In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP N.V. (year). All rights reserved or Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

11 November 214 Product data sheet 1. General description Logic level N-channel MOSFET in LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q11 standard for use in high performance automotive applications. 2. Features and benefits Q11 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V GS(th) rating of greater than.5 V at 175 C 3. Applications 12 V Automotive systems Motors, lighting and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j 25 C; T j 175 C - - 4 V I D drain current V GS = 5 V; T mb = 25 C; Fig. 2 [1] - - 1 A P tot total power dissipation T mb = 25 C; Fig. 1 - - 194 W Static characteristics R DSon Dynamic characteristics drain-source on-state resistance Q GD gate-drain charge V GS = 5 V; I D = 25 A; V DS = 32 V; V GS = 5 V; I D = 25 A; T j = 25 C; Fig. 11-2.47 3 mω Fig. 13; Fig. 14-1.7 - nc [1] Continuous current is limited by package. Scan or click this QR code to view the latest information for this product

5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain mb 1 2 3 4 LFPAK56; Power- SO8 (SOT669) G mbb76 D S 6. Ordering information Table 3. Type number Ordering information Package Name Description Version LFPAK56; Power-SO8 Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 7. Marking Table 4. Marking codes Type number Marking code 93E4 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 6134). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage T j 25 C; T j 175 C - 4 V V DGR drain-gate voltage R GS = 2 kω - 4 V V GS gate-source voltage T j 175 C; DC -1 1 V T j 175 C; Pulsed [1][2] -15 15 V P tot total power dissipation T mb = 25 C; Fig. 1-194 W I D drain current T mb = 25 C; V GS = 5 V; Fig. 2 [3] - 1 A T mb = 1 C; V GS = 5 V; Fig. 2 [3] - 1 A I DM peak drain current T mb = 25 C; pulsed; t p 1 µs; Fig. 3-718 A All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 214. All rights reserved Product data sheet 11 November 214 2 / 13

Symbol Parameter Conditions Min Max Unit T stg storage temperature -55 175 C T j junction temperature -55 175 C Source-drain diode I S source current T mb = 25 C [3] - 1 A I SM peak source current pulsed; t p 1 µs; T mb = 25 C - 718 A Avalanche ruggedness E DS(AL)S non-repetitive drain-source avalanche energy I D = 1 A; V sup 4 V; R GS = 5 Ω; V GS = 5 V; T j(init) = 25 C; unclamped; Fig. 4 [4][5] - 193.8 mj [1] Accumulated pulse duration up to 5 hours delivers zero defect ppm [2] Significantly longer life times are achieved by lowering T j and or V GS [3] Continuous current is limited by package. [4] Single-pulse avalanche rating limited by maximum junction temperature of 175 C. [5] Refer to application note AN1273 for further information. 12 P der (%) 3aa16 2 I D (A) 16 3aaj65 8 12 4 8 (1) 4 5 1 15 2 T mb ( C) 25 5 75 1 125 15 175 2 T mb ( C) Fig. 1. Normalized total power dissipation as a function of mounting base temperature Fig. 2. (1) Capped at 1A due to package Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 214. All rights reserved Product data sheet 11 November 214 3 / 13

1 3 I D (A) 1 2 Limit R DSon = V DS / I D t p = 1 us 1 us 3aaj67 1 1 DC 1 ms 1 ms 1 ms 1-1 1-1 1 1 V DS (V) 1 2 Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 1 3 I AL (A) 3aaj66 1 2 (1) 1 (2) (3) 1 1-1 1-3 1-2 1-1 1 t AL (ms) 1 Fig. 4. Avalanche rating; avalanche current as a function of avalanche time 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-mb) thermal resistance from junction to mounting base Fig. 5 - -.77 K/W All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 214. All rights reserved Product data sheet 11 November 214 4 / 13

1 3aaj68 Z th(j-mb) (K/W) δ =.5 1-1.2.1.5 1-2.2 single shot P t p δ = T t p t T 1-3 1-6 1-5 1-4 1-3 1-2 1-1 t p (s) 1 Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration 1. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source breakdown voltage I D = 25 µa; V GS = V; T j = 25 C 4 - - V I D = 25 µa; V GS = V; T j = -55 C 36 - - V V GS(th) I DSS I GSS gate-source threshold voltage drain leakage current gate leakage current I D = 1 ma; V DS = V GS ; T j = 25 C; 1.4 1.7 2.1 V Fig. 9; Fig. 1 I D = 1 ma; V DS = V GS ; T j = -55 C; Fig. 9 - - 2.45 V I D = 1 ma; V DS = V GS ; T j = 175 C;.5 - - V Fig. 9 V DS = 4 V; V GS = V; T j = 25 C -.13 1 µa V DS = 4 V; V GS = V; T j = 175 C - - 5 µa V GS = 1 V; V DS = V; T j = 25 C - 2 1 na V GS = -1 V; V DS = V; T j = 25 C - 2 1 na R DSon Dynamic characteristics drain-source on-state resistance V GS = 5 V; I D = 25 A; T j = 25 C; Fig. 11-2.47 3 mω V GS = 1 V; I D = 25 A; T j = 25 C; Fig. 11 V GS = 5 V; I D = 25 A; T j = 175 C; Fig. 12; Fig. 11-1.98 2.5 mω - - 6 mω Q G(tot) total gate charge I D = 25 A; V DS = 32 V; V GS = 5 V; - 35.5 - nc Q GS gate-source charge Fig. 13; Fig. 14-11.7 - nc All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 214. All rights reserved Product data sheet 11 November 214 5 / 13

Symbol Parameter Conditions Min Typ Max Unit Q GD gate-drain charge - 1.7 - nc C iss input capacitance V GS = V; V DS = 25 V; f = 1 MHz; - 4471 5962 pf C oss output capacitance T j = 25 C; Fig. 15-563 676 pf C rss reverse transfer capacitance - 251 344 pf t d(on) turn-on delay time V DS = 3 V; R L = 1.2 Ω; V GS = 5 V; - 24 - ns t r rise time R G(ext) = 5 Ω - 44 - ns t d(off) turn-off delay time - 53 - ns t f fall time - 34 - ns Source-drain diode V SD source-drain voltage I S = 25 A; V GS = V; T j = 25 C; Fig. 16 -.81 1.2 V t rr reverse recovery time I S = 2 A; di S /dt = -1 A/µs; V GS = V; - 3 - ns Q r recovered charge V DS = 25 V - 25 - nc 1 I D (A) 8 1 V 3aaj69 V GS = 3 V 12 R DSon (mω) 3aaj7 6 2.8 V 8 4 4 2 2.6 V 2.4 V 1 2 3 4 V DS (V) 2 4 6 8 1 V GS (V) Fig. 6. T j = 25 C; t p = 3 μs Output characteristics; drain current as a function of drain-source voltage; typical values Fig. 7. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 214. All rights reserved Product data sheet 11 November 214 6 / 13

2 I D (A) 3aaj72 3 V GS(th) (V) 2.5 3aah25 15 max 2 typ 1 1.5 1 min 5 T j = 175 C T j = 25 C.5 1 2 3 4 V GS (V) -6 6 12 T j ( C) 18 Fig. 8. Transfer characteristics; drain current as a function of gate-source voltage; typical values Fig. 9. Gate-source threshold voltage as a function of junction temperature I D (A) 1-1 1-2 3aah26 2 R DSon (mω) 15 3aaj75 2.8 3 1-3 min typ max 1 1-4 1-5 5 3.5 4.5 1-6 1 2 3 V GS (V) V GS (V) = 1 2 4 6 8 1 I D (A) Fig. 1. Sub-threshold drain current as a function of gate-source voltage T j = 25 C; t p = 3 μs Fig. 11. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 214. All rights reserved Product data sheet 11 November 214 7 / 13

a 2.4 3aaj814 V DS I D 1.6 V GS(pl) V GS(th) V GS.8 Q GS1 Q GS2 Q GS Q G(tot) Q GD -6 6 12 18 T j ( C) Fig. 13. Gate charge waveform definitions 3aaa58 Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 1 3aaj77 1 4 3aaj78 V GS (V) 8 C (pf) C iss 6 V DS = 14V V DS = 32V 1 3 4 C oss 2 C rss 2 4 6 8 Q G (nc) Fig. 14. Gate-source voltage as a function of gate charge; typical values 1 2 1-1 1 1 V DS (V) 1 2 Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 214. All rights reserved Product data sheet 11 November 214 8 / 13

8 3aaj79 I S (A) 6 4 2 T j = 175 C T j = 25 C.3.6.9 1.2 V SD (V) Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 214. All rights reserved Product data sheet 11 November 214 9 / 13

11. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 E A A 2 C b 2 c 2 E 1 L 1 b 3 mounting base b 4 D 1 H D L 2 1 2 3 4 e b w A c X 1/2 e A A 1 C (A 3 ) detail X L q y C Dimensions (mm are the original dimensions) 5 mm scale θ 8 Unit (1) A A 1 A 2 A 3 b b 2 b 3 b 4 c c 2 D (1) D 1 (1) E (1) E 1 (1) e H L L 1 L 2 w y mm max nom min Outline version SOT669 1.2 1.1.15. 1.1.95.25.5.35 4.41 3.62 Note 1. Plastic or metal protrusions of.15 mm maximum per side are not included. 2.2 2. References IEC JEDEC JEITA MO-235.9.7.25.19.3.24 4.1 3.8 4.2 5. 3.3 6.2.85 1.3 1.3 1.27 4.8 3.1 5.8.4.8.8 European projection.25 Issue date 11-3-25 13-2-27.1 sot669_po Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669) All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 214. All rights reserved Product data sheet 11 November 214 1 / 13

12. Legal information 12.1 Data sheet status Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet Product status [3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Preview The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 214. All rights reserved Product data sheet 11 November 214 11 / 13

No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations A non-english (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo are trademarks of ibiquity Digital Corporation. All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 214. All rights reserved Product data sheet 11 November 214 12 / 13

13. Contents 1 General description... 1 2 Features and benefits...1 3 Applications... 1 4 Quick reference data... 1 5 Pinning information...2 6 Ordering information...2 7 Marking... 2 8 Limiting values...2 9 Thermal characteristics...4 1 Characteristics...5 11 Package outline... 1 12 Legal information...11 12.1 Data sheet status... 11 12.2 Definitions...11 12.3 Disclaimers...11 12.4 Trademarks... 12 NXP Semiconductors N.V. 214. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 November 214 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 214. All rights reserved Product data sheet 11 November 214 13 / 13