ECPE Workshop "Failure Analysis Tools for Wide Band-Gap Devices 16-17 October 2014, Rouen, France Industry Oriented Platform Dedicated to Reliability Case CECOVIM Abstract: This industry oriented platform dedicated to reliability of mechatronic systems, CECOVIM, results from a research projet, AUDACE, initiated in 2008 with two major electronics manufacturers, Thales and VALEO. The aim of this project was to improve reliability and provide accurate tools to predict the lifetime of complex mechatronic systems using new device technologies such as GaN power transistors and/or SiC high voltage diodes. One major output of this project was the creation of an associated lab between two academic labs (GPM and LOFIMS) and one SME (CEVAA), gathering the means (innovative ageing benches, depackaging machines, microscopes ) and methodologies (reliability-oriented models, failure analysis flow ) developed during this project. The aim is to bring to electronic and more widely mechatronic systems manufacturers, appropriate answers to their problems, through services, tests and technical support. The structure of this platform will be presented and two cases of typical studies concerning reliability of AlGaN/GaN power HEMTs and SiC Schottky power diodes will be highlighted. About the speaker: Jean Baptiste FONDER was born in Charleville-Mézières, France, in July 1986. He received the Diploma degree in electrical engineering, specialized in microwave electronics, from the ENSEA (Ecole Nationale Supérieure de l'electronique et de ses Applications) and the Master degree "Electronique des Systèmes Autonomes" from the Cergy Pontoise University in 2009. He joigned in October 2009 to October 2012 the ETIS (Equipes Traitement de l'information et Systèmes) and GPM (Groupe de Physique des Matériaux) labs as a PhD student where he worked on the reliability study of Gallium Nitride power HEMTs for radiofrequency amplifiers, for the AUDACE project. From November 2012 to December 2013, he gets involved in a post-doctoral training in the GPM lab to work on reliability of AlGaN/GaN HEMT power switches for power conversion. From January 2014, he is with the CEVAA where he is R&D manager for the CECOVIM platform. Jean-Baptiste Fonder - CEVAA R&D Manager 2, rue Joseph Fourier Technopôle du Madrillet 76800 St Etienne du Rouvray Phone : +33 (0)2.32.91.73.50 Fax : +33 (0)2.32.91.73.59 @ : jb.fonder@cevaa.com http : http://www.cevaa.com
Industry Oriented Platform Dedicated to Reliability Case CECOVIM
Outline 1 / CECOVIM PLATFORM 2 / TECHNICAL CASE STUDIES Case 1 : ESD stress and thermal storage on 1200V Schottky diodes for power conversion applications Case 2 : Pulsed-RF life tests on power AlGaN/GaN HEMTs for RADAR applications 3 / CONCLUSIONS
1 / CECOVIM Platform
BRIEF HISTORY OF CECOVIM: 2008 : Start of AUDACE Project (Root cause failure analysis on devices for mechatronic embedded systems) 2012 : End of AUDACE Project 2013 : Creation of CECOVIM, an Associated Lab between CEVAA, GPM and LOFIMS 2014 January 1 st : Official start of CECOVIM PARTNERS
CECOVIM Presentation: Dedicated joint research lab to the mastering of ageing for mechatronic systems. High technologic and human skills. Easily reachable, in network and from an unique head office, CEVAA. Well suited to manufacturer needs and able to support them to improve their process and competitiveness, by offering : Service provision, Reliabilistic Design / Tests / Qualification Project engineering / Research projects Training / Technology transfer
ORGANISATION Skills : Vibratory dynamic analysis Functions : Head Office Market research, promotion, communication Offer coordination and development Business model management Smart Management Quality Functions : Service, R&D, Technological surveillance Scientific approach, state of the Art CECOVIM Functions : Technical management Technical quote proposition Service, R&D, Technological surveillance Scientific approach, state of the Art Skills : Stochastic simulations electro-thermo-mechanic computing and modeling Training Skills : Ageing on radiofrequency and power conversion devices Failure Analysis Training
Added Value Mechatronic System VALUE CHAIN Individual or mixed stresses Thermal Electric Vibratory Failure analysis Physical phenomena modeling Working profiles definition Mechatronic systems qualification Ruggedness stress tests Long span multiphysical stress tests Physicial measurement Expertise (material expertise) Enhancing reliability of technological processes Research projects Improving existing reliability handbooks Research projects Training
Reliability (Long span tests on systems or sub-systems, qualification, burn-in ) Durability (Temperature, vibrations, shocks, humidity, electric stress ) Research study (New device technology characterization, material analysis )
2 / Technical Case Studies
Focus on Electron Devices activities Test Jig Design Ageing Tests Modelling & lifetime prediction Electrical Characterization INTERVENTION SPECTRUM Depackaging & Failure Analysis From Device to Device
Case 1 : ESD stress and thermal storage on 1200V Schottky diodes for power conversion applications
Case 1 : ESD stress and thermal storage on 1200V SiC Schottky diodes for power conversion applications Issue : Device integration for power conversion is a major concern for tomorrow s energy production and management systems. The reliability of the whole system is ensured on one hand by an accurate choice of the semiconductor technology but on the other, by a rational packaging and thermal management. Outputs : Thermal storage with or without electrical stress. Periodic electrical characterization with degradation monitoring. Device decapsulation and die check. Physical analysis. Feedback simulations and improvement propositions. Applications : Electric power supplies High Efficiency DC-DC converters Inverters Power Factor Correctors (PFC) Market segment : Automotive Aerospace Military Railway Aeolian Energy production
Case 1 : ESD stress and thermal storage on 1200V SiC Schottky diodes for power conversion applications Thermal Storage on 1200V SiC Schottky diodes : impact on die brazing and packaging Conditions - 350 hours @ 240 C - I(V) characterization every 24 hours Physical Analysis Electrical Characterization Cross-section X-Rays
Case 1 : ESD stress and thermal storage on 1200V SiC Schottky diodes for power conversion applications ESD stress on 1200V SiC Schottky diodes : a robustness study Conditions - 15 kv HBM electro-static discharges - Multiple strikes Modelling Electrical Characterization Physical Analysis OBIRCH Analysis Focused Ion Beam
Case 1 : ESD stress and thermal storage on 1200V SiC Schottky diodes for power conversion applications Thermal stress : Possible coupling with vibratory stress 1m 3-75 C to +200 C 0% to 100% humidity Up to 20 C/min Thermal chamber 300 C small capacity oven 1000 C storage furnace Decapsulation means : Micromilling LASER ablation (ceramic & plastic packages) Chemical etching (plastic) Electrical characterizations : I(V) measurement up to 250V 30A Low current I(V) measurements ( pa) Physical analysis : X-Rays Radiography EMMI Photon Emission Microscopy OBIRCH Microscopy (Scanning Electron Microscopy) (Focused Ion Beam) (Transmission Electron Microscopy) (EDX Analysis) (Multiphysical simulation)
Case 2 : Pulsed-RF life tests on power AlGaN/GaN HEMTs for RADAR applications
Case 2 : Pulsed-RF life tests on power AlGaN/GaN HEMTs for RADAR applications Issue : New wide bandgap semiconductor technologies integration such as SiC and GaN in critical equipment (communication, security, defence, medical) could reduce system reliabilty. Outputs : RF amplifier design and fabrication Measurements and accelerated ageing tests on RF power devices. Electrical characterization before and after stress. Physical analysis. Lifetime estimation and ageing phenomena modeling. Improvement propositions. Applications : RADAR Mobile phones base stations Industrial heating Medical electronics Market segment : Telecommunications Aerospace Military Medical
30 mm Case 2 : Pulsed-RF life tests on power AlGaN/GaN HEMTs for RADAR applications Enhanced drain voltage pulsed-rf life test on GaN HEMTs Conditions - Several drain voltage (40V, 43V, 45V) - Maximum output power matching - Saturated operating contions Ageing tests Impedance matching & Circuit design 50 mm
Case 2 : Pulsed-RF life tests on power AlGaN/GaN HEMTs for RADAR applications Lifetime prediction Electrical characterization MTTF = 2.5 e6 hours ( 290 years) @ T CH = 200 C 450µs/15% Reliability modelling Physical analysis
Case 2 : Pulsed-RF life tests on power AlGaN/GaN HEMTs for RADAR applications Accelerated RF ageing tests : Temperature, voltage stresses Up to 1kW in pulsed mode L and S band (extensible) Physical analysis : RX Radiography EMMI Photon Emission Microscopy OBIRCH Microscopy (Scanning Electron Microscopy) (Focused Ion Beam) (Transmission Electron Microscopy) (EDX Analysis) (Multiphysical simulation) RF amplifier design and measurement: Hybrid technology Bipolar, FET Si, GaAs, SiC, GaN Up to 1kW Electrical characterizations : I(V) measurement up to 250V 30A Low current I(V) measurements ( pa) [S] dynamic measurments possibles
3 / Conclusions
Conclusions Large intervention spectrum, from device to device. A unique head office, CEVAA. High level of technical expertise with state-of-the-art facilities. Innovative test benches. Electrical means can be coupled with vibratory facilitites multiphysical life tests.
Thank you for your attention! Sales Manager Fabrice FOUQUER f.fouquer@cevaa.com / Tél. 06 74 41 56 69 Project Manager for mecatronic reliability Jean-Baptiste FONDER jb.fonder@cevaa.com / Tél. 02 32 91 73 50 Technopôle du Madrillet / 2, rue Joseph Fourier / 76800 St. Etienne du Rouvray / Tél. 02 32 91 73 50 / Fax 02 32 91 73 59