LM108 LM208 LM308 Operational Amplifiers



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Transcription:

LM108 LM208 LM308 Operational Amplifiers General Description The LM108 series are precision operational amplifiers having specifications a factor of ten better than FET amplifiers over a b55 C toa125 C temperature range The devices operate with supply voltages from g2v to g20v and have sufficient supply rejection to use unregulated supplies Although the circuit is interchangeable with and uses the same compensation as the LM101A an alternate compensation scheme can be used to make it particularly insensitive to power supply noise and to make supply bypass capacitors unnecessary The low current error of the LM108 series makes possible many designs that are not practical with conventional amplifiers In fact it operates from 10 MX source resistances Compensation Circuits Standard Compensation Circuit December 1994 introducing less error than devices like the 709 with 10 kx sources Integrators with drifts less than 500 mv sec and analog time delays in excess of one hour can be made using capacitors no larger than 1 mf The LM108 is guaranteed from b55 C to a125 C the LM208 from b25 C toa85 C and the LM308 from 0 C to a70 C Features Y Y Y Y Maximum input bias current of 3 0 na over temperature Offset current less than 400 pa over temperature Supply current of only 300 ma even in saturation Guaranteed drift characteristics Alternate Frequency Compensation LM108 LM208 LM308 Operational Amplifiers C f t R1 C O R1 a R2 C O e 30 pf Bandwidth and slew rate are proportional to 1 C f TL H 7758 1 Improves rejection of power supply noise by a factor of ten Bandwidth and slew rate are proportional to 1 C s TL H 7758 2 Feedforward Compensation TL H 7758 3 C1995 National Semiconductor Corporation TL H 7758 RRD-B30M115 Printed in U S A

Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications (Note 5) LM108 LM208 LM308 Supply Voltage g20v g18v Power Dissipation (Note 1) 500 mw 500 mw Differential Input Current (Note 2) g10 ma g10 ma Input Voltage (Note 3) g15v g15v Output Short-Circuit Duration Continuous Continuous Operating Temperature Range (LM108) b55 Ctoa125 C 0 Ctoa70 C (LM208) b25 Ctoa85 C Storage Temperature Range b65 Ctoa150 C b65 Ctoa150 C Lead Temperature (Soldering 10 sec) DIP 260 C 260 C H Package Lead Temp (Soldering 10 seconds) 300 C 300 C Soldering Information Dual-In-Line Package Soldering (10 seconds) 260 C Small Outline Package Vapor Phase (60 seconds) 215 C Infrared (15 seconds) 220 C See AN-450 Surface Mounting Methods and Their Effect on Product Reliability for other methods of soldering surface mount devices ESD Tolerance (Note 6) 2000V Electrical Characteristics (Note 4) Parameter Condition LM108 LM208 LM308 Min Typ Max Min Typ Max Input Offset Voltage T A e 25 C 0 7 2 0 2 0 7 5 mv Input Offset Current T A e 25 C 0 05 0 2 0 2 1 na Input Bias Current T A e 25 C 0 8 2 0 1 5 7 na Input Resistance T A e 25 C 30 70 10 40 MX Supply Current T A e 25 C 0 3 0 6 0 3 0 8 ma Large Signal Voltage Gain T A e 25 C V S e g15v V OUT e g10v R L t 10 kx Units 50 300 25 300 V mv Input Offset Voltage 3 0 10 mv Average Temperature Coefficient of Input 3 0 15 6 0 30 mv C Offset Voltage Input Offset Current 0 4 1 5 na Average Temperature Coefficient of Input 0 5 2 5 2 0 10 pa C Offset Current Input Bias Current 3 0 10 na Supply Current T A ea125 C 0 15 0 4 ma Large Signal Voltage V S e g15v V OUT e g10v Gain R L t 10 kx 25 15 V mv Output Voltage Swing V S e g15v R L e 10 kx g13 g14 g13 g14 V 2

Electrical Characteristics (Note 4) (Continued) Parameter Condition LM108 LM208 LM308 Min Typ Max Min Typ Max Input Voltage Range V S e g15v g13 5 g14 V Common Mode Rejection Ratio Supply Voltage Rejection Ratio Units 85 100 80 100 db 80 96 80 96 db Note 1 The maximum junction temperature of the LM108 is 150 C for the LM208 100 C and for the LM308 85 C For operating at elevated temperatures devices in the H08 package must be derated based on a thermal resistance of 160 C W junction to ambient or 20 C W junction to case The thermal resistance of the dual-in-line package is 100 C W junction to ambient Note 2 The inputs are shunted with back-to-back diodes for overvoltage protection Therefore excessive current will flow if a differential input voltage in excess of 1V is applied between the inputs unless some limiting resistance is used Note 3 For supply voltages less than g15v the absolute maximum input voltage is equal to the supply voltage Note 4 These specifications apply for g5v s V S s g20v and b55 C s T A s a125 C unless otherwise specified With the LM208 however all temperature specifications are limited to b25 C s T A s 85 C and for the LM308 they are limited to 0 C s T A s 70 C Note 5 Refer to RETS108X for LM108 military specifications and RETs 108AX for LM108A military specifications Note 6 Human body model 1 5 kx in series with 100 pf Schematic Diagram TL H 7758 8 3

Typical Performance Characteristics LM108 LM208 Input Currents Offset Error Drift Error Closed Loop Input Noise Voltage Power Supply Rejection Output Impedance Voltage Gain Output Swing Supply Current Open Loop Frequency Response Large Signal Frequency Response Voltage Follower Pulse Response TL H 7758 6 4

Typical Performance Characteristics LM308 Input Currents Offset Error Drift Error Closed Loop Input Noise Voltage Power Supply Rejection Output Impedance Voltage Gain Output Swing Supply Current Open Loop Frequency Response Large Signal Frequency Response Voltage Follower Pulse Response TL H 7758 7 5

Typical Applications Sample and Hold Teflon polyethylene or polycarbonate dielectric capacitor Worst case drift less than 2 5 mv sec TL H 7758 4 High Speed Amplifier with Low Drift and Low Input Current TL H 7758 5 6

Typical Applications (Continued) Fast Summing Amplifier In addition to increasing speed the LM101A raises high and low frequency gain increases output drive capability and eliminates thermal feedback Power Bandwidth 250 KHz Small Signal Bandwidth 3 5 MHz Slew Rate 10V ms C5 e 6 c 10b8 R f TL H 7758 12 Connection Diagrams Metal Can Package Dual-In-Line Package TL H 7758 13 Package is connected to Pin 4 (V b ) Unused pin (no internal connection) to allow for input anti-leakage guard ring on printed circuit board layout Order Number LM108H LM108H 883 LM308AH or LM308H See NS Package Number H08C TL H 7758 15 Top View Order Number LM108J-8 883 LM308M or LM308N See NS Package Number J08A M08A or N08E Order Number LM108W 883 See NS Package Number W10A TL H 7758 17 Top View Order Number LM108J 883 See NS Package Number J14A TL H 7758 16 Also available per JM38510 10104 7

Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number LM108J 883 NS Package Number J08A Ceramic Dual-In-Line Package (J) Order Number LM108 883 NS Package Number J14A 8

Physical Dimensions inches (millimeters) (Continued) Metal Can Package (H) Order Number LM108H LM108H 883 or LM308H NS Package Number H08C S O Package (M) Order Number LM308M NS Package Number M08A 9

LM108 LM208 LM308 Operational Amplifiers Physical Dimensions inches (millimeters) (Continued) Molded Dual-In-Line Package (N) Order Number LM308N NS Package Number N08E Ceramic Flatpack Package (W) Order Number LM108AW 883 or LM108W 883 NS Package Number W10A LIFE SUPPORT POLICY NATIONAL S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a) are intended for surgical implant support device or system whose failure to perform can into the body or (b) support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectiveness be reasonably expected to result in a significant injury to the user National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd Japan Ltd 1111 West Bardin Road Fax (a49) 0-180-530 85 86 13th Floor Straight Block Tel 81-043-299-2309 Arlington TX 76017 Email cnjwge tevm2 nsc com Ocean Centre 5 Canton Rd Fax 81-043-299-2408 Tel 1(800) 272-9959 Deutsch Tel (a49) 0-180-530 85 85 Tsimshatsui Kowloon Fax 1(800) 737-7018 English Tel (a49) 0-180-532 78 32 Hong Kong Fran ais Tel (a49) 0-180-532 93 58 Tel (852) 2737-1600 Italiano Tel (a49) 0-180-534 16 80 Fax (852) 2736-9960 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications