High-speed USB 2.0 switch with enable

Size: px
Start display at page:

Download "High-speed USB 2.0 switch with enable"

Transcription

1 Rev. 4 9 June 03 Product data sheet. General description The is a high-bandwidth switch designed for the switching of high-speed UB.0 signals in handset and consumer applications. These applications could be cell phones, digital cameras, and notebooks with hubs or controllers with limited UB I/Os. The wide bandwidth ( GHz) of this switch allows signal to pass with minimum edge and phase distortion. The device multiplexes differential outputs from a UB host device to one of two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. It is designed for low bit-to-bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as high-speed UB.0 (480 Mbps).. Features and benefits 3. Applications Wide supply voltage range from.3 V to 3.6 V witch voltage accepts signals up to 5.5 V.8 V control logic at V CC = 3.6 V Low-power mode when is HIGH ( A maximum) 6 (maximum) ON resistance 0. (typical) ON resistance mismatch between channels 6 pf (typical) ON-state capacitance High bandwidth (.0 GHz typical) Latch-up performance exceeds 00 ma per JED 78B Class II Level A ED protection: HBM JED-A4F Class 3A exceeds 8000 V CDM JED-C0E exceeds 000 V HBM exceeds 000 V for I/O to GND protection pecified from 40 C to +85 C Routes signals for UB.0,. and.0

2 4. Ordering information Table. Type number 5. Marking Ordering information Package Temperature range Name Description Version GM 40 C to +85 C XQFN0 plastic extremely thin quad flat package; no leads; 0 terminals; body mm TK 40 C to +85 C HVON0 plastic thermal enhanced very thin small outline package; no leads; 0 terminals; mm OT049-3 OT650- Table. Marking Type number Marking code [] GM x TK x [] The pin indicator is located on the lower left corner of the device, below the marking code. 6. Functional diagram D+ 8 D+ D- 7 D- 3 D+ V CC CHARGE PUMP 4 D- 6 9 CONTROLLOGIC 00aao078 Fig. Logic symbol All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 of 9

3 7. Pinning information 7. Pinning Fig. Pin configuration OT049-3 (XQFN0) Fig 3. Pin configuration OT650- (HVON0) 7. Pin description Table 3. Pin description ymbol Pin Description D+ independent input or output D independent input or output D+ 3 independent input or output D 4 independent input or output GND 5 ground (0 V) 6 output enable input (active LOW) D 7 common input or output D+ 8 common input or output 9 select input V CC 0 supply voltage 8. Functional description Table 4. Function table [] Input Channel L L D+ = D+; D = D H L D+ = D+; D = D X H switches off [] H = HIGH voltage level; L = LOW voltage level; X = don t care. All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 3 of 9

4 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating ystem (IEC 6034). Voltages are referenced to GND (ground = 0 V). ymbol Parameter Conditions Min Max Unit V CC supply voltage V V I input voltage, input [] V V W switch voltage [] V I IK input clamping current V I < 0.5 V 50 - ma I K switch clamping current V I < 0.5 V 50 - ma I W switch current - 0 ma I CC supply current ma I GND ground current 00 - ma T stg storage temperature C P tot total power dissipation T amb = 40 C to+5c - 50 mw [] The minimum input voltage rating may be exceeded if the input current rating is observed. [] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed. 0. Recommended operating conditions Table 6. Recommended operating conditions ymbol Parameter Conditions Min Max Unit V CC supply voltage V V I input voltage, input 0 V CC V V W switch voltage V T amb ambient temperature C. tatic characteristics Table 7. tatic characteristics At recommended operating conditions; voltages are referenced to GND (ground 0 V). ymbol Parameter Conditions T amb = 5 C T amb =-40 C to +85 C Unit Min Typ Max Min Max HIGH-level V CC =.3 V to.7 V V CC - V input voltage V CC =.7 V to 3.6 V V CC - V LOW-level V CC =.3 V to.7 V V CC V input voltage V CC =.7 V to 3.6 V V CC V V IK input clamping voltage V CC =.7 V, 3.6 V; I I = 8 ma V I I input leakage current, input; V CC = 0 V,.7 V, 3.6; V I =GNDto3.6V A All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 4 of 9

5 Table 7. tatic characteristics continued At recommended operating conditions; voltages are referenced to GND (ground 0 V). ymbol Parameter Conditions T amb = 5 C T amb =-40 C to +85 C Unit Min Typ Max Min Max I OFF power-off per pin; V CC =0V leakage current V W = 0 V to.7 V A V W = 0 V to 3.6 V A V W =0Vto5.5V A I (OFF) OFF-state leakage current nd+ and nd- ports; see Figure 4 V CC =.7 V, 3.6 V A I CC supply current V CC =.7 V, 3.6 V =GND A =V CC (low-power mode) A I CC C I C (OFF) C (ON) additional supply current input capacitance OFF-state capacitance ON-state capacitance, input; one input at.8 V; other inputs at GND or V CC V CC =.7 V A V CC = 3.6 V A V W = GND or V CC ; pf V CC =.5 V, 3.3 V V W = GND or V CC ; pf V CC =.5 V, 3.3 V V W = GND or V CC ; pf V CC =.5 V, 3.3 V. Test circuits V CC switch or Dn Dn Dn switch I GND VI VO 00aao080 Fig 4. V I =0V; V O = 0 V to 5.5 V Test circuit for measuring OFF-state leakage current All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 5 of 9

6 . ON resistance Table 8. ON resistance At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 6. ymbol Parameter Conditions T amb = 40 C to +85 C T amb = 40 C to +85 C Unit Min Typ [] Max Min Max R ON ON resistance V CC =.3 V, 3.0V see Figure 5 V I =0V; I I =30mA V I =.4V; I I = 5 ma R ON ON resistance V CC =.3 V, 3.0 V [] mismatch V I =0V; between channels I I =30mA V I =.7V; I I = 5 ma R ON(flat) ON resistance (flatness) [] Typical values are measured at T amb = 5 C. [] Measured at identical V CC, temperature and input voltage. V CC =.3 V, 3.0V; [3] V I = 0 V to V CC I I =30mA I I = 5 ma [3] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical V CC and temperature..3 ON resistance test circuit and waveforms or Dn V CC Dn Dn V VW switch switch GND VI IW 00aao08 Fig 5. R ON = V W / I W. Test circuit for measuring ON resistance All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 6 of 9

7 5.0 00aao08 R ON (Ω) V I (V) Fig 6. ON resistance as a function of input voltage. Dynamic characteristics Table 9. Dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 0. ymbol Parameter Conditions T amb = 5 C T amb = 40 C to +85 C Unit Min Typ [] Max Min Max t pd propagation delay Dn to ndn or ndn to Dn; [][3] see Figure 7 V CC =.3 V to.7 V ns V CC = 3.0 V to 3.6 V ns t en enable time to Dn, ndn; [3] see Figure 9 V CC =.3 V to.7 V ns V CC = 3.0 V to 3.6 V ns to Dn, ndn; [3] see Figure 9 V CC =.3 V to.7 V ns V CC = 3.0 V to 3.6 V ns t dis disable time to Dn, ndn; [3] see Figure 9 V CC =.3 V to.7 V ns V CC = 3.0 V to 3.6 V ns to Dn, ndn; [3] see Figure 9 V CC =.3 V to.7 V ns V CC = 3.0 V to 3.6 V ns All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 7 of 9

8 Table 9. Dynamic characteristics continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 0. ymbol Parameter Conditions T amb = 5 C T amb = 40 C to +85 C Unit t sk(o) output skew time see Figure 8 [4] t sk(p) pulse skew time see Figure 7 [4] [] Typical values are measured at T amb = 5 C and V CC =.5 V and 3.3 V respectively. [] The propagation delay is the calculated RC time constant of the typical ON resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance). [3] t pd is the same as t PLH and t PHL. [4] Guaranteed by design. V CC =.3 V to.7 V ns V CC = 3.0 V to 3.6 V ns V CC =.3 V to.7 V ns V CC = 3.0 V to 3.6 V ns. Waveforms, test circuit and graphs Min Typ [] Max Min Max 800 mv input 50% 400 mv t PLH t PHL V OH output 50% V OL 00aao083 Fig 7. Logic levels: V OL and V OH are typical output voltage levels that occur with the output load. t sk(p) = t PHL t PLH. The data input to output propagation delay times and pulse skew time All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 8 of 9

9 800 mv input 50% output 400 mv V OH t PLH () 50% t PHL () V OL output V OH t sk(o) 50% t sk(o) V OL t PLH () t PHL () 00aao084 Fig 8. Logic levels: V OL and V OH are typical output voltage levels that occur with the output load. t sk(o) = t PLH () t PLH () or t PHL () t PHL (). Output skew time V I, input V M V M GND t en t dis output OFF to HIGH HIGH to OFF V OH GND V X V X t dis t en output HIGH to OFF OFF to HIGH V OH GND V X V X 00aao085 Fig 9. Measurement points are given in Table 0. Logic levels: V OL and V OH are typical output voltage levels that occur with the output load. Enable and disable times Table 0. Measurement points upply voltage Input Output V CC V M V I V X.3 V to 3.6 V 0.5V I. 8 V 0.9V OH All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 9 of 9

10 V CC Dn Dn Dn G VI VEXT = VCC RL CL RL CL GND 00aao086 Fig 0. Test data is given in Table. Definitions test circuit: R L = Load resistance. C L = Load capacitance including jig and probe capacitance. V EXT = External voltage for measuring switching times. V I may be connected to or. Test circuit for switching times Table. Test data upply voltage Input Load V CC V I t r, t f C L R L.3 V to 3.6 V.8 V 5ns 50pF V -0.5 V Time scale (0.5 ns/div) 00aao087 Fig. Eye-pattern 480 Mbps UB signal with no switch. All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 0 of 9

11 + 0.5 V -0.5 V Time scale (0.5 ns/div) 00aao088 Fig. Eye-pattern 480 Mbps UB signal with switch (normally closed path) V -0.5 V Time scale (0.5 ns/div) 00aao089 Fig 3. Eye-pattern 480 Mbps UB signal with switch (normally open path) All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 of 9

12 . Additional dynamic characteristics Table. Additional dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); V I = GND or V CC (unless otherwise specified); t r =t f 5 ns; T amb =5C. ymbol Parameter Conditions Min Typ Max Unit f (3dB) 3 db frequency R L =50; see Figure 4 [][] response V CC =.3 V to.7 V GHz V CC = 3.0 V to 3.6 V GHz iso isolation (OFF-state) f i = 50 MHz; R L =50; see Figure 5 [][] V CC =.3 V to.7 V db V CC = 3.0 V to 3.6 V db Xtalk crosstalk between switches; [][] f i = 50 MHz; R L =50; seefigure 6 V CC =.3 V to.7 V db V CC = 3.0 V to 3.6 V db [] f i is biased at 350 mv. [] V i = 63 mv (p-p)..3 Test circuits V CC 350 mv switch or Dn Dn Dn switch RL fi GND db 00aao090 Fig 4. To obtain 0 dbm level at output, adjust f i voltage. Increase f i frequency until db meter reads 3 db. Test circuit for measuring the frequency response when switch is in ON-state All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 of 9

13 350 mv V CC 350 mv switch RL RL or Dn Dn Dn switch fi GND db 00aao09 To obtain 0 dbm level at input, adjust f i voltage. Fig 5. Test circuit for measuring isolation (OFF-state) V CC 350 mv 350 mv or Dn Dn Dn RL RL 50 Ω fi db GND 00aao09 Fig 6. Test circuit for measuring crosstalk All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 3 of 9

14 3. Package outline XQFN0: plastic, extremely thin quad flat package; no leads; 0 terminals; body.55 x.00 x 0.50 mm OT049-3 X terminal index area D B A E A A c detail X b 5 Æ v Æ w C C A B y C C y 4 6 e e b 9 terminal index area L 0 L Dimensions 0 mm scale Unit () A A b b c D E e e L L v w y y mm max nom min Note. Plastic or metal protrusions of mm maximum per side are not included. sot049-3_po Outline version References IEC JEDEC JEITA OT MO European projection Issue date Fig 7. Package outline OT049-3 (XQFN0) All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 4 of 9

15 HVON0: plastic thermal enhanced very thin small outline package; no leads; 0 terminals; 3 x 3 x 0.85 mm OT650- X D B A E A A c terminal index area terminal index area e e b 5 v w C C A B y C detail X C y L K E h Dimensions 0 6 D h 0 mm scale Unit A () A b c D () D h E () E h e e K L v w y y mm max nom min Note. Plastic or metal protrusions of mm maximum per side are not included sot650-_po Outline version References IEC JEDEC JEITA OT MO European projection Issue date Fig 8. Package outline OT650- (HVON0) All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 5 of 9

16 4. Abbreviations Table 3. Acronym CDM CMO ED HBM MM Abbreviations Description Charged Device Model Complementary Metal Oxide emiconductor Electrotatic Discharge Human Body Model Machine Model 5. Revision history Table 4. Revision history Document ID Release date Data sheet status Change notice upersedes v Product data sheet - v.3 Modifications: Type number TK added. Package outline drawing added (Figure 8). v Product data sheet - v. v. 009 Product data sheet - v. v. 004 Product data sheet - - All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 6 of 9

17 6. Legal information 6. Data sheet status Document status [][] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL 6. Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP emiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. hort data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP emiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP emiconductors and its customer, unless NXP emiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP emiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 6.3 Disclaimers Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP emiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP emiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP emiconductors. In no event shall NXP emiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP emiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP emiconductors. Right to make changes NXP emiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. uitability for use NXP emiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP emiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP emiconductors and its suppliers accept no liability for inclusion and/or use of NXP emiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP emiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP emiconductors products, and NXP emiconductors accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP emiconductors product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP emiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using NXP emiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values tress above one or more limiting values (as defined in the Absolute Maximum Ratings ystem of IEC 6034) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP emiconductors products are sold subject to the general terms and conditions of commercial sale, as published at unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP emiconductors hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of NXP emiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 7 of 9

18 Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP emiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP emiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP emiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP emiconductors specifications such use shall be solely at customer s own risk, and (c) customer fully indemnifies NXP emiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP emiconductors standard warranty and NXP emiconductors product specifications. Translations A non-english (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 6.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 7. Contact information For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. NXP B.V. 03. All rights reserved. Product data sheet Rev. 4 9 June 03 8 of 9

19 8. Contents General description Features and benefits Applications Ordering information Marking Functional diagram Pinning information Pinning Pin description Functional description Limiting values Recommended operating conditions tatic characteristics Test circuits ON resistance ON resistance test circuit and waveforms Dynamic characteristics Waveforms, test circuit and graphs Additional dynamic characteristics Test circuits Package outline Abbreviations Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Contents Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V. 03. All rights reserved. For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com Date of release: 9 June 03 Document identifier:

The 74LVC1G11 provides a single 3-input AND gate.

The 74LVC1G11 provides a single 3-input AND gate. Rev. 8 17 September 2015 Product data sheet 1. General description The provides a single 3-input AND gate. The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of this

More information

HEF4011B. 1. General description. 2. Features and benefits. 3. Ordering information. 4. Functional diagram. Quad 2-input NAND gate

HEF4011B. 1. General description. 2. Features and benefits. 3. Ordering information. 4. Functional diagram. Quad 2-input NAND gate Rev. 6 10 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a quad 2-input NAND gate. The outputs are fully buffered for the highest noise

More information

3-to-8 line decoder, demultiplexer with address latches

3-to-8 line decoder, demultiplexer with address latches Rev. 7 29 January 2016 Product data sheet 1. General description The is a high-speed Si-gate CMOS device and is pin compatible with low-power Schottky TTL (LSTTL). The is specified in compliance with JEDEC

More information

Low-power configurable multiple function gate

Low-power configurable multiple function gate Rev. 7 10 September 2014 Product data sheet 1. General description The provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the

More information

1-of-4 decoder/demultiplexer

1-of-4 decoder/demultiplexer Rev. 6 1 April 2016 Product data sheet 1. General description 2. Features and benefits 3. Applications The contains two 1-of-4 decoders/demultiplexers. Each has two address inputs (na0 and na1, an active

More information

Quad 2-input NAND Schmitt trigger

Quad 2-input NAND Schmitt trigger Rev. 9 15 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Applications The is a quad two-input NAND gate. Each input has a Schmitt trigger circuit. The gate switches

More information

74HC377; 74HCT377. 1. General description. 2. Features and benefits. 3. Ordering information

74HC377; 74HCT377. 1. General description. 2. Features and benefits. 3. Ordering information Rev. 4 24 February 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is an octal positive-edge triggered D-type flip-flop. The device features clock (CP)

More information

74HC02; 74HCT02. 1. General description. 2. Features and benefits. Ordering information. Quad 2-input NOR gate

74HC02; 74HCT02. 1. General description. 2. Features and benefits. Ordering information. Quad 2-input NOR gate Rev. 5 26 November 2015 Product data sheet 1. General description 2. Features and benefits The is a quad 2-input NOR gate. Inputs include clamp diodes. This enables the use of current limiting resistors

More information

8-channel analog multiplexer/demultiplexer

8-channel analog multiplexer/demultiplexer Rev. 12 25 March 2016 Product data sheet 1. General description The is an with three address inputs (S1 to S3), an active LOW enable input (E), eight independent inputs/outputs (Y0 to Y7) and a common

More information

Triple single-pole double-throw analog switch

Triple single-pole double-throw analog switch Rev. 12 25 March 2016 Product data sheet 1. General description 2. Features and benefits 3. Applications 4. Ordering information The is a triple single-pole double-throw (SPDT) analog switch, suitable

More information

74HC2G02; 74HCT2G02. 1. General description. 2. Features and benefits. 3. Ordering information. Dual 2-input NOR gate

74HC2G02; 74HCT2G02. 1. General description. 2. Features and benefits. 3. Ordering information. Dual 2-input NOR gate Rev. 5 27 September 2013 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a dual 2-input NOR gate. Inputs include clamp diodes. This enables the use of

More information

HEF4021B. 1. General description. 2. Features and benefits. 3. Ordering information. 8-bit static shift register

HEF4021B. 1. General description. 2. Features and benefits. 3. Ordering information. 8-bit static shift register Rev. 10 21 March 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is an (parallel-to-serial converter) with a synchronous serial data input (DS), a clock

More information

74HC175; 74HCT175. Quad D-type flip-flop with reset; positive-edge trigger

74HC175; 74HCT175. Quad D-type flip-flop with reset; positive-edge trigger Rev. 5 29 January 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a quad positive-edge triggered D-type flip-flop with individual data inputs (Dn)

More information

74HC154; 74HCT154. 4-to-16 line decoder/demultiplexer

74HC154; 74HCT154. 4-to-16 line decoder/demultiplexer Rev. 7 29 February 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a. It decodes four binary weighted address inputs (A0 to A3) to sixteen mutually

More information

74HC238; 74HCT238. 3-to-8 line decoder/demultiplexer

74HC238; 74HCT238. 3-to-8 line decoder/demultiplexer Rev. 4 27 January 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The decodes three binary weighted address inputs (A0, A1 and A2) to eight mutually exclusive

More information

74HCU04. 1. General description. 2. Features and benefits. 3. Ordering information. Hex unbuffered inverter

74HCU04. 1. General description. 2. Features and benefits. 3. Ordering information. Hex unbuffered inverter Rev. 7 8 December 2015 Product data sheet 1. General description The is a hex unbuffered inverter. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to

More information

SiGe:C Low Noise High Linearity Amplifier

SiGe:C Low Noise High Linearity Amplifier Rev. 2 21 February 2012 Product data sheet 1. Product profile 1.1 General description The is a low noise high linearity amplifier for wireless infrastructure applications. The LNA has a high input and

More information

74HC574; 74HCT574. Octal D-type flip-flop; positive edge-trigger; 3-state

74HC574; 74HCT574. Octal D-type flip-flop; positive edge-trigger; 3-state Rev. 7 4 March 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is an 8-bit positive-edge triggered D-type flip-flop with 3-state outputs. The device

More information

The 74LVC1G04 provides one inverting buffer.

The 74LVC1G04 provides one inverting buffer. Rev. 12 6 ugust 2012 Product data sheet 1. General description The provides one inverting buffer. Input can be driven from either 3.3 V or 5 V devices. These features allow the use of these devices in

More information

HEF4013B. 1. General description. 2. Features and benefits. 3. Applications. 4. Ordering information. Dual D-type flip-flop

HEF4013B. 1. General description. 2. Features and benefits. 3. Applications. 4. Ordering information. Dual D-type flip-flop Rev. 9 10 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Applications The is a dual D-type flip-flop that features independent set-direct input (SD), clear-direct input

More information

74HC4040; 74HCT4040. 12-stage binary ripple counter

74HC4040; 74HCT4040. 12-stage binary ripple counter Rev. 5 3 February 2016 Product data sheet 1. General description 2. Features and benefits 3. Applications 4. Ordering information The is a with a clock input (CP), an overriding asynchronous master reset

More information

8-bit binary counter with output register; 3-state

8-bit binary counter with output register; 3-state Rev. 3 24 February 2016 Product data sheet 1. General description The is an 8-bit binary counter with a storage register and 3-state outputs. The storage register has parallel (Q0 to Q7) outputs. The binary

More information

Planar PIN diode in a SOD323 very small plastic SMD package.

Planar PIN diode in a SOD323 very small plastic SMD package. Rev. 8 12 May 2015 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD323 very small plastic SMD package. 1.2 Features and benefits High voltage, current controlled

More information

74HC107; 74HCT107. Dual JK flip-flop with reset; negative-edge trigger

74HC107; 74HCT107. Dual JK flip-flop with reset; negative-edge trigger Rev. 5 30 November 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a dual negative edge triggered JK flip-flop featuring individual J and K inputs,

More information

Hex buffer with open-drain outputs

Hex buffer with open-drain outputs Rev. 5 27 October 20 Product data sheet. General description The provides six non-inverting buffers. The outputs are open-drain and can be connected to other open-drain outputs to implement active-low

More information

74HC138; 74HCT138. 3-to-8 line decoder/demultiplexer; inverting

74HC138; 74HCT138. 3-to-8 line decoder/demultiplexer; inverting Rev. 6 28 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The decodes three binary weighted address inputs (A0, A1 and A2) to eight mutually exclusive

More information

14-stage ripple-carry binary counter/divider and oscillator

14-stage ripple-carry binary counter/divider and oscillator Rev. 8 25 March 2016 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The is a with three oscillator terminals (RS, REXT and CEXT), ten buffered outputs (Q3 to

More information

Low-power D-type flip-flop; positive-edge trigger; 3-state

Low-power D-type flip-flop; positive-edge trigger; 3-state Rev. 8 29 November 2012 Product data sheet 1. General description The provides the single D-type flip-flop with 3-state output. The flip-flop will store the state of data input (D) that meet the set-up

More information

74AUP1G74. 1. General description. 2. Features and benefits. Low-power D-type flip-flop with set and reset; positive-edge trigger

74AUP1G74. 1. General description. 2. Features and benefits. Low-power D-type flip-flop with set and reset; positive-edge trigger Low-power D-type flip-flop with set and reset; positive-edge trigger Rev. 9 6 January 2014 Product data sheet 1. General description The provides a low-power, low-voltage single positive-edge triggered

More information

NPN wideband transistor in a SOT89 plastic package.

NPN wideband transistor in a SOT89 plastic package. SOT89 Rev. 05 21 March 2013 Product data sheet 1. Product profile 1.1 General description in a SOT89 plastic package. 1.2 Features and benefits High gain Gold metallization ensures excellent reliability

More information

74HC165; 74HCT165. 8-bit parallel-in/serial out shift register

74HC165; 74HCT165. 8-bit parallel-in/serial out shift register Rev. 4 28 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Applications 4. Ordering information The is an 8-bit serial or parallel-in/serial-out shift register. The device

More information

Bus buffer/line driver; 3-state

Bus buffer/line driver; 3-state Rev. 11 2 July 2012 Product data sheet 1. General description The provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). HIGH-level

More information

74HC573; 74HCT573. 1. General description. 2. Features and benefits. Octal D-type transparent latch; 3-state

74HC573; 74HCT573. 1. General description. 2. Features and benefits. Octal D-type transparent latch; 3-state Rev. 7 4 March 2016 Product data sheet 1. General description The is an 8-bit D-type transparent latch with 3-state outputs. The device features latch enable (LE) and output enable (OE) inputs. When LE

More information

Buffer with open-drain output. The 74LVC1G07 provides the non-inverting buffer.

Buffer with open-drain output. The 74LVC1G07 provides the non-inverting buffer. Rev. 11 29 June 2012 Product data sheet 1. General description The provides the non-inverting buffer. The output of this device is an open drain and can be connected to other open-drain outputs to implement

More information

74HC4066; 74HCT4066. Quad single-pole single-throw analog switch

74HC4066; 74HCT4066. Quad single-pole single-throw analog switch Rev. 8 3 December 2015 Product data sheet 1. General description The is a quad single pole, single throw analog switch. Each switch features two input/output terminals (ny and nz) and an active HIGH enable

More information

74HC393; 74HCT393. Dual 4-bit binary ripple counter

74HC393; 74HCT393. Dual 4-bit binary ripple counter Rev. 6 3 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The 74HC393; 7474HCT393 is a dual 4-stage binary ripple counter. Each counter features

More information

74HC4067; 74HCT4067. 16-channel analog multiplexer/demultiplexer

74HC4067; 74HCT4067. 16-channel analog multiplexer/demultiplexer Rev. 6 22 May 2015 Product data sheet 1. General description The is a single-pole 16-throw analog switch (SP16T) suitable for use in analog or digital 16:1 multiplexer/demultiplexer applications. The switch

More information

3-input EXCLUSIVE-OR gate. The 74LVC1G386 provides a 3-input EXCLUSIVE-OR function.

3-input EXCLUSIVE-OR gate. The 74LVC1G386 provides a 3-input EXCLUSIVE-OR function. Rev. 02 3 September 2007 Product data sheet 1. General description The provides a 3-input EXCLUSIVE-OR function. The input can be driven from either 3.3 or 5 V devices. This feature allows the use of these

More information

Schottky barrier quadruple diode

Schottky barrier quadruple diode Rev. 3 8 October 2012 Product data sheet 1. Product profile 1.1 General description with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated

More information

74HC74; 74HCT74. 1. General description. 2. Features and benefits. 3. Ordering information

74HC74; 74HCT74. 1. General description. 2. Features and benefits. 3. Ordering information Rev. 5 3 December 2015 Product data sheet 1. General description 2. Features and benefits 3. Ordering information The 74HC74 and 74HCT74 are dual positive edge triggered D-type flip-flop. They have individual

More information

10 ma LED driver in SOT457

10 ma LED driver in SOT457 SOT457 in SOT457 Rev. 1 20 February 2014 Product data sheet 1. Product profile 1.1 General description LED driver consisting of resistor-equipped PNP transistor with two diodes on one chip in an SOT457

More information

74HC32; 74HCT32. 1. General description. 2. Features and benefits. Quad 2-input OR gate

74HC32; 74HCT32. 1. General description. 2. Features and benefits. Quad 2-input OR gate Rev. 5 4 September 202 Product data sheet. General description The is a quad 2-input OR gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages

More information

Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control

Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control TO-92 Rev. 9 9 November 2 Product data sheet. Product profile. General description Passivated, sensitive gate triacs in a SOT54 plastic package.2 Features and benefits Designed to be interfaced directly

More information

Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package

Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package Rev. 6 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C

More information

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description SOT2 Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small SOT2 (TO-26AB) Surface-Mounted

More information

8-bit synchronous binary down counter

8-bit synchronous binary down counter Rev. 5 21 April 2016 Product data sheet 1. General description The is an 8-bit synchronous down counter. It has control inputs for enabling or disabling the clock (CP), for clearing the counter to its

More information

74HC595; 74HCT595. 1. General description. 2. Features and benefits. 3. Applications

74HC595; 74HCT595. 1. General description. 2. Features and benefits. 3. Applications 8-bit serial-in, serial or parallel-out shift register with output latches; 3-state Rev. 8 25 February 2016 Product data sheet 1. General description The is an 8-bit serial-in/serial or parallel-out shift

More information

IP4220CZ6. 1. Product profile. Dual USB 2.0 integrated ESD protection. 1.1 General description. 1.2 Features and benefits. 1.

IP4220CZ6. 1. Product profile. Dual USB 2.0 integrated ESD protection. 1.1 General description. 1.2 Features and benefits. 1. SOT457 Rev. 5 8 July 2011 Product data sheet 1. Product profile 1.1 General description The is designed to protect I/O lines sensitive to capacitive load, such as USB 2.0, ethernet, Digital Video Interface

More information

The sensor can be operated at any frequency between DC and 1 MHz.

The sensor can be operated at any frequency between DC and 1 MHz. Rev. 6 18 November 2010 Product data sheet 1. Product profile 1.1 General description The is a sensitive magnetic field sensor, employing the magneto-resistive effect of thin film permalloy. The sensor

More information

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package

More information

74HC4051; 74HCT4051. 8-channel analog multiplexer/demultiplexer

74HC4051; 74HCT4051. 8-channel analog multiplexer/demultiplexer Rev. 8 5 February 2016 Product data sheet 1. General description The is a single-pole octal-throw analog switch (SP8T) suitable for use in analog or digital 8:1 multiplexer/demultiplexer applications.

More information

74HC595; 74HCT595. 1. General description. 2. Features and benefits. 3. Applications

74HC595; 74HCT595. 1. General description. 2. Features and benefits. 3. Applications 8-bit serial-in, serial or parallel-out shift register with output latches; 3-state Rev. 7 26 January 2015 Product data sheet 1. General description The are high-speed Si-gate CMOS devices and are pin

More information

DISCRETE SEMICONDUCTORS DATA SHEET M3D848. CGD923 870 MHz, 20 db gain power doubler amplifier. Product specification 2002 Oct 08

DISCRETE SEMICONDUCTORS DATA SHEET M3D848. CGD923 870 MHz, 20 db gain power doubler amplifier. Product specification 2002 Oct 08 DISCRETE SEMICONDUCTORS DATA SHEET M3D848 2002 Oct 08 FEATURES High output capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Gold metallization ensures

More information

74ALVC164245. 16-bit dual supply translating transceiver; 3-state. This device can be used as two 8-bit transceivers or one 16-bit transceiver.

74ALVC164245. 16-bit dual supply translating transceiver; 3-state. This device can be used as two 8-bit transceivers or one 16-bit transceiver. Rev. 8 15 March 2012 Product data sheet 1. General description The is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. The is a 16-bit

More information

DISCRETE SEMICONDUCTORS DATA SHEET. dbook, halfpage M3D088. BB201 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12

DISCRETE SEMICONDUCTORS DATA SHEET. dbook, halfpage M3D088. BB201 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12 DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Low-voltage variable capacitance double 2001 Oct 12 Low-voltage variable capacitance double FEATURES Excellent linearity C1: 95 pf; C7.5: 27.6

More information

BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1.

BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1. Rev. 6 4 September 04 Product data sheet. Product profile. General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package Configuration

More information

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS DISCRETE SEMICONDUCTORS DATA SHEET N-channel silicon field-effect transistors Supersedes data of April 995 996 Jul BF5A; BF5B; BF5C FEATURES Interchangeability of drain and source connections Frequencies

More information

NX3L4051. 1. General description. 2. Features and benefits. Single low-ohmic 8-channel analog switch

NX3L4051. 1. General description. 2. Features and benefits. Single low-ohmic 8-channel analog switch Rev. 5 3 July 2012 Product data sheet 1. General description The is a low-ohmic 8-channel analog switch, suitable for use as an analog or digital multiplexer/demultiplexer. The has three digital select

More information

74HC123; 74HCT123. Dual retriggerable monostable multivibrator with reset

74HC123; 74HCT123. Dual retriggerable monostable multivibrator with reset Rev. 9 19 January 2015 Product data sheet 1. General description The are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with

More information

Femtofarad bidirectional ESD protection diode

Femtofarad bidirectional ESD protection diode Rev. 3 24 October 2011 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 Surface-Mounted

More information

NTB0102. 1. General description. 2. Features and benefits. Dual supply translating transceiver; auto direction sensing; 3-state

NTB0102. 1. General description. 2. Features and benefits. Dual supply translating transceiver; auto direction sensing; 3-state Dual supply translating transceiver; auto direction sensing; 3-state Rev. 4 23 January 2013 Product data sheet 1. General description The is a 2-bit, dual supply translating transceiver with auto direction

More information

45 V, 100 ma NPN general-purpose transistors

45 V, 100 ma NPN general-purpose transistors Rev. 9 2 September 214 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number

More information

LIN-bus ESD protection diode

LIN-bus ESD protection diode Rev. 3 31 May 2011 Product data sheet 1. Product profile 1.1 General description in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package designed to protect one automotive Local Interconnect

More information

DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors

DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors DISCRETE SEMICONDUCTORS DATA SHEET Product specification April 24 Product specification GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT

More information

IP4294CZ10-TBR. ESD protection for ultra high-speed interfaces

IP4294CZ10-TBR. ESD protection for ultra high-speed interfaces XSON1 Rev. 4 1 November 213 Product data sheet 1. Product profile 1.1 General description The device is designed to protect high-speed interfaces such as SuperSpeed USB, High-Definition Multimedia Interface

More information

BLL6G1214L-250. 1. Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1.

BLL6G1214L-250. 1. Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1. BLL6G1214L-25 Rev. 1 16 February 212 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

More information

Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package

Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package TO-220AC 27 May 2015 Product data sheet 1. General description Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package 2. Features and benefits Fast switching Low thermal resistance

More information

HEF4013B. 1. General description. 2. Features and benefits. 3. Applications. 4. Ordering information. Dual D-type flip-flop

HEF4013B. 1. General description. 2. Features and benefits. 3. Applications. 4. Ordering information. Dual D-type flip-flop Rev. 8 21 November 2011 Product data sheet 1. General description 2. Features and benefits 3. pplications The is a dual -type flip-flop that features independent set-direct input (S), clear-direct input

More information

CAN bus ESD protection diode

CAN bus ESD protection diode Rev. 04 15 February 2008 Product data sheet 1. Product profile 1.1 General description in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller

More information

NPN wideband silicon germanium RF transistor

NPN wideband silicon germanium RF transistor Rev. 1 29 April 211 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F

More information

NPN wideband silicon RF transistor

NPN wideband silicon RF transistor Rev. 1 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The is part of the

More information

PUSB3FR4. 1. Product profile. ESD protection for ultra high-speed interfaces. 1.1 General description. 1.2 Features and benefits. 1.

PUSB3FR4. 1. Product profile. ESD protection for ultra high-speed interfaces. 1.1 General description. 1.2 Features and benefits. 1. XSON1 Rev. 1 26 January 215 Product data sheet 1. Product profile 1.1 General description The device is designed to protect high-speed interfaces such as SuperSpeed USB 3.1 at 1 Gbps, High-Definition Multimedia

More information

PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1.

PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1. Rev. 02 20 August 2009 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package

More information

74LVC1G74. 1. General description. 2. Features and benefits. Single D-type flip-flop with set and reset; positive edge trigger

74LVC1G74. 1. General description. 2. Features and benefits. Single D-type flip-flop with set and reset; positive edge trigger Rev. 12 2 pril 2013 Product data sheet 1. General description The is a single positive edge triggered -type flip-flop with individual data () inputs, clock (P) inputs, set (S) and reset (R) inputs, and

More information

General purpose low power phase control General purpose low power switching Solid-state relay. Symbol Parameter Conditions Min Typ Max Unit V DRM

General purpose low power phase control General purpose low power switching Solid-state relay. Symbol Parameter Conditions Min Typ Max Unit V DRM TO-92 May 25 Product data sheet. General description Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package intended to be interfaced directly to microcontrollers, logic integrated

More information

ESD protection for high-speed interfaces

ESD protection for high-speed interfaces Rev. 1 1 October 212 Product data sheet 1. Product profile 1.1 General description The device is designed to protect high-speed interfaces such as High-Definition Multimedia Interface (HDMI), DisplayPort,

More information

4-bit binary full adder with fast carry CIN + (A1 + B1) + 2(A2 + B2) + 4(A3 + B3) + 8(A4 + B4) = = S1 + 2S2 + 4S3 + 8S4 + 16COUT

4-bit binary full adder with fast carry CIN + (A1 + B1) + 2(A2 + B2) + 4(A3 + B3) + 8(A4 + B4) = = S1 + 2S2 + 4S3 + 8S4 + 16COUT Rev. 03 11 November 2004 Product data sheet 1. General description 2. Features The is a high-speed Si-gate CMOS device and is pin compatible with low power Schottky TTL (LSTTL). The is specified in compliance

More information

PRTR5V0U2F; PRTR5V0U2K

PRTR5V0U2F; PRTR5V0U2K Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection devices in leadless ultra small

More information

Medium power Schottky barrier single diode

Medium power Schottky barrier single diode Rev. 03 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated

More information

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03.

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 04. 2004 Feb 03. DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 Supersedes data of 2002 Oct 04 2004 Feb 03 FEATURES Collector current capability I C = 200 ma Collector-emitter voltage V CEO = 40 V. APPLICATIONS

More information

INTEGRATED CIRCUITS. 74LVC08A Quad 2-input AND gate. Product specification IC24 Data Handbook. 1997 Jun 30

INTEGRATED CIRCUITS. 74LVC08A Quad 2-input AND gate. Product specification IC24 Data Handbook. 1997 Jun 30 INTEGRATED CIRCUITS IC24 Data Handbook 1997 Jun 30 FEATURES Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1A Inputs accept voltages up to 5.5 V CMOS low power consumption

More information

40 V, 200 ma NPN switching transistor

40 V, 200 ma NPN switching transistor Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic

More information

MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. http://www.philips.semiconductors.com use http://www.nxp.com

MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. http://www.philips.semiconductors.com use http://www.nxp.com Rev. 3 21 November 27 Product data sheet Dear customer, IMPORTANT NOTICE As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets

More information

BT138-600E. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data. 4Q Triac 30 August 2013 Product data sheet

BT138-600E. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data. 4Q Triac 30 August 2013 Product data sheet TO-22AB 3 August 213 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-22AB) plastic package intended for use in general purpose bidirectional

More information

30 V, single N-channel Trench MOSFET

30 V, single N-channel Trench MOSFET SOT883B Rev. 1 11 May 212 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN16B-3 (SOT883B) Surface-Mounted

More information

BT139B-600. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data. 4Q Triac 27 September 2013 Product data sheet

BT139B-600. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data. 4Q Triac 27 September 2013 Product data sheet D2PAK 27 September 213 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT44 (D2PAK) surface-mountable plastic package intended for use in applications requiring high

More information

How To Make An Electric Static Discharge (Esd) Protection Diode

How To Make An Electric Static Discharge (Esd) Protection Diode Rev. 01 0 October 2008 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device

More information

PMEG3015EH; PMEG3015EJ

PMEG3015EH; PMEG3015EJ Rev. 03 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for

More information

PMEG2020EH; PMEG2020EJ

PMEG2020EH; PMEG2020EJ Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for

More information

PMEG3005EB; PMEG3005EL

PMEG3005EB; PMEG3005EL Rev. 0 29 November 2006 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress

More information

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 23 Apr 9 24 Jan 16 FEATURES Low current (max. 1 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. PINNING PIN

More information

AAV003-10E Current Sensor

AAV003-10E Current Sensor Datasheet AAV003-10E Current Sensor Key Features For Low Current Detection On-Chip Current Strap for Precise Operation 80 ma to +80 ma Linear Range Sensitivity up to 2 mv/ma AC or DC Measurement Ultraminiature

More information

AN1991. Audio decibel level detector with meter driver

AN1991. Audio decibel level detector with meter driver Rev. 2.1 20 March 2015 Application note Document information Info Keywords Abstract Content SA604A, LM358, RSSI, cellular radio The SA604A can provide a logarithmic response proportional to the input signal

More information

Single-channel common-mode filter with integrated ESD protection network

Single-channel common-mode filter with integrated ESD protection network Single-channel common-mode filter with integrated ESD protection network Rev. 2 29 May 2013 Product data sheet 1. Product profile 1.1 General description 2-lines (one differential channel) common-mode

More information

BZT52H series. Single Zener diodes in a SOD123F package

BZT52H series. Single Zener diodes in a SOD123F package Rev. 3 7 December 2010 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features

More information

SCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.

SCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. Rev. 5 2 March 29 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability

More information

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1. Rev. 04 30 December 2008 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for

More information

65 V, 100 ma PNP/PNP general-purpose transistor

65 V, 100 ma PNP/PNP general-purpose transistor Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

More information

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21.

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21. DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D87 PBSS554Z 4 V low V CEsat PNP transistor Supersedes data of 21 Jan 26 21 Sep 21 FEATURES Low collector-emitter saturation voltage High current capability Improved

More information

2PD601ARL; 2PD601ASL

2PD601ARL; 2PD601ASL Rev. 01 6 November 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1.

More information