DISCRETE SEMICONDUCTORS DATA SHEET. BTA204W series D, E and F Three quadrant triacs guaranteed commutation

Similar documents
DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors

Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control

PINNING - TO220AB PIN CONFIGURATION SYMBOL

logic level for RCD/ GFI/ LCCB applications

logic level for RCD/ GFI applications

logic level for RCD/ GFI/ LCCB applications

General purpose low power phase control General purpose low power switching Solid-state relay. Symbol Parameter Conditions Min Typ Max Unit V DRM

I T(AV) off-state voltages. PINNING - TO92 variant PIN CONFIGURATION SYMBOL. 3 anode g

SCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.

BT E. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data. 4Q Triac 30 August 2013 Product data sheet

BT139B General description. 2. Features and benefits. 3. Applications. Quick reference data. 4Q Triac 27 September 2013 Product data sheet

DISCRETE SEMICONDUCTORS DATA SHEET. dbook, halfpage M3D088. BB201 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12

Schottky barrier quadruple diode

Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

10 ma LED driver in SOT457

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

Planar PIN diode in a SOD323 very small plastic SMD package.

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description

HEF4011B. 1. General description. 2. Features and benefits. 3. Ordering information. 4. Functional diagram. Quad 2-input NAND gate

NPN wideband transistor in a SOT89 plastic package.

BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1.

1-of-4 decoder/demultiplexer

DISCRETE SEMICONDUCTORS DATA SHEET M3D848. CGD MHz, 20 db gain power doubler amplifier. Product specification 2002 Oct 08

Quad 2-input NAND Schmitt trigger

The 74LVC1G11 provides a single 3-input AND gate.

HEF4021B. 1. General description. 2. Features and benefits. 3. Ordering information. 8-bit static shift register

Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package

3-to-8 line decoder, demultiplexer with address latches

LIN-bus ESD protection diode

SiGe:C Low Noise High Linearity Amplifier

IP4220CZ6. 1. Product profile. Dual USB 2.0 integrated ESD protection. 1.1 General description. 1.2 Features and benefits. 1.

74HC02; 74HCT General description. 2. Features and benefits. Ordering information. Quad 2-input NOR gate

Triple single-pole double-throw analog switch

DISCRETE SEMICONDUCTORS DATA SHEET

The sensor can be operated at any frequency between DC and 1 MHz.

74HC377; 74HCT General description. 2. Features and benefits. 3. Ordering information

45 V, 100 ma NPN general-purpose transistors

8-channel analog multiplexer/demultiplexer

HEF4013B. 1. General description. 2. Features and benefits. 3. Applications. 4. Ordering information. Dual D-type flip-flop

DATA SHEET. PMEGXX10BEA; PMEGXX10BEV 1 A very low V F MEGA Schottky barrier rectifier DISCRETE SEMICONDUCTORS

14-stage ripple-carry binary counter/divider and oscillator

Low-power configurable multiple function gate

74HC175; 74HCT175. Quad D-type flip-flop with reset; positive-edge trigger

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan Sep 21.

BZT52H series. Single Zener diodes in a SOD123F package

DISCRETE SEMICONDUCTORS DATA SHEET. BZX384 series Voltage regulator diodes. Product data sheet Supersedes data of 2003 Apr 01.

Femtofarad bidirectional ESD protection diode

74HC154; 74HCT to-16 line decoder/demultiplexer

Medium power Schottky barrier single diode

PMEG2020EH; PMEG2020EJ

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

PMEG3015EH; PMEG3015EJ

74HC238; 74HCT to-8 line decoder/demultiplexer

AAV003-10E Current Sensor

30 V, single N-channel Trench MOSFET

N-channel enhancement mode TrenchMOS transistor

PMEG3005EB; PMEG3005EL

74HC2G02; 74HCT2G General description. 2. Features and benefits. 3. Ordering information. Dual 2-input NOR gate

74HC574; 74HCT574. Octal D-type flip-flop; positive edge-trigger; 3-state

8-bit binary counter with output register; 3-state

74HCU General description. 2. Features and benefits. 3. Ordering information. Hex unbuffered inverter

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct Feb 03.

74HC107; 74HCT107. Dual JK flip-flop with reset; negative-edge trigger

40 V, 200 ma NPN switching transistor

65 V, 100 ma PNP/PNP general-purpose transistor

SMD version of BUK118-50DL

74HC4040; 74HCT stage binary ripple counter

45 V, 100 ma NPN/PNP general-purpose transistor

D-PAK version of BUK117-50DL

CAN bus ESD protection diode

74HC138; 74HCT to-8 line decoder/demultiplexer; inverting

BLL6G1214L Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1.

Hex buffer with open-drain outputs

74HC4067; 74HCT channel analog multiplexer/demultiplexer

DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BZX585 series Voltage regulator diodes. Product data sheet Supersedes data of 2004 Mar 26.

74HC165; 74HCT bit parallel-in/serial out shift register

MCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS

N-channel TrenchMOS logic level FET

74HC573; 74HCT General description. 2. Features and benefits. Octal D-type transparent latch; 3-state

PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1.

The 74LVC1G04 provides one inverting buffer.

IP4294CZ10-TBR. ESD protection for ultra high-speed interfaces

NPN wideband silicon germanium RF transistor

2PD601ARL; 2PD601ASL

BAS70 series; 1PS7xSB70 series

74HC393; 74HCT393. Dual 4-bit binary ripple counter

TIC225 SERIES SILICON TRIACS

Low-power D-type flip-flop; positive-edge trigger; 3-state

AAT001-10E TMR Angle Sensor

74HC74; 74HCT General description. 2. Features and benefits. 3. Ordering information

DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.

74HC4066; 74HCT4066. Quad single-pole single-throw analog switch

60 V, 360 ma N-channel Trench MOSFET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source T amb = 25 C V

Buffer with open-drain output. The 74LVC1G07 provides the non-inverting buffer.

NPN wideband silicon RF transistor

MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. use

50 V, 180 ma P-channel Trench MOSFET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j = 25 C V

74HC595; 74HCT General description. 2. Features and benefits. 3. Applications

Transcription:

DISCRETE SEMICONDUCTORS DATA SHEET BTA4W series D, E and F Product specification December 998

Product specification BTA4W series D, E and F GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope suitable for surface mounting, intended for use in BTA4W 5D 6D motor control circuits or with other BTA4W 5E 6E 8E highly inductive loads. These devices BTA4W 5F 6F 8F balance the requirements of V DRM Repetitive peak 5 6 8 commutation performance and gate offstate voltages V sensitivity. The "sensitive gate" E I T(RMS) RMS onstate current A series and "logic level" D series are I TSM Nonrepetitive peak onstate A intended for interfacing with low power current drivers, including micro controllers. PINNING SOT3 PIN CONFIGURATION SYMBOL PIN DESCRIPTION main terminal main terminal 4 T T 3 gate tab main terminal 3 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 5 6 8 V DRM Repetitive peak offstate 5 6 8 V voltages I T(RMS) RMS onstate current full sine wave; A T sp 8 C I TSM Nonrepetitive peak full sine wave; onstate current T j = 5 C prior to surge t = ms A t = 6.7 ms A I t I t for fusing t = ms.5 A s di T /dt Repetitive rate of rise of I TM =.5 A; A/µs onstate current after I G =. A; triggering di G /dt =. A/µs I GM Peak gate current A V GM Peak gate voltage 5 V P GM Peak gate power 5 W P G(AV) Average gate power over any ms.5 W period T stg Storage temperature 4 5 C T j Operating junction 5 C temperature Although not recommended, offstate voltages up to 8V may be applied without damage, but the triac may switch to the onstate. The rate of rise of current should not exceed 6 A/µs. December 998 Rev.

Product specification BTA4W series D, E and F THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th jsp Thermal resistance full or half cycle 5 K/W junction to solder point R th ja Thermal resistance pcb mounted; minimum footprint 56 K/W junction to ambient pcb mounted; pad area as in fig: 7 K/W STATIC CHARACTERISTICS T j = 5 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BTA4W...D...E...F I GT Gate trigger current V D = V; I T =. A T+ G+ 5 5 ma T+ G T G 5 5 5 5 ma ma I L Latching current V D = V; I GT =. A T+ G+ T+ G 6 9 8 3 ma ma T G 6 ma I H Holding current V D = V; I GT =. A 6 ma V T Onstate voltage I T = A..5 V V GT Gate trigger voltage V D = V; I T =. A.7.5 V V D = 4 V; I T =. A;.5.4 V T j = 5 C I D Offstate leakage current V D = V DRM(max) ;..5 ma T j = 5 C DYNAMIC CHARACTERISTICS T j = 5 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BTA4W...D...E...F dv D /dt Critical rate of rise of V DM = 67% V DRM(max) ; 3 5 V/µs offstate voltage T j = 5 C; exponential waveform; gate open circuit di com /dt Critical rate of change of V DM = 4 V; T j = 5 C;...5 A/ms commutating current I T(RMS) = A; dv com /dt = V/µs; gate open circuit di com /dt Critical rate of change of V DM = 4 V; T j = 5 C; 5. A/ms commutating current I T(RMS) = A; dv com /dt =.V/µs; gate open circuit t gt Gate controlled turnon I TM = A; V D = V DRM(max) ; µs time I G =. A; di G /dt = 5 A/µs Device does not trigger in the T, G+ quadrant. December 998 3 Rev.

NXP Semiconductors Product specification BTA4W series D, E and F Ptot / W.4 BT34W Tsp(max) / C 4 IT(RMS) / A. BT34W..8.6.4 = 8 9 6 3 7 3 6 9.8.6.4 8 C.. 5..4.6.8. IT(RMS) / A Fig.. Maximum onstate dissipation, P tot, versus rms onstate current, I T(RMS), where α = conduction angle. 5 5 5 Tsp / C Fig.4. Maximum permissible rms current I T(RMS), versus solder point temperature T sp. ITSM / A BT34W IT ITSM IT(RMS) / A BT34W T time Tj initial = 5 C max.5 di /dt limit T T G+ quadrant.5 us us ms ms ms T / s Fig.. Maximum permissible nonrepetitive peak onstate current I TSM, versus pulse width t p, for sinusoidal currents, t p ms... surge duration / s Fig.5. Maximum permissible repetitive rms onstate current I T(RMS), versus surge duration, for sinusoidal currents, f = 5 Hz; T sp 8 C. ITSM / A BT34W IT T I TSM time.6.4 VGT(Tj) VGT(5 C) BT36 8 Tj initial = 5 C max. 6 4.8.6 Number of cycles at 5Hz Fig.3. Maximum permissible nonrepetitive peak onstate current I TSM, versus number of cycles, for sinusoidal currents, f = 5 Hz..4 5 5 5 Tj / C Fig.6. Normalised gate trigger voltage V GT (T j )/ V GT (5 C), versus junction temperature T j. December 998 4 Rev.

Product specification BTA4W series D, E and F 3.5 IGT(Tj) IGT(5 C) BTA4 T+ G+ T+ G T G IT / A Tj = 5 C Tj = 5 C.5 Vo =. V Rs =. Ohms BT34W typ.5 max.5.5 5 5 5 Tj / C Fig.7. Normalised gate trigger current I GT (T j )/ I GT (5 C), versus junction temperature T j..5.5 VT / V Fig.. Typical and maximum onstate characteristic. 3 IL(Tj) IL(5 C) TRIAC Zth jsp (K/W) BT34W.5 unidirectional.5 bidirectional. P D t p.5 5 5 5 Tj / C Fig.8. Normalised latching current I L (T j )/ I L (5 C), versus junction temperature T j.. us.ms ms ms.s s s tp / s Fig.. Transient thermal impedance Z th jsp, versus pulse width t p. t 3 IH(Tj) IH(5C) TRIAC.5.5.5 5 5 5 Tj / C Fig.9. Normalised holding current I H (T j )/ I H (5 C), versus junction temperature T j. December 998 5 Rev.

Product specification BTA4W series D, E and F MOUNTING INSTRUCTIONS Dimensions in mm. 3.8 min.5 min.5 min (3x).3 6.3.5 min 4.6 Fig.. soldering pattern for surface mounting SOT3. MECHANICAL DATA Dimensions in mm Net Mass:. g.3.4 6.7 6.3 3..9 B. M A 4 A.. 3.7 3.3 7.3 6.7 6 max 3.8 max max.5.85 3.3.8.6 4.6. (4x) M B Fig.3. SOT3 surface mounting package. Notes. For further information, refer to Philips publication SC8 " SMD Footprint Design and Soldering Guidelines". Order code: 9397 75 55.. Epoxy meets UL94 V at /8". December 998 6 Rev.

Legal information DATA SHEET STATUS DOCUMENT PRODUCT STATUS () STATUS () DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes. Please consult the most recently issued document before initiating or completing a design.. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, lifecritical or safetycritical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

Legal information NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 634) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Nonautomotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for designin and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors specifications such use shall be solely at customer s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors standard warranty and NXP Semiconductors product specifications. Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send email to: salesaddresses@nxp.com NXP B.V. All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Printed in The Netherlands