High Density Ceramic TCO Sputtering Targets Indium Tin Oxide (ITO) for deposition of transparent conductive oxide layers
High Density Ceramic TCO Sputtering Targets: Indium Tin Oxide (ITO) Rotary ceramic sintered ITO targets for display applications ITO for CF plane in TFT-LCD (Gen 8.5) ITO for touch screens ITO-coated film for projected capacitive touch sensors R ITO SiO2 nucleation layer (optional) Planarizing layer (organic) ITO layer ITO Low index thin film (SiO 2) High index thin film Nucleation/barrier layer: SiO x organic HC (n = 1.48) R etch Substrate BM layer CF layer PET-substrate (n = 1.65) R ITO = R etch invisible ITO ITO for CF plane in TFT-LCD, ex. 15 nm Target dimension (8X) [mm] Case 1: Planar 23 (W) X 27 (L) Case 2: Rotary, conservative Case 3: Rotary, optimized 151 (OD) X 27 (L) 155 (OD) X 27 (L) Target thickness [mm] 9 8 1 Target Utilization [%] 34 * 8 87.5 Collection efficiency [%] 55 61.6 63.25 Max. Target power [kw/m] 7 1 1 DDR [nm.m/min] 62.5 1 12.7 Product yield [%] 95 98 98 Time between coater cleaning intervals [hrs] 6 175 179.7 Duration maintenance interval @ 4 operators, 12 1 1 incl. venting and evacuation [hrs] Mounting new target set @ 4 operators [hrs] 6 4 4 ITO wt available per target [kgs] 39.74 68.99 87.45 Yielded production with set of 8 targets 9544 4547 64121 [# Gen 8.5 substrates] * TU (wt basis): 4% 15% relative loss due to nodule removal 3 25-31.9 % - 4.4 % ITO for flexible projected capacitive touch sensor product (21 nm) Case 1: planar, single drum - 6 bays Case 2: rotary, single drum - 6 bays Case 3: rotary, double drum; 2 x 5 bays Case 4: rotary, double drum; 2 x 5 bays and cast Si Target dimensions [mm], wall thickness 9 15 (L) X 15 [W] 16 [L], 135 [ID] 16 [L], 135 [ID] 16 [L], 135 [ID] Target Utilization [%] 25.5* 85 85 85 Collection efficiency [%] 5 57.5 57.5 57.5 Power on Target [kw/m] 4.29 3.73 7.47 1.27 Change time target (with 2 operators), 1.5.5.5 [hrs] ITO wt available per target [kg] 14.38 46.25 46.25 46.25 Total standtime including maintenance 125.19 1644.24 111.3 838.58 and set up [hrs] Relative ITO target cost 1. 1.9 1.9 1.9 Substrate speed [m/min] 1.6 1.6 3.2 4.4 Substrate yield [%] 95 98 98 98 Dynamic Deposition Rate [nm.m/min] 33.6 33.6 67.23 92.43 Yielded production with 1 target 5.7 79.38 79.38 79.38 [# coated rolls] Investment cost web coater 6.25 6.25 1 1 (5 or 1 magnetrons) [M$] Cases 1-3: assume sprayed rotary silicon is used for SiO 2 deposition. Case 4: bonded, cast rotary Si is used for SiO 2 deposition. * includes 15 % extra relative loss due to nodule removal 4-18.1 % - 22.7 % - 33.8 % 2 3.826 Cost ($/unit) 15 Cost (c$/m²) Labour cost Energy 2 cost.398.363.371.363.247.363.213 1 5 1 2.162 2.39 2.6 1.664 Yielded production for 1 $ spent in sputtering targets 8 7 6 5 4 3 2 1 Case 1: planar Case 2: rotary, cons. Case 3: rotary, opt. + 34.8 % + 57.4 % Case 1: planar Case 2: rotary, cons. Case 3: rotary, optim. Yielded production with 1 target [km 2 ] 2 16 12 8 4 Case 1: planar, single drum - 6 bays Case 2: rotary, single drum - Materials 6 bays cost Case 3: rotary, Materials double cost Case 4: rotary, Labor double cost drum; drum; 2 Labor x 5 bays cost 2 x 5 bays Energy and cast cost Si Case 1 Case 2 Case 3 Case 4 1.6 1.2.8.4. Yearly production [Mm 2 ] Yielded production with 1 target Yearly production
High Density Ceramic TCO Sputtering Targets: Indium Tin Oxide (ITO) Electro-optical properties of ITO thin films on glass obtained under various sputter conditions with UMICORE rotary ceramic ITO (9/1) targets 16 18 1 Hall resistivity [ ohm.cm] 14 12 1 8 6 4 16 14 12 1 8 6 4 2 A VIS, 45-75 nm [%] T, R or A [%] 8 6 4 2 2.5 1 1.5 2 2.5 3 3.5 4 O 2 flow [% of total flow] Resistivity, RT Resistivity, Tsub = 18 C AVIS, RT 4 45 5 55 6 65 7 75 8 Wavelength [nm] 23 C, T 23 C, R 23 C, A RT, T RT, R RT, A ITO-9/1 thin film properties vs. reactive gas flow. All depositions with rotary magnetron at 1 kw/m and 2.8E-3 mbar on optically clear glass substrate (Schott B27, 1 mm). Coating thicknesses: 145 nm for RT; 113 nm for Tsub = 18 C. Absorption data include the glass substrate. Minimum RT resistivity depends strongly on residual water partial pressure in the coater. Transmission, reflection and absorption curves as measured with a spectrophotometer for 145 nm (RT) resp. 13 nm (23 C) coatings on glass (Schott B27, 1 mm, glass is included in the measurements). Coatings were obtained with a rotary cathode at 1 kw/m and at 2.8E-3 mbar with 2% O 2 in the gas flow. 5 3. 9 45 Resistivity [ ohm.cm] 4 3 2 1 2. 1. A VIS, 45-75 nm [%] Carrier conc., Hall [X1.E+2 cm -3 ] 8 7 6 5 4 35 3 25 Hall mobility [cm 2 /(V.s)]. 18 25 23 255 28 35 33 Substrate temperature [ C] 4 2 18 23 28 33 Substrate temperature [ C] Hall resistivity AVIS Carrier conc. Mobility Electro-optical properties of 115 nm ITO (9/1) coatings against glass substrate temperature during deposition. All coatings were deposited with a single rotary magnetron at 1 kw/m, and 2.8E-3 mbar total pressure (2. % of O 2 in the gas flow). All coatings obtained via dynamic depositions: two passes at 1.54 m/min. Typical dynamic deposition rates (DDR) vary between appr. 86 nm.m/min and 14 nm.m/min. The absorption data include the glass substrate and have been obtained with a Spectrophotometer.
High Density Ceramic TCO Sputtering Targets: Indium Tin Oxide (ITO) Specifications Physical Data High density grade 99.5 % of TD TD (theoretical density) 7.14 g/cm 3 Flexural strength > 15 MPa Electrical resistivity at 2 C <.2 mωcm Thermal conductivity at 2 C 11 12 W/mK at 25 C 1 11 W/mK Appearance black All physical data are based on ITO with a 9/1 wt% ratio. Further physical data available upon request. Chemical Composition In 2 O 3 /SnO 2 in a 9/1 wt% ratio (consistent within ±.5 wt%). Other ratios such as 8/2 wt%, 95/5 wt%, 97/3 wt% are available on request. Purity The total of all impurities listed below does not exceed 1 ppm. Impurities Al K Sb Bi Na Ti Cr Ni Zn Cu Mg Fe Pb Microstructural properties Application ITO sputtering targets allow deposition of high quality transparent conductive thin films and are manufactured from selected raw materials with high chemical purity resulting in ceramic tiles/ segments with ultra high physical density. Raw materials and final target products have been analyzed by several qualified labs. A variety of compositions and dimensions is available upon request. ITO thin films can be used in a wide range of applications including different types of displays such as TFT-LCDs, OLEDs, PDPs and Touch panels. ITO is also the TCO of choice for various thin film photovoltaic products. Dimensions Planar targets Length/tile 53 mm (2.87 ) Width/tile 375 mm (14.76 ) Thickness large tiles 1 mm (.39 ) 15 x 25 mm (5.91 x 9.84 ) smaller tiles 13 mm (.51 ) Segment gap.38 mm ±.13 mm (.15" ±.5") Tolerances for length, width, thickness ±.1 mm (±.4 ) Larger tiles with specific dimensions can be produced upon customer s request and targets for basically all planar magnetrons can be assembled from multiple tiles. Dimensions Rotary targets Multi-segment assemblies bonded to a Ti backing tube Inner diameter 1 16 mm (3.94 6.3 ) Wall thickness 12 mm (.47 ) Standards 6, 9 and 1 mm (.25,.355 and.39 ) Maximum length 4 mm (157.48 ) ITO-segment length < 2 mm (7.87 ) Segment gap.38 mm ±.13 mm (.15" ±.5") ITO rotary targets are manufactured by bonding ceramic ITO-segments to a Ti backing tube using the most advanced technologies. Backing tubes for ITO targets are provided either by Umicore TFP or by the customer and can be re-used. 1 µm SEM Image of a fractured ITO target surface showing a completely densified structure without voids and large porosities as required for high density and low stress targets.
This is to certify that the Quality Management System of: applicable to: Design and manufacture of indium tin oxide and other indium based products has been assessed and approved by National Quality Assurance, U.S.A., against the provisions of: For and on behalf of NQA, USA, Acton, MA 172 Certificate Number: 12868 EAC Code: 17 First Issued: May 2, 23 Valid Until: April 5, 215 Reissued: 5, 212 Page 1 of 1 This approval is subject to the company maintaining its system to the required standard, which will be monitored by NQA, USA, an accredited organization under the ANSI-ASQ National Accreditation Board. SWISS C E R TIFI C A TI O N SCESm 1 X. Edelmann, President SQS Swiss Made R. Glauser, Managing Director SQS High Density Ceramic TCO Sputtering Targets: Indium Tin Oxide (ITO), a business unit of the Umicore Group, is one of the leading producers of coating materials for physical vapor deposition with more than 5 years of experience in this field. Productions Sites operates production sites in Balzers (Liechtenstein), Providence, RI (USA), Beijing (P.R. of China), Manaus (Brazil) and Pforzheim (Germany). Our worldwide net - work of local sales offices and customer service centers are located close to our customers, thus ensuring best possible customer proximity. Bondshops Balzers (Liechtenstein) Providence, RI (USA) Hsinchu (Taiwan) Bonding Umicore s production capabilities include bond shop facilities in Balzers (Liechtenstein), Providence, RI (USA) and Hsinchu (Taiwan). Umicore Thin Film Products uses its own proprietary bon ding method, based on a flux-free solder technique. Thin film adhesion and diffusion barrier layers are applied to the back of each segement, followed by a tem - pe rature controlled metallic solder seal between target and backing plate/tube. The bonding is compliant to accommodate mechanical and thermal stress and bonding integrity is verified by ultrasonic scanning. Recycling offers recycling programs as an added service. Umicore is your preferred partner for a closed recycling loop. Umicore Precious Metals Refining Minor Metal production Recycling services Packaging Special packaging is available based on customer requirements. To reduce environmental impact, custom re-usable shipping containers for sputtering targets can be made upon request. Indium metal produced by Umicore Quality Assurance The Balzers location is certified according to ISO 91, ISO 141 and OHSAS 181 standards. All other production sites are also ISO 91 and ISO 141 certified. Documentation, process specifications, traceability, sophisticated analytical methods, and continuously trained employees guarantee the highest and most consistent product reliability. 5 Sims Avenue Providence, RI 299 ISO 91: 28 K April f Certificate SQS herewith certifies that the company named below has a management system which meets the requirements of the standards specified below. AG 9496 Balzers Liechtenstein Certified area Whole Company Field of activity Thin Film Products by Standards ISO 91:28 Quality Management System ISO 141:24 Environmental Management System OHSAS Occupational Health and 181:27 Safety Management System Certified Management Systems Switzerland Swiss Association for Quality and Management Systems SQS Bernstrasse 13, CH-352 Zollikofen Issue date: March 21, 212 This SQS Certificate is valid up to and including March 2, 215 Scope number 19 Registration number 12964 Metal refineries by-products, production & end of life scraps PVD material manufacturing & bonding Recycling services Spent targets & chamber scraps CIGS scraps Display, PV & Glass coating industry
BV868857/3/213/1 Please find your local sales partner at: Manufacturing sites of AG Alte Landstrasse 8 P.O. Box 364 LI-9496 Balzers Tel +423 388 73 Fax +423 388 74 5 sales.materials@umicore.com Taiwan Co., Ltd. No. 22, Aly. 4, Ln. 711, Bo ai St., Zhubei City, Hsinchu County 32 Taiwan (R.O.C.) Tel +886 3553 2999 Fax +886 3553 2525 sales.materials.hc@umicore.com 5 Sims Ave Providence, RI 299 USA Tel +1 41 456 8 Fax +1 41 421 2419 sales.materials.pr@umicore.com Product Product improvements improvements might lead might to lead specification to specification changes changes without without notice. notice.