet, N. Bertru, O. Durand and A. Le Corre Growth of GaP on biatomic Si steps using a UHVCVD-MBE cluster Talk at 17 th Euro-MBE, Levi, Finland, March [4] C. Cornet, P. Turban, C. Robert, T. Nguyen Thanh, S. Tricot, N. Bertru, O. Durand and A. Le Corre Unusual C2 symmetry properties of (In,Ga)As/GaP quantum dots morphology Talk at ICSNN 2012, Dresden, Germany, July 2012 [5] C. Robert, T. Nguyen Thanh, C. Cornet, P. Turban, M. Perrin, A. Balocchi, N. Bertru, J. Even, J.M. Jancu, S. Tricot, O. Durand, X. Marie and A. Le Corre

6 Theoretical and experimental study of (In,Ga)As/GaP quantum dots Talk at ICSNN 2012, Dresden, Germany, July 2012 [6] T. Nguyen Thanh, C. Robert, A. Létoublon, C. Cornet, T. Quinci, E. Giudicelli, S. Almosni, N. Boudet, A. Ponchet, J. Kuyyalil, M. Danila, O.Durand., N.Bertru and A. Le Corre Synchrotron X-ray diffraction complementary peak analysis for quantitative defect evaluation in GaP/Si nanolayers Talk at E-MRS 2012, Strasbourg, France, May 2012 [7] C. Cornet, C. Robert, T. Nguyen Thanh, W. Guo, A. Bondi, G. Elias, A. Létoublon, S. Richard, J.-P. Burin, M. Perrin, J.-M. Jancu, O. Durand, J. Even, S. Loualiche, H. Folliot, N. Bertru, A. Ponchet and A. Le Corre Carrier Injection in GaAsPN/GaPN Quantum Wells on Silicon Talk at IPRM 2011, Berlin, Germany, May 2011 [8] W. Guo, T. Nguyen Thanh, A. Létoublon, G. Elias, C. Cornet, A. Ponchet, A. Bondi, T. Rohel, N. Bertru, C. Robert, O. Durand, J.S. Micha, M. Perrin, J. Even, S. Loualiche and A. Le Corre Structural characterisation of GaP/Si nanolayers Talk at E-MRS 2011, Nice, France, May 2011 [9] A. Bondi, C. Cornet, W. Guo, O. Dehaese, N. Chevalier, C. Robert, T. Nguyen Thanh, S. Richard, M. Perrin, A. Létoublon, J. P. Burin. J. Even, O. Durand and A. Le Corre MBE growth of (GaAsPN/GaPN)/GaP quantum wells light emitting diode Talk at 16 th Euro-MBE 2011, Alpe d Huez, France, March 2011 [10] C. Cornet, T. Nguyen Thanh, T. Quinci, S. Almosni, J. Kuyyalil, A. Létoublon, N. Bertru, O. Durand and A. Le Corre Enhanced incorporation of nitrogen on atomic step edges adsorption sites in diluted nitrides alloys Poster at 17 th Euro-MBE, Levi, Finland, March [11] T. Nguyen Thanh, C. Robert, E. Giudicelli, A. Létoublon, C. Cornet, A. Ponchet, T. Rohel, A. Balocchi, N. Boudet, M. Perrin, S. Loualiche, X. Marie, N. Bertru, O. Durand and A. Le-Corre Structural and optical studies of GaP/Si induced defects in GaAsN quantum wells grown on Si substrate Poster at MBE2012, Nara, Japan, September 2012 [12] C. Robert, T. Nguyen Thanh, C. Cornet, P. Turban, M. Perrin, A. Balocchi, N. Bertru, J. Even, J.-M. Jancu, S. Tricot, O. Durand, X. Marie and A. Le Corre (In,Ga)As/GaP quantum dots for monolithic integration on silicon Poster at ICPS 2012, Zurich, Switzerland, August 2012 [13] C. Robert, T. Nguyen Thanh, S. Almosni, T. Quinci, M. Perrin, C. Cornet, J. Even, J.-M. Jancu, A. Létoublon, C. Levallois, O. Durand and A. Le Corre Dilute nitride GaNAsP for photonic applications on silicon Poster at International Symposium on Nitrides (ISNT) 2012, Saint-Malo, France, June 2012 [14] C. Robert, T. Nguyen Thanh, M. Perrin, C. Cornet, A. Létoublon, J.-M. Jancu, J. Even, N. Bertru, P. Turban, A. Balocchi, X. Marie, O. Durand, A. Le Corre Development of a laser structure for the pseudomorphic integration on silicon Poster at E-MRS 2012, Strasbourg, France, May 2012

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