PCA General description. 2. Features and benefits. Level translating I 2 C-bus/SMBus repeater
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1 Rev. 7 4 November 2014 Product data sheet 1. General description The is a level translating I 2 C-bus/SMBus repeater that enables processor low voltage 2-wire serial bus to interface with standard I 2 C-bus or SMBus I/O. While retaining all the operating modes and features of the I 2 C-bus system during the level shifts, it also permits extension of the I 2 C-bus by providing bidirectional buffering for both the data (SDA) and the clock (SCL) lines, thus enabling the I 2 C-bus or SMBus maximum capacitance of 400 pf on the higher voltage side. Port A allows a voltage range from 1.35 V to V CC(B) 1.0 V and requires no external pull-up resistors due to the internal current source. Port B allows a voltage range from 3.0 V to 5.5 V and is overvoltage tolerant. Both port A and port B SDA and SCL pins are high-impedance when the is unpowered. For applications where Port A V CC(A) is less than 1.35 V or Port B V CC(B) is less than 3.0 V, use drop-in replacement A. The bus port B drivers are compliant with SMBus I/O levels, while port A uses a current sensing mechanism to detect the input or output LOW signal which prevents bus lock-up. Port A uses a 1 ma current source for pull-up and a 200 pull-down driver. This results in a LOW on the port A accommodating smaller voltage swings. The output pull-down on the port A internal buffer LOW is set for approximately 0.2 V, while the input threshold of the internal buffer is set about 50 mv lower than that of the output voltage LOW. When the port A I/O is driven LOW internally, the LOW is not recognized as a LOW by the input. This prevents a lock-up condition from occurring. The output pull-down on the port B drives a hard LOW and the input level is set at 0.3 of SMBus or I 2 C-bus voltage level which enables port B to connect to any other I 2 C-bus devices or buffer. The drivers are not enabled unless V CC(A) is above 0.8 V and V CC(B) is above 2.5 V. The enable (EN) pin can also be used to turn on and turn off the drivers under system control. Caution should be observed to change only the state of the EN pin when the bus is idle. 2. Features and benefits Bidirectional buffer isolates capacitance and allows 400 pf on port B of the device Voltage level translation from port A (1.35 V to V CC(B) 1.0 V) to port B (3.0 V to 5.5 V) Requires no external pull-up resistors on lower voltage port A Active HIGH repeater enable input Open-drain inputs/outputs Lock-up free operation Supports arbitration and clock stretching across the repeater Accommodates Standard-mode and Fast-mode I 2 C-bus devices and multiple masters
2 3. Ordering information Powered-off high-impedance I 2 C-bus pins Operating supply voltage range of 1.35 V to V CC(B) 1.0 V on port A, 3.0 V to 5.5 V on port B 5 V tolerant port B SCL, SDA and enable pins 0 Hz to 400 khz clock frequency Remark: The maximum system operating frequency may be less than 400 khz because of the delays added by the repeater. ESD protection exceeds 2000 V HBM per JESD22-A114 and 1000 V CDM per JESD22-C101 Latch-up testing is done to JEDEC Standard JESD78 which exceeds 100 ma Packages offered: TSSOP8, SO8, XQFN8 Table 1. Ordering information Type number Topside Package marking Name Description Version D SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 DP 9509 TSSOP8 plastic thin shrink small outline package; 8 leads; body width 3 mm SOT505-1 GM P9X XQFN8 plastic, extremely thin quad flat package; no leads; 8 terminals; body mm SOT902-2 X changes based on date code. Table 2. Ordering options Type number Orderable part number 3.1 Ordering options Package Packing method Minimum order quantity D D,112 SO8 Standard marking *IC s tube - DSC bulk pack D,118 SO8 Reel 13 Q1/T1 *standard mark SMD DP DP,118 TSSOP8 Reel 13 Q1/T1 *standard mark SMD GM GM,125 XQFN8 Reel 7 Q3/T4 *standard mark Temperature 2000 T amb = 40 C to+85c 2500 T amb = 40 C to+85c 2500 T amb = 40 C to+85c 4000 T amb = 40 C to+85c All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
3 4. Functional diagram V CC(A) V CC(B) V CC(A) 1 ma A1 B1 V CC(A) 1 ma A2 B2 EN GND 002aac125 Fig 1. Functional diagram of All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
4 5. Pinning information 5.1 Pinning V CC(A) A1 A DP V CC(B) B1 B2 V CC(A) A1 A D V CC(B) B1 B2 GND 4 5 EN GND 4 5 EN 002aac aac127 Fig 2. Pin configuration for TSSOP8 Fig 3. Pin configuration for SO8 Fig 4. Pin configuration for XQFN8 5.2 Pin description Table 3. Pin description Symbol Pin Description V CC(A) 1 port A power supply A1 2 port A (lower voltage side) A2 3 port A (lower voltage side) GND 4 ground (0 V) EN 5 enable input (active HIGH) B2 6 port B (SMBus/I 2 C-bus side) B1 7 port B (SMBus/I 2 C-bus side) V CC(B) 8 port B power supply Port A and port B can be used for either SCL or SDA. All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
5 6. Functional description Refer to Figure 1 Functional diagram of. The enables I 2 C-bus or SMBus translation down to V CC(A) as low as 1.35 V without degradation of system performance. The contains 2 bidirectional open-drain buffers specifically designed to support up-translation/down-translation between the low voltage and 3.3 V SMBus or 5 V I 2 C-bus. The port B I/Os are over-voltage tolerant to 5.5 V even when the device is unpowered. The includes a power-up circuit that keeps the output drivers turned off until V CC(B) is above 2.5 V and the V CC(A) is above 0.8 V. V CC(B) and V CC(A) can be applied in any sequence at power-up. After power-up and with the EN pin HIGH, a LOW level on port A (below approximately 0.15 V) turns on the corresponding port B driver (either SDA or SCL) and drives port B down to about 0 V. When port A rises above approximately 0.15 V, the port B pull-down driver is turned off and the external pull-up resistor pulls the pin HIGH. When port B falls first and goes below 0.3V CC(B), the port A driver is turned on and port A pulls down to 0.2 V (typical). The port B pull-down is not enabled unless the port A voltage goes below V ILc. If the port A low voltage goes below V ILc, the port B pull-down driver is enabled until port A rises above approximately 0.15 V (V ILc ), then port B, if not externally driven LOW, continues to rise being pulled up by the external pull-up resistor. Remark: Ground offset between the ground and the ground of devices on port A of the must be avoided. The reason for this cautionary remark is that a CMOS/NMOS open-drain capable of sinking 3 ma of current at 0.4 V has an output resistance of 133 or less (R = E / I). Such a driver shares enough current with the port A output pull-down of the to be seen as a LOW as long as the ground offset is zero. If the ground offset is greater than 0 V, then the driver resistance must be less. Since V ILc can be as low as 90 mv at cold temperatures and the low end of the current distribution, the maximum ground offset should not exceed 50 mv. Bus repeaters that use an output offset are not interoperable with the port A of the as their output LOW levels will not be recognized by the as a LOW. If the is placed in an application where the V IL of port A of the does not go below its V ILc, it pulls port B LOW initially when port A input transitions LOW, but the port B returns HIGH, so it does not reproduce the port A input on port B. Such applications should be avoided. Port B is interoperable with all I 2 C-bus slaves, masters and repeaters. 6.1 Enable The EN pin is active HIGH and allows the user to select when the repeater is active. This can be used to isolate a badly behaved slave on power-up until after the system power-up reset. It should never change state during an I 2 C-bus operation because disabling during a bus operation hangs the bus and enabling part way through a bus cycle could confuse the I 2 C-bus parts being enabled. The enable pin should only change state when the bus and the repeater port are in an idle state to prevent system failures. All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
6 6.2 I 2 C-bus systems As with the standard I 2 C-bus system, pull-up resistors are required to provide the logic HIGH levels on the buffered bus (standard open-collector configuration of the I 2 C-bus). The size of these pull-up resistors depends on the system. Each of the port A I/Os has an internal pull-up current source and does not require the external pull-up resistor. Port B is designed to work with Standard-mode and Fast-mode I 2 C-bus devices in addition to SMBus devices. Standard-mode I 2 C-bus devices only specify 3 ma output drive; this limits the termination current to 3 ma in a generic I 2 C-bus system where Standard-mode devices and multiple masters are possible. Under certain conditions higher termination currents can be used. 7. Application design-in information A typical application is shown in Figure 5. In this example, the CPU is running on a 1.35 V I 2 C-bus while the master is connected to a 3.3 V bus. Both buses run at 400 khz. Master devices can be placed on either bus V 3.3 V 10 kω 10 kω V CC(A) V CC(B) SDA A1 B1 SDA SCL SCL MASTER CPU 10 kω 1.35 V A2 B2 SLAVE 400 khz EN bus A bus B 002aac128 Fig 5. Typical application When port B of the is pulled LOW by a driver on the I 2 C-bus, a CMOS hysteresis detects the falling edge when it goes below 0.3V CC(B) and causes the internal driver on port A to turn on, causing port A to pull down to about 0.2 V. When port A of the falls, first a comparator detects the falling edge and causes the internal driver on port B to turn on and pull the port B pin down to ground. In order to illustrate what would be seen in a typical application, refer to Figure 6 and Figure 7. If the bus master in Figure 5 were to write to the slave through the, waveforms shown in Figure 6 would be observed on the B bus. This looks like a normal I 2 C-bus transmission. On the A bus side of the, the clock and data lines are driven by the master and swing nearly to ground. After the eighth clock pulse, the slave replies with an ACK that causes a LOW on the A side equal to the V OL of the, which the master recognizes as a LOW. It is important to note that any arbitration or clock stretching events require that the LOW level on the A bus side at the input of the (V IL ) is below V ILc to be recognized by the and then transmitted to the B bus side. All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
7 Fig 6. Bus B SMBus/I 2 C-bus waveform Fig 7. Bus A lower voltage waveform 8. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V CC(B) supply voltage port B V V CC(A) supply voltage port A V V I/O voltage on an input/output pin port A V port B; enable pin (EN) V I I/O input/output current - 20 ma I I input current - 20 ma P tot total power dissipation mw T stg storage temperature C T amb ambient temperature operating in free air C T j junction temperature C T sp solder point temperature 10 s max C All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
8 9. Static characteristics Table 5. Static characteristics GND = 0 V; T amb = 40 C to+85c; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Supplies V CC(B) supply voltage port B V V CC(A) supply voltage port A GM V CC(B) 1 V V CC(A) supply voltage port A D and 1.0 [2] - V CC(B) 1 V DP I CC(A) supply current port A all port A static HIGH ma all port A static LOW ma I CC(B) supply current port B all port B static HIGH ma Input and output of port A (A1 to A2) V IH HIGH-level input voltage port A 0.7V CC(A) - V CC(A) V V IL LOW-level input voltage port A [3] V V ILc contention LOW-level input voltage [3] V V IK input clamping voltage I L = 18 ma V I LI input leakage current V I =V CC(A) A I IL LOW-level input current [4] ma V OL LOW-level output voltage V CC(A) =>1.35V to [5] V (V CC(B) 1V) V OL V ILc difference between LOW-level output [6] mv and LOW-level input voltage contention I LOH HIGH-level output leakage current V O =1.35V A C io input/output capacitance pf Input and output of port B (B1 to B2) V IH HIGH-level input voltage port B 0.7V CC(B) - V CC(B) V V IL LOW-level input voltage port B V CC(B) V V IK input clamping voltage I L = 18 ma V I LI input leakage current V I =3.6V A I IL LOW-level input current V I =0.2V A V OL LOW-level output voltage I OL =6mA V I LOH HIGH-level output leakage current V O =3.6V A C io input/output capacitance pf Enable V IL LOW-level input voltage V CC(A) V V IH HIGH-level input voltage 0.9V CC(A) - V CC(B) V I IL(EN) LOW-level input current on pin EN V I = 0.2 V, EN; A V CC =3.6V I LI input leakage current A C i input capacitance V I =3.0V or 0V pf Typical values with V CC(A) =1.35V, V CC(B) =5.0V. All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
9 [2] If the is not being enabled or disabled, the V CC(A) minimum is 0.95 V with a corresponding decrease in the I IL, which will drop below the minimum specification of 450 A at cold temperature (see Figure 8 and Figure 9). This will not significantly change the rise and fall times of the signals on port A since the I IL value represents the current source pull-up current, so a lower current into the same capacitance results in a slower rise time and a longer transition time in general, however since the lower current is also associated with a lower voltage swing the delay is somewhat compensated. The key point of the graphs is that the current has a temperature dependence, and the output driver will also have the same temperature dependency so that the output offset of ~200 mv on port A is nearly temperature independent. Even though the I IL parameter indicates that at V CC(A) of 0.95 V the can only sink up to 400 A instead of 450 A at cold temperature, the output is designed to be somewhat resistive such that under nominal conditions (1.1 V) the current source pull-up sources 1 ma and the output pull-down sinks the 1 ma at ~200 mv, so as the current source current decreases the output pull-down resistance increases in order to maintain the offset. [3] V IL specification is for the falling edge seen by the port A input. V ILc is for the static LOW levels seen by the port A input resulting in port B output staying LOW. [4] The port A current source has a typical value of about 1 ma, but varies with both V CC(A) and V CC(B). Below V CC(A) of about 0.7 V the port A current source current drops to 0 ma. The current source current dropping across the internal pull-down driver resistance of about 200 defines the V OL. [5] As long as the chip ground is common with the input ground reference the driver resistance may be as large as 120. However, ground offset will rapidly decrease the maximum allowed driver resistance. [6] Guaranteed by design aae aae734 I IL (ma) (1) (2) (3) (4) I IL (ma) (2) (3) (4) (1) (5) T amb ( C) Pins under test = An pins (1) High limit (2) Maximum (3) Mean (4) Minimum (5) Low limit Fig 8. LOW-level input current as a function of temperature; V CC(A) =1.0V (5) T amb ( C) Pins under test = An pins (1) High limit (2) Maximum (3) Mean (4) Minimum (5) Low limit Fig 9. LOW-level input current as a function of temperature; V CC(A) =0.95V All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
10 10. Dynamic characteristics Table 6. Dynamic characteristics Symbol Parameter Conditions Min Typ Max Unit V CC(A) =1.35V; V CC(B) =3.3V t PLH LOW to HIGH propagation delay port B to port A ns t PHL HIGH to LOW propagation delay port B to port A ns t TLH LOW to HIGH output transition time port A ns t THL HIGH to LOW output transition time port A ns t PLH LOW to HIGH propagation delay port A to port B ns t PLH2 LOW to HIGH propagation delay 2 port A to port B; measured from ns the 50 % of initial LOW on port A to 1.5 V rising on port B t PHL HIGH to LOW propagation delay port A to port B ns t TLH LOW to HIGH output transition time port B [2] ns t THL HIGH to LOW output transition time port B ns t su set-up time EN HIGH before START condition ns t h hold time EN HIGH after STOP condition ns V CC(A) =1.9V; V CC(B) =5.0V t PLH LOW to HIGH propagation delay port B to port A ns t PHL HIGH to LOW propagation delay port B to port A ns t TLH LOW to HIGH output transition time port A ns t THL HIGH to LOW output transition time port A ns t PLH LOW to HIGH propagation delay port A to port B ns t PLH2 LOW to HIGH propagation delay 2 port A to port B; measured from ns the 50 % of initial LOW on port A to 1.5 V rising on port B t PHL HIGH to LOW propagation delay port A to port B ns t TLH LOW to HIGH output transition time port B [2] ns t THL HIGH to LOW output transition time port B ns t su set-up time EN HIGH before START condition ns t h hold time EN HIGH after STOP condition ns Load capacitance = 50 pf; load resistance on port B = 1.35 k. [2] Value is determined by RC time constant of bus line. All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
11 10.1 AC waveforms V CC(B) V CC(A) input 0.5V CC(B) 0.5V CC(B) input 0.5V CC(A) 0.5V CC(A) t PHL t PLH 0.1 V t PHL t PLH output 70 % 70 % 0.5V CC(A) 0.5V CC(A) 30 % 30 % t THL t TLH V CC(A) V OL output 70 % 0.5V CC(B) 0.5V 70 % CC(B) 30 % 30 % t THL t TLH V CC(B) 002aab aab647 Fig 10. Propagation delay and transition times; port B to port A Fig 11. Propagation delay and transition times; port A to port B input port A 50 % of initial value output port B 0.5V CC(B) t PLH2 002aab648 Fig 12. Propagation delay from the port A external driver switching off to port B LOW-to-HIGH transition; port A to port B 11. Test information V CC(B) V CC(B) V CC(A) RL PULSE GENERATOR V I DUT V O RT CL 002aab649 Fig 13. R L = load resistor; 1.35 k on port B C L = load capacitance includes jig and probe capacitance; 50 pf R T = termination resistance should be equal to Z o of pulse generators Test circuit for open-drain outputs All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
12 12. Package outline Fig 14. Package outline SOT96-1 (SO8) All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
13 Fig 15. Package outline SOT505-1 (TSSOP8) All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
14 Fig 16. Package outline SOT902-2 (XQFN8) All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
15 13. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 Surface mount reflow soldering description Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization Wave and reflow soldering Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. The wave soldering process is suitable for the following: Through-hole components Leaded or leadless SMDs, which are glued to the surface of the printed circuit board Not all SMDs can be wave soldered. Packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. Leaded packages, packages with solder balls, and leadless packages are all reflow solderable. Key characteristics in both wave and reflow soldering are: Board specifications, including the board finish, solder masks and vias Package footprints, including solder thieves and orientation The moisture sensitivity level of the packages Package placement Inspection and repair Lead-free soldering versus SnPb soldering 13.3 Wave soldering Key characteristics in wave soldering are: Process issues, such as application of adhesive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave Solder bath specifications, including temperature and impurities All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
16 13.4 Reflow soldering Key characteristics in reflow soldering are: Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see Figure 17) than a SnPb process, thus reducing the process window Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board Reflow temperature profile; this profile includes preheat, reflow (in which the board is heated to the peak temperature) and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 7 and 8 Table 7. SnPb eutectic process (from J-STD-020D) Package thickness (mm) Package reflow temperature (C) Volume (mm 3 ) < < Table 8. Lead-free process (from J-STD-020D) Package thickness (mm) Package reflow temperature (C) Volume (mm 3 ) < to 2000 > 2000 < to > Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 17. All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
17 temperature maximum peak temperature = MSL limit, damage level minimum peak temperature = minimum soldering temperature peak temperature time 001aac844 Fig 17. MSL: Moisture Sensitivity Level Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 Surface mount reflow soldering description. 14. Soldering: PCB footprints Fig 18. PCB footprint for SOT96-1 (SO8); reflow soldering All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
18 Fig 19. PCB footprint for SOT96-1 (SO8); wave soldering Fig 20. PCB footprint for SOT505-1 (TSSOP8); reflow soldering All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
19 Fig 21. PCB footprint for SOT902-2 (XQFN8); reflow soldering All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
20 15. Abbreviations Table 9. Acronym CDM CMOS CPU ESD HBM I/O I 2 C-bus NMOS RC SMBus Abbreviations Description Charged-Device Model Complementary Metal-Oxide Semiconductor Central Processing Unit ElectroStatic Discharge Human Body Model Input/Output Inter-Integrated Circuit bus Negative-channel Metal-Oxide Semiconductor Resistor-Capacitor network System Management Bus All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
21 16. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes v Product data sheet - v.6 Modifications: Section 1 General description : First paragraph, third sentence changed from Port A allows a voltage range from 1.0 V (as low as 0.95 V in special cases) to V CC(B) 1.0 V to Port A allows a voltage range from 1.35 V to V CC(B) 1.0 V Added (new) second paragraph Section 2 Features and benefits : Second bullet item: changed from 1 V [0.95 V in special cases] to 1.35 V Tenth bullet item: changed from 1 V (0.95 V in special cases) to 1.35 V Section 6 Functional description, second paragraph: changed from 1.0 V (as low as 0.95 V in special cases) to 1.35 V Section 7 Application design-in information, first paragraph, second sentence: changed from the CPU is running on a 1.1 V I 2 C-bus to the CPU is running on a 1.35 V I 2 C-bus Figure 5 Typical application updated: changed from 1.1 V to 1.35 V (2 places) Table 5 Static characteristics : sub section Supplies : V CC(A) Min value changed from 1.0 V to 1.35 V ; added new line for D and DP sub section Input and output of port A (A1 to A2) : V OL : deleted Condition V CC(A) = 0.95 V to 1.2 V sub section Input and output of port A (A1 to A2) : V OL : Condition changed from V CC(A) = > 1.2 V to (V CC(B) 1 V) to V CC(A) = > 1.35 V to (V CC(B) 1V) sub section Input and output of port A (A1 to A2) : I LOH : Condition changed from V O =1.1V to V O =1.35V Table note changed from V CC(A) = 1.1 V to V CC(A) = 1.35 V Table 6 Dynamic characteristics : first sub heading changed from V CC(A) = 1.1 V; V CC(B) = 3.3 V to V CC(A) = 1.35 V; V CC(B) = 3.3 V v Product data sheet - v.5 v Product data sheet - v.4 v Product data sheet - v.3 v Product data sheet - v.2 v Product data sheet - v.1 v Product data sheet - - All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
22 17. Legal information 17.1 Data sheet status Document status [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. 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Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
23 Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors specifications such use shall be solely at customer s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors standard warranty and NXP Semiconductors product specifications. Translations A non-english (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. I 2 C-bus logo is a trademark of NXP Semiconductors N.V. 18. Contact information For more information, please visit: For sales office addresses, please send an to: [email protected] All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V All rights reserved. Product data sheet Rev. 7 4 November of 24
24 19. Contents 1 General description Features and benefits Ordering information Ordering options Functional diagram Pinning information Pinning Pin description Functional description Enable I 2 C-bus systems Application design-in information Limiting values Static characteristics Dynamic characteristics AC waveforms Test information Package outline Soldering of SMD packages Introduction to soldering Wave and reflow soldering Wave soldering Reflow soldering Soldering: PCB footprints Abbreviations Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Contents Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP Semiconductors N.V All rights reserved. For more information, please visit: For sales office addresses, please send an to: [email protected] Date of release: 4 November 2014 Document identifier:
HEF4011B. 1. General description. 2. Features and benefits. 3. Ordering information. 4. Functional diagram. Quad 2-input NAND gate
Rev. 6 10 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a quad 2-input NAND gate. The outputs are fully buffered for the highest noise
Quad 2-input NAND Schmitt trigger
Rev. 9 15 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Applications The is a quad two-input NAND gate. Each input has a Schmitt trigger circuit. The gate switches
74HC377; 74HCT377. 1. General description. 2. Features and benefits. 3. Ordering information
Rev. 4 24 February 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is an octal positive-edge triggered D-type flip-flop. The device features clock (CP)
HEF4021B. 1. General description. 2. Features and benefits. 3. Ordering information. 8-bit static shift register
Rev. 10 21 March 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is an (parallel-to-serial converter) with a synchronous serial data input (DS), a clock
1-of-4 decoder/demultiplexer
Rev. 6 1 April 2016 Product data sheet 1. General description 2. Features and benefits 3. Applications The contains two 1-of-4 decoders/demultiplexers. Each has two address inputs (na0 and na1, an active
3-to-8 line decoder, demultiplexer with address latches
Rev. 7 29 January 2016 Product data sheet 1. General description The is a high-speed Si-gate CMOS device and is pin compatible with low-power Schottky TTL (LSTTL). The is specified in compliance with JEDEC
The 74LVC1G11 provides a single 3-input AND gate.
Rev. 8 17 September 2015 Product data sheet 1. General description The provides a single 3-input AND gate. The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this
74HC175; 74HCT175. Quad D-type flip-flop with reset; positive-edge trigger
Rev. 5 29 January 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a quad positive-edge triggered D-type flip-flop with individual data inputs (Dn)
74HC02; 74HCT02. 1. General description. 2. Features and benefits. Ordering information. Quad 2-input NOR gate
Rev. 5 26 November 2015 Product data sheet 1. General description 2. Features and benefits The is a quad 2-input NOR gate. Inputs include clamp diodes. This enables the use of current limiting resistors
HEF4013B. 1. General description. 2. Features and benefits. 3. Applications. 4. Ordering information. Dual D-type flip-flop
Rev. 9 10 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Applications The is a dual D-type flip-flop that features independent set-direct input (SD), clear-direct input
Low-power configurable multiple function gate
Rev. 7 10 September 2014 Product data sheet 1. General description The provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the
14-stage ripple-carry binary counter/divider and oscillator
Rev. 8 25 March 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a with three oscillator terminals (RS, REXT and CEXT), ten buffered outputs (Q3 to
Triple single-pole double-throw analog switch
Rev. 12 25 March 2016 Product data sheet 1. General description 2. Features and benefits 3. Applications 4. Ordering information The is a triple single-pole double-throw (SPDT) analog switch, suitable
74HC154; 74HCT154. 4-to-16 line decoder/demultiplexer
Rev. 7 29 February 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a. It decodes four binary weighted address inputs (A0 to A3) to sixteen mutually
74HC238; 74HCT238. 3-to-8 line decoder/demultiplexer
Rev. 4 27 January 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The decodes three binary weighted address inputs (A0, A1 and A2) to eight mutually exclusive
74HCU04. 1. General description. 2. Features and benefits. 3. Ordering information. Hex unbuffered inverter
Rev. 7 8 December 2015 Product data sheet 1. General description The is a hex unbuffered inverter. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to
74HC107; 74HCT107. Dual JK flip-flop with reset; negative-edge trigger
Rev. 5 30 November 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a dual negative edge triggered JK flip-flop featuring individual J and K inputs,
8-channel analog multiplexer/demultiplexer
Rev. 12 25 March 2016 Product data sheet 1. General description The is an with three address inputs (S1 to S3), an active LOW enable input (E), eight independent inputs/outputs (Y0 to Y7) and a common
74HC574; 74HCT574. Octal D-type flip-flop; positive edge-trigger; 3-state
Rev. 7 4 March 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is an 8-bit positive-edge triggered D-type flip-flop with 3-state outputs. The device
8-bit binary counter with output register; 3-state
Rev. 3 24 February 2016 Product data sheet 1. General description The is an 8-bit binary counter with a storage register and 3-state outputs. The storage register has parallel (Q0 to Q7) outputs. The binary
74HC165; 74HCT165. 8-bit parallel-in/serial out shift register
Rev. 4 28 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Applications 4. Ordering information The is an 8-bit serial or parallel-in/serial-out shift register. The device
74HC4040; 74HCT4040. 12-stage binary ripple counter
Rev. 5 3 February 2016 Product data sheet 1. General description 2. Features and benefits 3. Applications 4. Ordering information The is a with a clock input (CP), an overriding asynchronous master reset
74HC2G02; 74HCT2G02. 1. General description. 2. Features and benefits. 3. Ordering information. Dual 2-input NOR gate
Rev. 5 27 September 2013 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a dual 2-input NOR gate. Inputs include clamp diodes. This enables the use of
Planar PIN diode in a SOD323 very small plastic SMD package.
Rev. 8 12 May 2015 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD323 very small plastic SMD package. 1.2 Features and benefits High voltage, current controlled
74HC138; 74HCT138. 3-to-8 line decoder/demultiplexer; inverting
Rev. 6 28 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The decodes three binary weighted address inputs (A0, A1 and A2) to eight mutually exclusive
74HC393; 74HCT393. Dual 4-bit binary ripple counter
Rev. 6 3 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The 74HC393; 7474HCT393 is a dual 4-stage binary ripple counter. Each counter features
IP4234CZ6. 1. Product profile. Single USB 2.0 ESD protection to IEC 61000-4-2 level 4. 1.1 General description. 1.2 Features. 1.
Rev. 01 16 April 2009 Product data sheet 1. Product profile 1.1 General description The is designed to protect Input/Output (I/O) USB 2.0 ports, that are sensitive to capacitive loads, from being damaged
Schottky barrier quadruple diode
Rev. 3 8 October 2012 Product data sheet 1. Product profile 1.1 General description with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated
SiGe:C Low Noise High Linearity Amplifier
Rev. 2 21 February 2012 Product data sheet 1. Product profile 1.1 General description The is a low noise high linearity amplifier for wireless infrastructure applications. The LNA has a high input and
BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description
SOT2 Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small SOT2 (TO-26AB) Surface-Mounted
The 74LVC1G04 provides one inverting buffer.
Rev. 12 6 ugust 2012 Product data sheet 1. General description The provides one inverting buffer. Input can be driven from either 3.3 V or 5 V devices. These features allow the use of these devices in
High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC
Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package
74HC573; 74HCT573. 1. General description. 2. Features and benefits. Octal D-type transparent latch; 3-state
Rev. 7 4 March 2016 Product data sheet 1. General description The is an 8-bit D-type transparent latch with 3-state outputs. The device features latch enable (LE) and output enable (OE) inputs. When LE
74HC74; 74HCT74. 1. General description. 2. Features and benefits. 3. Ordering information
Rev. 5 3 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The 74HC74 and 74HCT74 are dual positive edge triggered D-type flip-flop. They have individual
Hex buffer with open-drain outputs
Rev. 5 27 October 20 Product data sheet. General description The provides six non-inverting buffers. The outputs are open-drain and can be connected to other open-drain outputs to implement active-low
Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package
Rev. 6 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C
BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1.
Rev. 6 4 September 04 Product data sheet. Product profile. General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package Configuration
8-bit synchronous binary down counter
Rev. 5 21 April 2016 Product data sheet 1. General description The is an 8-bit synchronous down counter. It has control inputs for enabling or disabling the clock (CP), for clearing the counter to its
Low-power D-type flip-flop; positive-edge trigger; 3-state
Rev. 8 29 November 2012 Product data sheet 1. General description The provides the single D-type flip-flop with 3-state output. The flip-flop will store the state of data input (D) that meet the set-up
10 ma LED driver in SOT457
SOT457 in SOT457 Rev. 1 20 February 2014 Product data sheet 1. Product profile 1.1 General description LED driver consisting of resistor-equipped PNP transistor with two diodes on one chip in an SOT457
74AUP1G74. 1. General description. 2. Features and benefits. Low-power D-type flip-flop with set and reset; positive-edge trigger
Low-power D-type flip-flop with set and reset; positive-edge trigger Rev. 9 6 January 2014 Product data sheet 1. General description The provides a low-power, low-voltage single positive-edge triggered
3-input EXCLUSIVE-OR gate. The 74LVC1G386 provides a 3-input EXCLUSIVE-OR function.
Rev. 02 3 September 2007 Product data sheet 1. General description The provides a 3-input EXCLUSIVE-OR function. The input can be driven from either 3.3 or 5 V devices. This feature allows the use of these
74HC595; 74HCT595. 1. General description. 2. Features and benefits. 3. Applications
8-bit serial-in, serial or parallel-out shift register with output latches; 3-state Rev. 7 26 January 2015 Product data sheet 1. General description The are high-speed Si-gate CMOS devices and are pin
IP4220CZ6. 1. Product profile. Dual USB 2.0 integrated ESD protection. 1.1 General description. 1.2 Features and benefits. 1.
SOT457 Rev. 5 8 July 2011 Product data sheet 1. Product profile 1.1 General description The is designed to protect I/O lines sensitive to capacitive load, such as USB 2.0, ethernet, Digital Video Interface
74HC595; 74HCT595. 1. General description. 2. Features and benefits. 3. Applications
8-bit serial-in, serial or parallel-out shift register with output latches; 3-state Rev. 8 25 February 2016 Product data sheet 1. General description The is an 8-bit serial-in/serial or parallel-out shift
74HC32; 74HCT32. 1. General description. 2. Features and benefits. Quad 2-input OR gate
Rev. 5 4 September 202 Product data sheet. General description The is a quad 2-input OR gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages
74HC4067; 74HCT4067. 16-channel analog multiplexer/demultiplexer
Rev. 6 22 May 2015 Product data sheet 1. General description The is a single-pole 16-throw analog switch (SP16T) suitable for use in analog or digital 16:1 multiplexer/demultiplexer applications. The switch
74HC123; 74HCT123. Dual retriggerable monostable multivibrator with reset
Rev. 9 19 January 2015 Product data sheet 1. General description The are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with
Buffer with open-drain output. The 74LVC1G07 provides the non-inverting buffer.
Rev. 11 29 June 2012 Product data sheet 1. General description The provides the non-inverting buffer. The output of this device is an open drain and can be connected to other open-drain outputs to implement
NPN wideband transistor in a SOT89 plastic package.
SOT89 Rev. 05 21 March 2013 Product data sheet 1. Product profile 1.1 General description in a SOT89 plastic package. 1.2 Features and benefits High gain Gold metallization ensures excellent reliability
74HC4066; 74HCT4066. Quad single-pole single-throw analog switch
Rev. 8 3 December 2015 Product data sheet 1. General description The is a quad single pole, single throw analog switch. Each switch features two input/output terminals (ny and nz) and an active HIGH enable
The sensor can be operated at any frequency between DC and 1 MHz.
Rev. 6 18 November 2010 Product data sheet 1. Product profile 1.1 General description The is a sensitive magnetic field sensor, employing the magneto-resistive effect of thin film permalloy. The sensor
Bus buffer/line driver; 3-state
Rev. 11 2 July 2012 Product data sheet 1. General description The provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). HIGH-level
LIN-bus ESD protection diode
Rev. 3 31 May 2011 Product data sheet 1. Product profile 1.1 General description in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package designed to protect one automotive Local Interconnect
PCA9507. 1. General description. 2. Features. 2-wire serial bus extender for HDMI DDC I 2 C-bus and SMBus
Rev. 01 7 February 2008 Product data sheet 1. General description 2. Features The is a 2-wire serial bus extender providing 3.3 V to 5 V level shift that allows up to 18 meters bus extension for reliable
Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control
TO-92 Rev. 9 9 November 2 Product data sheet. Product profile. General description Passivated, sensitive gate triacs in a SOT54 plastic package.2 Features and benefits Designed to be interfaced directly
45 V, 100 ma NPN general-purpose transistors
Rev. 9 2 September 214 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number
74HC4051; 74HCT4051. 8-channel analog multiplexer/demultiplexer
Rev. 8 5 February 2016 Product data sheet 1. General description The is a single-pole octal-throw analog switch (SP8T) suitable for use in analog or digital 8:1 multiplexer/demultiplexer applications.
Femtofarad bidirectional ESD protection diode
Rev. 3 24 October 2011 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 Surface-Mounted
CAN bus ESD protection diode
Rev. 04 15 February 2008 Product data sheet 1. Product profile 1.1 General description in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller
74ALVC164245. 16-bit dual supply translating transceiver; 3-state. This device can be used as two 8-bit transceivers or one 16-bit transceiver.
Rev. 8 15 March 2012 Product data sheet 1. General description The is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. The is a 16-bit
HEF4013B. 1. General description. 2. Features and benefits. 3. Applications. 4. Ordering information. Dual D-type flip-flop
Rev. 8 21 November 2011 Product data sheet 1. General description 2. Features and benefits 3. pplications The is a dual -type flip-flop that features independent set-direct input (S), clear-direct input
High-speed USB 2.0 switch with enable
Rev. 4 9 June 03 Product data sheet. General description The is a high-bandwidth switch designed for the switching of high-speed UB.0 signals in handset and consumer applications. These applications could
DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors
DISCRETE SEMICONDUCTORS DATA SHEET Product specification April 24 Product specification GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
DISCRETE SEMICONDUCTORS DATA SHEET. dbook, halfpage M3D088. BB201 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Low-voltage variable capacitance double 2001 Oct 12 Low-voltage variable capacitance double FEATURES Excellent linearity C1: 95 pf; C7.5: 27.6
PCA9547. 1. General description. 2. Features and benefits. 8-channel I 2 C-bus multiplexer with reset
Rev. 4 1 April 2014 Product data sheet 1. General description The is an octal bidirectional translating multiplexer controlled by the I 2 C-bus. The SCL/SDA upstream pair fans out to eight downstream pairs,
NTB0102. 1. General description. 2. Features and benefits. Dual supply translating transceiver; auto direction sensing; 3-state
Dual supply translating transceiver; auto direction sensing; 3-state Rev. 4 23 January 2013 Product data sheet 1. General description The is a 2-bit, dual supply translating transceiver with auto direction
DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 996 Jul BF5A; BF5B; BF5C FEATURES Interchangeability of drain and source connections Frequencies
40 V, 200 ma NPN switching transistor
Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic
BLL6G1214L-250. 1. Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1.
BLL6G1214L-25 Rev. 1 16 February 212 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Medium power Schottky barrier single diode
Rev. 03 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated
IP4294CZ10-TBR. ESD protection for ultra high-speed interfaces
XSON1 Rev. 4 1 November 213 Product data sheet 1. Product profile 1.1 General description The device is designed to protect high-speed interfaces such as SuperSpeed USB, High-Definition Multimedia Interface
PMEG3015EH; PMEG3015EJ
Rev. 03 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
PMEG2020EH; PMEG2020EJ
Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
PRTR5V0U2F; PRTR5V0U2K
Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection devices in leadless ultra small
PMEG3005EB; PMEG3005EL
Rev. 0 29 November 2006 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress
PUSB3FR4. 1. Product profile. ESD protection for ultra high-speed interfaces. 1.1 General description. 1.2 Features and benefits. 1.
XSON1 Rev. 1 26 January 215 Product data sheet 1. Product profile 1.1 General description The device is designed to protect high-speed interfaces such as SuperSpeed USB 3.1 at 1 Gbps, High-Definition Multimedia
PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1.
Rev. 02 20 August 2009 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package
ESD protection for high-speed interfaces
Rev. 1 1 October 212 Product data sheet 1. Product profile 1.1 General description The device is designed to protect high-speed interfaces such as High-Definition Multimedia Interface (HDMI), DisplayPort,
NPN wideband silicon RF transistor
Rev. 1 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The is part of the
NVT2001; NVT2002. Bidirectional voltage level translator for open-drain and push-pull applications
for open-drain and push-pull applications Rev. 4 27 January 2014 Product data sheet 1. General description 2. Features and benefits The NVT2001/02 are bidirectional voltage level translators operational
Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package
TO-220AC 27 May 2015 Product data sheet 1. General description Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package 2. Features and benefits Fast switching Low thermal resistance
74LVC1G74. 1. General description. 2. Features and benefits. Single D-type flip-flop with set and reset; positive edge trigger
Rev. 12 2 pril 2013 Product data sheet 1. General description The is a single positive edge triggered -type flip-flop with individual data () inputs, clock (P) inputs, set (S) and reset (R) inputs, and
INTEGRATED CIRCUITS. 74LVC08A Quad 2-input AND gate. Product specification IC24 Data Handbook. 1997 Jun 30
INTEGRATED CIRCUITS IC24 Data Handbook 1997 Jun 30 FEATURES Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1A Inputs accept voltages up to 5.5 V CMOS low power consumption
PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.
Rev. 04 30 December 2008 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for
65 V, 100 ma PNP/PNP general-purpose transistor
Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
4-bit binary full adder with fast carry CIN + (A1 + B1) + 2(A2 + B2) + 4(A3 + B3) + 8(A4 + B4) = = S1 + 2S2 + 4S3 + 8S4 + 16COUT
Rev. 03 11 November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL (LSTTL). The is specified in compliance
How To Make An Electric Static Discharge (Esd) Protection Diode
Rev. 01 0 October 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device
AAV003-10E Current Sensor
Datasheet AAV003-10E Current Sensor Key Features For Low Current Detection On-Chip Current Strap for Precise Operation 80 ma to +80 ma Linear Range Sensitivity up to 2 mv/ma AC or DC Measurement Ultraminiature
45 V, 100 ma NPN/PNP general-purpose transistor
Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
General purpose low power phase control General purpose low power switching Solid-state relay. Symbol Parameter Conditions Min Typ Max Unit V DRM
TO-92 May 25 Product data sheet. General description Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package intended to be interfaced directly to microcontrollers, logic integrated
DISCRETE SEMICONDUCTORS DATA SHEET M3D848. CGD923 870 MHz, 20 db gain power doubler amplifier. Product specification 2002 Oct 08
DISCRETE SEMICONDUCTORS DATA SHEET M3D848 2002 Oct 08 FEATURES High output capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Gold metallization ensures
SA630. 1. General description. 2. Features and benefits. 3. Applications. Single-Pole Double-Throw (SPDT) switch
Rev. 3 23 July 2014 Product data sheet 1. General description The is a wideband RF switch fabricated in BiCMOS technology and incorporating on-chip CMOS/TTL compatible drivers. Its primary function is
NPN wideband silicon germanium RF transistor
Rev. 1 29 April 211 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F
Silicon temperature sensors. Other special selections are available on request.
Rev. 05 25 April 2008 Product data sheet 1. Product profile 1.1 General description The temperature sensors in the have a positive temperature coefficient of resistance and are suitable for use in measurement
BAS70 series; 1PS7xSB70 series
BAS70 series; PS7xSB70 series Rev. 09 January 00 Product data sheet. Product profile. General description in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package
BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
65 V, 00 ma NPN general-purpose transistors Rev. 07 7 November 009 Product data sheet. Product profile. General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
2PD601ARL; 2PD601ASL
Rev. 01 6 November 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1.
