TJA General description. 2. Features and benefits. High-speed CAN transceiver. 2.1 General
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1 Rev April 2013 Product data sheet 1. General description The is a high-speed CAN transceiver that provides an interface between a Controller Area Network (CAN) protocol controller the physical two-wire CAN bus. The transceiver is designed for high-speed (up to 1 Mbit/s) CAN applications in the automotive industry, providing differential transmit receive capability to (a microcontroller with) a CAN protocol controller. The belongs to the third generation of high-speed CAN transceivers from NXP Semiconductors, offering significant improvements over first- second-generation devices such as the TJA1041A. It offers improved ElectroMagnetic Compatibility (EMC) ElectroMagnetic Discharge (ESD) performance, very low power consumption, passive behavior when the supply voltage is turned off. Advanced features include: Low-power management controls the power supply throughout the node while supporting local remote wake-up with wake-up source recognition Several protection diagnostic functions including bus line short-circuit detection battery connection detection Can be interfaced directly to microcontrollers with supply voltages from 3 V to 5 V These features make the the ideal choice for high speed CAN networks containing nodes that need to be available all times, even when the internal V IO V CC supplies are switched off. 2. Features benefits 2.1 General Fully ISO ISO compliant Suitable for 12 V 24 V systems Low ElectroMagnetic Emission (EME) high ElectroMagnetic Immunity (EMI) V IO input allows for direct interfacing with 3 V 5 V microcontrollers SPLIT voltage output for stabilizing the recessive bus level Listen-only mode for node diagnosis failure containment Available in SO14 HVSON14 packages Leadless HVSON14 package (3.0 mm 4.5 mm) with improved Automated Optical Inspection (AOI) capability Dark green product (halogen free Restriction of Hazardous Substances (RoHS) compliant)
2 2.2 Low-power management Very low current Stby Sleep modes, with local remote wake-up Capability to power down the entire node while supporting local, remote host wake-up Wake-up source recognition Transceiver disengages from the bus (zero load) when V BAT absent Functional behavior predictable under all supply conditions 2.3 Protection diagnosis (detection signalling) 3. Quick reference data High ESD hling capability on the bus pins Bus pins V BAT protected against transients in automotive environments Transmit Data (TXD) dominant time-out function with diagnosis TXD-to-RXD short-circuit hler with diagnosis Thermal protection with diagnosis Undervoltage detection recovery on pins V CC, V IO V BAT Bus line short-circuit diagnosis Bus dominant clamping diagnosis Cold start diagnosis (first battery connection) Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V CC supply voltage V V V uvd(vcc) undervoltage detection voltage on pin V CC I CC supply current Normal mode; bus dominant ma Normal or Listen-only mode; bus ma recessive Stby or Sleep mode A V ESD electrostatic discharge voltage IEC at pins CANH CANL kv V CANH voltage on pin CANH no time limit; DC limiting value V V CANL voltage on pin CANL no time limit; DC limiting value V T vj virtual junction temperature C 4. Ordering information Table 2. Ordering information Type number Package Name Description Version T SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 TK HVSON14 plastic, thermal enhanced very thin small outline package; no leads; 14 terminals; body mm SOT All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
3 5. Block diagram V IO V CC V BAT V CC TEMPERATURE PROTECTION 13 CANH TXD 1 V IO TIME-OUT SLOPE CONTROL + DRIVER 12 CANL V BAT WAKE ERR_N STB_N MODE CONTROL + WAKE-UP CONTROL + ERROR DETECTION SPLIT V BAT 11 7 SPLIT INH EN 6 RXD 4 MUX + DRIVER WAKE-UP FILTER 2 GND 015aaa061 Fig 1. Block diagram All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
4 6. Pinning information 6.1 Pinning TXD 1 14 STB_N terminal 1 index area TXD 1 14 STB_N GND 2 13 CANH GND 2 13 CANH V CC 3 12 CANL V CC 3 12 CANL RXD 4 T 11 SPLIT RXD 4 TK 11 SPLIT V IO 5 10 V BAT V IO 5 10 V BAT EN 6 9 WAKE EN 6 9 WAKE INH 7 8 ERR_N INH 7 8 ERR_N 015aaa aaa376 Fig 2. Pin configuration diagram: SO14 Fig 3. Pin configuration diagram: HVSON Pin description 7. Functional description Table 3. Pin description Symbol Pin Description TXD 1 transmit data input GND [1] 2 ground supply V CC 3 transceiver supply voltage RXD 4 receive data output; reads out data from the bus lines V IO 5 supply voltage for I/O level adaptor EN 6 enable control input INH 7 inhibit output for switching external voltage regulators ERR_N 8 error power-on indication output (active LOW) WAKE 9 local wake-up input V BAT 10 battery supply voltage SPLIT 11 common-mode stabilization output CANL 12 LOW-level CAN bus line CANH 13 HIGH-level CAN bus line STB_N 14 stby control input (active LOW) [1] For enhanced thermal electrical performance, the exposed center pad of the HVSON14 package should be soldered to board ground ( not to any other voltage level). The is a st-alone high-speed CAN transceiver with a number of operating modes, fail-safe features diagnostic features that offer enhanced system reliability advanced power management. The transceiver combines the functionality of the All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
5 TJA1041A with improved EMC ESD capability quiescent current performance. Improved slope control high DC hling capability on the bus pins provide additional application flexibility. 7.1 Operating modes The supports five operating modes. Control pins STB_N EN are used to select the operating mode. Switching between modes allows access to a number of diagnostics flags via pin ERR_N. Table 4 describes how to switch between modes. Figure 4 illustrates the mode transitions when V CC, V IO V BAT are valid. Table 4. Operating mode selection Internal flags Control pins Operating mode Pin INH UV [1] NOM UV BAT Wake [2] STB_N [3] EN From Normal, Listen-only, Stby Go-to-Sleep modes set X X X X Sleep mode floating cleared set X HIGH X Stby mode HIGH cleared X set LOW X Stby mode HIGH cleared X cleared LOW LOW Stby mode HIGH cleared X cleared LOW HIGH Go-to-Sleep mode [4] HIGH [4] cleared cleared X HIGH LOW Listen-only mode HIGH cleared cleared X HIGH HIGH Normal mode HIGH From Sleep mode set X X X X Sleep mode floating cleared set X HIGH X Stby mode HIGH cleared X set LOW X Stby mode HIGH cleared X cleared LOW X Sleep mode floating cleared cleared X HIGH LOW Listen-only mode HIGH cleared cleared X HIGH HIGH Normal mode HIGH [1] Setting the UV NOM flag will clear the WAKE flag. [2] Setting the Wake flag will clear the UV NOM flag. [3] A LOW-to-HIGH transition on pin STB_N will clear the UV NOM flag [4] After the minimum hold time, in Go-to-Sleep mode, t h(min), the transceiver will enter Sleep mode pin INH will be set floating. All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
6 STB_N = H EN = H LISTEN- ONLY MODE STB_N = H EN = L NORMAL MODE STB_N = H EN = L STB_N = H EN = L STB_N = H EN = H STB_N = H EN = H STB_N = L (EN = L or Wake flag set) STB_N = L EN = L STB_N = L EN = H Wake flag cleared STB_N = L EN = H STANDBY MODE STB_N = L EN = H Wake flag cleared GO-TO-SLEEP MODE STB_N = H EN = L STB_N = L Wake flag set STB_N = L (EN = L or Wake flag set) SLEEP MODE Wake flag cleared t > t h(min) STB_N = H EN = H LEGEND: = H, = L logical state of pin 015aaa063 Fig 4. Mode transitions when valid V CC, V IO V BAT voltages are present Normal mode In Normal mode, the transceiver can transmit receive data via the bus lines CANH CANL (see Figure 1 for the block diagram). The differential receiver converts the analog data on the bus lines into digital data which is output to pin RXD. The slope of the output signals on the bus lines is controlled optimized in a way that guarantees the lowest possible EME. The bus pins are biased to 0.5V CC (via R i ). Pin INH is active, so voltage regulators controlled by pin INH (see Figure 7) will be active too Listen-only mode In Listen-only mode, the transceiver s transmitter is disabled, effectively providing a transceiver listen-only feature. The receiver will still convert the analog bus signal on pins CANH CANL into digital data, available for output on pin RXD. As in Normal mode, the bus pins are biased at 0.5V CC pin INH remains active. All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
7 7.1.3 Stby mode Stby mode is the s first-level power saving mode, offering reduced current consumption. In Stby mode, the transceiver is unable to transmit or receive data the low-power receiver is activated to monitor bus activity. The bus pins are biased at ground level (via R i ). Pin INH is still active, so voltage regulators controlled by this pin will also be active. Pins RXD ERR_N will reflect any active wake-up requests (provided that V IO V BAT are present) Go-to-Sleep mode Go-to-Sleep mode is the controlled route for entering Sleep mode. In Go-to-Sleep mode, the transceiver behaves as in Stby mode, with the addition that a go-to-sleep comm is issued to the transceiver. The transceiver will remain in Go-to-Sleep mode for the minimum hold time (t h(min) ) before entering Sleep mode. The transceiver will not enter Sleep mode if the state of pin STB_N or pin EN is changed or if the Wake flag is set before t h(min) has elapsed Sleep mode Sleep mode is the s second-level power saving mode. Sleep mode is entered via Go-to-Sleep mode, also when the undervoltage detection time on either V CC or V IO elapses before the relevant voltage level has recovered. In Sleep mode, the transceiver behaves as described for Stby mode, with the exception that pin INH is set floating. Voltage regulators controlled by this pin will be switched off, the current into pin V BAT will be reduced to a minimum. Pins STB_N, EN the Wake flag can be used to wake up a node from Sleep mode (see Table 4). 7.2 Internal flags The makes use of seven internal flags for its fail-safe fallback mode control system diagnosis support. Five of these flags can be polled by the controller via pin ERR_N. Which flag is available on pin ERR_N at any time depends on the active operating mode on a number of other conditions. Table 5 describes how to access these flags. Table 5. Accessing internal flags via pin ERR_N Internal Flag is available on pin ERR_N [1] Flag is cleared flag UV NOM no by setting the Pwon or Wake flags, by a LOW-to-HIGH transition on STB_N or when both V IO V BAT have recovered. UV BAT no when V BAT has recovered Pwon in Listen-only mode (coming from Stby on entering Normal mode mode, Go-to-Sleep mode, or Sleep mode) Wake in Stby mode, Go-to-Sleep mode, Sleep mode (provided that V IO V BAT are present) on entering Normal mode or by setting the UV NOM flag All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
8 Table 5. Internal flag Wake-up source Bus failure [1] Pin ERR_N is an active-low output, so a LOW-level indicates a set flag a HIGH-level indicates a cleared flag. Allow pin ERR_N to stabilize for at least 8 s after changing operating modes. [2] Allow for a TXD dominant time of at least 4 s per dominant-recessive cycle UV NOM flag Accessing internal flags via pin ERR_N continued Flag is available on pin ERR_N [1] Flag is cleared in Normal mode (before the fourth dominant-to-recessive edge on pin TXD [2] ) in Normal mode (after the fourth dominant-to-recessive edge on pin TXD [2] ) Local failure in Listen-only mode (coming from Normal mode) on leaving Normal mode on re-entering Normal mode or by setting the Pwon flag on entering Normal mode or when RXD is dominant while TXD is recessive (provided that all local failures are resolved) or by setting the Pwon flag UV NOM is the V CC V IO undervoltage detection flag. The flag is set when the voltage on pin V CC drops below the V CC undervoltage detection voltage, V uvd(vcc), for longer than the undervoltage detection time, t det(uv), or when the voltage on pin V IO drops below V uvd(vio) for longer than t det(uv). When the UV NOM flag is set, the transceiver enters Sleep mode to save power to ensure the bus is not disturbed. In Sleep mode the voltage regulators connected to pin INH are disabled, avoiding any extra power consumption that might be generated as a result of a short-circuit condition. Any wake-up request, setting the Pwon flag or a LOW-to-HIGH transition on STB_N will clear UV NOM the timers, allowing the voltage regulators to be reactivated (at least until UV NOM is set again). UV NOM will also be cleared if both V CC V IO recover for longer than the undervoltage recovery time, t rec(uv). The transceiver will then switch to the operating mode indicated by the logic levels on pins STB_N EN (see Table 4) UV BAT flag UV BAT is the V BAT undervoltage detection flag. This flag is set when the voltage on pin V BAT drops below V uvd(vbat). When UV BAT is set, the transceiver will try to enter Stby mode to save power will disengage from the bus (zero load). UV BAT is cleared when the voltage on pin V BAT recovers. The transceiver will then switch to the operating mode indicated by the logic levels on pins STB_N EN (see Table 4) Pwon flag Pwon is the V BAT power-on flag. This flag is set when the voltage on pin V BAT recovers after previously dropping below V uvd(vbat) (usually because the battery was disconnected). Setting the Pwon flag clears the UV NOM flag timers. The Wake Wake-up source flags are set to ensure consistent system power-up under all supply conditions. In Listen-only mode the Pwon flag can be polled via pin ERR_N (see Table 5). The flag is cleared when the transceiver enters Normal mode Wake flag The Wake flag is set when the transceiver detects a local or remote wake-up request. A local wake-up request is detected when the logic level on pin WAKE changes, the new level remains stable for at least t wake. A remote wake-up request is triggered by two bus dominant states of at least t wake(busdom), with the first dominant state followed by a All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
9 recessive state of at least t wake(busrec) (provided the complete dominant-recessive-dominant pattern is completed within t to(wake)bus ). The Wake flag can be set in Stby mode, Go-to-Sleep mode or Sleep mode. Setting the Wake flag clears the UV NOM flag timers. Once set, the Wake flag status is immediately available on pins ERR_N RXD (provided V IO V BAT are present). This flag is also set at power-on cleared when the UV NOM flag is set or the transceiver enters Normal mode Wake-up source flag Wake-up source recognition is provided via the Wake-up source flag, which is set when the Wake flag is set by a local wake-up request via the WAKE pin. The Wake-up source flag can be polled via the ERR_N pin in Normal mode (see Table 5). This flag is also set at power-on cleared when the transceiver leaves Normal mode Bus failure flag The Bus failure flag is set if the transceiver detects a bus line short-circuit condition to V BAT, V CC or GND during four consecutive dominant-recessive cycles on pin TXD, while trying to drive the bus lines dominant. The Bus failure flag can be polled via the ERR_N pin in Normal mode (see Table 5). This flag is cleared at power-on or when the transceiver re-enters Normal mode Local failure flag In Normal Listen-only modes, the transceiver can distinguish four different local failure events, any of which will cause the Local failure flag to be set. The four local failure events are: TXD dominant clamping, TXD-to-RXD short circuit, bus dominant clamping an overtemperature event. The nature detection of these local failures is described in Section 7.3. The Local failure flag can be polled via the ERR_N pin in Listen-only mode (see Table 5). This flag is cleared at power-on, when entering Normal mode or when RXD is dominant while TXD is recessive, provided that all local failures have been resolved. 7.3 Local failures The can detect four different local failure conditions. Any of these failures will set the Local failure flag, in most cases the transmitter of the transceiver will be disabled TXD dominant clamping detection A permanent LOW level on pin TXD (due to a hardware or software application failure) would drive the CAN bus into a permanent dominant state, blocking all network communications. The TXD dominant time-out function prevents such a network lock-up by disabling the transmitter if pin TXD remains LOW for longer than the TXD dominant time-out time t to(dom)txd. The t to(dom)txd timer defines the minimum possible bit rate of 40 kbit/s. The transmitter remains disabled until the Local failure flag has been cleared TXD-to-RXD short-circuit detection A short-circuit between pins RXD TXD would lock the bus in a permanent dominant state once it had been driven dominant, because the low-side driver of RXD is typically stronger than the high-side driver of the controller connected to TXD. TXD-to-RXD short-circuit detection prevents such a network lock-up by disabling the transmitter. The transmitter remains disabled until the Local failure flag has been cleared. All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
10 7.3.3 Bus dominant clamping detection A CAN bus short circuit (to V BAT, V CC or GND) or a failure in one of the other network nodes could result in a differential voltage on the bus high enough to represent a bus dominant state. Because a node will not start transmission if the bus is dominant, the normal bus failure detection will not detect this failure, but the bus dominant clamping detection will. The Local failure flag is set if the dominant state on the bus persists for longer than t to(dom)bus. By checking this flag, the controller can determine if a clamped bus is blocking network communications. There is no need to disable the transmitter. Note that the Local failure flag does not retain a bus dominant clamping failure, is released as soon as the bus returns to recessive state Overtemperature detection If the junction temperature becomes excessive, the transmitter will shut down in time to protect the output drivers from overheating without compromising the maximum operating temperature. The transmitter will remain disabled until the Local failure flag has been cleared. 7.4 SPLIT pin Using the SPLIT pin on the in conjunction with a split termination network (see Figure 5 Figure 7) can help to stabilize the recessive voltage level on the bus. This will reduce EME in networks with DC leakage to ground (e.g. from deactivated nodes with poor bus leakage performance). In Normal Listen-only modes, pin SPLIT delivers a DC output voltage of 0.5V CC. In Stby, Go-to-Sleep Sleep modes, pin SPLIT is floating. V CC CANH V SPLIT = 0.5V CC in normal mode pwon/listen-only mode; otherwise floating R R SPLIT CANL 60 Ω 60 Ω V SPLIT GND 015aaa064 Fig 5. Stabilization circuit application 7.5 V IO supply pin Pin V IO should be connected to the microcontroller supply voltage (see Figure 7). This will cause the signal levels of pins TXD, RXD, STB_N, EN ERR_N to be adjusted to the I/O levels of the microcontroller, facilitating direct interfacing without the need for glue logic. All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
11 7.6 WAKE pin A local wake-up event is triggered by a LOW-to-HIGH or HIGH-to-LOW transition on the WAKE pin, allowing for maximum flexibility when designing a local wake-up circuit.to minimize current consumption, the internal bias voltage will follow the logic state on the pin after a delay of t wake. A HIGH level on pin WAKE is followed by an internal pull-up to V BAT. A LOW level on pin WAKE is followed by an internal pull-down towards GND. In applications that don t make use of the local wake-up facility, it is recommended that the WAKE pin be connected to V BAT or GND to ensure optimal EMI performance. All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
12 8. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V BAT battery supply voltage no time limit V load dump - 58 V V x voltage on pin x no time limit; DC value on pins CANH, CANL SPLIT V on pins INH WAKE V on pins V CC, V IO, TXD, RXD, STB_N, EN, V ERR_N I WAKE current on pin WAKE DC value - 15 ma V trt transient voltage on pins CANH, CANL, SPLIT V BAT [1] V V ESD electrostatic discharge IEC [2] voltage at pins CANH CANL [3] 8 +8 kv [1] Verified by an external test house to ensure pins CANH, CANL, SPLIT V BAT can withst ISO 7637 part 3 automotive transient test pulses 1, 2a, 3a 3b. [2] IEC (150 pf, 330 ); direct coupling. [3] ESD performance of pins CANH CANL according to IEC (150 pf, 330 ) has been verified by an external test house. The result is equal to or better than 8 kv (unaided). [4] Human Body Model (HBM): according to AEC-Q (100 pf, 1.5 k ). [5] Machine Model (MM): according to AEC-Q (200 pf, 0.75 H, 10 ). [6] Charged Device Model (CDM): according to AEC-Q (field Induced charge; 4 pf); grade C3B. [7] In accordance with IEC An alternative definition of virtual junction temperature is: T vj =T amb +P R th(vj-a), where R th(vj-a) is a fixed value to be used for the calculation of T vj. The rating for T vj limits the allowable combinations of power dissipation (P) ambient temperature (T amb ). 9. Thermal characteristics HBM [4] at pins CANH CANL 8 +8 kv at any other pin 4 +4 kv MM [5] at any pin V CDM [6] at corner pins V at any pin V T vj virtual junction temperature [7] C T stg storage temperature C Table 7. Thermal characteristics Value determined for free convection conditions on a JEDEC 2S2P board. Symbol Parameter Conditions Typ Unit R th(vj-a) thermal resistance from virtual junction to ambient SO14 package; in free air 68 K/W HVSON14 package; in free air 44 K/W All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
13 10. Static characteristics V BAT or V CC > 4.5 V Table 8. Static characteristics V CC = 4.5 V to 5.5 V; V IO = 2.8 V to V CC ; V BAT =4.5Vto40V; R L =60 ; T vj = 40 C to+150 C; unless otherwise specified; all voltages are defined with respect to ground; positive currents flow into the device [1]. Symbol Parameter Conditions Min Typ Max Unit Supply pin V CC V CC supply voltage V V uvd(vcc) undervoltage detection V BAT > 4.5 V V voltage on pin V CC I CC supply current Normal mode; V TXD = 0 V (dominant) ma Normal or Listen-only mode; ma V TXD =V IO (recessive) Stby or Sleep mode; V BAT > V CC A I/O level adapter supply; pin V IO V IO supply voltage on pin V IO V V uvd(vio) undervoltage detection V voltage on pin V IO I IO supply current on pin V IO Normal mode; V TXD = 0 V (dominant) A Normal or Listen-only mode; A V TXD =V IO (recessive) Stby or Sleep mode A Supply pin V BAT V BAT battery supply voltage V V uvd(vbat) undervoltage detection V voltage on pin V BAT I BAT battery supply current Normal or Listen-only mode A Stby mode; V CC >4.5V A V INH =V WAKE =V BAT Sleep mode; V INH =V CC =V IO =0V; A V WAKE =V BAT CAN transmit data input; pin TXD V IH HIGH-level input voltage 0.7V IO - V IO +0.3 V V IL LOW-level input voltage V IO V I IH HIGH-level input current V TXD =V IO A I IL LOW-level input current Normal mode; V TXD = 0 V A C i input capacitance not tested pf CAN receive data output; pin RXD I OH HIGH-level output current V RXD =V IO 0.4 V; V IO =V CC ma I OL LOW-level output current V RXD = 0.4 V; V TXD =V IO ; ma bus dominant Stby enable control inputs; pins STB_N EN V IH HIGH-level input voltage 0.7V IO - V IO +0.3 V V IL LOW-level input voltage V IO V I IH HIGH-level input current V STB_N =V EN =0.7V IO A All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
14 Table 8. Static characteristics continued V CC = 4.5 V to 5.5 V; V IO = 2.8 V to V CC ; V BAT =4.5Vto40V; R L =60 ; T vj = 40 C to+150 C; unless otherwise specified; all voltages are defined with respect to ground; positive currents flow into the device [1]. Symbol Parameter Conditions Min Typ Max Unit I IL LOW-level input current V STB_N =V EN =0V A Error power-on indication output; pin ERR_N I OH HIGH-level output current V ERR_N =V IO 0.4 V; V IO =V CC A I OL LOW-level output current V ERR_N = 0.4 V ma Local wake-up input; pin WAKE I IH HIGH-level input current V WAKE =V BAT 1.9 V A I IL LOW-level input current V WAKE =V BAT 3.1 V A V th threshold voltage V STB_N =0V V BAT 3 V BAT 2.5 V BAT 2 V Inhibit output; pin INH V H HIGH-level voltage drop I INH = 0.18 ma V I L leakage current Sleep mode A Bus lines; pins CANH CANL V O(dom) dominant output voltage V TXD =0V; t<t to(dom)txd pin CANH V pin CANL V V dom(tx)sym transmitter dominant V dom(tx)sym = V CC V CANH V CANL mv voltage symmetry V O(dif)bus bus differential output V TXD =0V; V CC = 4.75 V to 5.25 V; V voltage 45 <R L <65 ; dominant V TXD =V IO ; recessive; no load mv V O(rec) recessive output voltage Normal or Listen-only mode; 2 0.5V CC 3 V V TXD =V IO ; no load Stby or Sleep mode; no load V I O(sc) short-circuit output current V TXD = 0 V (dominant); V CC =5V pin CANH; V CANH =0V ma pin CANL; V CANL = 40 V ma I O(rec) recessive output current 27 V < V CAN <32V ma V th(rx)dif differential receiver V cm(can) = 30 V to +30 V [2] threshold voltage Normal or Listen-only mode V Stby or Sleep mode V V hys(rx)dif differential receiver hysteresis voltage Normal or Listen-only mode V cm(can) = 30 V to +30 V [2] mv I LI input leakage current V CC =0V; V CANH =V CANL = 5 V A V BAT =0V; V CANH =V CANL =5V A R i input resistance k R i input resistance deviation between V CANH V CANL % R i(dif) differential input resistance k C i(cm) common-mode input V TXD =V CC [3] pf capacitance C i(dif) differential input capacitance V TXD =V CC [3] pf All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
15 Table 8. Static characteristics continued V CC = 4.5 V to 5.5 V; V IO = 2.8 V to V CC ; V BAT =4.5Vto40V; R L =60 ; T vj = 40 C to+150 C; unless otherwise specified; all voltages are defined with respect to ground; positive currents flow into the device [1]. Symbol Parameter Conditions Min Typ Max Unit Common-mode stabilization output; pin SPLIT V O output voltage Normal or Listen-only mode; 500 A <I SPLIT < 500 A Normal or Listen-only mode R L =1M I L leakage current Stby or Sleep mode; 58 V < V SPLIT <+58V Temperature detection T j(sd) shutdown junction temperature [1] All parameters are guaranteed over the virtual junction temperature range by design. Factory testing uses correlated test conditions to cover the specified temperature power supply voltage range. [2] V cm(can) is the common mode voltage of CANH CANL. [3] Not tested in production; guaranteed by design. 11. Dynamic characteristics 0.3V CC 0.5V CC 0.7V CC V 0.45V CC 0.5V CC 0.55V CC V A [3] C Table 9. Dynamic characteristics; V CC = 4.5 V to 5.5 V; V IO = 2.8 V to V CC ; V BAT =4.5Vto40V; R L =60 ; T vj = 40 C to+150 C; unless otherwise specified; all voltages are defined with respect to ground; positive currents flow into the device [1]. Symbol Parameter Conditions Min Typ Max Unit Timing characteristics; Figure 6 t d(txd-busdom) delay time from TXD to bus dominant Normal mode ns t d(txd-busrec) delay time from TXD to bus recessive Normal mode ns t d(busdom-rxd) delay time from bus dominant to RXD Normal or Listen-only mode ns t d(busrec-rxd) delay time from bus recessive to Normal or Listen-only mode ns RXD t PD(TXD-RXD) propagation delay from TXD to RXD V STB_N = 0 V ns t det(uv) undervoltage detection time ms t rec(uv) undervoltage recovery time 1-5 ms t to(dom)txd TXD dominant time-out time V TXD =0V ms t to(dom)bus bus dominant time-out time V O(dif)(bus) > 0.9 V ms t h hold time from issuing go-to-sleep comm to s entering Sleep mode t wake(busdom) bus dominant wake-up time Stby or Sleep mode; V BAT =12V s t wake(busrec) bus recessive wake-up time Stby or Sleep mode; V BAT =12V s t to(wake)bus bus wake-up time-out time ms t wake wake-up time in response to a falling or rising edge on pin WAKE; Stby or Sleep mode s [1] All parameters are guaranteed over the virtual junction temperature range by design. Factory testing uses correlated test conditions to cover the specified temperature power supply voltage range. All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
16 HIGH TXD LOW CANH CANL dominant 0.9 V V O(dif)(bus) 0.5 V RXD 0.3V IO 0.7V IO recessive HIGH LOW t d(txd-busdom) t d(txd-busrec) t d(busdom-rxd) t d(busrec-rxd) t PD(TXD-RXD) t PD(TXD-RXD) 015aaa025 Fig 6. CAN transceiver timing diagram All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
17 12. Application information 3 V BAT 5 V WAKE GND V BAT V CC INH V IO V CC STB_N 14 9 EN 6 Port x, y, z 8 ERR_N MICRO- CONTROLLER RXD 4 2 RXD TXD TXD CANH SPLIT CANL CAN bus wires 015aaa060 Fig 7. Typical application with 3 V microcontroller All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
18 13. Test information V RXD HIGH LOW hysteresis V i(dif)(bus) (V) mgs378 Fig 8. Hysteresis of the receiver +12 V +5 V 47 μf 100 nf V IO V CC V BAT 10 μf TXD EN STB_N WAKE CANH 13 SPLIT 11 CANL 12 8 ERR_N R L 100 pf 7 INH 4 RXD 2 GND 15 pf 015aaa163 Fig 9. Test circuit for timing characteristics 13.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) stard Q100 Rev-G - Failure mechanism based stress test qualification for integrated circuits, is suitable for use in automotive applications. All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
19 14. Package outline SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 D E A X c y H E v M A Z 14 8 Q pin 1 index A 2 A 1 (A ) 3 θ A L p 1 7 L e b p w M detail X mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max A 1 A 2 A 3 b p c D (1) E (1) e H (1) E L L p Q v w y Z Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included θ o 8 o OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT E06 MS Fig 10. Package outline SOT108-1 (SO14) All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
20 HVSON14: plastic, thermal enhanced very thin small outline package; no leads; 14 terminals; body 3 x 4.5 x 0.85 mm SOT X D B A E A A 1 c terminal 1 index area detail X terminal 1 index area L 1 e e 1 b 7 k v w C C A B y 1 C C y E h 14 8 D h Dimensions mm scale Unit A A 1 b c D D h E E h e e 1 k L v w y y 1 mm max nom min sot Outline version References IEC JEDEC JEITA SOT MO European projection Issue date Fig 11. Package outline SOT1086 (HVSON14) All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
21 15. Hling information All input output pins are protected against ElectroStatic Discharge (ESD) under normal hling. When hling ensure that the appropriate precautions are taken as described in JESD625-A or equivalent stards. 16. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 Surface mount reflow soldering description Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches high densities that come with increased miniaturization Wave reflow soldering Wave soldering is a joining technology in which the joints are made by solder coming from a sting wave of liquid solder. The wave soldering process is suitable for the following: Through-hole components Leaded or leadless SMDs, which are glued to the surface of the printed circuit board Not all SMDs can be wave soldered. Packages with solder balls, some leadless packages which have solder ls underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement exposure to a temperature profile. Leaded packages, packages with solder balls, leadless packages are all reflow solderable. Key characteristics in both wave reflow soldering are: Board specifications, including the board finish, solder masks vias Package footprints, including solder thieves orientation The moisture sensitivity level of the packages Package placement Inspection repair Lead-free soldering versus SnPb soldering 16.3 Wave soldering Key characteristics in wave soldering are: All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
22 Process issues, such as application of adhesive flux, clinching of leads, board transport, the solder wave parameters, the time during which components are exposed to the wave Solder bath specifications, including temperature impurities 16.4 Reflow soldering Key characteristics in reflow soldering are: Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see Figure 12) than a SnPb process, thus reducing the process window Solder paste printing issues including smearing, release, adjusting the process window for a mix of large small components on one board Reflow temperature profile; this profile includes preheat, reflow (in which the board is heated to the peak temperature) cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages /or boards are not damaged. The peak temperature of the package depends on package thickness volume is classified in accordance with Table Table 10. SnPb eutectic process (from J-STD-020D) Package thickness (mm) Package reflow temperature ( C) Volume (mm 3 ) < < Table 11. Lead-free process (from J-STD-020D) Package thickness (mm) Package reflow temperature ( C) Volume (mm 3 ) < to 2000 > 2000 < to > Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 12. All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
23 temperature maximum peak temperature = MSL limit, damage level minimum peak temperature = minimum soldering temperature peak temperature time 001aac844 Fig 12. MSL: Moisture Sensitivity Level Temperature profiles for large small components For further information on temperature profiles, refer to Application Note AN10365 Surface mount reflow soldering description. 17. Soldering of HVSON packages Section 16 contains a brief introduction to the techniques most commonly used to solder Surface Mounted Devices (SMD). A more detailed discussion on soldering HVSON leadless package ICs can found in the following application notes: AN10365 Surface mount reflow soldering description AN10366 HVQFN application information All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
24 18. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes v Product data sheet - v.2 Modifications: Section 2.1: revised Added HVSON14 package (Table 2, Figure 3, Table 7, Figure 11) Table 3: table note section added Section 13.1 text revised Section 17: added v Product data sheet - v.1 v Product data sheet - - All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
25 19. Legal information 19.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) title. A short data sheet is intended for quick reference only should not be relied upon to contain detailed full information. For detailed full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification The information data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors its customer, unless NXP Semiconductors customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions qualities beyond those described in the Product data sheet Disclaimers Limited warranty liability Information in this document is believed to be accurate reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithsting any damages that customer might incur for any reason whatsoever, NXP Semiconductors aggregate cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications product descriptions, at any time without notice. This document supersedes replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors its suppliers accept no liability for inclusion /or use of NXP Semiconductors products in such equipment or applications therefore such inclusion /or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design operation of their applications products using NXP Semiconductors products, NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP Semiconductors product is suitable fit for the customer s applications products planned, as well as for the planned application use of customer s third party customer(s). Customers should provide appropriate design operating safeguards to minimize the risks associated with their applications products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications products using NXP Semiconductors products in order to avoid a default of the applications the products or of the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently irreversibly affect the quality reliability of the device. Terms conditions of commercial sale NXP Semiconductors products are sold subject to the general terms conditions of commercial sale, as published at unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer s general terms conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
26 No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values Characteristics sections of this document, as such is not complete, exhaustive or legally binding Trademarks Notice: All referenced brs, product names, service names trademarks are the property of their respective owners. 20. Contact information For more information, please visit: For sales office addresses, please send an to: [email protected] All information provided in this document is subject to legal disclaimers. NXP B.V All rights reserved. Product data sheet Rev April of 27
27 21. Contents 1 General description Features benefits General Low-power management Protection diagnosis (detection signalling) Quick reference data Ordering information Block diagram Pinning information Pinning Pin description Functional description Operating modes Normal mode Listen-only mode Stby mode Go-to-Sleep mode Sleep mode Internal flags UV NOM flag UV BAT flag Pwon flag Wake flag Wake-up source flag Bus failure flag Local failure flag Local failures TXD dominant clamping detection TXD-to-RXD short-circuit detection Bus dominant clamping detection Overtemperature detection SPLIT pin V IO supply pin WAKE pin Limiting values Thermal characteristics Static characteristics Dynamic characteristics Application information Test information Quality information Package outline Hling information Soldering of SMD packages Introduction to soldering Wave reflow soldering Wave soldering Reflow soldering Soldering of HVSON packages Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Contents Please be aware that important notices concerning this document the product(s) described herein, have been included in section Legal information. NXP B.V All rights reserved. For more information, please visit: For sales office addresses, please send an to: [email protected] Date of release: 24 April 2013 Document identifier:
TJA1043. 1. General description. 2. Features and benefits. High-speed CAN transceiver. 2.1 General
Rev. 4 19 January 2015 Product data sheet 1. General description The high-speed CAN transceiver provides an interface between a Controller Area Network (CAN) protocol controller and the physical two-wire
IP4234CZ6. 1. Product profile. Single USB 2.0 ESD protection to IEC 61000-4-2 level 4. 1.1 General description. 1.2 Features. 1.
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Rev. 8 12 July 2016 Product data sheet 1. General description The is a high-speed CAN transceiver that provides an interface between a Controller Area Network (CAN) protocol controller and the physical
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10 ma LED driver in SOT457
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SiGe:C Low Noise High Linearity Amplifier
Rev. 2 21 February 2012 Product data sheet 1. Product profile 1.1 General description The is a low noise high linearity amplifier for wireless infrastructure applications. The LNA has a high input and
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Rev. 6 18 November 2010 Product data sheet 1. Product profile 1.1 General description The is a sensitive magnetic field sensor, employing the magneto-resistive effect of thin film permalloy. The sensor
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Rev. 10 21 March 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is an (parallel-to-serial converter) with a synchronous serial data input (DS), a clock
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Rev. 6 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C
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Rev. 7 10 September 2014 Product data sheet 1. General description The provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the
LIN-bus ESD protection diode
Rev. 3 31 May 2011 Product data sheet 1. Product profile 1.1 General description in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package designed to protect one automotive Local Interconnect
BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1.
Rev. 6 4 September 04 Product data sheet. Product profile. General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package Configuration
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Rev. 4 24 February 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is an octal positive-edge triggered D-type flip-flop. The device features clock (CP)
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Rev. 5 26 November 2015 Product data sheet 1. General description 2. Features and benefits The is a quad 2-input NOR gate. Inputs include clamp diodes. This enables the use of current limiting resistors
NPN wideband transistor in a SOT89 plastic package.
SOT89 Rev. 05 21 March 2013 Product data sheet 1. Product profile 1.1 General description in a SOT89 plastic package. 1.2 Features and benefits High gain Gold metallization ensures excellent reliability
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Rev. 7 29 February 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a. It decodes four binary weighted address inputs (A0 to A3) to sixteen mutually
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Rev. 4 27 January 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The decodes three binary weighted address inputs (A0, A1 and A2) to eight mutually exclusive
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Rev. 7 8 December 2015 Product data sheet 1. General description The is a hex unbuffered inverter. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to
8-bit binary counter with output register; 3-state
Rev. 3 24 February 2016 Product data sheet 1. General description The is an 8-bit binary counter with a storage register and 3-state outputs. The storage register has parallel (Q0 to Q7) outputs. The binary
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45 V, 100 ma NPN general-purpose transistors
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Rev. 8 25 March 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a with three oscillator terminals (RS, REXT and CEXT), ten buffered outputs (Q3 to
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Rev. 5 30 November 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a dual negative edge triggered JK flip-flop featuring individual J and K inputs,
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Rev. 5 27 October 20 Product data sheet. General description The provides six non-inverting buffers. The outputs are open-drain and can be connected to other open-drain outputs to implement active-low
The 74LVC1G04 provides one inverting buffer.
Rev. 12 6 ugust 2012 Product data sheet 1. General description The provides one inverting buffer. Input can be driven from either 3.3 V or 5 V devices. These features allow the use of these devices in
74HC165; 74HCT165. 8-bit parallel-in/serial out shift register
Rev. 4 28 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Applications 4. Ordering information The is an 8-bit serial or parallel-in/serial-out shift register. The device
Medium power Schottky barrier single diode
Rev. 03 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated
74HC138; 74HCT138. 3-to-8 line decoder/demultiplexer; inverting
Rev. 6 28 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The decodes three binary weighted address inputs (A0, A1 and A2) to eight mutually exclusive
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DISCRETE SEMICONDUCTORS DATA SHEET. dbook, halfpage M3D088. BB201 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Low-voltage variable capacitance double 2001 Oct 12 Low-voltage variable capacitance double FEATURES Excellent linearity C1: 95 pf; C7.5: 27.6
PMEG3005EB; PMEG3005EL
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Rev. 8 29 November 2012 Product data sheet 1. General description The provides the single D-type flip-flop with 3-state output. The flip-flop will store the state of data input (D) that meet the set-up
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PMEG2020EH; PMEG2020EJ
Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
PMEG3015EH; PMEG3015EJ
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74AUP1G74. 1. General description. 2. Features and benefits. Low-power D-type flip-flop with set and reset; positive-edge trigger
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40 V, 200 ma NPN switching transistor
Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic
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Rev. 04 30 December 2008 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for
IP4294CZ10-TBR. ESD protection for ultra high-speed interfaces
XSON1 Rev. 4 1 November 213 Product data sheet 1. Product profile 1.1 General description The device is designed to protect high-speed interfaces such as SuperSpeed USB, High-Definition Multimedia Interface
DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
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Rev. 11 29 June 2012 Product data sheet 1. General description The provides the non-inverting buffer. The output of this device is an open drain and can be connected to other open-drain outputs to implement
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Rev. 02 3 September 2007 Product data sheet 1. General description The provides a 3-input EXCLUSIVE-OR function. The input can be driven from either 3.3 or 5 V devices. This feature allows the use of these
DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors
DISCRETE SEMICONDUCTORS DATA SHEET Product specification April 24 Product specification GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
74HC573; 74HCT573. 1. General description. 2. Features and benefits. Octal D-type transparent latch; 3-state
Rev. 7 4 March 2016 Product data sheet 1. General description The is an 8-bit D-type transparent latch with 3-state outputs. The device features latch enable (LE) and output enable (OE) inputs. When LE
AMIS-42673. High-Speed 3.3 V Digital Interface CAN Transceiver
AMIS-43 High-Speed 3.3 V Digital Interface CAN Transceiver Description The AMIS 43 CAN transceiver is the interface between a controller area network (CAN) protocol controller and the physical bus. It
BLL6G1214L-250. 1. Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1.
BLL6G1214L-25 Rev. 1 16 February 212 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
74HC74; 74HCT74. 1. General description. 2. Features and benefits. 3. Ordering information
Rev. 5 3 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The 74HC74 and 74HCT74 are dual positive edge triggered D-type flip-flop. They have individual
BAS70 series; 1PS7xSB70 series
BAS70 series; PS7xSB70 series Rev. 09 January 00 Product data sheet. Product profile. General description in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package
Bus buffer/line driver; 3-state
Rev. 11 2 July 2012 Product data sheet 1. General description The provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). HIGH-level
How To Make An Electric Static Discharge (Esd) Protection Diode
Rev. 01 0 October 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device
8-bit synchronous binary down counter
Rev. 5 21 April 2016 Product data sheet 1. General description The is an 8-bit synchronous down counter. It has control inputs for enabling or disabling the clock (CP), for clearing the counter to its
2PD601ARL; 2PD601ASL
Rev. 01 6 November 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1.
BZT52H series. Single Zener diodes in a SOD123F package
Rev. 3 7 December 2010 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features
65 V, 100 ma PNP/PNP general-purpose transistor
Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
PUSB3FR4. 1. Product profile. ESD protection for ultra high-speed interfaces. 1.1 General description. 1.2 Features and benefits. 1.
XSON1 Rev. 1 26 January 215 Product data sheet 1. Product profile 1.1 General description The device is designed to protect high-speed interfaces such as SuperSpeed USB 3.1 at 1 Gbps, High-Definition Multimedia
74HC32; 74HCT32. 1. General description. 2. Features and benefits. Quad 2-input OR gate
Rev. 5 4 September 202 Product data sheet. General description The is a quad 2-input OR gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages
45 V, 100 ma NPN/PNP general-purpose transistor
Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
74HC4067; 74HCT4067. 16-channel analog multiplexer/demultiplexer
Rev. 6 22 May 2015 Product data sheet 1. General description The is a single-pole 16-throw analog switch (SP16T) suitable for use in analog or digital 16:1 multiplexer/demultiplexer applications. The switch
DISCRETE SEMICONDUCTORS DATA SHEET M3D848. CGD923 870 MHz, 20 db gain power doubler amplifier. Product specification 2002 Oct 08
DISCRETE SEMICONDUCTORS DATA SHEET M3D848 2002 Oct 08 FEATURES High output capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Gold metallization ensures
General purpose low power phase control General purpose low power switching Solid-state relay. Symbol Parameter Conditions Min Typ Max Unit V DRM
TO-92 May 25 Product data sheet. General description Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package intended to be interfaced directly to microcontrollers, logic integrated
74HC595; 74HCT595. 1. General description. 2. Features and benefits. 3. Applications
8-bit serial-in, serial or parallel-out shift register with output latches; 3-state Rev. 8 25 February 2016 Product data sheet 1. General description The is an 8-bit serial-in/serial or parallel-out shift
Silicon temperature sensors. Other special selections are available on request.
Rev. 05 25 April 2008 Product data sheet 1. Product profile 1.1 General description The temperature sensors in the have a positive temperature coefficient of resistance and are suitable for use in measurement
Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package
TO-220AC 27 May 2015 Product data sheet 1. General description Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package 2. Features and benefits Fast switching Low thermal resistance
NCV7341. High Speed Low Power CAN Transceiver
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74ALVC164245. 16-bit dual supply translating transceiver; 3-state. This device can be used as two 8-bit transceivers or one 16-bit transceiver.
Rev. 8 15 March 2012 Product data sheet 1. General description The is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. The is a 16-bit
30 V, single N-channel Trench MOSFET
SOT883B Rev. 1 11 May 212 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN16B-3 (SOT883B) Surface-Mounted
Single-channel common-mode filter with integrated ESD protection network
Single-channel common-mode filter with integrated ESD protection network Rev. 2 29 May 2013 Product data sheet 1. Product profile 1.1 General description 2-lines (one differential channel) common-mode
DATA SHEET. PMEGXX10BEA; PMEGXX10BEV 1 A very low V F MEGA Schottky barrier rectifier DISCRETE SEMICONDUCTORS
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PCA9509. 1. General description. 2. Features and benefits. Level translating I 2 C-bus/SMBus repeater
Rev. 7 4 November 2014 Product data sheet 1. General description The is a level translating I 2 C-bus/SMBus repeater that enables processor low voltage 2-wire serial bus to interface with standard I 2
SA58631. 1. General description. 2. Features. 3. Applications. 3 W BTL audio amplifier
Rev. 2 2 October 27 Product data sheet. General description 2. Features 3. Applications The is a one channel audio amplifier in an HVSON8 package. It provides power output of 3 W with an 8 Ω load at 9
74HC123; 74HCT123. Dual retriggerable monostable multivibrator with reset
Rev. 9 19 January 2015 Product data sheet 1. General description The are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with
74HC595; 74HCT595. 1. General description. 2. Features and benefits. 3. Applications
8-bit serial-in, serial or parallel-out shift register with output latches; 3-state Rev. 7 26 January 2015 Product data sheet 1. General description The are high-speed Si-gate CMOS devices and are pin
BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
65 V, 00 ma NPN general-purpose transistors Rev. 07 7 November 009 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
