0.5 to 4.0 W, 798 to 800/808 to 812 nm Diode Lasers 2300 Series

Transcription

1 COMMERCIAL LASERS.5 to 4. W, 798 to 8/88 to 812 nm Diode s 23 Series Key Features.5, 1.2, 2. and 4. W CW power 5, 1, 2 and 5 µm apertures High-efficiency MOCVD quantum well design TEC option for wavelength control Open heatsink and window packages High reliability Applications Solid-state laser pumping Medical/ophthalmic Free-space communication Beacons/illumination The 23 series diode lasers offer high continuous wave (CW) optical power and high brightness with unsurpassed reliability. The small emitting aperture, combined with low beam divergence, makes the 23 series one of the highestbrightness CW diode lasers available in the industry today. The 23 series consists of partially coherent broad area emitters with relatively uniform emission over the emitting aperture. Operation is multi-longitudinal mode with a spectral envelope width of approximately 2 nm FWHM. The far field beam divergence in the plane perpendicular to the P/N junction is nearly Gaussian, while the lateral beam profile exhibits a multiple-transverse mode pattern typical of broad area emitters. Emitting apertures for 23 variants range from 5 to 5 µm, giving CW power output capability of up to 4 W with superlative reliability. For still higher-power 1 and 2 µm aperture devices, please see the 24 series products. The high efficiency of the quantum well structure, combined with low thermal resistance epi-down chip mounting, provides minimum junction temperature at high optical power. Low junction temperature and low thermal resistance packages extend lifetime and increase reliability. Convenient package options such as open heatsink and window packages with internal TEC and MPD allow easy integration into user systems. NORTH AMERICA: JDSU (5378) WORLDWIDE: JDSU WEBSITE:

2 2 Dimensions Diagram Package Style: Open Heatsink (C) (Specifications in inches [mm] unless otherwise noted.) Standard Tolerances inches: x.xx = ±.2 mm: x.x = ±.5 x.xxx = ±.1 x.xx = ± (2.18) Case is anode ( + ).2 (.51).4 Nom. (1.) Protective Tab.3.6 (.7) or (1.4) for 238-C Output.31 (8.).157 (3.98) Cathode Lead ( - ).11 (2.8) Insulator Stand-off.25 (6.4).125 (3.18) Hole,.9 (2.3) Dia. Counterbore,.18 (4.4) Dia..5 (1.2) Deep Package Style: TO-3 Window (H1) Pinout.12 (3.).27 (6.7) LID O.D..75 (19.) Pin Description 1 TEC (+) 2 Thermistor (1) 3 Thermistor (2) 4 cathode ( ) 5 anode (+), case 6 Monitor photodiode anode 7 Monitor photodiode cathode 8 TEC ( ) 1.53 (38.1) (3.15) 4 Typ..16 (4.) Dia. 2 plcs (1.) Typ. 1. (25.4) Dia. Bolt Circle.5 (12.7) Dia..5 (12.7) Output Window.1 (2.5) Dia. Within.2 (.5) of Package Axis.3 (.7) Depth of Output Facet Package Style: High Heat Load Window (P1) Pinout.73 (18.5).1 (2.5).12 (3.) 1.75 (44.5) 1.52 (38.61) 1.25 (31.8).16 (4.1) Dia. (4 PLCS) M3 THD (2 plcs) Pin Description A Output.75 (19.5) 1.25 (31.8) 1 TEC (-) Case 4. anode (+) 5. Thermistor (2) 6. Thermistor (1) 7. cathode (-) 8. Monitor photodiode anode 9. Monitor photodiode cathode 1. TEC (+).59 (15.) Window Detail A.12 (3.) Dia. Window.5 (12.7) Min..42 (1.8) Output Facet Depth.25 (.64) (2.5) (7 plcs).9 (22.9).25 (6.4).4 (1.2) Dia. (9 PLCS)

3 CW Output Power (W) 23 SERIES DIODE LASERS 3 Typical Optical Characteristics , 236 and 237 Emission 238 Emission FWHM = 32 o FWHM = 12 o FWHM = 34 o FWHM = 12 o (degrees) (degrees) (degrees) (degrees) Typical Emission Spectrum Wavelength (nm)

4 4 Available Configurations 235 Series 236 Series 237 Series 238 Series 235-C 236-C 237-C 238-C 2352-H P P P1 Electro-optical Specifications Parameter Symbol 235 Series 236 Series Unit Min. Typ. Max. Min. Typ. Max. Characteristics CW output power Po W Center wavelength λc 88 (±3) 81 (±3) 798 (±3) 8 (±3) nm 88 (±3) 812 (±3) nm Spectral width λ 2 2 nm Slope efficiency ηd = Po/(Iop Ith) W/A Conversion efficiency η = Po/(IopVop) 3 3 % Emitting dimensions W x H 5 x 1 1 x 1 µm FWHM beam divergence Parallel to junction // degrees Perpendicular to junction degrees Threshold current Ith A Operating current Iop A Operating voltage Vop (note 5 ) (note 5 ) Series resistance Rs Ω Thermal resistance Rth 12 1 C/W Recommended case temperature Tc C Absolute Maximum Ratings Reverse voltage Vrl 3 3 V Case operating temperature Top C Storage temperature range Tstg C Lead soldering temperature Tis 25 (5 sec.) 25 (5 sec.) C Monitor Photodiode 1 Sensitivity µa/mw Capacitance 6 6 pf Breakdown voltage Vbd V Operating voltage Vop 1 1 V Thermoelectric Cooler 1 Drive current P1 package ITE A H1 package ITE 1.4 NA A Drive voltage P1 package VTE V H1 package VTE 4.5 NA V Thermistor resistance Rtherm 1 1 kω 1. Not available on C package. 2. Typical values at 25 C and.6 NA collection optics. 3. Features common to these products include: a. Duty factor of 1%. b. Temperature coefficient of wavelength is approximately.27 to.3 nm/ C. c. Temperature coefficient of threshold current can be modeled as: I TH2 = I TH1 exp [(T 2 T 1)/T ] where T is a device constant of about 16 K. d.temperature coefficient of operating current is approximately 1% per C. 4. Modulation bandwidth of CW diode lasers is approximately 1 GHz for C package diodes. P package diodes roll off at slightly lower frequencies due to inductance of pins and internal leads. 5. Forward voltage is typically: V f = 1.5 V + I op x R s.

5 5 Electro-optical Specifications Continued Parameter Symbol 237 Series 238 Series Unit Min. Typ. Max. Min. Typ. Max. Characteristics CW output power Po 2 4 W Center wavelength λc 798 (±3) 8 (±3) 798 (±3) 8 (±3) nm 88 (±3) 812 (±3) 88 (±3) 812 (±3) nm Spectral width λ 2 2 nm Slope efficiency ηd = Po/(Iop Ith) W/A Conversion efficiency η = Po/(IopVop) 3 3 % Emitting dimensions (note 6 ) W x H 2 x 1 5 x 1 µm FWHM beam divergence Parallel to junction // degrees Perpendicular to junction degrees Threshold current Ith A Operating current Iop A Operating voltage Vop (note 5 ) (note 5 ) Series resistance Rs Ω Thermal resistance Rth 8 4 C/W Recommended case temperature Tc C Absolute Maximum Ratings Reverse voltage Vrl 3 3 V Case operating temperature Top C Storage temperature range Tstg C Lead soldering temperature Tis 25 (5 sec.) 25 (5 sec.) C Monitor Photodiode 1 Sensitivity µa/mw Capacitance 6 6 pf Breakdown voltage Vbd V Operating voltage Vop 1 1V V Thermoelectric Cooler 1 Drive current ITE A Drive voltage VTE V Thermistor resistance Rtherm 1 1 kω 1. Not available on C package. 2. Typical values at 25 C and.6 NA collection optics. 3. Features common to these products include: a. Duty factor of 1%. b. Temperature coefficient of wavelength is approximately.27 to.3 nm/ C. c. Temperature coefficient of threshold current can be modeled as: I TH2 = I TH1 exp [(T 2 T 1)/T ] where T is a device constant of about 16 K. d. Temperature coefficient of operating current is approximately 1% per C. 4. Modulation bandwidth of CW diode lasers is approximately 1 GHz for C package diodes. P package diodes roll off at slightly lower frequencies due to inductance of pins and internal leads. 5. Forward voltage is typically: V f = 1.5 V + I op x R s. 6. The 238 series near field consists of two active segments separated by an isolation space to produce specified aperture.

6 6 Ordering Information For more information on this or other products and their availability, please contact your local JDSU account manager or JDSU directly at JDSU (5378) in North America and JDSU worldwide or via at Sample: 23-2 Chip: 5 µm Stripe ± 3 nm.5 W ± 3 nm.5 W ± 3 nm.5 W Chip: 5 µm Stripe Package Style: TO-3 with TEC and MPD ± 3 nm.5 W ± 3 nm.5 W ± 3 nm.5 W Chip: 1 µm Stripe ± 3 nm 1.2 W ± 3 nm 1.2 W ± 3 nm 1.2 W ± 3 nm 1.2 W ± 3 nm 1.2 W ± 3 nm 1.2 W ± 3 nm 1.2 W ± 3 nm 1.2 W Chip: 1 µm Stripe Package Style: High Heat Load with TEC and MPD ± 3 nm 1.2 W ± 3 nm 1.2 W ± 3 nm 1.2 W ± 3 nm 1.2 W ± 3 nm 1.2 W ± 3 nm 1.2 W ± 3 nm 1.2 W ± 3 nm 1.2 W Chip: 2 µm Stripe ± 3 nm 2. W ± 3 nm 2. W ± 3 nm 2. W ± 3 nm 2. W ± 3 nm 2. W ± 3 nm 2. W ± 3 nm 2. W ± 3 nm 2. W Chip: 2 µm Stripe Package Style: High Heat Load with TEC and MPD ± 3 nm 2. W ± 3 nm 2. W ± 3 nm 2. W ± 3 nm 2. W ± 3 nm 2. W ± 3 nm 2. W ± 3 nm 2. W ± 3 nm 2. W Chip: 5 µm Stripe ± 3 nm 4. W ± 3 nm 4. W ± 3 nm 4. W ± 3 nm 4. W ± 3 nm 4. W ± 3 nm 4. W ± 3 nm 4. W ± 3 nm 4. W Chip: 5 µm Stripe Package Style: High Heat Load with TEC and MPD ± 3 nm 4. W ± 3 nm 4. W ± 3 nm 4. W ± 3 nm 4. W ± 3 nm 4. W ± 3 nm 4. W ± 3 nm 4. W ± 3 nm 4. W

7 User Safety Safety and Operating Considerations The laser light emitted from this diode laser is invisible and may be harmful to the human eye. Avoid looking directly into the diode laser or into the collimated beam along its optical axis when the device is in operation. CAUTION: THE USE OF OPTICAL INSTRUMENTS WITH THIS PRODUCT WILL INCREASE EYE HAZARD. Operating the diode laser outside of its maximum ratings may cause device failure or a safety hazard. Power supplies used with the component must be employed such that the maximum peak optical power cannot be exceeded. CW diode lasers may be damaged by excessive drive current or switching transients. When using power supplies, connect the diode laser with the main power on and the output voltage at zero. The current should be increased slowly while the diode laser output power and the drive current are monitored. Device degradation accelerates with increased temperature, and therefore careful attention to minimize the case temperature is advised. For example, life expectancy will decrease by a factor of four if the case is operated at 5 C rather than 3 C. A proper heatsink for the diode laser on a thermal radiator will greatly enhance laser life. Firmly mount the laser on a radiator with a thermal impedance of less than.5 C/W for increased reliability. ESD PROTECTION Electrostatic discharge is the primary cause of unexpected diode laser failure. Take extreme precaution to prevent ESD. Use wrist straps, grounded work surfaces and rigorous antistatic techniques when handling diode lasers. Labeling 21 CFR 14.1 Compliance Because of the small size of these devices, each of the labels shown is attached to the individual shipping container. They are illustrated here to comply with 21 CFR 14.1 as applicable under the Radiation Control for Health and Safety Act of Serial Number Identification Label JDS Uniphase Corporation S A N J O S E, C A L I F O R N I A U. S. A. MODEL: S/N: MANUFACTURED: WAVELENGTH: I op: This laser product complies with 21 CFR 14 as applicable Package Aperture Labels DANGER INVISIBLE LASER RADIATION IS EMIT- TED AS SHOWN. DANGER INVISIBLE LASER RADIATION IS EMIT- TED AS SHOWN. 311 C Package Diodes 35 P1 Package Diodes Radiation DANGER INVISIBLE LASER RADIATION IS EMIT- TED AS SHOWN. 312 H1 Package Diodes Radiation Output Power Danger Labels DANGER DANGER INVISIBLE LASER RADIATION* INVISIBLE LASER RADIATION* AVOID DIRECT AVOID EYE OR SKIN EXPOSURE TO EXPOSURE TO BEAM DIRECT OR SCATTERED RADIATION GaAlAs Diode 1W Avg** GaAlAs Diode CW 8 W max. CLASS III B LASER PRODUCT CLASS IV LASER PRODUCT *SEE MANUAL **Over a 4 Divergence Angle 337 *SEE MANUAL , 237, 238 All statements, technical information and recommendations related to the products herein are based upon information believed to be reliable or accurate. However, the accuracy or completeness thereof is not guaranteed, and no responsibility is assumed for any inaccuracies. The user assumes all risks and liability whatsoever in connection with the use of a product or its application. JDSU reserves the right to change at any time without notice the design, specifications, function, fit or form of its products described herein, including withdrawal at any time of a product offered for sale herein. JDSU makes no representations that the products herein are free from any intellectual property claims of others. Please contact JDSU for more information. JDSU and the JDSU logo are trademarks of JDS Uniphase Corporation. Other trademarks are the property of their respective holders. 26 JDS Uniphase Corporation. All rights reserved Rev. 4 8/6 23DIODELASER.DS.CL.AE NORTH AMERICA: JDSU (5378) WORLDWIDE: JDSU WEBSITE: