Bidirectional Zener diode in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package.

Similar documents
Medium power Schottky barrier single diode

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

PMEG3005EB; PMEG3005EL

PMEG2020EH; PMEG2020EJ

PMEG3015EH; PMEG3015EJ

65 V, 100 ma PNP/PNP general-purpose transistor

45 V, 100 ma NPN/PNP general-purpose transistor

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description

40 V, 200 ma NPN switching transistor

Schottky barrier quadruple diode

BAS70 series; 1PS7xSB70 series

2PD601ARL; 2PD601ASL

10 ma LED driver in SOT457

Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package

BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1.

BZT52H series. Single Zener diodes in a SOD123F package

CAN bus ESD protection diode

DATA SHEET. PMEGXX10BEA; PMEGXX10BEV 1 A very low V F MEGA Schottky barrier rectifier DISCRETE SEMICONDUCTORS

DISCRETE SEMICONDUCTORS DATA SHEET. BZX384 series Voltage regulator diodes. Product data sheet Supersedes data of 2003 Apr 01.

BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BZX585 series Voltage regulator diodes. Product data sheet Supersedes data of 2004 Mar 26.

DISCRETE SEMICONDUCTORS DATA SHEET

BC807; BC807W; BC327

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode V F forward voltage I F =10mA

LIN-bus ESD protection diode

How To Make An Electric Static Discharge (Esd) Protection Diode

Planar PIN diode in a SOD323 very small plastic SMD package.

PRTR5V0U2F; PRTR5V0U2K

45 V, 100 ma NPN general-purpose transistors

PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1.

BC847/BC547 series. 45 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in small plastic packages.

Femtofarad bidirectional ESD protection diode

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan Sep 21.

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858

SCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.

Silicon temperature sensors. Other special selections are available on request.

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct Feb 03.

NPN wideband transistor in a SOT89 plastic package.

The sensor can be operated at any frequency between DC and 1 MHz.

MOSFET N-channel enhancement switching transistor IMPORTANT NOTICE. use

Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control

IP4220CZ6. 1. Product profile. Dual USB 2.0 integrated ESD protection. 1.1 General description. 1.2 Features and benefits. 1.

3-input EXCLUSIVE-OR gate. The 74LVC1G386 provides a 3-input EXCLUSIVE-OR function.

IP4234CZ6. 1. Product profile. Single USB 2.0 ESD protection to IEC level General description. 1.2 Features. 1.

SiGe:C Low Noise High Linearity Amplifier

HEF4011B. 1. General description. 2. Features and benefits. 3. Ordering information. 4. Functional diagram. Quad 2-input NAND gate

DISCRETE SEMICONDUCTORS DATA SHEET. dbook, halfpage M3D088. BB201 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12

1-of-4 decoder/demultiplexer

30 V, single N-channel Trench MOSFET

The 74LVC1G11 provides a single 3-input AND gate.

Quad 2-input NAND Schmitt trigger

Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package

DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.

HEF4021B. 1. General description. 2. Features and benefits. 3. Ordering information. 8-bit static shift register

50 V, 180 ma P-channel Trench MOSFET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j = 25 C V

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

3-to-8 line decoder, demultiplexer with address latches

60 V, 360 ma N-channel Trench MOSFET. Symbol Parameter Conditions Min Typ Max Unit V DS drain-source T amb = 25 C V

DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors

74HC02; 74HCT General description. 2. Features and benefits. Ordering information. Quad 2-input NOR gate

NPN wideband silicon RF transistor

DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

DISCRETE SEMICONDUCTORS DATA SHEET

74HC377; 74HCT General description. 2. Features and benefits. 3. Ordering information

Low-power configurable multiple function gate

Small Signal Fast Switching Diode

14-stage ripple-carry binary counter/divider and oscillator

IP4294CZ10-TBR. ESD protection for ultra high-speed interfaces

Triple single-pole double-throw analog switch

74HC154; 74HCT to-16 line decoder/demultiplexer

74HC175; 74HCT175. Quad D-type flip-flop with reset; positive-edge trigger

HEF4013B. 1. General description. 2. Features and benefits. 3. Applications. 4. Ordering information. Dual D-type flip-flop

NPN wideband silicon germanium RF transistor

74HC238; 74HCT to-8 line decoder/demultiplexer

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

74HCU General description. 2. Features and benefits. 3. Ordering information. Hex unbuffered inverter

General purpose low power phase control General purpose low power switching Solid-state relay. Symbol Parameter Conditions Min Typ Max Unit V DRM

ESD protection for high-speed interfaces

8-bit binary counter with output register; 3-state

Single-channel common-mode filter with integrated ESD protection network

8-channel analog multiplexer/demultiplexer

PUSB3FR4. 1. Product profile. ESD protection for ultra high-speed interfaces. 1.1 General description. 1.2 Features and benefits. 1.

74HC4040; 74HCT stage binary ripple counter

74HC138; 74HCT to-8 line decoder/demultiplexer; inverting

DDSL01. Secondary protection for DSL lines. Features. Description

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

74HC2G02; 74HCT2G General description. 2. Features and benefits. 3. Ordering information. Dual 2-input NOR gate

74HC107; 74HCT107. Dual JK flip-flop with reset; negative-edge trigger

74HC165; 74HCT bit parallel-in/serial out shift register

DISCRETE SEMICONDUCTORS DATA SHEET M3D848. CGD MHz, 20 db gain power doubler amplifier. Product specification 2002 Oct 08

The 74LVC1G04 provides one inverting buffer.

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

74HC574; 74HCT574. Octal D-type flip-flop; positive edge-trigger; 3-state

BLL6G1214L Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1.

Silicon PIN Photodiode

74HC393; 74HCT393. Dual 4-bit binary ripple counter

BUK A. N-channel TrenchMOS logic level FET

Transcription:

Rev. 02 24 June 2008 Product data sheet 1. Product profile 1.1 General description in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package. 1.2 Features Non-repetitive peak reverse power dissipation: P ZSM 30 W Bidirectional configuration Small plastic package suitable for surface-mounted design AEC-Q101 qualified 1.3 Applications General regulation functions Overvoltage protection for ElectroLuminescent (EL) driver circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per device V Z working voltage I Z = 1 ma 95-105 V I ZSM non-repetitive peak reverse current [1] - - 0.23 A [1] t p = 100 µs; square wave; T j =25 C prior to surge 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode (diode 1) 2 cathode (diode 2) 1 2 1 2 006aab041

3. Ordering information 4. Marking Table 3. Ordering information Type number Package Name Description Version SC-76 plastic surface-mounted package; 2 leads SOD323 Table 4. Marking codes Type number Marking code AT 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device I ZSM non-repetitive peak reverse [1] - 0.23 A current P ZSM non-repetitive peak reverse [1] - 30 W power dissipation [2] - 75 W P tot total power dissipation T amb 25 C [3] - 300 mw [4] - 540 mw [5] - 830 mw T j junction temperature - 150 C T amb ambient temperature 55 +150 C T stg storage temperature 65 +150 C [1] t p = 100 µs; square wave; T j =25 C prior to surge [2] t p =10µs; square wave; T j =25 C prior to surge [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2. [5] Device mounted on a ceramic PCB, Al 2 O 3, standard footprint. _2 Product data sheet Rev. 02 24 June 2008 2 of 10

1.0 006aab042 P tot (W) 0.8 (1) 0.6 (2) 0.4 (3) 0.2 0 75 25 25 75 125 175 T amb ( C) (1) Ceramic PCB, Al 2 O 3, standard footprint (2) FR4 PCB, mounting pad for cathode 1 cm 2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device R th(j-a) thermal resistance from in free air [1] - - 415 K/W junction to ambient [2] - - 230 K/W [3] - - 150 K/W R th(j-sp) thermal resistance from junction to solder point [4] - - 90 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2. [3] Device mounted on a ceramic PCB, Al 2 O 3, standard footprint. [4] Soldering point of cathode tab. _2 Product data sheet Rev. 02 24 June 2008 3 of 10

7. Characteristics Table 7. Characteristics T j =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per device V Z working voltage I Z = 1 ma 95-105 V r dif differential resistance I Z = 1 ma - - 700 Ω I R reverse current V R = 76 V - - 0.05 µa S Z temperature coefficient I Z = 1 ma - 123 - mv/k C d diode capacitance f = 1 MHz; V R =0V - - 10 pf 10 3 006aab043 150 006aab044 P ZSM (W) S Z (mv/k) 140 10 2 130 10 120 110 1 10 5 10 4 10 3 10 2 t p (s) 100 0 1 2 3 4 5 I Z (ma) Fig 2. T j =25 C (prior to surge) T j =25 C to 150 C Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values Fig 3. Temperature coefficient as a function of working current; typical values _2 Product data sheet Rev. 02 24 June 2008 4 of 10

10 2 I Z (A) 10 3 006aab045 10 4 10 5 10 6 10 7 10 8 10 9 80 90 100 110 120 V Z (V) Fig 4. T j =25 C Working current as a function of working voltage; typical values 8. Application information High-voltage Zener diodes can be used as overvoltage protection diodes for Integrated Circuits (IC) due to their ability to cut off the applied voltage at a well-defined value. One important application is the protection of EL driver circuits where a driver IC is connected to an EL foil. Since both the foil as well as the IC are sensitive against voltage overstress, it is necessary to install an additional protection device in the circuit. Commonly, a peak-to-peak voltage of 220 V should not be exceeded, such that two 100 V diodes in bidirectional configuration are used. CHF CHF 1 10 V+ V BAT CLF CLF 2 9 L+ Renable ENABLE E 3 DRIVER IC 8 VO L n.c. 4 7 L GND 5 n.c. 6 EL LAMP 006aab046 Fig 5. Application diagram _2 Product data sheet Rev. 02 24 June 2008 5 of 10

9. Test information 10. Package outline 9.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 1.35 1.15 1.1 0.8 1 0.45 0.15 2.7 2.3 1.8 1.6 Dimensions in mm 2 0.40 0.25 0.25 0.10 03-12-17 Fig 6. Package outline SOD323 (SC-76) 11. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number Package Description Packing quantity 3000 10000 SOD323 4 mm pitch, 8 mm tape and reel -115-135 [1] For further information and the availability of packing methods, see Section 15. _2 Product data sheet Rev. 02 24 June 2008 6 of 10

12. Soldering 3.05 2.1 solder lands solder resist 1.65 0.95 0.5 (2 ) 0.6 (2 ) solder paste occupied area 0.5 (2 ) 0.6 (2 ) 2.2 Dimensions in mm sod323_fr Fig 7. Reflow soldering footprint SOD323 (SC-76) 5 2.9 1.5 (2 ) solder lands solder resist occupied area 1.2 2.75 (2 ) Dimensions in mm preferred transport direction during soldering sod323_fw Fig 8. Wave soldering footprint SOD323 (SC-76) _2 Product data sheet Rev. 02 24 June 2008 7 of 10

13. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes _2 20080624 Product data sheet - _1 Modifications: Section 1.1 General description : adapted Section 1.2 Features : adapted Table 2 Pinning : graphic symbol amended Table 6 Thermal characteristics : updated Section 8 Application information : adapted Section 12 Soldering : updated Section 14 Legal information : updated _1 20080128 Product data sheet - - _2 Product data sheet Rev. 02 24 June 2008 8 of 10

14. Legal information 14.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 14.3 Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com _2 Product data sheet Rev. 02 24 June 2008 9 of 10

16. Contents 1 Product profile.......................... 1 1.1 General description...................... 1 1.2 Features.............................. 1 1.3 Applications........................... 1 1.4 Quick reference data..................... 1 2 Pinning information...................... 1 3 Ordering information..................... 2 4 Marking................................ 2 5 Limiting values.......................... 2 6 Thermal characteristics................... 3 7 Characteristics.......................... 4 8 Application information................... 5 9 Test information......................... 6 9.1 Quality information...................... 6 10 Package outline......................... 6 11 Packing information...................... 6 12 Soldering.............................. 7 13 Revision history......................... 8 14 Legal information........................ 9 14.1 Data sheet status....................... 9 14.2 Definitions............................. 9 14.3 Disclaimers............................ 9 14.4 Trademarks............................ 9 15 Contact information...................... 9 16 Contents.............................. 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 24 June 2008 Document identifier: _2