GF705 MagnetoResistive Magnetic Field Sensor

Similar documents
The sensor can be operated at any frequency between DC and 1 MHz.

Schottky barrier quadruple diode

AAV003-10E Current Sensor

Planar PIN diode in a SOD323 very small plastic SMD package.

Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package

BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description

10 ma LED driver in SOT457

DISCRETE SEMICONDUCTORS DATA SHEET. dbook, halfpage M3D088. BB201 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

HEF4011B. 1. General description. 2. Features and benefits. 3. Ordering information. 4. Functional diagram. Quad 2-input NAND gate

Quad 2-input NAND Schmitt trigger

1-of-4 decoder/demultiplexer

NPN wideband transistor in a SOT89 plastic package.

AAT001-10E TMR Angle Sensor

LIN-bus ESD protection diode

SiGe:C Low Noise High Linearity Amplifier

DISCRETE SEMICONDUCTORS DATA SHEET M3D848. CGD MHz, 20 db gain power doubler amplifier. Product specification 2002 Oct 08

Femtofarad bidirectional ESD protection diode

HEF4021B. 1. General description. 2. Features and benefits. 3. Ordering information. 8-bit static shift register

74HC02; 74HCT General description. 2. Features and benefits. Ordering information. Quad 2-input NOR gate

DATA SHEET. BF245A; BF245B; BF245C N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

The 74LVC1G11 provides a single 3-input AND gate.

3-to-8 line decoder, demultiplexer with address latches

Passivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control

BAS16 series. 1. Product profile. High-speed switching diodes. 1.1 General description. 1.2 Features and benefits. 1.

Medium power Schottky barrier single diode

74HC377; 74HCT General description. 2. Features and benefits. 3. Ordering information

IP4220CZ6. 1. Product profile. Dual USB 2.0 integrated ESD protection. 1.1 General description. 1.2 Features and benefits. 1.

Low-power configurable multiple function gate

Silicon temperature sensors. Other special selections are available on request.

HEF4013B. 1. General description. 2. Features and benefits. 3. Applications. 4. Ordering information. Dual D-type flip-flop

Triple single-pole double-throw analog switch

45 V, 100 ma NPN general-purpose transistors

74HC154; 74HCT to-16 line decoder/demultiplexer

74HC175; 74HCT175. Quad D-type flip-flop with reset; positive-edge trigger

74HC238; 74HCT to-8 line decoder/demultiplexer

DISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors

CAN bus ESD protection diode

14-stage ripple-carry binary counter/divider and oscillator

PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

8-channel analog multiplexer/demultiplexer

40 V, 200 ma NPN switching transistor

74HCU General description. 2. Features and benefits. 3. Ordering information. Hex unbuffered inverter

45 V, 100 ma NPN/PNP general-purpose transistor

74HC107; 74HCT107. Dual JK flip-flop with reset; negative-edge trigger

65 V, 100 ma PNP/PNP general-purpose transistor

PMEG3005EB; PMEG3005EL

BZT52H series. Single Zener diodes in a SOD123F package

PMEG3015EH; PMEG3015EJ

PMEG2020EH; PMEG2020EJ

74HC2G02; 74HCT2G General description. 2. Features and benefits. 3. Ordering information. Dual 2-input NOR gate

PRTR5V0U2F; PRTR5V0U2K

8-bit binary counter with output register; 3-state

74HC4040; 74HCT stage binary ripple counter

ESD protection for high-speed interfaces

Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package

74HC138; 74HCT to-8 line decoder/demultiplexer; inverting

74HC574; 74HCT574. Octal D-type flip-flop; positive edge-trigger; 3-state

Single-channel common-mode filter with integrated ESD protection network

2PD601ARL; 2PD601ASL

BLL6G1214L Product profile. LDMOS L-band radar power transistor. 1.1 General description. 1.2 Features and benefits. 1.

PESDxU1UT series. 1. Product profile. Ultra low capacitance ESD protection diode in SOT23 package. 1.1 General description. 1.

74HC165; 74HCT bit parallel-in/serial out shift register

74HC393; 74HCT393. Dual 4-bit binary ripple counter

How To Make An Electric Static Discharge (Esd) Protection Diode

The 74LVC1G04 provides one inverting buffer.

Hex buffer with open-drain outputs

74HC74; 74HCT General description. 2. Features and benefits. 3. Ordering information

IP4234CZ6. 1. Product profile. Single USB 2.0 ESD protection to IEC level General description. 1.2 Features. 1.

BAS70 series; 1PS7xSB70 series

74HC4067; 74HCT channel analog multiplexer/demultiplexer

Hardware Documentation. Data Sheet HAL 202. Hall-Effect Sensor. Edition Sept. 18, 2014 DSH000159_002EN

ESD Line Ultra-Large Bandwidth ESD Protection

BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

BC807; BC807W; BC327

74HC573; 74HCT General description. 2. Features and benefits. Octal D-type transparent latch; 3-state

DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.

3-input EXCLUSIVE-OR gate. The 74LVC1G386 provides a 3-input EXCLUSIVE-OR function.

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan Sep 21.

DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

EMC6D103S. Fan Control Device with High Frequency PWM Support and Hardware Monitoring Features PRODUCT FEATURES ORDER NUMBERS: Data Brief

DISCRETE SEMICONDUCTORS DATA SHEET

TLI4946. Datasheet TLI4946K, TLI4946-2K, TLI4946-2L. Sense and Control. May 2009

DATA SHEET. PMEGXX10BEA; PMEGXX10BEV 1 A very low V F MEGA Schottky barrier rectifier DISCRETE SEMICONDUCTORS

AN1991. Audio decibel level detector with meter driver

IP4294CZ10-TBR. ESD protection for ultra high-speed interfaces

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858

NPN wideband silicon RF transistor

74HC32; 74HCT General description. 2. Features and benefits. Quad 2-input OR gate

NPN wideband silicon germanium RF transistor

General purpose low power phase control General purpose low power switching Solid-state relay. Symbol Parameter Conditions Min Typ Max Unit V DRM

INTEGRATED CIRCUITS. NE558 Quad timer. Product data Supersedes data of 2001 Aug Feb 14

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct Feb 03.

Preamplifier Circuit for IR Remote Control

SEMICONDUCTOR TECHNICAL DATA

Suggested PCB Land Pattern Designs for Leaded and Leadless Packages, and Surface Mount Guidelines for Leadless Packages

MPG-D655. Thin Film Thermogenerator. Preliminary Datasheet

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package

8-bit synchronous binary down counter

DISCRETE SEMICONDUCTORS DATA SHEET

Transcription:

The is a magnetic fi eld sensor based on the multilayer Giant MagnetoResistive (GMR) effect. The Sensor contains a Wheatstone bridge with on-chip fl ux concentrators to improve the sensitivity. The sensor is ideal for measuring magnetic fi elds in a linear range from 1.8 mt up to 8 mt. A typical application is endpoint detection through a cylinder of stainless steel: A moving magnet inside a thick-walled cylinder is detected by a sensor from the outside. The is available as bond version (bare die) and as fl ip-chip or LGA-package for SMD assembly. Product Overview GF708 article description Package Delivery type GF708APA-AE Flip-chip Tape on reel (5000) GF708ACA-AB Die on wafer Waferbox GF708AKA-AC SIL6 Waffl e pack (90) GF708AMA-AE LGA6S Tape on reel (2500) Minimum order quantities apply. Quick Reference Guide Symbol Parameter Min. typ. Max. Unit V CC Supply voltage - 5.0 - V B Lin Linear magnetic range 1.8-8.0 mt S Sensitivity (in linear range) 8 10 13 mv/v/mt R B Bridge resistance 4.0 5.0 7.0 ΩW absolute Maximum Ratings In accordance with the absolute maximum rating system (IEC60134). Symbol Parameter Min. Max. Unit V CC Supply voltage -9.0 +9.0 V Features Based on the GiantMagnetoResistive (GMR) effect Flip-chip assembly (BGA) Temperature range from -40 C to +125 C advantages Large working distance Excellent absolute accuracy Large range of magnetic fi eld strength Very small size Contactless fi eld measuring Switching with adjustable switching thresholds applications Endpoint detection in cylinders Reference monitoring Magnetic switches Ambient temperature -40 +125 C T stg Storage temperature -65 +150 C Stresses beyond those listed under Absolute maximum ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Page 1 of 7

Magnetic Data Symbol Parameter Conditions Min. typ. Max. Unit B Lin Linear magnetic fl ux density range (abs) See Fig.1 1.8-8.0 mt B sat Saturation magnetic fl ux density See Fig.1 - ±25 - mt At B sat the sensor delivers the maximal output voltage V peak. By exceeding the value of B sat the output signal is no longer unique. Electrical Data = 25 C; unless otherwise specifi ed. Symbol Parameter Conditions Min. typ. Max. Unit V CC Supply voltage - 5.0 - V S Sensitivity B = (1.8...8) mt 8 10 13 mv/v/mt TC S Temperature coeffi cient of Sensitivity 2) = (-40 +125) C -0.26-0.22-0.18 %/K R B Bridge resistance 3) 4.0 5.0 7.0 kω TC RB Temperature coeffi cient of RB 4) = (-40 +125) C 0.17 0.20 0.23 %/K V peak Maximum output voltage 5) See Fig.1-110 - mv/v f Frequency range 1 6) - - MHz 2) TC S = 100 S (T2) - S (T S (T (T 2 - T 1 ) with T 1 = 25 C; T 2 = 80 C. 3) Bridge resistance between pads 1 and 3 and 2 and 4. 4) TC RB = 100 R B(T2) - R B(T R B(T (T 2 - T 1 ) with T 1 = 25 C; T 2 = 80 C. 5) Maximal output voltage at B sat. 6) No signifi cant amplitude attenuation. Fig. 1: Typical output voltage of the depending on the magnetic flux density. Page 2 of 7

accuracy = 25 C; unless otherwise specifi ed. Symbol Parameter Conditions Min. typ. Max. Unit V off Offset voltage per V CC See Fig. 1-5.0 - +5.0 mv/v TC Voff Temperature coeffi cient of V off = (-40 +125) C -20 7 +25 µv/v/k ε Lin Linearity error B = (1.8 8) mt; see Fig. 2-2 5 % of Vout H C Hysteresis error See Fig. 3-0.05 0.1 mt The hysteresis error is ascertained in the magnetic fi eld, ramped from 10 mt to 10 mt and back to 10 mt. The value is specifi ed for the linear range B Lin. Fig. 2: Definition of linearity error ε Lin (schematic). Fig. 3: Definition of hysteresis error H C (schematic). In Fig. 4 the resistors R 23 and R 41 are covered by two fl ux concentrators (shields) to prevent an applied magnetic fi eld from infl uencing them. Therefore, when a fi eld is applied, the resistors R 12 and R 34 decrease in resistance, while the other two resistors under the fl ux concentrator do not. This imbalance leads to the bridge output. Fig. 4: Simplified circuit diagram. Page 3 of 7

as Bare Die and Flip-Chip Pinning Pad Symbol Parameter 1 V CC Supply voltage 2 +V out Positive output voltage 3 GND Ground 4 -V out Negative output voltage Note: Pin 1 is not marked on the chip. Since the chip is symmetrical, its orientation is only defi ned by its long and short side. Fig. 5: Top: on its pad / bump side shown with the direction of its sensitivity. Bottom: Marked side of the fl ip-chip version only. Mechanical Data Symbol Parameter Min. typ. Max. Unit A Length 1420 1460 1500 µm B Width 920 960 1000 µm Bare die C Height 240 250 260 µm d Diameter - 230 - µm A Length 1350 1400 1450 µm B Width 850 900 950 µm Flip-chip C Height 400 410 420 µm d Diameter - 300 - µm S Standoff 2) - 240 - µm a Pitch a - 1000 - µm b Pitch b - 500 - µm e Margin - 200 - µm Fig. 6: Chip outline of. After refl ow. 2) Diameter of solder ball before refl ow. Data for Packaging and Interconnection technologies Symbol Parameter Conditions Value Unit Bare die Flip-chip Pad material Au - Pad thickness 0.4 µm Solder ball material SnAg2.6Cu0.6 - Maximum solder temperature For 6 s 260 C Page 4 of 7

ama LGa6S Pinning Pad Symbol Parameter 1 +V out Positive output voltage 2 NC Not connected 3 GND Ground 4 V CC Supply voltage 5 -V out Negative output voltage 6-8 NC Not connected Fig. 7: AKA. Dimensions Fig. 8 LGA6S for AMA. Page 5 of 7

General Information Product Status Article APA-AB ACA-AB AMA-AE Note Status The product is in series production. The product is in series production. The product is in series production. The status of the product may have changed since this data sheet was published. The latest information is available on the internet at www.sensitec.com. Disclaimer Sensitec GmbH reserves the right to make changes, without notice, in the products, including software, described or contained herein in order to improve design and/or performance. Information in this document is believed to be accurate and reliable. However, Sensitec GmbH does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Sensitec GmbH takes no responsibility for the content in this document if provided by an information source outside of Sensitec products. In no event shall Sensitec GmbH be liable for any indirect, incidental, punitive, special or consequential damages (including but not limited to lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) irrespective the legal base the claims are based on, including but not limited to tort (including negligence), warranty, breach of contract, equity or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Sensitec product aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the General Terms and Conditions of Sale of Sensitec GmbH. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Unless otherwise agreed upon in an individual agreement Sensitec products sold are subject to the General Terms and Conditions of Sales as published at www.sensitec.com. Sensitec GmbH Georg-Ohm-Str. 11 35633 Lahnau Germany Tel. +49 6441 9788-0 Fax +49 6441 9788-17 www.sensitec.com sensitec@sensitec.com Page 6 of 7

General Information Application Information Applications that are described herein for any of these products are for illustrative purposes only. Sensitec GmbH makes no representation or warranty whether expressed or implied that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Sensitec products, and Sensitec GmbH accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the Sensitec product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Sensitec GmbH does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using Sensitec products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). Sensitec does not accept any liability in this respect. Life Critical Applications These products are not qualified for use in life support appliances, aeronautical applications or devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Copyright 2015 by Sensitec GmbH, Germany All rights reserved. No part of this document may be copied or reproduced in any form or by any means without the prior written agreement of the copyright owner. The information in this document is subject to change without notice. Please observe that typical values cannot be guaranteed. Sensitec GmbH does not assume any liability for any consequence of its use. Sensitec GmbH Georg-Ohm-Str. 11 35633 Lahnau Germany Tel. +49 6441 9788-0 Fax +49 6441 9788-17 www.sensitec.com sensitec@sensitec.com Page 7 of 7