ZEP520A ZEP520A. Technical Report ZEON CORPORATION. High Resolution Positive Electron Beam Resist. Specialty Materials Division

Transcription

1 Technical Report ZEP520A ZEP520A Ver.1.01 Apl.2003 ZEONREX Electronic Chemicals High Resolution Positive Electron Beam Resist ZEP520A ZEON CORPORATION Specialty Materials Division HeadquartersR&D Center Furukawa Sogo Bldg., Marunouchi, Yako, Kawakaki-ku Kawasaki-shi Chiyoda-ku, Tokyo , JAPAN Kanagawa-ken , JAPAN Phone : Phone : Fax : Fax : zeon. co. jp/

2 CONTENTS 1. Characteristics 2. Properties 3. Thinner 4. Developer 5. Rinse 6. Remover 7. Spin Curve 8. Dependence on Prebake Temperature 9. Dependence on Developer 10. Examples of Application 11. Dry Etching Resistance 12. Example of Process Conditions 13. Handling Precaution 14. Appendix Any process conditions and data are examples. Those will not guarantee the same data in customers process

3 1. Characteristics ZEP520A is high performance positive EB resists which show high resolution, high sensitivity and dry etch resistance. They are suitable for various EB processes. (1) Resolution Shows high resolution and rectangle pattern profile. (2) Resistance to dry etching Shows high dry etch resistance and they are almost equivalent to that of positive photoresists generally used. (3) Sensitivity Shows high sensitivity. 2. Properties Item ZEP520A ZEP520A-7 Mw 57,000 Viscosity (mpas) 11 7 Solvent Anisol Form 1QT bottle or 100ml bottle 3. Thinner Item Composition Remarks Form ZEP-A Anisol ZEP520A 1QT bottle 4. Developer Item Composition Remarks Form ZEP-RD Xylene(o-,m-,p- mixed) standard ZED-N50 n-amyl acetate high resolution 1GL bottle ZEP-SD 2-Butanone 40% Methyl isobutyl ketone 60% high sensitivity 5. Rinse ZEDN50isrecommended Item Composition Remarks Form ZMD-B Methyl isobutyl ketone 89% Isopropyl alcohol 11% 1GL bottle 6. Remover Item Composition Remarks Form ZDMAC Dimethylacetamide 1GL bottle - 2 -

4 7. Spin Curve - 3 -

5 8. Dependence on Prebake Temperature - 4 -

6 9. Dependence on Development Temperature - 5 -

7 9. Dependence on Development Time - 6 -

8 10. Examples of application 0.15m Isolated space Process Conditions Resist : ZEP520 Film thickness : 5000 PB temp. : 180 PB time : 2min. Exposure : 30kV, A, 1 line exp C/cm Dev. temp. : ZED-WN, 23, 30sec. Rinse : IPA, 23, 20sec. 0.1m Isolated line Process Conditions Resist : ZEP520 Film thickness : 5000 PB temp. : 180 PB time : 2min. Exposure area : 100m( dot) Exposure : 30kV, A, 1 line exp. 0.7sec./dot Dev. temp. : ZED-WN, 23, 60sec. Rinse : IPA, 23, 20sec. 0.05m Isolated space Process Conditions Resist : ZEP520 Film thickness : Exposure : 75kV These data were presented by ELIONIX INC

9 11. Dry Etching Resistance (1) CF 4 Dry Etching Rate CF 4 Dry Etching Condition 0.15torr, 70sqcm, 200W ZEP series Co mpetitor E No vo lak Resist O (2) Cl 2 +O 2 Dry Etching Rate Cl 2 +O 2 Dry Etching Condition Cl 2 /O 2 =4/1, 5min. ZEP520 No vo lak Resist - 8 -

10 12. Example of Process Conditions (1) Coating (2) Prebake (3) Exposure (4) Development (5) Rinse (6) Post bake (7) De-scum (8) Etching ZEP520A 2000rpm60sec 5000 ZEP520A rpm60sec min. (Oven) min. (Hot Plate) 2050C/cm2 at 20kV sec. (Dipping) ZEP-RD, ZED-N sec. (Dipping) ZMD-B in case of wet etching min. (Oven) min. (Hot Plate) O 2 -plasma ifneedbe Dry process and wet process can be used. Wet Etching solution for Cr Ammonium cerium() nitrate (NH 4 ) 2 Ce(NO 3 ) wt% Perchloric acid HClO 4 38wt% Pure water H 2 O 7784wt% (9) Resist removing <organic solvent > Dimethylacetamide(DMAC)3035) N-methyl-2-pyroridone(NMP) (3035) < deep-uv + organic solvent > 1 st step: 185nm+254nm,10mW/cm 2,3min.-irradiation 2 nd step: Dimethylacetamide(DMAC) or N-methyl-2-pyroridone (NMP), 231min. *As the polymer of ZEP520A is decomposed by deep-uv irradiation, it can be easily removed

11 13. Handling Precaution (1) Flammable Liquid. (2) Harmful by inhalation. (3) Avoid contact with skin and eyes. CAUTION: Open carefully. Use in well ventilated area. In case of contact with skin and eyes, rinse immediately with plenty of water for 15 minutes and get medical attention. In case of fire use Alcohol form CO 2 or dry chemical, never use water. STORAGE: Keep capped and away from oxidants, sparks and open flame. Store at cool[32f(0c)77f(25c)] and dark place. Use in clean room

12 14. Appendix (1) Refractive index of ZEP520A film Cauchy coefficient n = n 0 + n 1 / 2 + n 2 / 4 n 0 = n 1 = n 2 = absorption coefficient = 0 unit of : measured by UV-1250/SEKLA Tencor (2) Glass transition temperature of ZEP520A polymer Tg : 105 measured by DSC < SalesDivision> TOKYOZAIRYOCO.,LTD. (ZEON Group) ELECTRONICCHEMICALSGroup ,Hamamatsucho,Minato-ku,Tokyo, ,JAPAN (TEL ) (FAX)