Strain-Induced Effects in Advanced MOSFETs

Transcription

1 Computational Microelectronics Strain-Induced Effects in Advanced MOSFETs Bearbeitet von Viktor Sverdlov 1. Auflage Buch. xiv, 252 S. Hardcover ISBN Format (B x L): 0 x 0 cm Gewicht: 629 g Weitere Fachgebiete > Technik > Elektronik > Halb- und Supraleitertechnologie Zu Leseprobe schnell und portofrei erhältlich bei Die Online-Fachbuchhandlung beck-shop.de ist spezialisiert auf Fachbücher, insbesondere Recht, Steuern und Wirtschaft. Im Sortiment finden Sie alle Medien (Bücher, Zeitschriften, CDs, ebooks, etc.) aller Verlage. Ergänzt wird das Programm durch Services wie Neuerscheinungsdienst oder Zusammenstellungen von Büchern zu Sonderpreisen. Der Shop führt mehr als 8 Millionen Produkte.

2 Contents 1 Introduction Scaling, Power Consumption, and Mobility Enhancement Techniques Power Scaling Strain Engineering Global Strain Techniques and Substrate Engineering Local Stress Techniques Advanced Stress Techniques Hybrid Orientation Technology and Alternative Channel Materials. 14 References Strain and Stress Strain Definition Stress Relation Between Strain and Stress Tensor in Silicon and Germanium Strain and Stress Tensors: Examples Uniform All-Around Compression Biaxial Strain Resulting From Epitaxial Growth Uniaxial Stress References Basic Properties of the Silicon Lattice Crystal Structure of Silicon and Germanium Reciprocal Lattice and First Brillouin Zone Particle in a Periodic Potential References Band Structure of Relaxed Silicon Conduction and Valence Bands First-Principle Band Structure Calculations Pseudopotential Band Structure Calculations Semi-Empirical Tight Binding Method ix

3 x Contents 5.5 Comparison Between Different Numerical Methods References Perturbative Methods for Band Structure Calculations in Silicon The kp Method for a Non-Degenerate Band Effective Mass Theory for Non-Degenerate Bands Electron Effective Mass in Relaxed Silicon Approximations for the Conduction Band Dispersion at Higher Energies Valence Band Spin Orbit Coupling in the Valence Band Dispersion of the Valence Band in Silicon Luttinger Parameters References Strain Effects on the Silicon Crystal Structure Strain-Induced Symmetry Reduction of Silicon Crystal Lattice O h Symmetry D 4h Symmetry D 3d Symmetry D 2h Symmetry C 2h Symmetry Internal Strain Parameter Strain and Symmetry of the Brillouin Zone References Strain Effects on the Silicon Band Structure Linear Deformation Potential Theory Conduction Band Valence Band Stress-Induced Band Splitting of the Valence Bands Inclusion of Strain into Perturbative Band Structure Calculations Empirical Pseudopotential Method with Strain References Strain Effects on the Conduction Band of Silicon Limitation of the Effective Mass Approximation for the Conduction Band of Silicon The Two-Band kp Model Valley Shift Due to Shear Strain Stress-Dependent Transversal Effective Masses Dependence on Strain of the Longitudinal EffectiveMass Stress and Non-Parabolicity...115

4 Contents xi Comparison of the Two-Band kp Model with Strain to the Empirical Pseudo-Potential Calculations References Electron Subbands in Silicon in the Effective Mass Approximation Arbitrary Substrate Orientation Substrate Orientation (001) Substrate Orientation (110) Substrate Orientation (111) References Electron Subbands in Thin Silicon Films Numerical Methods for Subband Structure Calculations Linear Combination of Bulk Bands Method Unprimed Subbands in (001) Films: Analytical Consideration Dispersion Relations from an Auxiliary Tight-BindingModel Strain-Induced Valley Splitting Small Strain Values High Values of Shear Strain Numerical Solutions Effective Mass of the Unprimed Subbands Valley Splitting in Magnetic Field and Point Contacts Valley Splitting in Magnetic Fields Valley Splitting in a Point Contact Primed Subbands in Ultra-Thin (001) Silicon Films Effective Mass of Primed Subbands Substrate Orientations Different from (001) Rotation of the Hamiltonian Thin (110) Oriented Silicon Films Appendix Re-Expressing X 1 as a Function of X Expressing the Dispersion Equations in Terms of X 1 X References Demands of Transport Modeling in Advanced MOSFETs TCAD Tools: Technological Motivation and General Outlook Brief History of TCAD Transport Modeling Transport Modeling: Formulation of the Problem Semi-Classical Transport From Drift-Diffusion to Higher Moments Equations Model Verification Mobility in Strained Silicon Mobility and Piezoresistance...183

5 xii Contents Compact Mobility Modeling Monte Carlo Methods for Transport Calculations Mixed Quantum-Semi-Classical Description and QuantumCorrectionsin Current TransportModels Subband Monte Carlo and Degeneracy Effects Simulation Results for Mobilities in Singleand Double-Gate FETs Electron Mobility Enhancement in FETs with Ultra-Thin Silicon Body Stress-Induced Mobility and Drive CurrentEnhancement Quantum Transport Models Ballistic Transport and Tunneling Quantum Transport Models with Scattering Non-Equilibrium Green s Function Method Conclusion and Trends References Author Index Subject Index...251