PRELIMINARY DATA SHEET Linear Hall Effect Sensor IC Edition Jan., 997 65-6-PD
PRELIMINARY DATA SHEET Linear Hall Effect Sensor IC in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. Features: The linear CMOS Hall Sensor is used for precise measurements of the magnetic flux. The differential output voltage is proportional to the magnetic flux density at a right angle to the sensitive area. Due to chopper compensation, low magnetic offset and offset drift is achieved. It can be used as a current sensor or can detect any mechanical movement. Very accurate angle measurements or distance measurements can be done. The sensor is very robust and can be used in an electrically and mechanically hostile environment. low magnetic offset extremely sensitive Specifications Marking Code Type Temperature Range A E C S A E C Operating Junction Temperature Range A: T J = C to +7 C E: T J = C to + C C: T J = C to + C Designation of Hall Sensors.8 to Volt operation wide temperature range = to +5 C over-voltage protection HALXXXPP-T Temperature Range: A, E, or C Package: S for SOT-89A differential output accurate absolute measurements of DC and low frequency magnetic flux densities on-chip temperature compensation low /f-noise Example: S-E Type: Type: Package: SOT-89A Temperature Range: T J = C to + C Solderability Package SOT-89A: according to IEC68--58 OUT OUT GND Fig. : Pin configuration ITT Semiconductors
PRELIMINARY DATA SHEET Functional Description GND External filtering or integrating measurement can be done to eliminate the AC component of the signal. So the influence of mechanical stress and temperature cycling is suppressed. No adjustment of magnetic offset is needed. Oscillator The sensitivity is stabilized over a wide range of temperature and supply voltage due to internal voltage regulation and circuits for temperature compensation. Temp. Dependant Bias Offset Compensation; Hallplate Switching Matrix Offset Compensation (see Fig. ) Protection Device The Hall Offset Voltage is the residual voltage measured in absence of a magnetic field (zero-field residual voltage). This voltage is caused by mechanical stress and can be modeled by a displacement of the connections for voltage measurement and/or current supply. OUT OUT Fig. : Block diagram of the HAL (top view) The Linear Hall Sensor measures accurate constant and low frequency magnetic flux densities. The differential output voltage is proportional to the magnetic flux density passing vertically through the sensitive area of the chip. The common mode voltage (average of the voltages on pin and pin ) of the differential output amplifier is a constant. V. The differential output voltage consists of two components due to the switching offset compensation technique. The average of the differential output voltage represents the magnetic flux density. This component is overlaid by an differential AC signal at a typical frequency of 7 khz. The AC signal represents the internal offset voltages of amplifiers and hall plates, that are influenced by mechanical stress and temperature cycling. Compensation of this kind of offset is done by cyclic commutating the connections for current flow and voltage measurement. First cycle: The hall supply current flows between the points and. In the absence of a magnetic field V is the Hall Offset Voltage (+V Offs ). In case of a magnetic field, V is the sum of the Hall voltage (V H ) and V Offs. V = V H + V Offs Second cycle: The hall supply current flows between the points and. In the absence of a magnetic field V is the Hall Offset Voltage with negativ polarity ( V Offs ). In case of a magnetic field, V is the difference of the Hall voltage (V H ) and V Offs. V = V H V Offs The output shows in the first cycle the sum of the Hall voltage and the offset, in the second the difference of both. The difference of the mean values of V OUT and V OUT (V OUTDIF ) is equivalent to V Hall. V for B mt V OUT Note: The numbers do not represent pin numbers. I C V Offs V CM V OUTDIF/ V OUTDIF/ V OUTDIF V OUTAC I C V Offs /f CH = 6.7 µs V OUT V V a) Offset Voltage b) Switched Current Supply c) Output Voltage t Fig. : Hall Offset Compensation ITT Semiconductors
PRELIMINARY DATA SHEET Outline Dimensions. +.5. ±.5. +..7.5 +..5.7.95.5 +. sensitive area position of hall sensor referenced to the center of package x = ±. mm y =. ±. mm (.7 mm x.7 mm)...5 +.. top view.5. branded side max..5.5 Fig. : Plastic Package SOT-89A Weight approximately. g Dimensions in mm Absolute Maximum Ratings Symbol Parameter Pin No. Min. Max. Unit Supply Voltage 5 V I DDZ Supply Current through Protection Device ) ) ma I OUT Output Current, 5 5 ma I OUTZ Output Current through Protection Device ) ) ma T S Storage Temperature Range 65 5 C T J Junction Temperature Range 5 C 7 ) C ) t ms ) t h Stresses beyond those listed in the Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions/Characteristics of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. ITT Semiconductors
PRELIMINARY DATA SHEET Recommended Operating Conditions Symbol Parameter Pin No. Min. Max. Unit Remarks I OUT Continuous Output Current,.5.5 ma T J = 5 C I OUT Continuous Output Current, ma T J = 7 C C L Load Capacitance, nf power dissipation limit V 8. V 6.8 V.8 V.5 V ÈÈÈÈÈÈÈÈÈÈ ÈÈÈÈÈÈÈÈÈÈÈ ÈÈÈÈÈÈÈÈÈÈÈ ÈÈÈÈÈÈÈÈÈÈÈ ÈÈÈÈÈÈÈ ÈÈÈ min. for specified sensitivity C 5 C 5 C 5 C Fig. 5: Recommended Operating Supply Voltage Extended Operational Range Within the extended operating range, the ICs operate as mentioned in the functional description. The functionality has been tested on samples, whereby the characteristics may lie outside the specified limits. Symbol Parameter Pin No. Min. Max. Unit Remarks Supply Voltage. V I OUT Output Current, ma T J = C to +7 C ITT Semiconductors 5
PRELIMINARY DATA SHEET Electrical and Magnetic Characteristics see Fig. 5 for and as not otherwise specified; Typical characteristics for T J = 5 C, 75 mt < B < 75 mt and = 6.8 V Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions I DD Supply Current.8.5 7. ma T J = 5 C; I OUT, = ma I DD Supply Current under Recommended Operating Conditions 9..5 8.5 ma I OUT, = ma V CM Common Mode Output Voltage,... V I OUT, = ma V CM = (V OUT + V OUT ) / CMRR Common Mode Rejection Ratio, mv/v I OUT, = ma CMRR is limited by the influence of power dissipation S B = V OUTDIF / B Differential Magnetic Sensitivity 7.5 9.5 mv/mt B = ±6 mt ; T J = 5 C V OUTDIF = V OUT V OUT S B Differential Magnetic Sensitivity under Recommended Operating Conditions.5 9.5 mv/mt B = ±6 mt V OUTDIF = V OUT V OUT B offset Magnetic Offset... mt B = mt, I OUT, = ma T J = 5 C B offset Magnetic Offset over Temperature.5..5 mt B = mt, I OUT, = ma B OFFSET / T Magnetic Offset Change due to 5 5 µt/k B = mt, I OUT, = ma BW Bandwidth ( db) khz ) NL dif NL single Non Linearity of Differential Output Non Linearity of Single Ended Output. % B = ± mt, B = ±6 mt, % f CH Chopper Frequency, 7 66 khz T J = 5 C f CH Chopper Frequency over Temp., 9 7 66 khz V OUTACpp n meff f Cflicker f Cflicker Peak-to-Peak AC Output Voltage Magnetic RMS Differential Broadband Noise Corner Frequency of /f Noise Corner Frequency of /f Noise,..8 V µt BW = Hz to khz Hz B = mt Hz B = 65 mt R OUT Output Resistance, 5 Ω I OUT,.5 ma ; T J = 5 C = 6.8 V R OUT R thjsb case Output Resistance over Temperature Thermal Resistance Junction to Substrate Backside, 5 Ω I OUT,.5 ma 5 K/W Fiberglass Substrate mm x mm x.5 mm pad size see Fig. 6 ) with external pole filter (f db = 5 khz), V OUTAC is reduced to less than mv 6 ITT Semiconductors
PRELIMINARY DATA SHEET Typical output voltages versus magnetic flux density Typical differential output offset voltage versus supply voltage V OUT V OUT V 5 = 6.8 V V.5. V OFFS. B = mt = C V OUT V OUT.. = 5 C = 5 C..... 5 5 5 5 mt B.5 6 8 V B OFFS Typical magnetic offset of differential output versus supply voltage mt.5 = C B = mt..5. = 5 C = 5 C B OFFSmax B OFFS mt.5..5. Typical magnetic offset of differential output versus ambient temperature Parameter = =.8 V = 6. V = V B = mt B OFFSmax for = 6.8V.5.5...5.5...5 B OFFSmin.5 B OFFSmin for = 6.8 V...5 6 8 V.5 5 5 5 5 75 5 5 C ITT Semiconductors 7
PRELIMINARY DATA SHEET Typical differential sensitivity versus supply voltage Typical differential sensitivity versus ambient temperature Parameter = mv/mt 5 B = ±5 mt mv/mt 5 5 B = ±5 mt S BDiff S BDiff 5 5 = C = 5 C = 5 C 5 5 =.8 V = 6. V = V 5 7 9 V 5 5 5 5 75 5 5 C Typical nonlinearity of differential output versus magnetic flux density % Parameter =.5 Typical nonlinearity of differential output versus magnetic flux density %.5 = 6.8 V NL dif. NL dif..5.5...5 =.8 V.5. = 6. V = V. = C = 5 C = 5 C.5 8 6 6 8 mt.5 8 6 6 8 mt B B 8 ITT Semiconductors
PRELIMINARY DATA SHEET Typical single endend nonlinearity versus magnetic flux density, Parameter = Typical nonlinearity of single ended output versus magnetic flux density, mt % = 6. V NL sing NL dif =.8 V = V = C = 5 C = 5 C 8 6 6 8 mt 8 6 6 8 mt B B Typical chopper frequency versus supply voltage Typical chopper frequency versus ambient temperature Parameter = khz khz 8 8 f CH 6 f CH 6 8 6 = C = 5 C = 5 C 8 6 =.8 V = 6. V = V 5 6 7 8 9 V 5 5 5 5 75 5 5 C ITT Semiconductors 9
PRELIMINARY DATA SHEET Typical common mode output voltage versus supply voltage Typical common mode output voltage versus ambient temperature Parameter = V CM V.5......9.8.7.6.5.... = C = 5 C 6 8 V V.6.5. V CM... =.8 V..9 = V.8.7.6.5. 5 5 5 5 75 5 5 C Typical output AC voltage versus supply voltage Typical output AC voltage versus ambient temperature Parameter = mv 5 mv PP 5 V OUTpp, V OUTpp V OUTpp, V OUTpp =.8 V = 6. V = V 6 8 V 5 5 5 5 75 5 5 C ITT Semiconductors
PRELIMINARY DATA SHEET Typical supply current versus supply voltage Typical supply current versus supply voltage ma 5 I OUT, = ma ma I OUT, = ma I DD 5 I DD 5 5 5 5 = C = 5 C = 5 C 5 = C = 5 C 5 5 5 5 5 V = 5 C 6 8 V Typical supply current versus temperature Typical supply current versus output current Parameter = ma B = mt ma 5 B = mt I DD 5 I DD 5 5 =.8 V = 6. V 5 =.8 V = V = V 5 5 5 5 75 5 5 C 6 6 ma I OUT, ITT Semiconductors
PRELIMINARY DATA SHEET Ω 8 Typical dynamic differential output resistance versus temperature B = mt dbt rms Hz Typical magnetic noise spectrum R OUT 6 =.8 V = 6. V = V n meff B = mt B = 65 mt 8 6 8 nt Hz 5 5 5 5 75 5 5 C 5...... k k. k. M Hz f 5. Typical magnetic frequency response. db db =.5 mv/mt s B.. Fig. 6: Recommended pad size SOT-89A Dimensions in mm k k k f B ITT Semiconductors
PRELIMINARY DATA SHEET Application Circuits The normal integrating characteristics of a voltmeter is sufficient for signal filtering. V CC Display the difference between channel and channel to show the Hall voltage. Capacitors.7 nf and pf for electromagnetic immunity are recommended. V SUP V SUP HAL OUT OUT High Low Voltage Meter.7n p 7 n HAL OUT OUT k k p. k. k 6.8 n 7 n Ch Ch Oscilloscope GND Do not connect OUT or OUT to Ground. GND Do not connect OUT or OUT to Ground. Fig. 7: Flux density measurement with voltmeter Fig. 8: Filtering of output signals V SUP V CC.7n p R+ R. C HAL OUT OUT.5 R R CMOS OPV +.75 R. R ADC p. C GND R R C Fig. 9: Differential output to single-ended output R = kω, C = 7.5 nf, R for offset adjustment, BW db =. khz Do not connect OUT or OUT to Ground. ITT Semiconductors
PRELIMINARY DATA SHEET V SUP V CC 6 V.7 n p. n HAL OUT OUT.7 k.7 k p.7 k.7 n CMOS OPV +.7 k.7 k.7 k 8. n. k n CMOS OPV + OUT GND Do not connect OUT or OUT to Ground. V EE 6 V Fig. : Differential output to single-ended output (referenced to ground), filter BW db =.7 khz ITT Semiconductors
PRELIMINARY DATA SHEET ITT Semiconductors 5
PRELIMINARY DATA SHEET Documentation History. Preliminary data sheet: HAL Linear Hall Effect Sensor IC, March 9, 99, 65-6-PD. First release of the preliminary data sheet.. Preliminary data sheet: HAL Linear Hall Effect Sensor IC, Aug., 995, 65-6-PD. Second release of the preliminary data sheet. Major changes: Marking code. Preliminary data sheet: HAL Linear Hall Effect Sensor IC, Jan., 997, 65-6-PD. Third release of the preliminary data sheet. Major changes: Electrical and Magnetic Characteristics diagram: Typical output voltages versus magnetic flux density ITT Semiconductors Group World Headquarters INTERMETALL Hans-Bunte-Strasse 9 D-798 Freiburg (Germany) P.O. Box 8 D-798 Freiburg (Germany) Tel. +9-76-57- Fax +9-76-57-7 Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (/97) Order No. 65-6-PD Reprinting is generally permitted, indicating the source. However, our consent must be obtained in all cases. Information furnished by ITT is believed to be accurate and reliable. However, no responsibility is assumed by ITT for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of ITT. The information and suggestions are given without obligation and cannot give rise to any liability; they do not indicate the availability of the components mentioned. Delivery of development samples does not imply any obligation of ITT to supply larger amounts of such units to a fixed term. To this effect, only written confirmation of orders will be binding. 6 ITT Semiconductors