INA INA INA INA Low-Power, Single-Supply, CMOS INSTRUMENTATION AMPLIFIERS SBOSC DECEMBER REVISED APRIL FEATURES DESIGNED FOR LOW COST HIGH GAIN ACCURACY: G =,.%, ppm/ C GAIN SET WITH EXT. RESISTORS FOR > V/V LOW OFFSET VOLTAGE: ±µv HIGH CMRR: 9dB DC, db at khz LOW BIAS CURRENT:.pA BANDWIDTH, SLEW RATE:.MHz, V/µs RAIL-TO-RAIL OUTPUT SWING: (V+).V WIDE TEMPERATURE RANGE: C to + C LOW QUIESCENT CURRENT: 9µA max/chan SHUT DOWN:.µA MSOP- SINGLE AND TSSOP- DUAL PACKAGES DESCRIPTION The INA and INA are rail-to-rail output, low-power CMOS instrumentation amplifiers that offer wide range, singlesupply operation as well as bipolar-supply operation. The INA family provides low-cost, low-noise amplification of differential signals with a low quiescent current of µa (dropping to.µa when shutdown). Returning to normal operation within microseconds, this INA can be used for battery or multi-channel applications. Configured internally in a gain of V/V, the INA offers flexibility in higher gains by choosing external resistors. APPLICATIONS INDUSTRIAL SENSOR AMPLIFIERS: Bridge, RTD, Thermocouple, Position PHYSIOLOGICAL AMPLIFIERS: ECG, EEG, EMG A/D CONVERTER SIGNAL CONDITIONING DIFFERENTIAL LINE RECEIVERS WITH GAIN FIELD UTILITY METERS PCMCIA CARDS AUDIO AMPLIFIERS COMMUNICATION SYSTEMS TEST EQUIPMENT AUTOMOTIVE INSTRUMENTATION The INA rejects line noise and its harmonics, because common-mode error remains low even at higher frequencies. High bandwidth and slew rate makes the INA ideal for directly driving sampling Analog-to-Digital (A/D) converters as well as general-purpose applications. With high precision, low cost, and small packages, the INA outperforms discrete designs. They are specified for a wide temperature range of C to + C. R R G = + (R /R ) R G kω kω INA INA V kω Ch A A kω A A V IN + Ch B V+ Shutdown Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright -, Texas Instruments Incorporated
ABSOLUTE MAXIMUM RATINGS () Supply Voltage, V+ to....v Signal Input Terminals, Voltage ()... ().V to (V+) +.V Current ()... ma Output Short-Circuit ()... Continuous Operating Temperature... C to + C Storage Temperature... C to + C Junction Temperature... C Lead Temperature (soldering, s)... C NOTES: () Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. () Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than.v beyond the supply rails should be current limited to ma or less. () Short-circuit to ground, one amplifier per package. ELECTROSTATIC DISCHAE SENSITIVITY This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE/ORDERING INFORMATION () PACKAGE PACKAGE PRODUCT PACKAGE-LEAD DESIGNATOR MARKING Single INAIDGK MSOP- DGK C INAAIDGK MSOP- DGK C Dual INAAIPW TSSOP- PW A NOTES: () For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at. PIN CONFIGURATION Top View INA INA A A Shutdown A A Shutdown V IN +A A V+ V+ V IN + V IN +B B B 9 B MSOP- (DGK) B Shutdown B Dual, TSSOP- (PW) INA, INA SBOSC
ELECTRICAL CHARACTERISTICS: V S = +.V to +.V Boldface limits apply over the specified temperature range, T A = C to C. At T A = + C, R L = kω, G =, and V = V S /, unless otherwise noted. INAAIDGK INAIDGK INAAIPW PARAMETER CONDITION MIN TYP MAX MIN TYP MAX UNITS INPUT Input Offset Voltage, RTI V S = +V ± ± ± µv Over Temperature V OS ±. ±. mv Temperature Coefficient dv OS /dt ± µv/ C vs Power Supply PSRR V S = +.V to +.V ± ± µv/v vs Temperature ± µv/v Long-Term Stability ±. µv/month Input Impedance Ω pf Input Common-Mode Range V S =.V.. V V S = V.. V Common-Mode Rejection CMRR V S = V, V CM =.V to.v 9 9 db C to + C V S = V, V CM =.V to.v db Over Temperature V S = V, V CM =.V to.v db V S =.V, V CM =.V to.v 9 db Crosstalk, Dual db INPUT BIAS CURRENT V CM = V S / Bias Current I B ±. ± pa Offset Current I OS ±. ± pa NOISE, RTI R S = Ω Voltage Noise: f = Hz e N nv/ Hz f = Hz 9 nv/ Hz f = khz nv/ Hz f =.Hz to Hz µv PP Current Noise: f = khz i N. fa/ Hz GAIN () Gain Equation, Externally Set G > G = + (R /R ) Range of Gain V/V Gain Error G = ±. ±. % vs Temperature G = ± ± ppm/ C Nonlinearity G = (), V S = V, V O =. to.9 ±. ±. % of FS Over Temperature ±. ±. % of FS OUTPUT Output Voltage Swing from Rail () R L = kω mv Over Temperature G > mv Capacitance Load Drive See Typical Characteristics pf Short-Circuit Current +/ ma FREQUENCY RESPONSE Bandwidth, db BW G =. MHz Slew Rate SR V S = V, G = V/µs Settling Time,.% t S G =, C L = pf, V O = V step. µs.%. µs Overload Recovery % Input Overload G = µs POWER SUPPLY Specified Voltage Range +. +. V Operating Voltage Range +. to +. V Quiescent Current per Channel I Q V SD >. () 9 µa Over Temperature µa Shutdown Quiescent Current/Chan I SD V SD <. (). µa TEMPERATURE RANGE Specified/Operating Range + C Storage Range + C Thermal Resistance θ JA MSOP-, TSSOP- Surface Mount C/W Specifications same as INAIDGK NOTES: () Does not include errors from external gain setting resistors. () Output voltage swings are measured between the output and power-supply rails. Output swings to rail only if G. Output does not swing to positive rail if gain is less than. () See typical characteristic Percent Overshoot vs Load Capacitance. () See typical characteristic Shutdown Voltage vs Supply Voltage. INA, INA SBOSC
TYPICAL CHARACTERISTICS At T A = + C, V S = V, V CM = V S /, R L = kω, and C L = pf, unless otherwise noted. GAIN vs FREQUENCY COMMON-MODE REJECTION RATIO vs FREQUENCY Gain = Gain (db) Gain = Gain = Gain = CMRR (db) k k k M M k k k Frequency (Hz) Frequency (Hz) PSRR (db) 9 POWER-SUPPLY REJECTION RATIO vs FREQUENCY Maximum Output Voltage (V PP ) MAXIMUM OUTPUT VOLTAGE vs FREQUENCY V S =.V V S =.V V S =.V k k k k k k M M Frequency (Hz) Frequency (Hz) k NOISE vs FREQUENCY.Hz TO Hz VOLTAGE NOISE V NOISE (nv/ Hz) k I NOISE (fa/ Hz) µv/div. k k k s/div Frequency (Hz) INA, INA SBOSC
TYPICAL CHARACTERISTICS (Cont.) At T A = + C, V S = V, V CM = V S /, R L = kω, and C L = pf, unless otherwise noted. OUTPUT SWING vs LOAD RESISTANCE COMMON-MODE INPUT RANGE vs ERENCE VOLTAGE Swing-to-Rail (mv) To Negative Rail To Positive Rail Output Referred to Ground (V) Outside of Normal Operation Increasing k k k k k R LOAD (Ω) Input Common-Mode Voltage (V) I Q (µa), I SD (na) QUIESCENT CURRENT AND SHUTDOWN CURRENT vs POWER SUPPLY I Q I SD.... Supply Voltage (V) I Q (µa) QUIESCENT CURRENT AND SHUTDOWN CURRENT vs TEMPERATURE Temperature ( C) I Q I SD SHORT-CIRCUIT CURRENT vs POWER SUPPLY SHORT-CIRCUIT CURRENT vs TEMPERATURE I SC+ I SC+ I SC (ma) I SC I SC (ma) I SC.... Supply Voltage (V) Temperature ( C) INA, INA SBOSC
TYPICAL CHARACTERISTICS (Cont.) At T A = + C, V S = V, V CM = V S /, R L = kω, and C L = pf, unless otherwise noted. SMALL-SIGNAL STEP RESPONSE (G = ) SMALL-SIGNAL STEP RESPONSE (G = ) mv/div mv/div µs/div µs/div SMALL-SIGNAL STEP RESPONSE (G =, C L = pf) SMALL-SIGNAL STEP RESPONSE (G =, C L = pf) mv/div mv/div µs/div µs/div SMALL-SIGNAL STEP RESPONSE (G =, C L = pf) LAE-SIGNAL STEP RESPONSE (G = ) mv/div V/div µs/div µs/div INA, INA SBOSC
TYPICAL CHARACTERISTICS (Cont.) At T A = + C, V S = V, V CM = V S /, R L = kω, and C L = pf, unless otherwise noted. Settling Time (µs) Output V PP Differential Input Drive SETTLING TIME vs GAIN.% Overshoot (%) 9 PERCENT OVERSHOOT vs LOAD CAPACITANCE Output mv PP Differential Drive G = G =.% k Gain (V/V) k k Load Capacitance (pf) SHUTDOWN VOLTAGE vs SUPPLY VOLTAGE SHUTDOWN TRANSIENT BEHAVIOR. Normal Operation Mode Operation in this Region is not Recommended V SD Shutdown (V). V/div. Shutdown Mode Part Draws Below µa Quiescent Current.... Supply Voltage (V) µs/div Percentage of Amplifiers (%) OFFSET VOLTAGE PRODUCTION DISTRIBUTION..9.................9. Offset Voltage (mv) Percentage of Amplifiers (%) OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTION Offset Voltage (µv/ C) INA, INA SBOSC
TYPICAL CHARACTERISTICS (Cont.) At T A = + C, V S = V, V CM = V S /, R L = kω, and C L = pf, unless otherwise noted. SLEW RATE vs TEMPERATURE INPUT BIAS CURRENT vs TEMPERATURE Slew Rate (V/µs) Input Bias Current (pa) Temperature ( C). Temperature ( C) CHANNEL SEPARATION vs FREQUENCY OUTPUT VOLTAGE SWING vs OUTPUT CURRENT Separation (db) Output Voltage (V) C C C k k k M M Frequency (Hz) Output Current (ma) INA, INA SBOSC
APPLICATIONS INFORMATION The INA is a modified version of the classic two op amp instrumentation amplifier, with an additional gain amplifier. Figure shows the basic connections for the operation of the INA and INA. The power supply should be capacitively decoupled with.µf capacitors as close to the INA as possible for noisy or high-impedance applications. The output is referred to the reference terminal, which must be at least.v below the positive supply rail. OPERATING VOLTAGE The INA family is fully specified over a supply range of +.V to +.V, with key parameters tested over the temperature range of C to + C. Parameters that vary significantly with operating conditions, such as load conditions or temperature, are shown in the Typical Characteristics. The INA may be operated on a single supply. Figure shows a bridge amplifier circuit operated from a single +V supply. The bridge provides a small differential voltage riding on an input common-mode voltage. G = + (R / R ) R Short to for G = R DESIRED GAIN (V/V) R R kω kω kω OPEN kω kω kω SHORT kω 9kΩ 9kΩ V IN + A kω A A V O = ((V IN +) ()) G Also drawn in simplified form: V+ Shutdown Shutdown.µF V+ (For Single Supply).µF V IN + INA FIGURE. Basic Connections. +V Bridge Sensor V IN + () V+ INA Shutdown NOTE: () should be adjusted for the desired output level, keeping in mind that the value of affects the common-mode input range. See Typical Characteristics. FIGURE. Single-Supply Bridge Amplifier. INA, INA SBOSC 9
SETTING THE GAIN The ratio of R to R, or the impedance between pins,, and, determines the gain of the INA. With an internally set gain of, the INA can be programmed for gains greater than according to the following equation: G = + (R /R ) The INA is designed to provide accurate gain, with gain error less than.%. Setting gain with matching TC resistors will minimize gain drift. Errors from external resistors will add directly to the error, and may become dominant error sources. COMMON-MODE INPUT RANGE The upper limit of the common-mode input range is set by the common-mode input range of the second amplifier, A, to.v below positive supply. Under most conditions, the amplifier operates beyond this point with reduced performance. The lower limit of the input range is bounded by the output swing of amplifier A, and is a function of the reference voltage according to the following equation: how the bias current path can be provided in the cases of microphone applications, thermistor applications, ground returns, and dc-coupled resistive bridge applications. When differential source impedance is low, the bias current return path can be connected to one input. With higher source impedance, two equal resistors will provide a balanced input. The advantages are lower input offset voltage due to bias current flowing through the source impedance and better high-frequency gain. Microphone, Hydrophone, etc. kω V B () V IN + V+ Shutdown INA V OA = / V CM / V V+ Shutdown (See typical characteristics Common-Mode Input Range vs Reference Voltage.) ERENCE Transformer V IN + INA The reference terminal defines the zero output voltage level. In setting the reference voltage, the common-mode input of A should be considered according to the following equation: V B () Center-tap provides bias current return V OA = V + (V IN + ) For ensured operation, V OA should be less than V DD.V. The reference pin requires a low-impedance connection. As little as Ω in series with the reference pin will degrade the CMRR to db. The reference pin may be used to compensate for the offset voltage (see Offset Trimming section). The reference voltage level also influences the common-mode input range (see Common-Mode Input Range section). INPUT BIAS CURRENT RETURN With a high input impedance of Ω, the INA is ideal for use with high-impedance sources. The input bias current of less than pa makes the INA nearly independent of input impedance and ideal for low-power applications. For proper operation, a path must be provided for input bias currents for both inputs. Without input bias current paths, the inputs will float to a potential that exceeds common-mode range and the input amplifier will saturate. Figure shows Bridge Amplifier V EX Bridge Sensor V IN + NOTE: () V B is bias voltage within common-mode range, dependent on. INA Bridge resistance provides bias current return FIGURE. Providing an Input Common-Mode Path. V+ Shutdown INA, INA SBOSC
SHUTDOWN MODE The shutdown pin of the INA is nominally connected to V+. When the pin is pulled below.v on a V supply, the INA goes into sleep mode within nanoseconds. For actual shutdown threshold, see the typical characteristic Shutdown Voltage vs Supply Voltage. Drawing less than µa of current, and returning from sleep mode in microseconds, the shutdown feature is useful for portable applications. Once in sleepmode the amplifier has high output impedance, making the INA suitable for multiplexing. V IN +.µf V+ INA +V Shutdown OPA.µF RAIL-TO-RAIL OUTPUT A class AB output stage with common-source transistors is used to achieve rail-to-rail output for gains of or greater. For resistive loads greater than kω, the output voltage can swing to within mv of the supply rail while maintaining low gain error. For heavier loads and over temperature, see the typical characteristic Output Voltage Swing vs Output Current. The INA s low output impedance at high frequencies makes it suitable for directly driving Capacitive- Input A/D converters, as shown in Figure. FIGURE. Output Buffering Circuit. Able to drive loads as low as Ω. V IN + () V+ Shutdown INA +V V IN + V IN V+ Shutdown INA ADS or ADS -Bits OPA Adjustable Voltage NOTE: () should be adjusted for the desired output level. The value of affects the common-mode input range. FIGURE. Optional Offset Trimming Voltage. f S < khz FIGURE. INA Directly Drives Capacitive-Input, High- Speed A/D Converter. OUTPUT BUFFERING The INA is optimized for a load impedance of kω or greater. For higher output current the INA can be buffered using the OPA, as shown in Figure. The OPA can swing within mv of the supply rail, driving a Ω load. The OPA is available in the tiny MSOP- package. INPUT PROTECTION Device inputs are protected by ESD diodes that will conduct if the input voltages exceed the power supplies by more than mv. Momentary voltages greater than mv beyond the power supply can be tolerated if the current through the input pins is limited to ma. This is easily accomplished with input resistor R LIM, as shown in Figure. Many input signals are inherently current-limited to less than ma; therefore, a limiting resistor is not required. OFFSET TRIMMING The INA is laser trimmed for low offset voltage. In the event that external offset adjustment is required, the offset can be adjusted by applying a correction voltage to the reference terminal. Figure shows an optional circuit for trimming offset voltage. The voltage applied to the terminal is added to the output signal. The gain from to is +. An op amp buffer is used to provide low impedance at the terminal to preserve good commonmode rejection. V IN + R LIM I OVERLOAD ma max R LIM INA FIGURE. Sample Output Buffering Circuit. V+ Shutdown INA, INA SBOSC
OFFSET VOLTAGE ERROR CALCULATION The offset voltage (V OS ) of the INAIDGK is specified at a maximum of µv with a +V power supply and the common-mode voltage at V S /. Additional specifications for powersupply rejection and common-mode rejection are provided to allow the user to easily calculate worst-case expected offset under the conditions of a given application. Power-Supply Rejection Ratio (PSRR) is specified in µv/v. For the INA, worst case PSRR is µv/v, which means for each volt of change in power supply, the offset may shift up to µv. Common-Mode Rejection Ratio (CMRR) is specified in db, which can be converted to µv/v using the following equation: CMRR (in µv/v) = [(CMRR in db)/ ] For the INA, the worst case CMRR over the specified common-mode range is 9dB (at G = ) or about µv/v This means that for every volt of change in common-mode, the offset will shift less than µv. These numbers can be used to calculate excursions from the specified offset voltage under different application conditions. For example, an application might configure the amplifier with a.v supply with V common-mode. This configuration varies from the specified configuration, representing a.v variation in power supply (V in the offset specification versus.v in the application) and a.v variation in common-mode voltage from the specified V S /. Calculation of the worst-case expected offset would be as follows: Adjusted V OS = Maximum specified V OS + (power-supply variation) PSRR + (common-mode variation) CMRR V OS =.mv + (.V µv) + (.V µv) = ±.mv However, the typical value will be smaller, as seen in the Typical Characteristics. FEEDBACK CAPACITOR IMPROVES RESPONSE For optimum settling time and stability with high-impedance feedback networks, it may be necessary to add a feedback capacitor across the feedback resistor, R F, as shown in Figure. This capacitor compensates for the zero created by the feedback network impedance and the INA s -pin input capacitance (and any parasitic layout capacitance). The effect becomes more significant with higher impedance networks. Also, R X and C L can be added to reduce highfrequency noise. V IN + INA R IN V+ Shutdown C IN FIGURE. Feedback Capacitor Improves Dynamic Performance. It is suggested that a variable capacitor be used for the feedback capacitor since input capacitance may vary between instrumentation amplifiers, and layout capacitance is difficult to determine. For the circuit shown in Figure, the value of the variable feedback capacitor should be chosen by the following equation: R IN C IN = R F C F RIN CIN = RF CF Where C IN is equal to the INA s input capacitance (approximately pf) plus any parastic layout capacitance. Where C IN is equal to the INA s -pin input capacitance (typically pf) plus the layout capacitance. The capacitor can be varied until optimum performance is obtained. R F C F R X C L INA, INA SBOSC
APPLICATION CIRCUITS MEDICAL ECG APPLICATIONS Figure 9 shows the INA configured to serve as a low-cost ECG amplifier, suitable for moderate accuracy heart-rate applications such as fitness equipment. The input signals are obtained from the left and right arms of the patient. The common-mode voltage is set by two MΩ resistors. This potential through a buffer provides an optional right leg drive. Filtering can be modified to suit application needs by changing the capacitor value of the output filter. LOW-POWER, SINGLE-SUPPLY DATA ACQUISITION SYSTEMS Refer to Figure to see the INA configured to drive an ADS. Functioning at frequencies of up to khz, the INA is ideal for low-power data acquisition. OPA V R.µF.nF Left Arm Right Arm Shield kω kω V IN + V+ Shutdown INA V R MΩ kω kω MΩ OPA PUT +V MΩ MΩ MΩ kω V R = +.V kω OPA Shield Drive kω 9kΩ V R OPA Right Leg FIGURE 9. Simplified ECG Circuit for Medical Applications. INA, INA SBOSC
PACKAGE OPTION ADDENDUM -Jun- PACKAGING INFORMATION Orderable Device Status () Package Type Package Drawing Pins Package Qty Eco Plan INAAIPWR ACTIVE TSSOP PW Green (RoHS & no Sb/Br) INAAIPWT ACTIVE TSSOP PW Green (RoHS & no Sb/Br) INAAIDGKR ACTIVE VSSOP DGK Green (RoHS & no Sb/Br) INAAIDGK ACTIVE VSSOP DGK Green (RoHS & no Sb/Br) INAAIDGKT ACTIVE VSSOP DGK Green (RoHS & no Sb/Br) INAAIDGKTG ACTIVE VSSOP DGK Green (RoHS & no Sb/Br) INAIDGKR ACTIVE VSSOP DGK Green (RoHS & no Sb/Br) INAIDGK ACTIVE VSSOP DGK Green (RoHS & no Sb/Br) INAIDGKT ACTIVE VSSOP DGK Green (RoHS & no Sb/Br) INAIDGKTG ACTIVE VSSOP DGK Green (RoHS & no Sb/Br) () Lead/Ball Finish () MSL Peak Temp () Op Temp ( C) CU NIPDAU Level--C- YEAR - to INA A CU NIPDAU Level--C- YEAR - to INA A CU NIPDAUAG Level--C- YEAR - to C CU NIPDAUAG Level--C- YEAR - to C CU NIPDAUAG Level--C- YEAR - to C CU NIPDAUAG Level--C- YEAR - to C CU NIPDAUAG Level--C- YEAR - to C CU NIPDAUAG Level--C- YEAR - to C CU NIPDAUAG Level--C- YEAR - to C CU NIPDAUAG Level--C- YEAR - to C Device Marking (/) Samples () The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. () Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http:///productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all substances, including the requirement that lead not exceed.% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either ) lead-based flip-chip solder bumps used between the die and package, or ) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed.% by weight in homogeneous material) Addendum-Page
PACKAGE OPTION ADDENDUM -Jun- () MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. () There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. () Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. () Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page
PACKAGE MATERIALS INFORMATION -Jan- TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W (mm) A (mm) B (mm) K (mm) P (mm) W (mm) Pin Quadrant INAAIPWR TSSOP PW...9.... Q INAAIPWT TSSOP PW...9.... Q INAAIDGKR VSSOP DGK....... Q INAAIDGKT VSSOP DGK....... Q INAIDGKR VSSOP DGK....... Q INAIDGKT VSSOP DGK....... Q Pack Materials-Page
PACKAGE MATERIALS INFORMATION -Jan- *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) INAAIPWR TSSOP PW... INAAIPWT TSSOP PW... INAAIDGKR VSSOP DGK... INAAIDGKT VSSOP DGK... INAIDGKR VSSOP DGK... INAIDGKT VSSOP DGK... Pack Materials-Page
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