RT8462. High Voltage High Current LED Driver Controller for Buck, Boost or Buck-Boost Topology. General Description. Features.



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RT High Voltage High Current LED Driver Controller for Buck, Boost or BuckBoost Topology General Description The RT is a current mode PWM controller designed to drive an external MOSFET for high current LED applications. With a current sense amplifier threshold of 90mV, the LED current is programmable with one external current sense resistor. With the maximum operating input voltage of 3V and output voltage up to 0V, the RT is ideal for buck, boost or buckboost operation. With the switching frequency programmable over 00kHz to MHz, the external inductor and capacitors can be small while maintaining high efficiency. Dimming can be done by either analog or digital. The builtin clamping comparator and filter allow easy low noise analog dimming conversion from digital signal with only one external capacitor. The RT is available in SOP and WQFNL 3x3 packages. Ordering Information RT Note : Richtek products are : Package Type S : SOP QW : WQFNL 3x3 (WType) Lead Plating System G : Green (Halogen Free and Pb Free) Z : ECO (Ecological Element with Halogen Free and Pb free) RoHS compliant and compatible with the current requirements of IPC/JEDEC JSTD00. Suitable for use in SnPb or Pbfree soldering processes. Features High Voltage Capability : V IN Up to 3V, LED Sensing Threshold Common Mode Voltage Up to 0V Buck, Boost or BuckBoost Operation Programmable Switching Frequency Easy Dimming Control : Analog or Digital Converting to Analog with One External Capacitor Programmable SoftStart to Avoid Inrush Current Programmable Over Voltage Protection V IN Under Voltage Lockout and Thermal Shutdown RoHS Compliant and Halogen Free Applications General Industrial High Power LED Lighting Desk Lights and Room Lighting Building and Street Lighting Industrial Display Backlight Pin Configurations (TOP VIEW) RSET ISW ISP ISN VC ACTL DCTL RSET ISW ISP ISN 3 3 5 7 SOP 3 0 9 NC NC GATE GBIAS 5 5 7 7 3 GATE GBIAS VCC OVP EN SS VCC 0 OVP 9 EN VC ACTL DCTL SS WQFNL 3x3

Marking Information RTGS RT GSYMDNN RTGS : Product Number YMDNN : Date Code RTZQW YM DNN : Product Number YMDNN : Date Code Typical Application Circuit V IN.5V to 3V 5V Analog Dimming R VC 0k C VC 3.3nF L µh C IN 0µF RT VCC GATE 9 EN ISW 3 ACTL ISP 7 DCTL ISN 0 5 OVP VC RSET SS 3 C GBIAS SS 0.µF C B µf M D R SW 0.05 R RSET 30k C OUT µf R R R SENSE 0.7 V OUT V OUT 0V (Max.) LEDs Figure. Analog Dimming in Boost Configuration D V IN 0V (Max.) C IN C OUT µf V IN.5V to 3V C IN 0µF 5V RT VCC 9 EN Analog Dimming ACTL 7 DCTL 5 VC R VC 0k SS 3 C SS GBIAS C VC 0.µF 3.3nF C B µf ISP 3 ISN GATE ISW RSET OVP 0 R SENSE 0.7 R RSET LEDs M L µh R SW 0.05 Figure. Analog Dimming in Buck Configuration

L µh D V IN.5V to 3V C IN 0µF RT M VCC GATE R SW 5V 9 EN ISW 0.05 Analog ISN Dimming ACTL 3 7 DCTL ISP 0 5 OVP VC R VC RSET 0k SS 3 C GBIAS R RSET C SS VC 0.µF 3.3nF C B µf R C OUT µf R R SENSE 0.7 V OUT V OUT 0V (Max.) LEDs Figure 3. Analog Dimming in BuckBoost Configuration Functional Pin Description SOP Pin No. WQFNL 3x3 RSET ISW 3 3 ISP Pin Name Pin Function Switch Frequency Set Pin. Connect a resistor from RSET to. R RSET = 30kΩ will set f SW = 350kHz. External MOSFET Switch Current Sense. Connect the current sense resistor between external NMOSFET switch and the ground. LED Current Sense Amplifier Positive Input with Common Mode Up to 0V. ISN LED Current Sense Amplifier Negative Input. Voltage threshold between ISP and ISN is 90mV with common mode voltage up to 0V. 5 5 VC PWM Control Loop Compensation. ACTL Analog Dimming Control. The effective programming voltage range of the pin is between 0.V and.v. 7 7 DCTL By adding a 0.7μF filtering capacitor on ACTL pin, the PWM dimming signal on DCTL pin can be averaged and converted into analog dimming signal on the ACTL pin. SS SoftStart. A capacitor of at least 0nF is required for proper softstart. 9 9 EN 0 0 OVP Chip Enable (Active High). When this pin voltage is low, the chip is in shutdown mode. Over Voltage Protection. The PWM converter turns off when the voltage of the pin goes to higher than.v. VCC Power Supply Pin of the Chip. For good bypass, a low ESR capacitor is required., 7 (Exposed Pad) Ground. The Exposed Pad must be Soldered to a Large PCB and Connected to for Maximum Power Dissipation. 3 3 GBIAS Internal Gate Driver Bias. A good bypass capacitor is required. GATE External MOSFET Switch Gate Driver Output. 5, NC No Internal Connection. 3

Function Block Diagram EN RSET VCC OVP.V.5V.V Shutdown.5V OSC S R R R Q VOC GBIAS GATE VC 0mV ISW SS DCTL µa.v GM.V ISN ISP ACTL V ISP V ISN (mv) 90 V 0 0.. V ACTL (V) Figure

Absolute Maximum Ratings (Note ) Supply Input Voltage, VCC 0.3 to 3V GBIAS, GATE 0.3 to 0V ISW 0.3 to V ISP, ISN 0.3 to V Recommended Operating Conditions (Note 5) Supply Input Voltage Range, VCC.5V to 3V Electrical Characteristics Overall RT DCTL, ACTL, OVP 0.3 to V (Note ) EN 0.3 to 0V Power Dissipation, P D @ T A = 5 C SOP.0W WQFNL 3x3.7W Package Thermal Resistance (Note 3) SOP, θ JA 00 C/W WQFNL 3x3, θ JA C/W WQFNL 3x3, θ JC 7.5 C/W Junction Temperature 50 C Lead Temperature (Soldering, 0 sec.) 0 C Storage Temperature Range 5 C to 50 C ESD Susceptibility (Note ) HBM (Human Body Model) kv MM (Machine Model) 00V Junction Temperature Range 0 C to 5 C (VCC = V, No Load on any Output, TA = 5 C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Supply Current I VCC V VC 0.V (Switching off) 7. ma Shutdown Current I SHDN V EN 0.7V μa EN Threshold LogicHigh V IH Voltage LogicLow V IL 0.5 EN Input Current V EN 3V. μa Current Sense Amplifier Input Threshold (V ISP V ISN ) V ACTL.5V, V common mode 0V 90 9 V ACTL.V, V common mode 0V mv ISP Input Current I ISP.5V V ISP 0V 0 μa ISN Input Current I ISN.5V V ISN 0V 0 μa VC Output Current I VC 0.5V V C.V ±0 μa VC Threshold for PWM Switch Off 0.7 V V 5

LED Dimming Parameter Symbol Test Conditions Min Typ Max Unit Analog Dimming ACTL Pin Input Current I ACTL V ACTL =.V V ACTL = 0.V 0 LED Current OnThreshold at ACTL V ACTL_On.3 V LED Current Off Threshold at ACTL V ACTL_Off 0.3 V DCTL Input Current I DCTL 0.3V V DCTL 5V 0.5 μa DCTL Threshold Voltage PWM Control V DCTL_H (Note ) V DCTL_L (Note ) 0.3 Switching Frequency f SW R RSET = 30kΩ 0 350 0 khz Minimum OffTime R RSET = 30kΩ 50 ns Switch Gate Driver GBIAS Voltage V GBIAS I GBIAS = 0mA 7..5 9. V GATE Voltage High GATE Voltage Low V GATE_H V GATE_L I GATE = 50mA 7. 7. I GATE = 00μA 7.5 7. 7.9 I GATE = 0mA 0.5 I GATE = 00μA 0. 0.9 GATE Drive Rise and Fall Time nf Load at GATE 0 00 ns PWM Switch Current Limit I Threshold SW_LIM 0 0 5 mv OVP and SoftStart OVP Threshold V OVP_th. V OVP Input Current I OVP 0.7V V OVP.5V 0. μa SoftStart Pin Current I SS V SS V μa Thermal Shutdown Protection T SD 5 Thermal Shutdown Hysteresis ΔT SD 0 Note. Stresses beyond those listed Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect device reliability. Note. If connected with a 0kΩ serial resistor, ACTL and DCTL can go up to 3V. Note 3. For WQFNL 3x3, θ JA is measured in natural convection at T A = 5 C on a higheffective thermal conductivity test board of JEDEC 57 thermal measurement standard. The measurement case position of θ JC is on the exposed pad of the package. For SOP, θ JA is measured in natural convection at T A = 5 C on a loweffective thermal conductivity test board of JEDEC 53 thermal measurement standard. Note. Devices are ESD sensitive. Handling precaution is recommended. Note 5. The device is not guaranteed to function outside its operating conditions. Note. Guaranteed by design, not subjected to production test. μa V V V C

Typical Operating Characteristics 00 Boost Efficiency vs. Input Voltage 00 Buck Boost Efficiency vs. Input Voltage 95 95 Efficiency (%) 90 5 0 Efficiency (%) 90 5 0 75 75 70 VOUT = 0V, IOUT = 0mA, L = μh 70 VOUT = 0V, IOUT = 0mA, L = μh 5 7 30 5 7 30 00 Buck Efficiency vs. Input Voltage 00 Switching Frequency vs. Input Voltage Efficiency (%) 95 90 5 0 75 Switching Frequency (khz) 30 30 30 30 VOUT = 0V, IOUT = 0mA, L = μh 70 5 7 30 300 0 3 3 0 Supply Current vs. Input Voltage 0 Shutdown Current vs. Input Voltage 9 Supply Current (ma) 7 5 3 Shutdown Current (μa) 0 0 VIN =.5V to 3V 0 VIN =.5V to 3V, VEN = 0V 0 3 3 0 3 3 7

V ISP V ISN Threshold vs. Input Voltage V ISP V ISN Threshold vs. Temperature 00 00 VISP VISN Threshold (mv) 95 90 5 VISP VISN Threshold (mv) 95 90 5 0 0 3 3 0 50 5 0 5 50 75 00 5 Temperature ( C) 0. ACTL Off Threshold vs. Input Voltage 50 LED Current vs. ACTL Voltage 0.7 00 ACTL Off Threshold (V) 0. 0.5 0. 0.3 0. LED Current (ma) 350 300 50 00 50 00 0. 50 0.0 0 3 3 0 0. 0. 0. 0... ACTL Voltage (V) 50 LED Current vs. DCTL PWM Duty 50 ISW Threshold vs. Input Voltage 00 0 LED Current (ma) 350 300 50 00 50 00 ISW Threshold (mv) 30 0 0 00 90 0 70 50 0 f = 0kHz 0 50 0 0 0 0 0 00 0 3 3 DCTL PWM Duty (%)

.0 OVP vs. Input Voltage GATE Voltage vs. Input Voltage OVP (V).9..7. OVP_H OVP_L GATE Voltage (V) GATE_Hi.5 GATE_Lo No Load. 0 0 3 3 0 3 3 Power On from EN Power Off from EN V EN (5V/Div) V EN (5V/Div) V OUT (0V/Div) VOUT (0V/Div) GATE (0V/Div) GATE (0V/Div) I OUT (500mA/Div) I OUT (500mA/Div) Time (.5ms/Div) Time (00μs/Div) 9

Applications Information The RT is a current mode PWM controller designed to drive an external MOSFET for high current LED applications. The LED current can be programmed by an external resistor. The input voltage range of the RT can be up to 3V and the output voltage can be up to 0V. The RT provides analog and PWM dimming to achieve LED current control. GBIAS Regulator and Bypass Capacitor The GBIAS pin requires a capacitor for stable operation and to store the charge for the large GATE switching currents. Choose a 0V rated low ESR, X7R or X5R ceramic capacitor for best performance. The value of a μf capacitor will be adequate for many applications. Place the capacitor close to the IC to minimize the trace length to the GBIAS pin and also to the IC ground. An internal current limit on the GBIAS output protects the RT from excessive onchip power dissipation. The GBIAS pin has its own under voltage disable (UVLO) set to.3v(typical) to protect the external FETs from excessive power dissipation caused by not being fully enhanced. If the input voltage, VIN, will not exceed V, then the GBIAS pin should be connected to the input supply. Be aware if GBIAS supply is used to drive extra circuits besides RT, typically the extra GBIAS load should be limited to less than 0mA. Loop Compensation The RT uses an internal error amplifier whose compensation pin (VC) allowing the loop response optimized for specific application. The external inductor, output capacitor and the compensation resistor and capacitor determine the loop stability. The inductor and output capacitor are chosen based on performance, size and cost. The compensation resistor and capacitor at VC are selected to optimize control loop response and stability. For typical LED applications, a 3.3nF compensation capacitor at VC is adequate, and a series resistor should always be used to increase the slew rate on the VC pin to maintain tighter regulation of LED current during fast transients on the input supply to the converter an external resistor in series with a capacitor is connected from the VC pin to to provide a pole and a zero for proper loop compensation. The typical compensation for the RT is 0kΩ and 3.3nF. SoftStart The softstart of the RT can be achieved by connecting a capacitor from SS pin to. The builtin softstart circuit reduces the startup current spike and output voltage overshoot. The softstart time is determined by the external capacitor charged by an internal μa constant charging current. The SS pin directly limits the rate of voltage rise on the VC pin, which in turn limits the peak switch current. The softstart interval is set by the softstart capacitor selection according to the equation : tss = CSS.V μa A typical value for the softstart capacitor is 0.μF. The softstart capacitor is discharged when EN/UVLO falls below its threshold, during an over temperature event or during an GBIAS under voltage event. LED Current Setting The LED current is programmed by placing an appropriate value current sense resistor between the ISP and ISN pins. Typically, sensing of the current should be done at the top of the LED string. The ACTL pin should be tied to a voltage higher than.v to get the fullscale 90mV (typical) threshold across the sense resistor. The ACTL pin can also be used to dim the LED current to zero, although relative accuracy decreases with the decreasing voltage sense threshold. When the ACTL pin voltage is less than.v, the LED current is : (VACTL 0.) 0.9 ILED = RSENSE Where, R SENSE is the resistor between ISP and ISN. When the voltage of ACTL is higher than.v, the LED current is regulated to : I LED(MAX) 90mV = R SENSE 0

The ACTL pin can also be used in conjunction with a thermistor to provide over temperature protection for the LED load, or with a voltage divider to V IN to reduce output power and switching current when V IN is low. The presence of a time varying differential voltage signal (ripple) across ISP and ISN at the switching frequency is expected. The amplitude of this signal is increased by high LED load current, low switching frequency and/or a smaller value output filter capacitor. The compensation capacitor on the VC pin filters the signal so the average difference between ISP and ISN is regulated on the userprogrammed value. Programmable Switching Frequency The RSET frequency adjust pin allows the user to program the switching frequency from 00kHz to MHz for optimized efficiency and performance or external component size. Higher frequency operation allows for smaller component size but increases switching losses and gate driving current, and may not allow sufficiently high or low duty cycle operation. Lower frequency operation gives better performance but with larger external component size. For an appropriate R RSET resistor value see Table or Figure 5. An external resistor from the RSET pin to is requireddo not leave this pin open. Table. Switching Frequency vs. R RSET Value (% Resistors) f OSC (khz) R RSET (kω) 000.3 00. 00. 500 0.9 300 3.0 00 0.35 00 30 Frequency (khz) Frequency vs. R RSET 000 900 00 700 00 500 00 300 00 00 0 0 5 30 5 0 75 90 05 0 35 R RSET (kω) (kω) Figure 5. Switching Frequency vs. R RSET Output Over Voltage Setting The RT is equipped with Over Voltage Protection (OVP) function. When the voltage at OVP pin exceeds a threshold of approximately.v, the power switch is turned off. The power switch can be turned on again once the voltage at OVP pin drops below.v. For the Boost and BuckBoost application, the output voltage could be clamped at a certain voltage level. The OVP voltage can be set by the following equation : R VOUT, OVP =. R Where, R and R are the voltage divider from V OUT to with the divider center node connected to OVP pin. ISW Sense Resistor Selection The resistor, R SW, between the source of the external NMOSFET and should be selected to provide adequate switch current to drive the application without exceeding the 0mV (typical) current limit threshold on the ISW pin of RT. For real applications, select a resistor that gives a switch current at least 30% greater than the required LED current. For Buck application, select a resistor according to : 0.0V RSW, Buck = IOUT

For BuckBoost application, select a resistor according to : VIN 0.0V RSW, BuckBoost = (VIN V OUT ) IOUT For Boost application, select a resistor according to : VIN 0.0V RSW, Boost = VOUT I OUT The placement of R SW should be close to the source of the NMOSFET and of the RT. The ISW pin input to RT should be a Kelvin connection to the positive terminal of R SW. Over Temperature Protection The RT has Over Temperature Protection (OTP) function to prevent the excessive power dissipation from overheating. The OTP function will shut down switching operation when the die junction temperature exceeds 5 C. The chip will automatically start to switch again when the die junction temperature cools off. Inductor Selection The inductor used with the RT should have a saturation current rating appropriate to the maximum switch current selected with the R SW resistor. Choose an inductor value based on operating frequency, input and output voltage to provide a current mode ramp on ISW pin during the switch ontime of approximately 0mV magnitude. The following equations are useful to estimate the inductor value. For Buck application : For Boost application ( ) RSW VIN VOUT VIN LBoost = 0.0 VOUT fsw For BuckBoost application ( ) RSW VOUT VIN VOUT LBuck = 0.0 VIN fsw RSW VIN VOUT LBuck Boost = 0.0 VIN VOUT fsw ( ) Power MOSFET Selection For applications operating at high input or output voltages, the power NMOS FET switch is typically chosen for drain voltage VDS rating and low gate charge. Consideration of switch onresistance, R DS(ON), is usually secondary because switching losses dominate power loss. The GBIAS regulator on the RT has a fixed current limit to protect the IC from excessive power dissipation at high VIN, so the NMOSFET should be chosen so that the product of Qg at 5V and switching frequency does not exceed the GBIAS current limit. Schottky Diode Selection The Schottky diode, with their low forward voltage drop and fast switching speed, is necessary for the RT applications. In addition, power dissipation, reverse voltage rating and pulsating peak current are the important parameters for the Schottky diode selection. Choose a suitable Schottky diode whose reverse voltage rating is greater than maximum output voltage. The diode s average current rating must exceed the average output current. The diode conducts current only when the power switch is turned off (typically less than 50% duty cycle). If using the PWM feature for dimming, it is important to consider diode leakage, which increases with the temperature, from the output during the PWM low interval. Therefore, choose the Schottky diode with sufficiently low leakage current. Capacitor Selection The input capacitor reduces current spikes from the input supply and minimizes noise injection to the converter. For most the RT applications, a 0μF ceramic capacitor is sufficient. A value higher or lower may be used depending on the noise level from the input supply and the input current to the converter. In Boost application, the output capacitor is typically a ceramic capacitor and is selected based on the output voltage ripple requirements. The minimum value of the output capacitor C OUT is approximately given by the following equation : C OUT IOUT VOUT = V V f IN RIPPLE SW

For LED applications, the equivalent resistance of the LED is typically low and the output filter capacitor should be sized to attenuate the current ripple. Use of X7R type ceramic capacitors is recommended. Lower operating frequencies will require proportionately higher capacitor values. Thermal Considerations For continuous operation, do not exceed absolute maximum junction temperature. The maximum power dissipation depends on the thermal resistance of the IC package, PCB layout, rate of surrounding airflow, and difference between junction and ambient temperature. The maximum power dissipation can be calculated by the following formula : P D(MAX) = (T J(MAX) T A ) / θ JA where T J(MAX) is the maximum junction temperature, T A is the ambient temperature, and θ JA is the junction to ambient thermal resistance. For recommended operating condition specifications, the maximum junction temperature is 5 C. The junction to ambient thermal resistance, θ JA, is layout dependent. For WQFNL 3x3 packages, the thermal resistance, θ JA, is C/W on a standard JEDEC 57 fourlayer thermal test board. For SOP packages, the thermal resistance, θ JA, is 00 C/W on a standard JEDEC 53 singlelayer thermal test board. The maximum power dissipation at T A = 5 C can be calculated by the following formula : P D(MAX) = (5 C 5 C) / ( C/W) =.7W for WQFNL 3x3 package P D(MAX) = (5 C 5 C) / (00 C/W) =.0W for SOP package Maximum Power Dissipation (W).0.0.0.00 0.0 0.0 0.0 0.0 0.00 SOP (SingleLayer PCB) Ambient Temperature ( C) Figure. Derating Curve of Maximum Power Dissipation Layout Consideration WQFNL 3x3 (FourLayer PCB) 0 5 50 75 00 5 PCB layout is very important to design power switching converter circuits. The layout guidelines are suggested as follows : The power components L, D, C IN, M and C OUT must be placed as close to each other as possible to reduce the ac current loop area. The PCB trace between power components must be as short and wide as possible due to large current flow through these traces during operation. The input capacitor C VCC must be placed as close to VCC pin as possible. Place the compensation components to VC pin as close as possible to avoid noise pick up. Connect pin and Exposed Pad to a large ground plane for maximum power dissipation and noise reduction. The maximum power dissipation depends on the operating ambient temperature for fixed T J(MAX) and thermal resistance, θ JA. The derating curves in Figure allow the designer to see the effect of rising ambient temperature on the maximum power dissipation. 3

Place these components as close as possible D L V IN M C OUT R SENSE R SW RSET ISW ISP ISN VC ACTL DCTL R VC 3 5 7 3 0 9 GATE GBIAS VCC OVP EN SS C VCC C IN C VC C SS Figure 7. PCB Layout Guide

Outline Dimension A H M J B F I C D Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A.53.73 0.33 0.3 B 3.0 3.9 0.50 0.57 C.3.753 0.053 0.09 D 0.330 0.50 0.03 0.00 F.9.3 0.07 0.053 H 0.7 0.5 0.007 0.00 I 0.0 0.5 0.00 0.00 J 5.79.9 0. 0. M 0.0.70 0.0 0.050 Lead SOP Plastic Package 5

D D SEE DETAIL A L E E e b A A A3 DETAIL A Pin # ID and Tie Bar Mark Options Note : The configuration of the Pin # identifier is optional, but must be located within the zone indicated. Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.700 0.00 0.0 0.03 A 0.000 0.050 0.000 0.00 A3 0.75 0.50 0.007 0.00 b 0.0 0.300 0.007 0.0 D.950 3.050 0. 0.0 D.300.750 0.05 0.09 E.950 3.050 0. 0.0 E.300.750 0.05 0.09 e 0.500 0.00 L 0.350 0.50 0.0 0.0 WType L QFN 3x3 Package Richtek Technology Corporation 5F, No. 0, Taiyuen Street, Chupei City Hsinchu, Taiwan, R.O.C. Tel: (3)5579 Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.