HEXFET MOSFET TECHNOLOGY. n n n n n n

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1 PD G POWER MOSFET THRU-HOLE (TO-254) Product Summary Part Number RDS(o) ID IRFM Ω -18 IRFM9140 JNTX2N7236 JNTXV2N7236 JNS2N7236 REF:MIL-PRF-19500/ V, P-CHNNEL HEXFET MOSFET TECHNOLOGY HEXFET MOSFET techology is the key to Iteratioal Rectifier s advaced lie of power MOSFET trasistors. The efficiet geometry desig achieves very low o-state resistace combied with high trascoductace. HEXFET trasistors also feature all of the well-established advatages of MOSFETs, such as voltage cotrol, very fast switchig, ease of parallelig ad electrical parameter temperature stability. They are well-suited for applicatios such as switchig power supplies, motor cotrols, iverters, choppers, audio amplifiers, high eergy pulse circuits, ad virtually ay applicatio where high reliability is required. The HEXFET trasistor s totally isolated package elimiates the eed for additioal isolatig material betwee the device ad the heatsik. This improves thermal efficiecy ad reduces drai capacitace. bsolute Maximum Ratigs Features: Parameter VGS = -10V, TC = 25 C Cotiuous Drai Curret -18 VGS = -10V, TC = 100 C Cotiuous Drai Curret -11 IDM Pulsed Drai Curret ➀ -72 TO-254 TC = 25 C Max. Power Dissipatio 125 W Uits Liear Deratig Factor 1.0 W/ C VGS Gate-to-Source Voltage ±20 V ES Sigle Pulse valache Eergy ➁ 500 mj IR valache Curret ➀ -18 ER Repetitive valache Eergy ➀ 12.5 mj dv/dt Peak Diode Recovery dv/dt ➂ -5.5 V/s TJ Operatig Juctio -55 to 150 TSTG Storage Temperature Rage Lead Temperature 300 ( i.(1.6mm) from case for 10s) o C Weight 9.3 (typical) g Simple Drive Requiremets Ease of Parallelig Hermetically Sealed Electrically Isolated Dyamic dv/dt Ratig Light-weight For foototes refer to the last page /22/03

2 Electrical Tj = 25 C (Uless Otherwise Specified) Parameter Mi Typ Max Uits Test Coditios BVDSS Drai-to-Source Breakdow Voltage -100 V VGS = 0V, ID = -1.0m BVDSS/ TJ Temperature Coefficiet of Breakdow V/ C Referece to 25 C, ID = -1.0m Voltage RDS(o) Static Drai-to-Source O-State 0.20 VGS = -10V, ID = -11➃ Ω Resistace 0.22 VGS = -10V, ID = -18 ➃ VGS(th) Gate Threshold Voltage V VDS = VGS, ID = -250µ gfs Forward Trascoductace 6.2 S ( ) VDS > -15V, IDS = -11➃ IDSS Zero Gate Voltage Drai Curret -25 VDS= -80V, VGS= 0V -250 µ VDS = -80V VGS = 0V, TJ = 125 C IGSS Gate-to-Source Leakage Forward -100 VGS = -20V IGSS Gate-to-Source Leakage Reverse 100 VGS =20V Qg Total Gate Charge 60 VGS = -10V, ID= -18 Qgs Gate-to-Source Charge 13 C VDS = -50V Qgd Gate-to-Drai ( Miller ) Charge 35.2 td(o) Tur-O Delay Time 35 VDD = -50V, I D = -11 tr Rise Time 85 RG = 9.1Ω, VGS = -10V s td(off) Tur-Off Delay Time 85 tf Fall Time 65 LS + LD Total Iductace 6.8 H Measured from drai lead (6mm/ 0.25i. from package) to source lead (6mm/0.25i. from package) Ciss Iput Capacitace 1400 VGS = 0V, VDS = -25V Coss Output Capacitace 600 pf f = 1.0MHz Crss Reverse Trasfer Capacitace 200 Ω Source-Drai Diode Ratigs ad Characteristics Parameter Mi Typ Max Uits Test Coditios IS Cotiuous Source Curret (Body Diode) -18 ISM Pulse Source Curret (Body Diode) ➀ -72 VSD Diode Forward Voltage -5.0 V Tj = 25 C, IS = -18, VGS = 0V ➃ trr Reverse Recovery Time 280 S Tj = 25 C, IF = -18, di/dt -100/µs QRR Reverse Recovery Charge 3.6 µc VDD -50V ➃ to Forward Tur-O Time Itrisic tur-o time is egligible. Tur-o speed is substatially cotrolled by LS + LD. Thermal Resistace Parameter Mi Typ Max Uits Test Coditios RthJC Juctio-to-Case 1.0 RthCS Case-to-sik 0.21 C/W RthJ Juctio to mbiet 48 Typical socket mout Note: Correspodig Spice ad Saber models are available o Iteratioal Rectifier Website. For foototes refer to the last page 2

3 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Trasfer Characteristics Fig 4. Normalized O-Resistace Vs. Temperature 3

4 13a & b Fig 5. Typical Capacitace Vs. Drai-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drai Diode Forward Voltage Fig 8. Maximum Safe Operatig rea 4

5 V DS R D R G D.U.T. + - V DD Pulse Width 1 µs Duty Factor 0.1 % Fig 10a. Switchig Time Test Circuit t d(o) t r t d(off) t f 10% Fig 9. Maximum Drai Curret Vs. Case Temperature 90% V DS Fig 10b. Switchig Time Waveforms Fig 11. Maximum Effective Trasiet Thermal Impedace, Juctio-to-Case 5

6 V DS L R G D.U.T V DD -20V tp IS 0.01Ω DRIVER 15V Fig 12a. Uclamped Iductive Test Circuit I S Fig 12c. Maximum valache Eergy Vs. Drai Curret tp V (BR)DSS Fig 12b. Uclamped Iductive Waveforms Curret Regulator Same Type as D.U.T. -10V Q G -10V 12V.2µF 50KΩ.3µF Q GS Q GD D.U.T. V + DS - V G -3m Charge I G I D Curret Samplig Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6

7 Foot Notes: ➀ Repetitive Ratig; Pulse width limited by maximum juctio temperature. ➁ VDD =-25V, startig TJ = 25 C, L = 3.1mH Peak IL = -18, VGS = -10V ➂ ISD -18, di/dt 100/µs, VDD -100V, TJ 150 C ➃ Pulse width 300 µs; Duty Cycle 2% Case Outlie ad Dimesios TO [.149] 3.53 [.139] 6.60 [.260] 6.32 [.249] 0.12 [.005] 1.27 [.050] 1.02 [.040] 3.78 [.149] 3.53 [.139] 6.60 [.260] 6.32 [.249] 0.12 [.005] 1.27 [.050] 1.02 [.040] [.685] [.665] [.800] [.790] B [.895] [.835] [.685] [.665] [.800] [.790] B R 1.52 [.060] C [.685] [.665] 1.14 [.045] 3X 0.89 [.035] 0.84 [.033] MX [.190] 2X 1.14 [.045] 3X 0.89 [.035] 0.36 [.014] B 4.06 [.160] 3.56 [.140] 2X 0.36 [.014] B NOTE S: 1. DIMENSIONING & TOLERNCING PER SME Y14.5M LL DIMENSIONS RE S HOWN IN MILLIMETERS [INCHES ]. 3. CONT ROLLING DIMENSION: INCH. 4. CONFORMS TO JEDEC OUTLINE TO-254. PIN SSIGNMENTS 1 = DRIN 2 = SOURCE 3 = GTE CUTION BERYLLI WRNING PER MIL-PRF Packages cotaiig beryllia shall ot be groud, sadblasted, machied or have other operatios performed o them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall ot be placed i acids that will produce fumes cotaiig beryllium. IR WORLD HEDQURTERS: 233 Kasas St., El Segudo, Califoria 90245, US Tel: (310) IR LEOMINSTER : 205 Crawford St., Leomister, Massachusetts 01453, US Tel: (978) TC Fax: (310) Visit us at for sales cotact iformatio. Data ad specificatios subject to chage without otice. 09/03 7