Index 1. HISTORY CHANGE GENERAL DESCRIPTION FEATURES INTRODUCTION... 3

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2 Index 1. HISTORY CHANGE GENERAL DESCRIPTION FEATURES INTRODUCTION FUNCTIONAL FEATURES MODULE BLOCK DIAGRAM PIN ASSIGNMENT (TOP VIEW) PIN DESCRIPTION FUNCTIONAL SPECIFICATION TEMPERATURE LIMIT RATINGS DC POWER SUPPLY CURRENT CONSUMPTION WLAN 2.4-GHZ RF PERFORMANCE WLAN 5-GHZ RF PERFORMANCE BT RF PERFORMANCE PACKAGE INFORMATION RECOMMEND LAYOUT INFORMATION MODULE MECHANICAL OUTLINE APPLICATION REFERENCE CIRCUIT SMT AND BAKING RECOMMENDATION BAKING RECOMMENDATION SMT RECOMMENDATION Page 1

3 1. HISTORY CHANGE Revision Date Description D Initial Document creation. D Modify pin description and reference circuit. D Modify RF Performance D Modify Page Version D Modify operating temperature D Modify Recommend Layout Information Page 2

4 2. GENERAL DESCRIPTION The WN is a highly integrated single-chip a/b/g/n/ac 1T1R USB2.0 WLAN controller. It combines a WLAN MAC, a 1T1R capable WLAN baseband, BT Protocol Stack (LM, LL, and LE), BT Baseband, modem, and WLAN/BT RF in a single chip. The WN provides a complete solution for a high throughput performance integrated wireless LAN and Bluetooth device FEATURES INTRODUCTION Dimension, L x W x H = 19 mm x 17mm x 2.2 mm Operates in 2.4GHz and 5GHz frequency bands CMOS MAC, Baseband PHY, and RF in a single chip for IEEE a/b/g/n/ac Draft 3.0 Compatible WLAN. 86.7M bps receive PHY rate and 86.7Mbps transmit PHY rate using 20MHz bandwidth 200Mbps receive PHY rate and 200Mbps transmit PHY rate using 40MHz bandwidth 433.3Mbps receive PHY rate and 433.3Mbps transmit PHY rate using 80MHz bandwidth IEEE e QoS Enhancement (WMM) support i (WPA, WPA2). Open, shared key, and pair-wise key authentication services h TPC, Spectrum Measurement k Radio Resource Measurement Support 2.4GHz and 5GHz band channels Compatible with Bluetooth v2.1 and v3.0 Systems Supports Bluetooth 4.0 Low Energy(BLE) Page 3

5 3. FUNCTIONAL FEATURES 3.1. Module Block Diagram 3.2. Pin Assignment (Top view) Page 4

6 3.3. Pin Description Pin Signal Type Description 1 GND Power Ground 2 RF I/O RF port for AUX 3 GND Power Ground 4 RF I/O RF port for MAIN 5 GND Power Ground 6 LED0 Output LED function 7 VDD Power 3.3V power supply 8 GND Power Ground 9 HSDM I/O High-Speed USB D- Signal 10 HSDP I/O High-Speed USB D+ Signal 11 GND Power Ground 12 PDn Input Enable device 13 DEV_WAKE_HOST Output This pin is General Purpose I/O pin shared with Device wakes up host 14 HOST_WAKE_DEV Input This pin is General Purpose I/O pin shared with Host wakes up device 15 WL_DIS Input This pin can optional force WLAN function entering Radio-Off mode or shutting down the chip depending on internal non-volatile memory setting when WL_DIS inputs low (active low) 16 BT_DIS Input This pin can optional force Bluetooth function entering Radio-Off mode or shutting down the chip depending on internal non-volatile memory setting when BT_DIS inputs low (active low) Page 5

7 4. FUNCTIONAL SPECIFICATION Product Description WLAN Standard IEEE802.11a/b/g/n and ac draft 3.0 compliant Bluetooth v2.1+edr, v3.0, v3.0+hs, v4.0 Standard Main Chipset RTL8821AU Host Interface USB 2.0 Dimension 19.0mm x 17.0mm x 2.2mm Package Half-hole PCB module Electrical Specifications Frequency Range a/ac/n ISM Band: to GHz b/g/n ISM Band: to GHz WLAN: a: 54, 48, 36, 24, 18, 12, 9, 6 Mbps b: 11, 5.5, 2, 1 Mbps g: 54, 48, 36, 24, 18, 12, 9, 6 Mbps Data Rate n: MCS0~MCS ac: MSC0~MCS9 Modulation Technique Operational Channel Bluetooth: Basic rate: 1Mbps Enhance data rate: 2, 3Mbps WLAN: a: BPSK, QPSK, 16-QAM, 64-QAM b: DBPSK, DQPSK, CCK g: BPSK, QPSK, 16-QAM, 64-QAM n: BPSK, QPSK, 16-QAM, 64-QAM ac BPSK, QPSK, 16-QAM, 64-QAM, 256-QAM Bluetooth: GFSK, π/4 DQPSK, 8DPSK WLAN: 11: (Ch. 1-11) United States 13: (Ch. 1-13) Europe 14: (Ch. 1-14) Japan Bluetooth: Ch0 to Ch78 Security WPA, WPA-PSK, WPA2, WPA2-PSK, WEP 64bit & 128bit, Operating Voltage IEEE 3.3V x, IEEE i Page 6

8 4.1. Temperature Limit Ratings Parameter Min. Max. Units Storage Temperature Ambient Operating Temperature o c o c 4.2. DC POWER SUPPLY Symbol Parameter Min Typ. Max Units VDD USB interface VDD V 4.3. Current Consumption Mode Condition Typical Current at 3.3V 2.4G Active Mode 5G Active Mode TX at 11 Mbps 230mA TX at 54 Mbps 150mA TX at HT20-MCS7 150mA TX at HT40-MCS7 120mA RX at 11Mbps 110mA RX at 54Mbps 110mA RX at HT20-MCS7 110mA RX at HT40-MCS7 110mA TX at 6 Mbps 370mA TX at 54 Mbps 200mA TX at HT20-MCS7 200mA TX at HT40-MCS7 170mA TX at AC80-MCS7 150mA RX at 6Mbps 110mA RX at 54Mbps 110mA RX at HT20-MCS7 110mA RX at HT40-MCS7 110mA RX at AC80-MCS9 130mA Page 7

9 4.4. WLAN 2.4-GHz RF Performance 2.4G WLAN Transmitter Characteristics Condition Min Typ. Max Unit 11b Output Power 11M CCK 16 1M DSSS 16 11g Output Power 54M OFDM M OFDM 15.5 dbm 11n Output Power MCS MCS G WLAN Receiver Characteristics Condition Min Tyd Max Unit 11b Rx Sensitivity 11g Rx Sensitivity 11n Rx Sensitivity 11M CCK -80 1M Barker M OFDM -63 6M OFDM -70 MCS7-63 MCS0-70 dbm 4.5. WLAN 5-GHz RF Performance 5G WLAN Transmitter Characteristics Condition Min Typ. Max Unit 11a Output Power 54M OFDM 12 6M OFDM 14 11n Output Power MCS7 12 MCS0 14 dbm 11ac Output Power NSS1 MCS9 9.5 NSS1 MCS Page 8

10 5G WLAN Receiver Characteristics Condition Min Tyd Max Unit 11a Rx Sensitivity 54M OFDM -63 6M OFDM n Rx Sensitivity MCS7-63 MCS0-80 dbm 11ac Rx Sensitivity MCS9-63 MCS BT RF Performance Bluetooth Transmitter Characteristics Condition Min Tyd Max Unit BR 1M 3 Bluetooth Output Power EDR 2M 3 EDR 3M 3 dbm BLE 3 Bluetooth Receiver Characteristics Condition Min Tyd Max Unit BR 1M -70 Bluetooth Rx Sensitivity EDR 2M -70 EDR 3M -70 dbm BLE -70 Page 9

11 5. PACKAGE INFORMATION 5.1. Recommend Layout Information Page 10

12 5.2. Module mechanical outline TOP VIEW Page 11

13 5.3. Application Reference Circuit 6. SMT AND BAKING RECOMMENDATION 6.1. Baking Recommendation Baking condition: - Follow MSL Level 4 to do baking process. - After bag is opened, devices that will be subjected to reflow solder or other high temperature process must be a) Mounted within 72 hours of factory conditions <30 C/60% RH, or b) Stored at <10% RH. - Devices require bake, before mounting, if Humidity Indicator Card reads >10% If baking is required, Devices may be baked for 8 hrs at 125 C. Page 12

14 6.2. SMT Recommendation Recommended Reflow profile: H No. Item Temperature ( C) Time (sec) 1 Pre-heat D1: 140 ~ D2: 200 T1: 80 ~ Soldering D2: = 220 T2: 60 ± 10 3 Peak-Temp. D3: 250 C max Note: (1) Reflow soldering is recommended two times maximum. (1) Add Nitrogen while Reflow process: SMT solder ability will be better. Stencil thickness: 0.1~ 0.15 mm (Recommended) Soldering paste (without Pb): Recommended SENJU N705-GRN3360-K2-V can get better soldering effects. Page 13