SO8 Rev. 4 17 March 211 Product data sheet 1. Product profile 1.1 General description Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low on-state resistance Suitable for high frequency applications due to fast switching characteristics 1.3 Applications Motor and actuator drivers Power management Synchronized rectification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j 25 C; T j 15 C - - -3 V I D drain current T sp 8 C - - -2.3 A P tot total power dissipation T sp =8 C [1] - - 2 W Static characteristics R DSon drain-source on-state resistance Dynamic characteristics V GS =-1V; I D =-1A; T j =25 C Q GD gate-drain charge V GS =-1V; I D =-2.3A; V DS =-15V; T j =25 C -.22.25 Ω - 3 - nc [1] Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time.
2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S1 source1 2 G1 gate1 8 5 D1 D1 D2 D2 3 S2 source2 4 G2 gate2 5 D2 drain2 6 D2 drain2 7 D1 drain1 8 D1 drain1 1 4 SOT96-1 (SO8) S1 G1 S2 G2 sym115 3. Ordering information Table 3. Ordering information Type number Package Name Description Version SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 4 17 March 211 2 of 12
4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 6134). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage T j 25 C; T j 15 C - -3 V V GS gate-source voltage - - V V GSO gate-source voltage open drain -2 2 V I D drain current T sp 8 C - -2.3 A I DM peak drain current T sp = 25 C; pulsed [1] - -1 A P tot total power dissipation T amb =25 C [2] - 1 W T sp =8 C [3] - 2 W T amb =25 C [4] - 1.3 W [5] - 2 W T stg storage temperature -65 15 C T j junction temperature - 15 C Source-drain diode I S source current T sp 8 C - -1.25 A I SM peak source current T sp = 25 C; pulsed [1] - -5 A [1] Pulse width and duty cycle limited by maximum junction temperature. [2] Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with a thermal resistance from ambient to tie-point of 9 K/W. [3] Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time. [4] Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with a thermal resistance from ambient to tie-point of 9 K/W. [5] Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with a thermal resistance from ambient to tie-point of 27.5 K/W. All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 4 17 March 211 3 of 12
2.5 mlb836 1 2 mbe155 P tot (W) 2. 1.5 I D (A) 1 (1) t p = 1 μs 1 1 ms 1..5 1 1 P t p δ = T DC.1 s 5 1 15 2 T s ( C) t p t T 1 2 1 1 1 1 V DS (V) 1 2 δ =.1 T s = 8 C. (1) R DSon limitation. Fig 1. Power derating curve Fig 2. SOAR; P-channel 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-sp) thermal resistance from junction to see Figure 3 - - 35 K/W solder point 1 2 mbe153 R th j-s (K/W) 1 δ =.75.5.33.2.1.5 1.2.1 P t p δ = T t p t T 1 1 1 6 1 5 1 4 1 3 1 2 1 1 1 t p (s) Fig 3. Transient thermal resistance from junction to soldering point as a function of pulse time; typical values. All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 4 17 March 211 4 of 12
6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source breakdown I D = -1 µa; V GS =V; T j = 25 C -3 - - V voltage V GS(th) gate-source threshold I D =-1mA; V DS =V GS ; T j =25 C -1 - -2.8 V voltage I DSS drain leakage current V DS =-24V; V GS =V; T j = 25 C - - -1 na I GSS gate leakage current V GS =2V; V DS =V; T j = 25 C - - 1 na V GS =-2V; V DS =V; T j = 25 C - - 1 na R DSon drain-source on-state V GS =-1V; I D =-1A; T j = 25 C -.22.25 Ω resistance V GS =-4.5V; I D =-.5A; T j = 25 C -.33.4 Ω I DSon on-state drain current V DS =-1V; V GS = -1 V -2.3 - - A V DS =-5V; V GS = -4.5 V -1 - - A Dynamic characteristics Q G(tot) total gate charge I D =-2.3A; V DS =-15V; V GS =-1V; - 1 25 nc Q GS gate-source charge T j =25 C - 1 - nc Q GD gate-drain charge - 3 - nc C iss input capacitance V DS =-2V; V GS = V; f = 1 MHz; - 25 - pf C oss output capacitance T j =25 C - 14 - pf C rss reverse transfer - 5 - pf capacitance g fs transfer conductance V DS =-2V; I D =-1A; T j = 25 C 1 2 - S t off turn-off time V DS =-2V; V GS =-1V; R G(ext) =4.7Ω; - 5 14 ns t on turn-on time R L =2Ω; T j =25 C; I D =-1A - 2 8 ns Source-drain diode V SD source-drain voltage I S = -1.25 A; V GS =V; T j = 25 C - - -1.6 V t rr reverse recovery time I S = -1.25 A; di S /dt = 1 A/µs; V GS =V; V DS =25V; T j =25 C - 15 2 ns All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 4 17 March 211 5 of 12
6 C (pf) mbe144 1 I D (A) 8 V GS = 1 V mbe154 7.5 V 6 V 4 6 5 V 2 C iss C oss C rss 1 2 3 V DS (V) 4.5 V 4 4 V 2 3.5 V 3 V 2.5 V 2 4 6 8 1 12 V DS (V) Fig 4. Capacitance as a function of drain-source voltage; P-channel; typical values Fig 5. Output characteristics: drain current as a function of drain-source voltage; P-channel; typical values 1 mbe157 1 mbe145 I D (A) 8 V GS (V) 8 6 6 4 4 2 2 2 4 6 8 V GS (V) 2 4 6 8 1 Q g (nc) Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; P-channel; typical values Fig 7. Gate-source voltage as a function of gate charge; P-channel; typical values All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 4 17 March 211 6 of 12
1 4 mda165 1.2 mbe138 k R DSon (mω) (1)(2)(3)(4) (5) 1.1 1. 1 3.9.8.7 1 2 2 4 6 8 1 V GS (V).6 5 5 1 15 T j ( C) -V DS -I D x R DSon ; T j = 25 C. (1) I D = -.1 A. (2) I D = -.5 A. (3) I D = -1 A. (4) I D = -2.3 A. (5) I D = -4.5 A. Typical V GSth at I D = 1 ma; V DS = V GS = V GSth. Fig 8. Drain-source on-state resistance as a function of drain current; typical values Fig 9. Temperature coefficient of gate-source threshold voltage 1.8 mbe146 6 mbe156 k 1.6 (1) I S (A) 1.4 (2) 4 1.2 (1) (2) (3) 1. 2.8.6 5 5 1 15 T j ( C).5 1 1.5 2 V SD (V) Typical R DSon at: (1) I D = -1 A; V GS = -1 V. (2) I D = -.5 A; V GS = -4.5 V. Fig 1. Temperature coefficient of drain-source on-state resistance; P-channel Fig 11. Source current as a function of source-drain voltage All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 4 17 March 211 7 of 12
7. Package outline SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y H E v M A Z 8 5 Q A 2 A 1 (A ) 3 A pin 1 index θ L p 1 4 L e b p w M detail X 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 A 1 A 2 A 3 b p c D (1) E (2) e H (1) E L L p Q v w y Z.25.1.69.1.4 1.45 1.25.57.49.25.1.49.36.19.14.25.19.1.75 Notes 1. Plastic or metal protrusions of.15 mm (.6 inch) maximum per side are not included. 2. Plastic or metal protrusions of.25 mm (.1 inch) maximum per side are not included. 5. 4.8.2.19 4. 3.8.16.15 1.27.5 6.2 5.8.244.228 1.5 1..4.7.6.25.25.1.39.28.41.1.1.4.16.24 θ.7.3 o 8 o.28.12 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT96-1 76E3 MS-12 99-12-27 3-2-18 Fig 12. Package outline SOT96-1 (SO8) All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 4 17 March 211 8 of 12
8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes v.4 211317 Product data sheet - v.3 Modifications: Various changes to content. v.3 21114 Product data sheet - v.2 All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 4 17 March 211 9 of 12
9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 4 17 March 211 1 of 12
agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors specifications such use shall be solely at customer s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors standard warranty and NXP Semiconductors product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE are trademarks of NXP B.V. HD Radio and HD Radio logo are trademarks of ibiquity Digital Corporation. 1. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. NXP B.V. 211. All rights reserved. Product data sheet Rev. 4 17 March 211 11 of 12
11. Contents 1 Product profile...........................1 1.1 General description......................1 1.2 Features and benefits.....................1 1.3 Applications............................1 1.4 Quick reference data.....................1 2 Pinning information.......................2 3 Ordering information......................2 4 Limiting values...........................3 5 Thermal characteristics...................4 6 Characteristics...........................5 7 Package outline..........................8 8 Revision history..........................9 9 Legal information........................1 9.1 Data sheet status.......................1 9.2 Definitions.............................1 9.3 Disclaimers............................1 9.4 Trademarks............................ 11 1 Contact information...................... 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V. 211. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 17 March 211 Document identifier: