REV /2012 NANYA TECHNOLOGY CORPORATION NANYA reserves the right to change products and specifications without notice.

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1 Based on DDR3(L)-1333/ Mx16 and 512Mx8 SDRAM B-Die Features Performance: Speed Sort PC3(L) CG PC3(L) DIMM CAS Latency DI Unit fck Clock Freqency MHz tck Clock Cycle ns fdq DQ Burst Freqency Mbps 204-Pin Small Outline Dual In-Line Memory Module (SO-DIMM) 2GB: 256Mx64 based on 256Mx16 DDR3 SDRAM B-Die devices. 4GB / 8GB: 512Mx64 / 1024Mx64 based on 512Mx8 DDR3 SDRAM B-Die devices. Intended for 667MHz/800MHz applications Inputs and outputs are SSTL-15 compatible VDD = VDDQ = 1.35V V/+0.1V (Backward Compatible to VDD = VDDQ = 1.5V ±0.075V) VDD = VDDQ = 1.5V 0.075V SDRAMs have 8 internal banks for concurrent operation Differential clock inputs Data is read or written on both clock edges DRAM DLL aligns DQ and transitions with clock transitions. Auto Self-Refresh option Nominal and Dynamic On-Die Termination support Extended operating temperature rage Serial Presence Detect Programmable Operation: - DIMM Latency: 5, 6, 7,8,9,10,11 - Burst Type: Sequential or Interleave - Burst Length: BC4, BL8 - Operation: Burst Read and Write Address and control signals are fully synchronous to positive clock edge Two different termination values (Rtt_Nom & Rtt_WR) 15/10/1 (row/column/rank) Addressing for 2GB 16/10/1 (row/column/rank) Addressing for 4GB 16/10/2 (row/column/rank) Addressing for 8GB Gold contacts SDRAMs are in 96-ball BGA Package (2GB) SDRAMs are in 78-ball BGA Package (4GB/8GB) RoHS compliance and Halogen Free Description NT2GC64B(C)H4B0PS / NT4GC64B(C)88B0(1)NS / NT8GC64B(C)8HB0NS are unbuffered 204-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as one rank of 256Mx64 (2GB), one rank of 512Mx64 (4GB) and two ranks of 1024Mx64 (8GB) high-speed memory array. Modules use four 256Mx16 (2GB) 96-ball BGA packaged devices, eight 512Mx8 (4GB) and sixteen 512Mx8 (8GB) 78-ball BGA packaged devices. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All Nanya DDR3 SODIMMs provide a high-performance, flexible 8-byte interface in a space-saving footprint. The DIMM is intended for use in applications operating of 667MHz/800MHz clock speeds and achieves high-speed data transfer rates of 10600Mbps/12800Mbps. Prior to any access operation, the device latency and burst/length/operation type must be programmed into the DIMM by address inputs A0-A15 and I/O inputs BA0~BA2 using the mode register set cycle. The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer. REV 1.1 1

2 Ordering Information Part Number Speed Organization Power Leads Note NT2GC64CH4B0PS-CG DDR3L-1333 PC3L MHz CL = 9) 256Mx64 NT4GC64C88B0NS-CG DDR3L-1333 PC3L MHz CL = 9) 512Mx64 NT8GC64C8HB0NS-CG DDR3L-1333 PC3L MHz CL = 9) 1024Mx64 NT2GC64CH4B0PS-DI DDR3L-1600 PC3L MHz CL = 11) 256Mx64 NT4GC64C88B0NS-DI DDR3L-1600 PC3L MHz CL = 11) 512Mx64 NT4GC64C88B1NS-DI DDR3L-1600 PC3L MHz CL = 11) 512Mx64 NT8GC64C8HB0NS-DI DDR3L-1600 PC3L MHz CL = 11) 1024Mx64 NT2GC64BH4B0PS-CG DDR PC MHz CL = 9) 256Mx64 NT4GC64B88B0NS-CG DDR PC MHz CL = 9) 512Mx64 NT8GC64B8HB0NS-CG DDR PC MHz CL = 9) 1024Mx64 NT2GC64BH4B0PS-DI DDR PC MHz CL = 11) 256Mx64 NT4GC64B88B0NS-DI DDR PC MHz CL = 11) 512Mx64 NT8GC64B8HB0NS-DI DDR PC MHz CL = 11) 1024Mx V 1.50V Gold Pin Description Pin Name Description Pin Name Description 0, 1 Clock Inputs, positive line DQ0-DQ63 Data input/output, Clock Inputs, negative line 0-7 Data strobes E0, E1 Clock Enable - Data strobes complement Row Address Strobe 0-7 Data Masks Column Address Strobe Temperature event pin Write Enable Reset pin, Chip Selects V REFDQ, V REFCA Input/output Reference A0-A9, A11, A13-A15 Address Inputs V DDSPD SPD and Temp sensor power A10/AP Address Input/Auto-Precharge SA0, SA1 Serial Presence Detect Address Inputs A12/ Address Input/Burst Chop Vtt Termination voltage BA0-BA2 SDRAM Bank Address Inputs V SS Ground 0, 1 Active termination control lines V DD Core and I/O power SCL Serial Presence Detect Clock Input NC No Connect SDA Serial Presence Detect Data input/output REV 1.1 2

3 DDR3 SDRAM Pin Assignment Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back 1 V REFDQ 2 V SS 53 DQ19 54 V SS 105 V DD 106 V DD 155 V SS 156 V SS 3 V SS 4 DQ4 55 V SS 56 DQ A10/AP 108 BA1 157 DQ DQ46 5 DQ0 6 DQ5 57 DQ24 58 DQ BA DQ DQ47 7 DQ1 8 V SS 59 DQ25 60 V SS 111 V DD 112 V DD 161 V SS 162 V SS 9 V SS V SS DQ DQ DQ DQ53 13 V SS 14 V SS 65 V SS 66 V SS 117 V DD 118 V DD 167 V SS 168 V SS 15 DQ2 16 DQ6 67 DQ26 68 DQ A13/NC DQ3 18 DQ7 69 DQ27 70 DQ NC V SS 19 V SS 20 V SS 71 V SS 72 V SS 123 V DD 124 V DD 173 V SS 174 DQ54 21 DQ8 22 DQ12 73 E0 74 E1 125 NC 126 V REFCA 175 DQ DQ55 23 DQ9 24 DQ13 75 V DD 76 V DD 127 V SS 128 V SS 177 DQ V SS 25 V SS 26 V SS 77 NC 78 A DQ DQ V SS 180 DQ BA2 80 A DQ DQ DQ DQ V DD 82 V DD 133 V SS 134 V SS 183 DQ V SS 31 V SS 32 V SS 83 A12/ 84 A V SS DQ10 34 DQ14 85 A9 86 A V SS DQ11 36 DQ15 87 V DD 88 V DD 139 V SS 140 DQ V SS 190 V SS 37 V SS 38 V SS 89 A8 90 A6 141 DQ DQ DQ DQ62 39 DQ16 40 DQ20 91 A5 92 A4 143 DQ V SS 193 DQ DQ63 41 DQ17 42 DQ21 93 V DD 94 V DD 145 V SS 146 DQ V SS 196 V SS 43 V SS 44 V SS 95 A3 96 A2 147 DQ DQ SA A1 98 A0 149 DQ V SS 199 V DDSPD 200 SDA V SS 99 V DD 100 V DD 151 V SS SA1 202 SCL 49 V SS 50 DQ Vtt 204 Vtt 51 DQ18 52 DQ REV 1.1 3

4 Input/Output Functional Description Symbol Type Polarity Function 0, 1, E0, E1,,, 0, Input Input Input Input Input Input I/O Cross point Active High Active Low Active Low Active High Active High Cross point The system clock inputs. All address and command lines are sampled on the cross point of the rising edge of and falling edge of. A Delay Locked Loop (DLL) circuit is driven from the clock inputs and output timing for read operations is synchronized to the input clock. Activates the DDR3 SDRAM signal when high and deactivates the signal when low. By deactivating the clocks, E low initiates the Power Down mode or the Self Refresh mode. Enables the associated DDR3 SDRAM command decoder when low and disables the command decoder when high. When the command decoder is disabled, new commands are ignored but previous operations continue, Rank 0 is selected by ; Rank 1 is selected by When sampled at the positive rising edge of and falling edge of, signals,, define the operation to be executed by the SDRAM. Asserts on-die termination for DQ,,, and signals if enabled via the DDR3 SDRAM mode register. The data write masks, associated with one data byte. In Write mode, operates as a byte mask by allowing input data to be written if it is low but blocks the write operation if it is high. In Read mode, lines have no effect. The data strobes, associated with one data byte, sourced with data transfers. In Write mode, the data strobe is sourced by the controller and is centered in the data window. In Read mode, the data strobe is sourced by the DDR3 SDRAM and is sent at the leading edge of the data window. signals are complements, and timing is relative to the cross point of respective and. If the module is to be operated in single ended strobe mode, all signals must be tied on the system board to VSS and DDR3 SDRAM mode registers programmed appropriately. BA0, BA1, BA2 Input - Selects which DDR3 SDRAM internal bank of four or eight is activated. A0 A9 A10/AP A11 A12/ A13 A15 Input - DQ0 DQ63 Input - Data Input/Output pins. During a Bank Activate command cycle, defines the row address when sampled at the cross point of the rising edge of and falling edge of. During a Read or Write command cycle, defines the column address when sampled at the cross point of the rising edge of and falling edge of. In addition to the column address, AP is used to invoke autoprecharge operation at the end of the burst read or write cycle. If AP is high, autoprecharge is selected and BA0-BAn defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command cycle, AP is used in conjunction with BA0-BAn to control which bank(s) to precharge. If AP is high, all banks will be precharged regardless of the state of BA0-BAn inputs. If AP is low, then BA0-BAn are used to define which bank to precharge. V DD, V DDSPD, V SS Supply - Power supplies for core, I/O, Serial Presence Detect, Temp sensor, and ground for the module. V REFDQ, V REFCA Supply - Reference voltage for SSTL15 inputs SDA I/O - This is a bidirectional pin used to transfer data into or out of the SPD EEPROM and temp sensor. A resistor must be connected from the SDA bus line to VDDSPD on the system planar to act as a pull up. SCL Input - This signal is used to clock data into and out of the SPD EEPROM and Temp sensor. SA0 SA2 Input - Address pins used to select the Serial Presence Detect and Temp sensor base address. Output - The pin is reserved for use to flag critical module temperature. Input - This signal resets the DDR3 SDRAM Supply - Reference pin for calibration REV 1.1 4

5 Functional Block Diagram [2GB 1 Rank, 512Mx16 DDR3 SDRAMs] 0 0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 1 1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 L L I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 U U I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 D0 4 4 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 L L I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 U U I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 D2 2 2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 L L I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 U U I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 D1 6 6 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 L L I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 U U I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 D3 BA0-BA1 A0-A15 BA0-BA1 : SDRAMs D0-D3 A0-A15 : SDRAMs D0-D3 : SDRAMs D0-D3 : SDRAMs D0-D3 : SDRAMs D0-D3 VDDSPD VDD/VDDQ VREF VSS VDDID SPD D0-D3 D0-D3 D0-D loads 2 loads SCL WP Serial PD A0 A1 A2 SDA SA0 SA1 SA2 Notes : 1. DQ wiring may differ from that described in this drawing. 2. DQ///E/S relationships are maintained as shown. 3. DQ/// resistors are 22+/- 5% Ohms. 4. VDDID strap connections (for memory device VDD, VDDQ): STRAP OUT (OPEN): VDD = VDDQ STRAP IN (VSS): VDD is not equal to VDDQ. REV 1.1 5

6 Functional Block Diagram [4GB 1 Rank, 512Mx8 DDR3 SDRAMs] DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D0 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D1 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D2 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D3 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D7 SCL SA0 SA1 E0, A[15:0],,,, 0, BA[2:0], SCL A0 A1 A2 SPD WP DDR3 SDRAM DDR3 SDRAM SDA VTT VDDSPD VDD/VDDQ VREFDQ VSS VREFCA BA0-BA2 A0-A15 E0 0 0 SPD D0-D7 D0-D7 D0-D7 D0-D7 BA0-BA2: SDRAMs D0-D7 A0-A15: SDRAMs D0-D7 : SDRAMs D0-D7 : SDRAMs D0-D7 E: SDRAMs D0-D7 : SDRAMs D0-D7 : SDRAMs D0-D7 : SDRAMs D0-D7 : SDRAMs D0-D7 : SDRAMs D0-D7 VDD Notes : 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. DQ/////E/S relationships must be maintained as shown. 3. For each DRAM, a unique resistor is connected to ground. The resistor is 240Ω ±1%. 4. One SPD exists per module. REV 1.1 6

7 Functional Block Diagram [8GB 2 Ranks, 512Mx8 DDR3 SDRAMs] 1 E1 1 0 E0 0 Vtt VDD Cterm Vtt VDD Cterm Vtt 3 3 DQ[24:31] D11 D3 D4 D DQ[32:39] E 1 1 DQ[8:15] D1 E 0 0 D0 E 2 2 DQ[16:23] D2 E E D9 E D8 E D10 E E D14 E D15 E D13 E E D6 6 6 DQ[48:55] E D7 7 7 DQ[56:63] E D5 5 5 DQ[40:47] E SCL SA0 SA1 Notes : SCL A0 A1 A2 SPD WP SDA 1. DQ wiring may differ from that shown however, DQ,,, and relationships are maintained as shown. Vtt VDDSPD VREFCA VREFDQ VDD VSS 0 1 E0 E1 0 1 Vtt SPD D0-D15 D0-D15 D0-D15 D0-D15, SPD D0-D7 D8-D15 D0-D7 D8-D15 D0-D7 D8-D15 D0-D7 D8-D15 D0-D7 D8-D15 D0-D15 REV 1.1 7

8 Environmental Requirements Symbol Parameter Rating Units T OPR Operating Temperature (ambient) 0 to 85 C T STG Storage Temperature -55 to +100 C Note: Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Absolute Maximum DC Ratings Symbol Parameter Rating Units Note V DD Voltage on VDD pins relative to Vss -0.4 V ~ V V 1, 3 V DDQ Voltage on VDDQ pins relative to Vss -0.4 V ~ V V 1, 3 V IN, V OUT Voltage on I/O pins relative to Vss -0.4 V ~ V V 1 T STG Storage Temperature -55 to +100 C 1, 2 Note: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability 2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard. 3. VDD and VDDQ must be within 300 mv of each other at all times;and VREF must be not greater Operating temperature Conditions Symbol Parameter Rating Units Note T OPER Normal Operating Temperature Range 0 to 85 C 1, 2 Extended Temperature Range 85 to 95 C 1, 3 Note: 1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For measurement conditions, please refer to the JEDEC document JESD The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be maintained between 0 to 85 C under all operating conditions 3. Some applications require operation of the DRAM in the Extended Temperature Range between 85 C and 95 C case temperature. Full specifications are supported in this range, but the following additional conditions apply: a) Refresh commands must be doubled in frequency, therefore reducing the Refresh interval trefi to 3.9 μs. It is also possible to specify a component with 1X refresh (trefi to 7.8μs) in the Extended Temperature Range. Please refer to supplier data sheet and/or the DIMM SPD for option availability. b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b) or enable the optional Auto Self-Refresh mode (MR2 A6 = 1b and MR2 A7 = 0b). Please refer to the supplier data sheet and/or the DIMM SPD for Auto Self-Refresh option availability, Extended Temperature Range support and trefi requirements in the Extended Temperature Range. DC Electrical Characteristics and Operating Conditions Symbol Parameter Min Typ Max Units Notes VDD Supply Voltage V 1,2 VDDQ Output Supply Voltage V 1,2 Note: 1. Under all conditions VDDQ must be less than or equal to VDD. 2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together. REV 1.1 8

9 Single-Ended AC and DC Input Levels for Command and Address Symbol Parameter DDR (-BE) DDR (-CG) DDR3-1600(-DI) Min. Max. Min. Max. Min. Max. Units Note VIH.CA(DC) DC Input Logic High Vref VDD Vref VDD Vref VDD V 1 VIL.CA(DC) DC Input Logic Low VSS Vref VSS Vref VSS Vref V 1 VIH.CA(AC) AC Input Logic High Vref Note 2 Vref Note 2 Vref Note 2 V 1, 2 VIL.CA(AC) AC Input Logic Low Note 2 Vref Note 2 Vref Note 2 Vref V 1, 2 VIH.CA(AC150) AC Input Logic High Vref Note 2 Vref Note 2 Vref Note 2 V 1, 2 VIL.CA(AC150) AC Input Logic Low Note 2 Vref Note 2 Vref Note 2 Vref V 1, 2 V RefCA(DC) Reference Voltage for ADD, CMD Inputs 0.49 x VDD 0.51 x VDD 0.49 x VDD 0.51 x VDD 0.49 x VDD 0.51 x VDD V 3, 4 Note: 1. For input only pins except RESET#. Vref = VrefCA(DC). 2. See Overshoot and Undershoot Specifications in the device datasheet. 3. The ac peak noise on VRef may not allow VRef to deviate from VRefDQ(DC) by more than VDD (for reference: approx. +/- 15 mv). 4. For reference: approx. VDD/2 +/- 15 mv. Single-Ended AC and DC Input Levels for DQ and Symbol Parameter DDR (-BE) DDR (-CG) DDR3-1600(-DI) Min. Max. Min. Max. Min. Max. Units Note VIH.DQ(DC) DC Input Logic High Vref VDD Vref VDD Vref VDD V 1 VIL.DQ(DC) DC Input Logic Low VSS Vref VSS Vref VSS Vref V 1 VIH.DQ(AC) AC Input Logic High Vref Note 2 Vref Note 2 Vref Note 2 V 1, 2, 5 VIL.DQ(AC) AC Input Logic Low Note 2 Vref Note 2 Vref Note 2 Vref V 1, 2, 5 V RefDQ(DC) Reference Voltage for DQ, Inputs 0.49 x VDD 0.51 x VDD 0.49 x VDD 0.51 x VDD 0.49 x VDD 0.51 x VDD V 3, 4 Note: 1. For input only pins except RESET#. Vref = VrefDQ(DC). 2. See Overshoot and Undershoot Specifications in the device datasheet. 3. The ac peak noise on VRef may not allow VRef to deviate from VRefDQ(DC) by more than VDD (for reference: approx. +/- 15 mv). 4. For reference: approx. VDD/2 +/- 15 mv. 5. Single-ended swing requirement for, # is 350 mv (peak to peak). Differential swing requirement for - # is 700 mv (peak to peak). REV 1.1 9

10 Operating, Standby, and Refresh Currents T CASE = 0 C ~ 85 C; V DDQ = V DD = 1.35V V / +0.1V [PC3L (-CG) 2GB / 4GB / 8GB] Symbol Parameter/Condition 2GB 4GB 8GB Unit IDD0 Operating One Bank Active-Precharge Current ma IDD1 Operating One Bank Active-Read-Precharge Current ma IDD2P0 Precharge Power-Down Current Slow Exit ma IDD2P1 Precharge Power-Down Current Fast Exit ma IDD2Q Precharge Quiet Standby Current ma IDD2N Precharge Standby Current ma IDD3P Active Power-Down Current ma IDD3N Active Standby Current ma IDD4R Operating Burst Read Current ma IDD4W Operating Burst Write Current ma IDD5B Burst Refresh Current ma IDD6 Self Refresh Current: Normal Temperature Range ma IDD7 Operating Bank Interleave Read Current ma Operating, Standby, and Refresh Currents T CASE = 0 C ~ 85 C; V DDQ = V DD = 1.35V V / +0.1V [PC3L (-DI) 2GB / 4GB / 8GB] Symbol Parameter/Condition 2GB 4GB 8GB Unit IDD0 Operating One Bank Active-Precharge Current ma IDD1 Operating One Bank Active-Read-Precharge Current ma IDD2P0 Precharge Power-Down Current Slow Exit ma IDD2P1 Precharge Power-Down Current Fast Exit ma IDD2Q Precharge Quiet Standby Current ma IDD2N Precharge Standby Current ma IDD3P Active Power-Down Current ma IDD3N Active Standby Current ma IDD4R Operating Burst Read Current ma IDD4W Operating Burst Write Current ma IDD5B Burst Refresh Current ma IDD6 Self Refresh Current: Normal Temperature Range ma IDD7 Operating Bank Interleave Read Current ma REV

11 Operating, Standby, and Refresh Currents T CASE = 0 C ~ 85 C; V DDQ = V DD = 1.5V ± 0.075V [PC (-CG) 2GB / 4GB / 8GB] Symbol Parameter/Condition 2GB 4GB 8GB Unit IDD0 Operating One Bank Active-Precharge Current ma IDD1 Operating One Bank Active-Read-Precharge Current ma IDD2P0 Precharge Power-Down Current Slow Exit ma IDD2P1 Precharge Power-Down Current Fast Exit ma IDD2Q Precharge Quiet Standby Current ma IDD2N Precharge Standby Current ma IDD3P Active Power-Down Current ma IDD3N Active Standby Current ma IDD4R Operating Burst Read Current ma IDD4W Operating Burst Write Current ma IDD5B Burst Refresh Current ma IDD6 Self Refresh Current: Normal Temperature Range ma IDD7 Operating Bank Interleave Read Current ma Operating, Standby, and Refresh Currents T CASE = 0 C ~ 85 C; V DDQ = V DD = 1.5V ± 0.075V [PC (-DI) 2GB / 4GB / 8GB] Symbol Parameter/Condition 2GB 4GB 8GB Unit IDD0 Operating One Bank Active-Precharge Current ma IDD1 Operating One Bank Active-Read-Precharge Current ma IDD2P0 Precharge Power-Down Current Slow Exit ma IDD2P1 Precharge Power-Down Current Fast Exit ma IDD2Q Precharge Quiet Standby Current ma IDD2N Precharge Standby Current ma IDD3P Active Power-Down Current ma IDD3N Active Standby Current ma IDD4R Operating Burst Read Current ma IDD4W Operating Burst Write Current ma IDD5B Burst Refresh Current ma IDD6 Self Refresh Current: Normal Temperature Range ma IDD7 Operating Bank Interleave Read Current ma REV

12 Standard Speed Bins DDR3-1066MHz Speed Bin DDR CL-nRCD-nRP (-BE) Unit Parameter Symbol Min Max Internal read command to first data taa ns ACT to internal read or write delay time trcd ns PRE command period trp ns ACT to ACT or REF command period trc ns ACT to PRE command period tras *tREFI ns CL=5 CWL=5 t(avg) ns CWL=6 t(avg) Reserved ns CL=6 CWL=5 t(avg) ns CWL=6 t(avg) Reserved ns CL=7 CWL=5 t(avg) Reserved ns CWL=6 t(avg) <2.5 ns CL=8 CWL=5 t(avg) Reserved ns CWL=6 t(avg) <2.5 ns Supported CL Settings 5,6,7,8 Supported CWL Settings 5,6 DDR3-1333MHz Speed Bin DDR CL-nRCD-nRP (-CG) Unit Parameter Symbol Min Max Internal read command to first data taa (13.125) 5, ns ACT to internal read or write delay time trcd (13.125) 5,11 - ns PRE command period trp (13.125) 5,11 - ns ACT to ACT or REF command period trc 49.5 (49.125) 5,11 - ns ACT to PRE command period tras *tREFI ns CWL=5 t(avg) ns CL=5 CWL=6 t(avg) Reserved Reserved ns CWL=7 t(avg) Reserved Reserved ns CWL=5 t(avg) ns CL=6 CWL=6 t(avg) Reserved Reserved ns CWL=7 t(avg) Reserved Reserved ns CWL=5 t(avg) Reserved Reserved ns CL=7 CWL=6 t(avg) 1.875* <2.5* ns CWL=7 t(avg) Reserved Reserved ns CWL=5 t(avg) Reserved Reserved ns CL=8 CWL=6 t(avg) <2.5 ns CWL=7 t(avg) Reserved Reserved ns CWL=5 t(avg) Reserved Reserved ns CL=9 CWL=6 t(avg) Reserved Reserved ns CWL=7 t(avg) <1.875 ns CWL=5 t(avg) Reserved Reserved ns CL=10 CWL=6 t(avg) Reserved Reserved ns CWL=7 t(avg) 1.500* <1.875* ns Supported CL Settings 5,6,8,(7),9,(10) Supported CWL Settings 5,6,7 REV

13 DDR3-1600MHz Speed Bin DDR CL-nRCD-nRP (-DI) Unit Parameter Symbol Min Max Internal read command to first data taa (13.125) 5, ns ACT to internal read or write delay time trcd (13.125) 5,11 - ns PRE command period trp (13.125) 5,11 - ns ACT to ACT or REF command period trc (48.125) 5,11 - ns ACT to PRE command period tras *tREFI ns CWL=5 t(avg) ns CL=5 CWL=6 t(avg) Reserved Reserved ns CWL=7 t(avg) Reserved Reserved ns CWL=5 t(avg) ns CL=6 CWL=6 t(avg) Reserved Reserved ns CWL=7 t(avg) Reserved Reserved ns CWL=5 t(avg) Reserved Reserved ns CL=7 CWL=6 t(avg) 1.875* <2.5* ns CWL=7 t(avg) Reserved Reserved ns CWL=5 t(avg) Reserved Reserved ns CL=8 CWL=6 t(avg) <2.5 ns CWL=7 t(avg) Reserved Reserved ns CWL=5 t(avg) Reserved Reserved ns CL=9 CWL=6 t(avg) Reserved Reserved ns CWL=7 t(avg) <1.875 ns CWL=5 t(avg) Reserved Reserved ns CL=10 CWL=6 t(avg) Reserved Reserved ns CWL=7 t(avg) 1.500* <1.875* ns CWL=5 t(avg) Reserved Reserved ns CL=11 CWL=6 t(avg) Reserved Reserved ns CWL=7 t(avg) Reserved Reserved ns CWL=8 t(avg) 1.25* <1.5* ns Supported CL Settings 5,6,(7),8,(9),10,11 Supported CWL Settings 5,6,7,8 *: Optional REV

14 AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1066MHz) DDR Parameter Symbol Units Min. Max. Clock Timing Minimum Clock Cycle Time (DLL off mode) t (DLL_OFF) 8 - ns Average Clock Period t(avg) Refer to "Standard Speed Bins) ps Average high pulse width tch(avg) t(avg) Average low pulse width tcl(avg) t(avg) Min.: t(avg)min + tjit(per)min Absolute Clock Period t(abs) Max.: t(avg)max + tjit(per)max ps Absolute clock HIGH pulse width tch(abs) t(avg) Absolute clock LOW pulse width tcl(abs) t(avg) Clock Period Jitter JIT(per) ps Clock Period Jitter during DLL locking period JIT(per, lck) ps Cycle to Cycle Period Jitter tjit(cc) ps Cycle to Cycle Period Jitter during DLL locking period JIT(cc, lck) ps Duty Cycle Jitter tjit(duty) - - ps Cumulative error across 2 cycles terr(2per) ps Cumulative error across 3 cycles terr(3per) ps Cumulative error across 4 cycles terr(4per) ps Cumulative error across 5 cycles terr(5per) ps Cumulative error across 6 cycles terr(6per) ps Cumulative error across 7 cycles terr(7per) ps Cumulative error across 8 cycles terr(8per) ps Cumulative error across 9 cycles terr(9per) ps Cumulative error across 10 cycles terr(10per) ps Cumulative error across 11 cycles terr(11per) ps Cumulative error across 12 cycles terr(12per) ps terr(nper)min = ( ln(n)) * tjit(per)min Cumulative error across n = 13, , 50 cycles terr(nper) terr(nper)max = ( ln(n)) * tjit(per)max ps Data Timing, # to DQ skew, per group, per access tq ps DQ output hold time from, # tqh t(avg) DQ low-impedance time from, # tlz(dq) ps DQ high impedance time from, # thz(dq) ps Data setup time to, # referenced to Vih(ac) / Vil(ac) levels Data setup time to, # referenced to Vih(ac) / Vil(ac) levels tds(base) AC ps tds(base) AC ps Data hold time from, # referenced to Vih(dc) / Vil(dc) levels tdh(base) DC ps DQ and Input pulse width for each input tdipw 490 ps Data Strobe Timing,# differential READ Preamble trpre 0.9 Note 19 t(avg), # differential READ Postamble trpst 0.3 Note 11 t(avg), # differential output high time tqsh t(avg), # differential output low time tqsl t(avg), # differential WRITE Preamble twpre t(avg), # differential WRITE Postamble twpst t(avg), # rising edge output access time from rising, # t t(avg) and # low-impedance time (Referenced from RL - 1) tlz() t(avg) and # high-impedance time (Referenced from RL + BL/2) thz() t(avg), # differential input low pulse width tl t(avg), # differential input high pulse width th t(avg), # rising edge to, # rising edge ts t(avg), # falling edge setup time to, # rising edge tdss t(avg), # falling edge hold time from, # rising edge tdsh t(avg) Notes REV

15 Command and Address Timing DLL locking time tdllk Internal READ Command to PRECHARGE Command delay Delay from start of internal write transaction to internal read command trtp twtr trtpmin.: max(4, 7.5ns) trtpmax.: - twtrmin.: max(4, 7.5ns) twtrmax.: WRITE recovery time twr 15 - ns Mode Register Set command cycle time tmrd 4 - Mode Register Set command update delay ACT to internal read or write delay time PRE command period ACT to ACT or REF command period tmod trcd trp trc tmodmin.: max(12, 15ns) tmodmax.: CAS# to CAS# command delay tccd 4 - Auto precharge write recovery + precharge time tdal(min) WR + roundup(trp / t(avg)) Multi-Purpose Register Recovery Time tmprr 1 - ACTIVE to PRECHARGE command period tras Standard Speed Bins ACTIVE to ACTIVE command period for 1KB page size trrd max(4, 7.5ns) - ACTIVE to ACTIVE command period for 2KB page size trrd trrdmin.: max(4, 10ns) trrdmax.: Four activate window for 1KB page size tfaw ns Four activate window for 2KB page size tfaw 50 - ns Command and Address setup time to, # referenced to Vih(ac) / Vil(ac) levels Command and Address hold time from, # referenced to Vih(dc) / Vil(dc) levels Command and Address setup time to, # referenced to Vih(ac) / Vil(ac) levels tis(base) ps tih(base) ps tis(base) AC ps Control and Address Input pulse width for each input tipw ps Calibration Timing Power-up and RESET calibration time tinit Normal operation Full calibration time toper Normal operation Short calibration time tcs 64 - Reset Timing Exit Reset from E HIGH to a valid command Self Refresh Timings Exit Self Refresh to commands not requiring a locked DLL Exit Self Refresh to commands requiring a locked DLL Minimum E low width for Self Refresh entry to exit timing Valid Clock Requirement after Self Refresh Entry (SRE) or Power-Down Entry (PDE) Valid Clock Requirement before Self Refresh Exit (SRX) or Power-Down Exit (PDX) or Reset Exit Power Down Timings Exit Power Down with DLL on to any valid command; Exit Precharge Power Down with DLL frozen to commands not requiring a locked DLL Exit Precharge Power Down with DLL frozen to commands requiring a locked DLL E minimum pulse width Command pass disable delay Power Down Entry to Exit Timing Timing of ACT command to Power Down entry Timing of PRE or PREA command to Power Down entry txpr txs txsdll tesr tsre tsrx txp txpdll te tcpded tpd tactpden tprpden txprmin.: max(5, trfc(min) + 10ns) txprmax.: - txsmin.: max(5, trfc(min) + 10ns) txsmax.: - txsdllmin.: tdllk(min) txsdllmax.: - tesrmin.: te(min) + 1 tesrmax.: - tsremin.: max(5, 10 ns) tsremax.: - tsrxmin.: max(5, 10 ns) tsrxmax.: - txpmin.: max(3, 7.5ns) txpmax.: - txpdllmin.: max(10, 24ns) txpdllmax.: - temin.: max( ns) temax.: - tcpdedmin.: 1 tcpdedmin.: - tpdmin.: te(min) tpdmax.: 9*tREFI tactpdenmin.: 1 tactpdenmax.: - tprpdenmin.: 1 tprpdenmax.: - REV

16 Timing of RD/RDA command to Power Down entry trdpden trdpdenmin.: RL+4+1 trdpdenmax.: - Timing of WR command to Power Down entry twrpdenmin.: WL (twr / t(avg)) twrpden (BL8OTF, BL8MRS, BC4OTF) twrpdenmax.: - Timing of WRA command to Power Down entry twrapdenmin.: WL+4+WR+1 twrapden (BL8OTF, BL8MRS, BC4OTF) twrapdenmax.: - Timing of WR command to Power Down entry (BC4MRS) twrpden twrpdenmin.: WL (twr / t(avg))twrpdenmax.: - Timing of WRA command to Power Down entry twrapdenmin.: WL + 2 +WR + 1 twrapden (BC4MRS) twrapdenmax.: - Timing of REF command to Power Down entry trefpden trefpdenmin.: 1 trefpdenmax.: - Timing of MRS command to Power Down entry tmrspden tmrspdenmin.: tmod(min) tmrspdenmax.: - Timings high time without write command or H4min.: 4 H4 with write command and BC4 H4max.: - high time with Write command and BL8 H8 H8min.: 6 H8max.: - Asynchronous RTT turn-on delay (Power-Down with DLL frozen) taonpd ns Asynchronous RTT turn-off delay (Power-Down with DLL frozen) taofpd ns RTT turn-on taon ps RTT_Nom and RTT_WR turn-off time from Loff reference taof t(avg) RTT dynamic change skew tadc t(avg) Write Leveling Timings First /# rising edge after write leveling mode is programmed twlmrd 40 - /# delay after write leveling mode is programmed twlen 25 - Write leveling setup time from rising, # crossing to rising, # crossing twls ps Write leveling hold time from rising, # crossing to rising, # crossing twlh ps Write leveling output delay twlo 0 9 ns Write leveling output error twloe 0 2 ns REV

17 AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1333MHz) Clock Timing Parameter Symbol DDR Minimum Clock Cycle Time (DLL off mode) t (DLL_OFF) 8 - ns Average Clock Period t(avg) Refer to "Standard Speed Bins) ps Average high pulse width tch(avg) t(avg) Average low pulse width tcl(avg) t(avg) Absolute Clock Period t(abs) REV Min. Min.: t(avg)min + tjit(per)min Max.: t(avg)max + tjit(per)max Absolute clock HIGH pulse width tch(abs) t(avg) Absolute clock LOW pulse width tcl(abs) t(avg) Clock Period Jitter JIT(per) ps Clock Period Jitter during DLL locking period JIT(per, lck) ps Cycle to Cycle Period Jitter tjit(cc) ps Cycle to Cycle Period Jitter during DLL locking period JIT(cc, lck) ps Duty Cycle Jitter tjit(duty) - - ps Cumulative error across 2 cycles terr(2per) ps Cumulative error across 3 cycles terr(3per) ps Cumulative error across 4 cycles terr(4per) ps Cumulative error across 5 cycles terr(5per) ps Cumulative error across 6 cycles terr(6per) ps Cumulative error across 7 cycles terr(7per) ps Cumulative error across 8 cycles terr(8per) ps Cumulative error across 9 cycles terr(9per) ps Cumulative error across 10 cycles terr(10per) ps Cumulative error across 11 cycles terr(11per) ps Cumulative error across 12 cycles terr(12per) ps Cumulative error across n = 13, , 50 cycles Data Timing terr(nper) Max. terr(nper)min = ( ln(n)) * tjit(per)min terr(nper)max = ( ln(n)) * tjit(per)max, # to DQ skew, per group, per access tq ps DQ output hold time from, # tqh t(avg) DQ low-impedance time from, # tlz(dq) ps DQ high impedance time from, # thz(dq) ps Data setup time to, # referenced to Vih(ac) / Vil(ac) levels Data setup time to, # referenced to Vih(ac) / Vil(ac) levels tds(base) AC175 tds(base) AC150 Data hold time from, # referenced to Vih(dc) / Vil(dc) levels tdh(base) DC100 - ps 30 ps 65 ps DQ and Input pulse width for each input tdipw ps Data Strobe Timing,# differential READ Preamble trpre 0.9 Note 19 t(avg), # differential READ Postamble trpst 0.3 Note 11 t(avg), # differential output high time tqsh t(avg), # differential output low time tqsl t(avg), # differential WRITE Preamble twpre t(avg), # differential WRITE Postamble twpst t(avg), # rising edge output access time from rising, # t t(avg) and # low-impedance time (Referenced from RL - 1) and # high-impedance time (Referenced from RL + BL/2) ps ps Units tlz() t(avg) thz() t(avg), # differential input low pulse width tl t(avg), # differential input high pulse width th t(avg), # rising edge to, # rising edge ts t(avg), # falling edge setup time to, # rising edge tdss t(avg), # falling edge hold time from, # rising edge tdsh t(avg) Command and Address Timing DLL locking time tdllk Notes

18 Internal READ Command to PRECHARGE Command delay trtp trtpmin.: max(4, 7.5ns) trtpmax.: - Delay from start of internal write twtrmin.: max(4, 7.5ns) twtr transaction to internal read command twtrmax.: WRITE recovery time twr 15 - ns Mode Register Set command cycle time tmrd 4 - Mode Register Set command update delay tmod tmodmin.: max(12, 15ns) tmodmax.: ACT to internal read or write delay time trcd PRE command period trp ACT to ACT or REF command period trc CAS# to CAS# command delay tccd 4 Auto precharge write recovery + precharge time tdal(min) WR + roundup(trp / t(avg)) Multi-Purpose Register Recovery Time tmprr 1 - ACTIVE to PRECHARGE command period tras Standard Speed Bins ACTIVE to ACTIVE command period for 1KB page size trrd trrdmin.: max(4, 6ns) trrdmax.: ACTIVE to ACTIVE command period for 2KB page size trrd trrdmin.: max(4, 7.5ns) trrdmax.: Four activate window for 1KB page size tfaw 30 0 ns Four activate window for 2KB page size tfaw 45 0 ns Command and Address setup time to, # referenced to Vih(ac) / Vil(ac) levels tis(base) 65 - ps Command and Address hold time from, # referenced to Vih(dc) / Vil(dc) levels tih(base) ps Command and Address setup time to, # referenced to Vih(ac) / Vil(ac) levels tis(base) AC ps Control and Address Input pulse width for each input tipw ps Calibration Timing Power-up and RESET calibration time tinit Normal operation Full calibration time toper Normal operation Short calibration time tcs 64 - Reset Timing Exit Reset from E HIGH to a valid command txpr txprmin.: max(5, trfc(min) + 10ns) txprmax.: - Self Refresh Timings Exit Self Refresh to commands not requiring a locked DLL txs txsmin.: max(5, trfc(min) + 10ns) txsmax.: - Exit Self Refresh to commands requiring a locked DLL txsdll txsdllmin.: tdllk(min) txsdllmax.: - Minimum E low width for Self Refresh entry to exit timing tesr tesrmin.: te(min) + 1 tesrmax.: - Valid Clock Requirement after Self Refresh Entry (SRE) tsremin.: max(5, 10 ns) tsre or Power-Down Entry (PDE) tsremax.: - Valid Clock Requirement before Self Refresh Exit (SRX) tsrxmin.: max(5, 10 ns) tsrx or Power-Down Exit (PDX) or Reset Exit tsrxmax.: - Power Down Timings Exit Power Down with DLL on to any valid command; Exit Precharge Power Down with DLL frozen to commands not requiring a locked DLL txp txpmin.: max(3, 6ns) txpmax.: - Exit Precharge Power Down with DLL frozen to commands requiring a locked DLL txpdll txpdllmin.: max(10, 24ns) txpdllmax.: - E minimum pulse width te temin.: max(3,5.625ns) temax.: - Command pass disable delay tcpded tcpdedmin.: 1 tcpdedmin.: - Power Down Entry to Exit Timing tpd tpdmin.: te(min) tpdmax.: 9*tREFI Timing of ACT command to Power Down entry tactpden tactpdenmin.: 1 tactpdenmax.: - Timing of PRE or PREA command to Power Down entry tprpden tprpdenmin.: 1 tprpdenmax.: - REV

19 Timing of RD/RDA command to Power Down entry trdpden trdpdenmin.: RL+4+1 trdpdenmax.: - Timing of WR command to Power Down entry twrpdenmin.: WL (twr / t(avg)) twrpden (BL8OTF, BL8MRS, BC4OTF) twrpdenmax.: - Timing of WRA command to Power Down entry twrapdenmin.: WL+4+WR+1 twrapden (BL8OTF, BL8MRS, BC4OTF) twrapdenmax.: - Timing of WR command to Power Down entry (BC4MRS) twrpden twrpdenmin.: WL (twr / t(avg))twrpdenmax.: - Timing of WRA command to Power Down entry twrapdenmin.: WL + 2 +WR + 1 twrapden (BC4MRS) twrapdenmax.: - Timing of REF command to Power Down entry trefpden trefpdenmin.: 1 trefpdenmax.: - Timing of MRS command to Power Down entry tmrspden tmrspdenmin.: tmod(min) tmrspdenmax.: - Timings high time without write command or H4min.: 4 H4 with write command and BC4 H4max.: - high time with Write command and BL8 H8 H8min.: 6 H8max.: - Asynchronous RTT turn-on delay (Power-Down with DLL frozen) taonpd ns Asynchronous RTT turn-off delay (Power-Down with DLL frozen) taofpd ns RTT turn-on taon ps RTT_Nom and RTT_WR turn-off time from Loff reference taof t(avg) RTT dynamic change skew tadc t(avg) Write Leveling Timings First /# rising edge after write leveling mode is programmed twlmrd 40 - /# delay after write leveling mode is programmed twlen 25 - Write leveling setup time from rising, # crossing to rising, # crossing twls ps Write leveling hold time from rising, # crossing to rising, # crossing twlh ps Write leveling output delay twlo 0 9 ns Write leveling output error twloe 0 2 ns REV

20 AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1600MHz) Clock Timing Parameter Symbol DDR Minimum Clock Cycle Time (DLL off mode) t (DLL_OFF) 8 - ns Average Clock Period t(avg) Refer to "Standard Speed Bins) ps Average high pulse width tch(avg) t(avg) Average low pulse width tcl(avg) t(avg) Absolute Clock Period t(abs) REV Min. Min.: t(avg)min + tjit(per)min Max.: t(avg)max + tjit(per)max Absolute clock HIGH pulse width tch(abs) t(avg) Absolute clock LOW pulse width tcl(abs) t(avg) Clock Period Jitter JIT(per) ps Clock Period Jitter during DLL locking period JIT(per, lck) ps Cycle to Cycle Period Jitter tjit(cc) ps Cycle to Cycle Period Jitter during DLL locking period JIT(cc, lck) ps Duty Cycle Jitter tjit(duty) - - ps Cumulative error across 2 cycles terr(2per) ps Cumulative error across 3 cycles terr(3per) ps Cumulative error across 4 cycles terr(4per) ps Cumulative error across 5 cycles terr(5per) ps Cumulative error across 6 cycles terr(6per) ps Cumulative error across 7 cycles terr(7per) ps Cumulative error across 8 cycles terr(8per) ps Cumulative error across 9 cycles terr(9per) ps Cumulative error across 10 cycles terr(10per) ps Cumulative error across 11 cycles terr(11per) ps Cumulative error across 12 cycles terr(12per) ps Cumulative error across n = 13, , 50 cycles Data Timing terr(nper) Max. terr(nper)min = ( ln(n)) * tjit(per)min terr(nper)max = ( ln(n)) * tjit(per)max, # to DQ skew, per group, per access tq ps DQ output hold time from, # tqh t(avg) DQ low-impedance time from, # tlz(dq) ps DQ high impedance time from, # thz(dq) ps Data setup time to, # referenced to Vih(ac) / Vil(ac) levels Data setup time to, # referenced to Vih(ac) / Vil(ac) levels tds(base) AC175 tds(base) AC150 Data hold time from, # referenced to Vih(dc) / Vil(dc) levels tdh(base) DC100 - ps 10 ps 45 ps DQ and Input pulse width for each input tdipw ps Data Strobe Timing,# differential READ Preamble trpre 0.9 Note 19 t(avg), # differential READ Postamble trpst 0.3 Note 11 t(avg), # differential output high time tqsh t(avg), # differential output low time tqsl t(avg), # differential WRITE Preamble twpre t(avg), # differential WRITE Postamble twpst t(avg), # rising edge output access time from rising, # t t(avg) and # low-impedance time (Referenced from RL - 1) and # high-impedance time (Referenced from RL + BL/2) ps ps Units tlz() t(avg) thz() t(avg), # differential input low pulse width tl t(avg), # differential input high pulse width th t(avg), # rising edge to, # rising edge ts t(avg), # falling edge setup time to, # rising edge tdss t(avg), # falling edge hold time from, # rising edge tdsh t(avg) Command and Address Timing DLL locking time tdllk Notes

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