Semiconductor Detectors basic structures
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1 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 1 OUTLINE Part I: Semiconductor Detectors basic structures 1. Semiconductors 2. Basic semiconductor structures (a) the pn diode (b) the MOS structure 3. Semiconductor fabrication: detectors and electronis 4. Simple pn-diode type detectors 5. Applications in high energy physics
2 Semiconductors as detector and electronics material 1. Semiconductors: E Gap 1-3 ev small leakage currents low noise, r.t. 2. Pair creation energy: w = 2 5 ev large number of signal charges per energy deposit in detector 3. Density: ρ = 2-10 g cm -3 high energy loss per unit length low range of δ - electrons This leads to: good energy resolution high spatial resolution high quantum and detection efficieny good mechanical regidity and thermal conductivity Semiconductors equally offer: fixed space charges high mobility of charge carriers Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 2
3 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 3 Semiconductor Physics,crystal stucture Crystal structure of most commonly used semiconductors: Si ; Ge GaAs Diamond lattice Zinc blende lattice Can be considered as two interpenetrating face centered cubic sublattices displaced by one quarter of the diagonal of the cube
4 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 4 Lattice structure Tetahedron bond to closest neighbors Three dimensional arrangement and symbolic two dimensional representation
5 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 5 The silicon lattice Reduce lattice spacing from infinity to lowest potential energy value Bond representation Band representation
6 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 6 Isolators, conductors and in between Band representation for different types of material isolator E gap 5 ev semiconductor E gap 1 ev metal
7 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 7 The silicon lattice n-type p-type Bond picture Band representation
8 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 8 Intrinsic and extrinsic semiconductors Band structure Localized energy levels shown in this figure not present in intrinsic semiconductors Energy Density of Occupation Carrier Band States probability concentration
9 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 9 Carrier transport Drift (acceleration between random collisions) Diffusion Current density (drift and diffusion) Einstein equation Inside magnetic field
10 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 10 Continuity equations Simultaneous consideration of Generation Recombination Drift Diffusion Drift due to electric field derived from Poisson Equation Numerical simulation: simultaneous solution of diffusion and Poisson equation with boundary conditions
11 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 11 Charge carrier generation Thermal generation By photons By charged particles (Bethe-Bloch) Charge multiplication
12 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 12 Recombination Direct and indirect semiconductors Si indirect GaAs direct
13 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 13 Charge carrier lifetimes Generation and recombination through two step processes Characterized by lifetimes Generation and recombination lifetimes are differently defined: Recombination: return to equilibrium in neutral semiconductor (emission and capture processes) Generation: approach to intrinsic carrier density in fully depleted semiconductor (emission processes only)
14 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 14 BASIC STRUCTURES p-n junction Connection between n-type and p-type semiconductor: rectifier Approximation: abrupt change from neutral semiconductor to space charge region
15 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 15 p-n junction Thermal equilibrium Constant Fermi level Drift current equal diffusion current Built in voltage Shallow dopands majority carriers Built in voltage Example: high doped n (1e16) on low doped p(1e12)
16 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 16 p-n junction Application of an exteral voltage Change extent of space charge region Non-equilibrium: Fermi level not defined Drift current not equal diffusion current Diffusion of minority carriers into (out of) space charge region
17 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 17 MOS (Metal-Insulator-Semiconductor) Structure Bond picture (p-type semiconductor) CCD Transistor Basic structure in MOS transistor and in MOS CCDs
18 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 18 Semiconductors as Nuclear Radiation Detectors Outstanding Material Properties small band gap (Si 1.12eV) low e-h pair generation energy (Si 3.6 ev) (ionisation energy for gases 30 ev) High density (Si 2.33 g/cm 2 ) large energy loss/length for ionising particles thin detectors; small range δ- electrons; precise position measurement Almost free movement of electrons and holes Mechanical rigidity; self supporting structure Doping creates fixed space charges; building of sophisticated field structures integration of detector and electronics in single device
19 Detector and electronics simulation and layout Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen The detector idea: simulation of electrical properties 2. Simulationof the production process 3. Design and layout of the entire detetor system, including signal processing and DAQ
20 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 20 Detector and electronics fabrication 4. Fabrication facility at the MPI - HLL from outside and from inside 5. Quality assurance and control 6. Separation, mounting, bonding 7. System test, field test, data analysis and modelling
21 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 21 Diode type detectors C = Aε d rε 0
22 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 22 Structured Diode Strip Detector particle tracking = detection of individual charged particles 1D resolution
23 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 23 Structured Diode Strip Detector particle tracking 2D resolution
24 Strip Detector example ATLAS Silicon CERN LHC application particle tracking strip detector format 6 x 6 cm² x 280 µm single-sided p-strips on n-substrate strips 768 strip pitch 80 µm strip width 20 µm resolution 23 µm rms readout ac-coupled, binary strip capacitance 20 pf/cm coupling 1 pf/cm interstrip ATLAS strip detector, wedge shape, forward ATLAS silicon tracker 55 m² of silicon strip and pixel detectors! Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 24
25 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 25 Silicon strip detectors for position resolution First strip detector: NA11 experiment at CERN (1980): Hadronic charm production Detector detail for the ATLAS SSD (2004)
26 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 26 Strip Detector - Limitation?? ambiguity at high occupancy» 2D pixel sensor
27 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 27 Structured Diode Pad Detector / Pixel Sensor "p on n" 2D resolution particle tracking = detection of individual charged particles imaging = count / integrate particles or photons
28 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 28 Structured Diode Pad Detector / Pixel Sensor "n on n" 2D resolution particle tracking = detection of individual charged particles imaging = count / integrate particles or photons
29 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 29 Hybrid Pixel Sensor 1 preamp per pixel!» front-to-front mounting of detector and readout chip ( bump bonding ) electroplating / reflow solder (PbSn) bumps "lift-off Indium bumps
30 Hybrid Pixel Sensor example 1 SLS / PSI application: imaging, protein crystallography pixel sensor format 36 x 80 mm² x 300 µm 157 x 366 pixels n-pixels on n-substrate pixel size 217 x 217 µm² count rate max sec -1 dynamic range > 10 4 PILATUS detector modules 3 x 5 total area 20 x 24 cm² pixels 0.85 M PILATUS plate Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 30
31 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 31 Diode electronic noise 2kT ENC = α Ctot A1 + 2π a Ctot A2 + qil A3 τ f g τ m thermal noise 1/f noise leakage optimum shaping time τ opt = 2A A 1 3 kt q C 2 tot I L 2 3g m» For good resolution high count rate capability the total capacitance must be minimised!!
32 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 32 Sideward Depletion Structure Emilio Gatti & Pavel Rehak, 1983 symmetric bias fully depleted volume minimum capacitance of bulk contact (independent of sensitive area)
33 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 33 Sideward Depletion Structure Emilio Gatti & Pavel Rehak, 1983 asymmetric bias fully depleted volume minimum capacitance of bulk contact (independent of sensitive area)?? signal extraction??» advanced detector concepts
34 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 34 Silicon Drift Detector (SDD) Emilio Gatti & Pavel Rehak, 1984 drift field surface 1D position resolution by drift time measurement start trigger!!
35 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 35 Drift detector: signal shape (first measurements by Rehak and Holl, 1985) Signal for varying distance for varying drift field 425 V/cm 130 V/cm 265 V/cm 105 V/cm 105 V/cm 210 V/cm 80 V/cm 185 V/cm 67 V/cm Light pulser 22000e 200 ns/div Light pulser 22000e
36 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 36 Silicon Drift Detector (SDD) Emilio Gatti & Pavel Rehak, D position resolution by drift time measurement segmentation of the anode
37 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 37 SDD example 1 STAR 1) RHIC 2) / BNL 3) application particle tracking SDD parameters format 6 x 6 cm² x 280 µm bidirectional drift anodes 2 x 240 anode pitch 250 µm drift voltage V drift time max. 5 µsec resolution 17 µm rms drift 8 µm rms anode STAR detector 3 barrels r = 5, 10, 15 cm SDDs 216 readout channels pixels ) Solenoidal Tracker At RHIC 2) Relativistic Heavy Ion Collider 3) Brookhaven National Laboratory
38 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 38 SDD example 2 CERES CERN SPS application particle tracking AZTEC SDD parameters format Ø = 10 cm x 280 µm central 6 mm hole radial drift field anodes 360 anode pitch 1 drift voltage V drift time max. 6 µsec resolution 16 mrad rms angular < 25 µm rms radial CERES detector 2 SDDs distance to target 10 cm, 13.8 cm
39 Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 39
40 Semiconductor Detectors applications in basic science and industry OUTLINE Part II: 1. Semiconductors based on sideward depletion (a) the SDD with integrated FET (b) the pnccd (c) the CDD (d) the DEPFET (active pixel sensor) 2. Avalanche amplifiers 3. Summary and Conclusion Istanbul, September - 8, 2005 Lothar Strüder MPI Halbleiterlabor, University of Siegen 40
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