2013 IEEE International Conference on Electron Devices and Solid- State Circuits (EDSSC 2013)

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1 2013 IEEE International Conference on Electron Devices and Solid- State Circuits (EDSSC 2013) Date Time Venue Tutorial June 2, :30 pm to 4:30 pm Room N002, The Hong Kong Polytechnic University Program at a Glance June 3 (Monday) June 4 (Tuesday) June 5 (Wednesday) T1: T2 T3: W1: W2: W3: Opening Ceremony (8:45 9:15) Graphene & Nanowires Si Nano Devices Power Electronics & Energy Harvesting ESD and Power Devices Novel Circuits Plenary Session (9:15 10:45) Break (10:45-11:00) Break (10:00 10:15) Break (10:00 10:15) Plenary Session (11:00 12:30) T4: High-k & Device Reliability T5 TCAD and Modeling T6: RF Circuits W4: Sensors & MEMS 1 W5: Variability & Reliability Multiscale Modeling W6: First Principles Simulation Lunch (12:30 14:10) Lunch (12:05 14:00) Lunch (12:05 14:00) M1: M2: M3: T7: T8: T9: W7: W8: W9: Flexible & Organic Electronics 1 Memory Technology 1 ESD and RF Circuits Thin Film Transistor Emerging Device Technologies Circuit & System Reliability Sensors & MEMS 2 Analog Circuits Compound & SiGe Devices Break (15:50 16:05) M4: M5: M6: Break (16:00 16:15) T10: Break (15:50 16:05) T11: T12: Flexible & Organic Electronics 2 Power Devices A/D Converters Memory Technology 2 Photonics and Device Technologies Digital Circuits Reception and Poster Session (17:45 20:00) Banquet (18:00 20:00) 1

2 Conference Program Monday Morning - June 3, Registration Venue: Room Z2-001 (Chairs J.J. Liou and C. Surya) Open Ceremony and Plenary Session The Future of Computing is Mobile Nick Yu Qualcomm, USA Revolutionizing Medical Device Design Charles Sodini MIT, USA Break Low Frequency Noise Performance of Gate-First and Replacement Metal Gate CMOS Technologies C. Claeys, J. W. Lee, E. Simoen, A. Veloso, N. Horiguchi and V. Paraschiv IMEC, Belgium InGaAs Nanoelectronics: from THz to CMOS Jesús A. del Alamo MIT, USA Lunch 2

3 Time Monday Afternoon - June 3, 2013 Room Z2-003 Room Z2-035 Room Z2-032 M2: Memory Technology 1 (Chairs: A. Chin and P.T. Lai) M1: Flexible and Organic Electronics 1 (Chairs: M.J. Deen and J.N. Burghartz) (Invited) Flexible Electronics Opportunities and Challenges M. J. Deen McMaster University, Canada GeO 2 /PZT Resistive Random Access Memory Devices with Ni Electrode K.-I. Chou, C.-H. Cheng and A. Chin National Chiao Tung University, Taiwan; National Taiwan Normal University, Taiwan Improved Performance of Hf-Doped BaTiO 3 as Charge-Trapping Layer for Flash Memory Applications (Invited) Ultra-Thin Chips for Flexible Electronics J. N. Burghartz, E. Angelopoulos, W. Appel, S. Endler, S. Ferwana, C. Harendt, M. Hassan, H. Rempp, H. Richter and M. Zimmermann IMS CHIPS, Germany Current Uniformity Improvement in Flexible Resistive Memory Z.-W. Zheng, C.-H. Cheng, K.-I. Chou, M. Liu and A. Chin Chinese Academy of Sciences, Beijing, ; National Taiwan Normal University, Taipei, Taiwan; National Chiao Tung University, Hsinchu, Taiwan Process Variability Influence on Complementary Organic Circuits Characteristics M. Guerin, E. Bergeret, E. Bènevent, P. Pannier, A. Daami, R. Coppard IM2NP, France; CEA-Grenoble, France X. D. Huang and P. T. Lai The University of Hong Kong, Hong Kong RTN Analysis with FHMM as a Tool for Multi-Trap Characterization in HfO x RRAM F. M. Puglisi and P. Pavan Università degli Studi di Modena e Reggio Emilia, Italy Characterization of FinFET SRAM Cells with Asymmetrically Gate Underlapped Bitline Access Transistors under Process Parameter Fluctuations S. M. Salahuddin, H. Jiao, and V. Kursun The Hong Kong University of Science and Technology, Hong Kong Field Effect Diode Memory Cell: Physics and Design A. Z. Badwan, Z. C., Y. Yang, Q. Li, D. E. Ioannou and A. A. Salman George Mason University, USA; Texas Instruments Incorporated, USA Break M3: ESD and RF Circuits (Chairs: M.-D. Ker and W.-K. Yeh) (Invited) On-Chip ESD Protection Designs in RF Integrated Circuits for Radio and Wireless Applications M.-D. Ker and C.-Y. Lin National Chiao-Tung University, Taiwan (Invited) Concurrent Design of Wideband RFIC and ESD X. Wang, B. Zhao, L. Wang, R. Ma, Z. Dong, C. Zhang and A. Wang Fairchild Semiconductor,USA; University of California,USA SCR Device for On-Chip ESD Protection in RF Power Amplifier C.-Y. Lin and M.-D. Ker National Chiao Tung University, Taiwan TLP and HBM ESD Test Correlation for Power ICs R. Ma, L. Wang, C. Zhang, F. Lu, Z. Dong, A. Wang, W. Lu and Y. Song and B. Zhao University of California,USA; Marvell Semiconductor, USA Fairchild Semiconductor, USA 3

4 Time Monday Afternoon - June 3, 2013 Room Z2-003 Room Z2-035 Room Z2-032 M5: Power Devices M6: A/D Converters (Chairs: M. Ostling and E. Sangiorgi) (Chairs: K. N. Leung) M4: Flexible and Organic Electronics 2 (Chairs: M. J. Deen and J. N. Burghartz) Flexible InGaZnO TFTs with Stacked GeO 2 /TiO 2 Gate Dielectrics H.-H. Hsu, C.-Y. Chang, C.-H. Cheng, S.-H. Yu and C.-Y. Su National Chiao Tung University, Taiwan; National Taiwan Normal University, Taiwan; Chang Gung University, Tao-Yuan, Taiwan Room-Temperature Fabrication of Flexible Gallium-Doped Zinc Oxide Thin-Film Transistors on Plastic Substrates F. Huang, D. Han, D. Shan, Y. Tian, S. Zhang, Y. Cong, Y. Wang, L. Liu, X. Zhang and S. Zhang A Study on the Electrical Characteristics of Copper Phthalocyanine-Based OTFTs with ZrTaO as Gate Dielectric W. M. Tang, M. G. Helander, M. T. Greiner, J. Qiu, Z. H. Lu and W. T. Ng University of Toronto,Canada; The Hong Kong Polytechnic University, Hong Kong Laser Patterned Junctionless Neuron Thin-Films Transistor Arrays L. Q. Zhu and Q. Wan Chinese Academy of Sciences, (Invited) SiC Device Technology for Energy Efficiency and High Temperature Operation M. Ostling KTH Royal Institute of Technology, Sweden (Invited) TCAD Numerical Simulation of Metal Wrap through Solar Cell P. Magnone, C. Fiegna, E. Sangiorgi, D. Tonini and M. Frei University of Bologna and IUNET Cesena (FC), Italy; Applied Materials, Italy and USA Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs M. Weiß, A. K. Sahoo, C. Raya, M. Santorelli, S. Fregonese, C. Maneux and T. Zimmer Université de Bordeaux, France; XMOD Technologies, France All GaN-on-Si High Power Module Design and Performance Evaluation S. Cheng, C.-A. Wang, P.-C. Chou, W.- H. Chieng, and E. Y. Chang National Chiao-Tung University, Taiwan A 16-bit 1MHz 44mW SAR ADC Achieving Signal-to-Noise-and- Distortion-Ratio of 94.3dB Y. Y. Chi, D. M. Li and Z. H. Wang Tsinghua University, A 1.2V Power Adaptable 95-to- 67dB DR 2-2 Mash Delta-Sigma ADC with Configurable OSR H. J. Wu, B. Li, H. B. Zhang, L. L. Zou, L. Y. Zeng and Z. P. Li South University of Technology, ; Guangzhou Runxin Information and Technology Co., Ltd., A Compact Low-Power Flash ADC Using Auto-Zeroing with Capacitor Averaging C.-C. Lee, C.-M. Yang and T.-H. Kuo National Cheng Kung University, Taiwan A 6-bit Subranging ADC with Single CDAC Interpolation H. Lee, M. Miyahara and A. Matsuzawa Tokyo Institute of Technology, Japan Reception and Poster Session 4

5 Time Tuesday Morning - June 4, 2013 Room Z2-003 Room Z2-035 Room Z2-032 T2: Silicon Nano Devices T3: Power Electronics and Energy (Chairs: R. Huang and M. Chan) Harvesting (Chairs: H. Lee and P. K. T. Mok) T1: Graphene and Nanowires (Chairs: H.-S. P. Wong and V. K. Arora) (Invited) High-Field Transport in Graphene and Carbon Nanotubes V. K. Arora and M. L. P. Tan Universiti Teknologi, Malaysia; Wilkes University, USA (Invited) Novel Graphene-Based Devices H. Tian, Y. Yang, D. Xie, H.- Y. Chen, H.-S. Philip Wong and T.-L. Ren Tsinghua University, ; Stanford University,USA The Electronic Properties of Ultra-Narrow Armchair MoS 2 Nanoribbons Z. Xin, L. Zeng, Z. Lu, Y. Hou, L. Liu, J. Kang, G. Du and X. Liu ; Peking University Shenzhen Graduate School, Modeling for Contact Resistance between Metallic Carbon Nanotubes and Semiconducting Substrates of Field Emission Devices L. Liu and B. Li South University of Technology, Break (Invited) Novel Silicon-Based Tunneling FET with Junction Engineering and Gate Configuration for Low Power Applications R. Huang, Q. Huang, Z. Zhan, C. Wu, Y. Qiu and Y. Wang Vertical Nanowire MOSFET Parasitic Resistance Modeling S. Maheshwaram, S. K. Manhas, G. Kaushal and B. Anand Indian Institute of Technology Roorkee, India High Performance Topological Insulator Nanowire Field-Effect Transistors Q. Li, H. Zhu, E. Zhao, H. Yuan, Dimitris E. Ioannou, Curt A. Richter, H. Li and O. Kirillov George Mason University, United States; National Institute of Standards and Technology, USA Investigation of Ultra-Thin BOX Junctionless Transistor at Channel Length of 20 nm C. Sahu, J. Singh and P. N. Kondekar IIITDM, India Break (Invited) Power- & Area-Efficiency Enhancement Techniques of Switched-Capacitor Power Converters for Low-Power Applications H. Lee and Z. Hua University of Texas at Dallas, United States A Low-Voltage High-Efficiency Voltage Doubler for Thermoelectric Energy Harvesting J. Kim, P. K. T. Mok, C. Kim and Y. K. Teh The Hong Kong University of Science and Technology,Hong Kong; Korea University,Korea A 99%-Efficiency 1-MHz 1.6-kW Zero-Voltage-Switching Boost Converter Using Normally-off GaN Power Transistors and Adaptive Dead-Time Controlled Gate Drivers J. Xue, K. D. T. Ngo and H. Lee University of Texas at Dallas, USA; Virginia Tech., USA Design of Coupled Inductor- Based Boost Converter for Ultra Low Power Thermoelectric Energy Harvesting using Pulse Transformer with 75mV Start-up Voltage Y.-K. Teh and P. K. T. Mok The Hong Kong University of Science and Technology, Hong Kong 5

6 Time Tuesday Morning - June 4, 2013 Room Z2-003 Room Z2-035 Room Z2-032 T5: TCAD and Modeling (Chairs: S. Selberherr and P. K. T. Mok) T4: High-k Dielectrics and Device Reliability (Chairs: K. L. Pey and J. Molina) (Invited) Impact of Local Variations in High-k Dielectric on Breakdown and Recovery Characteristics of Advanced Gate Stacks K. L. Pey, K. Shubhakar, N. Raghavan, X. Wu and M. Bosman Singapore University of Technology and Design, Singapore; Nanyang Technological University, Singapore; Institute of Materials Research and Engg., Singapore Evaluation of Interface-States Density for MOSFETs Fabricated on High-Index (114) Silicon Surfaces J. Molina, C. Zuniga, W. Calleja, A. Torres, P. Rosales, E. Gutierrez and Don. L. Kendall INAOE, Mexico; StarMega Corp., USA High-Quality HfSiON Gate Dielectric and its Application in a Gate-Last NMOSFET Fabrication G. Xu, Q. Xu, H. Yin, H. Zhou, T. Yang, J. Niu, L. Meng, X. He, G. Wang, J. Yu, D. Wang, J. Li, J. Yan, C. Zhao and D. Chen Chinese Academy of Sciences, Low Frequency Drain Noise Characteristics of Polarization- Engineered AlGaN/GaN HFETs F. Manouchehri, P. Valizadeh and M. Z. Kabir Concordia University, Canada The Recovery Effect of Hot- Carrier Degradation under Dynamic Stress Condition for SOI-nLDMOS Device C. Zhang, S. Liu, W. Sun, W. Su, Y. Liu, G. Chen and X. He Southeast University, ; CSMC Technologies Corporation, (Invited) Physically Based Models of Electromigration R. L. de Orio and S. Selberherr Institute for Microelectronics, Austria Numerical Study on Nanowire Tunnel FET with Dynamic Threshold Operation Architecture A. Zhang, J. He, X. Zhu, Y. Hu, H. Wang, W. Deng, H. He, Y. Zhu, X. Zhang, M. Chan PKU-HKUST Shenzhen-Hong Kong Institution, ; Hong Kong University of Science and Technology, Hong Kong Compact Model and Projection of Silicon Nanowire Tunneling Transistors (NW-tFETs) Q. Shao, C. Zhao, C. Wu, J. Zhang, L. Zhang and Z. Yu Tsinghua University, Simulation of Trap State Effects in GaN DHFETs on Buffer Leakage Current and Breakdown Voltage J. Du, K. Ma, Z. Zhao and Q. Yu University of Electronic Science and Technology of, A Physical Surface Potential Model of a-igzo TFTs X. Li, B. Li and R. Yao South University of Technology, Lunch T6: RF Circuits (Chairs: J. C.S. Woo and P. Pong) (Invited) Design of Sub-100nm SOI CMOS for RF Switch Application A. Sajjadi and J. C. S. Woo UCLA, USA 2-GHz Band Ultra-Low-Voltage LC-VCO IC in 130nm CMOS Technology X. Yang, K. Xu, W. Wang, Y. Uchida and T. Yoshimasu Waseda University, Japan Cascaded Optical Band Pass Filters in Radio-over-Fiber Link D. B. Chen, C.-K. Sun and P. K. L. Yu University of California at San Diego, USA; Titan Photonics, USA Design of CMOS Differential LNA at 2.4GHz M. Muhamad, N. Soin, H. Ramiah, N. M. Noh and W. K. Chong Universityi Teknologi MARA, Shah Alam; University of Malaya; Universiti Sains Malaysia A Dual-Mode Second Order Sigma-Delta Modulator Employing Single Opamp for GSM and WCDMA Applications Gh. Fahmy, D. Kanemoto, H. Kanaya, R. Pokharel and K. Yoshida Graduate School of Information Science and Electrical Engineering; EJUST Center; Kyushu University, Japan 6

7 Time Tuesday Afternoon - June 4, 2013 Room Z2-003 Room Z2-035 Room Z2-032 T8: Emerging Device Technologies T9: Circuit and System (Chairs: H.-S. Wong and T. K. Reliability (Chair: K. N. Leung) Chiang) T7: Thin Film Transistors (Chairs: V. R. Rao and J.-J. Huang) (Invited) A TFT Embedded Cantilever (CantiFET) Platform for Sensor Applications P. Ray, V. Seena and V. R. Rao Indian Institute of Technology, India (Invited) Small Low-Frequency Noise IGZO TFTs Using a Bilayer HfO 2 /SiO 2 Dielectric and the Applications of IGZO TFTs to biosensors L.-Y. Su, H.-Y. Lin, H.-K. Lin and J.-J. Huang Graduate Institute of Photonics and Optoelectronics, Taiwan; National Taiwan University, Taiwan Influence of Ar/O 2 Ratio during IGZO Deposition on the Electrical Characteristics of a- IGZO TFT with HfLaO Gate Dielectric L. X. Qian and P. T. Lai The University of Hong Kong, Hong Kong (Invited) Compact Models of Emerging Devices C.-S. Lee, S. Yu, X. Guan, J. Luo, L. Wei*, H.-S. Philip Wong Stanford University,USA;Massachusetts Institute of Technology,USA A Simple Scaling Theory for Fully- Depleted Multiple-Gate MOSFETs: with DIBL Resistance Included T. K. Chiang, H. W. Chang and G. W. Liou National University of Kaohsiung, Taiwan Realization of High Efficiency 4H- SiC IMPATT Diode Using Optimized Doping Steps G. N. Dash, J. Pradhan, S. K. Swain and S. R. Pattanaik Sambalpur University, India; Apex Institute of Technology and Management, India A Simple Leakage Current Model for Polycrystalline Silicon Nanowire Thin-Film Transistors H. He, J. He, W. Deng, H. Wang, Y. Hu, X. Zhu, X. Zheng PKU-HKUST Shenzhen-Hong Kong Institution, ; Peking University, ; Hong Kon guniversityy of Science and Technology, Hong Kong; South University of Technology, (Invited) Sound Monitoring Based Wireless Healthcare and a Typical Implementation for Heart Rate Monitoring Z. Wang, K. Yang, W. Wang, H. Jiang, S. Wu, Q. Lin and W. Jia Tsinghua University, ; Research Institute of Tsinghua University in Shenzhen, Data Retention Time of a New Composed Cell for Dynamic Random Access Memory Y. Riho and K. Nakazato Nagoya University, Japan A Ring Oscillator Based Reliability Structure for NBTI & PBTI Measurement X. Wang, J. Hong, Y. He, G. Zhang, L. Han and X. Zhang A Combined Countermeasure against DPA and Implementation on DES R. Li, X. X. Cui, W. Wei, D. Wu, K. Liao, N. Liao, K. S. Ma, D. Yu and X. Cui A Low Operating Voltage IGZO TFT Using LaLuO 3 Gate Dielectric K.-I. Chou, H.-H. Hsu, C.-H. Cheng, K.-Y. Lee, S.-R. Li and A. Chin National Chiao Tung University, Taiwan; National Taiwan Normal University, Taiwan Fabrication and Characteristics of Fully Transparent Aluminum- Doped Zinc Oxide Thin-Film Transistors D. Shan, D. Han, F. Huang, Y. Tian, S. Zhang, Y. Cong, Y. Wang, L. Liu, X. Zhang and S. Zhang ; Shenzhen Graduate School Peking University, Break Characteristics of Submicron- Footprint TiO 2 Based AlGaN/GaN MOSHEMT on SiC Substrate D. Meng, S. Lin, P. W. Cheng, M. Wang, J. Wang, Y. Hao, Y. Zhang, K. M. Lau and W. Wu ; Chinese Academy of Sciences, ; Hong Kong University of Science and Technology, Hong Kong Break Test Pattern Generation for Static Burn-in Based on Equivalent Fault Model X. Cui, Z. Qian, X. Shi and C.-L. Lee Peking University Shenzhen Graduate School, 7

8 Tuesday Afternoon - June 4, 2013 Room Z2-003 Room Z2-035 Room Z2-032 Time T10: Memory Technology 2 T11: Photonics and Device T12: Digital Circuits (Chair: J. Molina) Technologies (Chair: H. P. Ho) (Chair: K. P. Pun) Study of Porous Silicon Substrate for the Integration of Radio Frequency Monolithic Circuits M. Capelle, J. Billoué, G. Gautier,and P. Poveda Université François Rabelais, France; STMicroelectronics, France Self-Compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices Y. Hou, B. Chen, B. Gao, Z. Y. Lun, Z. Xin, R. Liu, L. F. Liu, D. D. Han, Y. Wang, X. Y. Liu and J. F. Kang Effect of Oxygen Profiles on the RS Characteristics of Bilayer TaO x /TaO y Based RRAM X. Li, H. Wu, M. Wu, N. Deng and H. Qian Tsinghua University, Ultra-Low RESET Current RRAM Device by Side-RESET Operation Method H. Sun, H. Lv, Q. Liu, S. Long, M. Wang, H. Xie, X. Liu, X. Yang, J. Niu and M. Liu Institute of Microelectronics of Chinese Academy of Science, Integrated CMOS Photodetectors for Short Range Optical Communication Z. Hou, Q. Pan, Y. Li, S. Feng, A. W. Poon and C. P. Yue The Hong Kong University of Science and Technology, Hong Kong High UV-Visible Rejection Ratio of Dual-Wavelength Detecting MISIM UV Sensor with a Thin Al 2 O 3 Layer C.-J. Lee, H.-G. Cha, C.-H. Won, J.-H. Lee and S.-H. Hahm Kyungpook National University, Korea A CMOS Time-to-Digital Converter for Multi-Voltage Threshold Method in Positron Emission Tomography Y. Li, H. Yu, L. Jiang, Z. Ji, J. Zhu, M. Niu and P. Xiao Shenzhen University, ; Huazhong University of Science and Technology, Design a Fast CAM-Based Information Detection System on FPGA and 0.18um ASIC Technology D.-H. Le, K. Inoue and C.-K. Pham The University of Electro- Communications Tokyo, Japan; Advanced Original Technologies, Japan A Multi-Band Fully Differential Fractional-N PLL for Wideband Reconfigurable Wireless Communication X. Liu, W. Lou, L. Liu and N. Wu Chinese Academy of Sciences, Temperature-Dependent Study of A Novel Design of Super- Gate-Lag and RDS-Dispersion of Capacitor Based on Black Silicon Island-, Fin-, and Mesa-Isolated with Atomic Layer Deposition AlGaN/GaN HFETs L. Zhang, D. Zhao, J. He, X. Md J. Sikder, A. Loghmany and P. Huang, F. Yang and D. Zhang Valizadeh Concordia University, Canada Strain Effects on Valence Band Structure of In 0.7 Ga 0.3 As: From Bulk to Thin Film P. Chang, X. Liu, L. Zeng, J. Qin and G. Du A Low-Spurious Low-Power 12- bit 300MS/s DAC with 0.1mm 2 in 0.18um CMOS Process Wei-Te Lin and Tai-Haur Kuo National Cheng Kung University, Taiwan Banquet 8

9 Time Wednesday Morning - June 5, 2013 Room Z2-003 Room Z2-032 Room Z2-035 W2: Novel Circuits W3: AOE Special Session 1 (Chairs: E. Leelarasmee and K. N. Multiscale Modeling Leung) (Chair: M. Chan) W1: ESD and Power Devices (Chairs: Z. Liu and P. K. T. Mok) (Invited) Evaluation of Electrostatic Discharge (ESD) Characteristics for Bottom Contact Organic Thin Film Transistor Z. Liu, A. Dong, Z. Ji, L. Wang, L. He, W. Liang, J. Miao and J. J. Liou University of Electronic Science and Technology of,; Institute of Microelectronics of Chinese Academy of Sciences, ; University of Central Florida, USA Device Variability and Reliability Check for Ultra-Thin-Body and Bulk Oxide CMOSFETs W.-K. Yeh, C.-M. Lai, L.-K. Chin and P.-Y. Chen National University of Kaohsiung, Taiwan; I-Shou University, Taiwan A Novel ESD Self-Protecting Symmetric nldmos for 60V SOI BCD Process Y. Wang, G. Lu, J. Cao, Q. Liu, G. Zhang and X. Zhang (Invited) Circuits for Data Communication through DC Power Line in Solar Farm P. Sirinamaratana and E. Leelarasmee Chulalongkorn University, Thailand Backside Silicon-Embedded Inductor Using Magnetic Layer for Shielding and Inductance Enhancement R. Wu, W. Li, Y. Ren, H. Luo and G. Zhang University of Electronic Science and Technology of, A 116-dB CMOS Op Amp with Repetitive Gain Boosting and Subthreshold Operation S. Bu and K. N. Leung The Chinese University of Hong Kong, Hong Kong A Nano-Power Switched-Capacitor Voltage Reference Using Body Effect in MOSFETs for Application in Subthreshold LSI H. Zhang, M. Huang, Y. Zhang, X. Li and T. Yoshihara Waseda University, Japan 120V Superjunction LDMOS Transistor S. K. Panigrahi, U. Gogineni, M. S. Baghini and F. Iravani Indian Institute of Technology, Maxim Integrated Circuits, India; Maxim Integrated Products Inc., USA Break A Multi-Scale Framework for Nano-electronic Devices Modeling with Application to the Junctionless Transistor J. Peng, Q. Chen, N. Wong, L. Y. Meng, C. Y. Yam and G. H. Chen The University of Hong Kong, Hong Kong Full-Quantum Simulation of p- Type Junctionless Transistors with Multi-band k.p Model J. Z. Huang, W. C. Chew, L. J. Jiang, J. Peng, C.-Y. Yam and G.-H. Chen The University of Hong Kong, Hong Kong Recent Development of Surface Integral Equation Solvers for Multiscale Interconnects and Circuits S. Sun, L. J. Jiang, W. C. Chew The University of Hong Kong, Hong Kong; University of Illinois at Urbana-Champaign, USA Modeling of an Inductive Link for Wireless Power Applications S. Raju, M. Chan and C. P. Yue The Hong Kong University of Science & Technology, Hong Kong 9

10 Time Wednesday Morning - June 5, 2013 Room Z2-003 Room Z2-032 Room Z2-035 W4: Sensors and MEMS 1 (Chairs: C. S. Lai and T. L. Ren) W5: Variability and Reliability (Chairs: S. S. Chung and P. T. Lai) W6: AOE Special Session 2 First Principles Simulation (Invited) Sensitivity Enhancement of Ion Sensors by Charge Trapping on Extended Gate Field Effect Transistors K. I. Ho, C. H. Chen, C. F. Lu, C.-S Lai, C. Chang, A. Cho, J.-J. Chang and M. F. Chiang Chang Gung University,Taiwan; AU Optronics Corporation, Taiwan Integration of Diamond-Like Carbon and AlN for Acoustic Wave Devices C. Zhou, Y. Yang, H. Cai, H. Jin, B. Feng, S. Dong, M. Chan, T.-L. Ren Tsinghua University, ; Hong Kong University of Science and Technology, Hong Kong; Zhejiang University, A Novel Hydrogen Sensor Based on Pt/WO 3 /Si MIS Schottky Diode Y. Liu, J. Yu, F. X. Cai, W. M. Tang and P. T. Lai The University of Hong Kong, Hong Kong; The Hong Kong Polytechnic University, Hong Kong Ionic/electronic Hybrid Transistor for Mimicking Forgetting Curves C. Wan and Q. Wan Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, (Invited) The Process and Stress- Induced Variability Issues of Trigate CMOS Devices S. S. Chung National Chiao Tung University, Taiwan Numerical Study on Effects of Random Dopant Fluctuation in Double Gate Tunneling FET Y. Zhu, Y. Ye, Y. Cao, J. He, A. Zhang, H. He, H. Wang, C. Ma, Y. Hu, M. Chan and X. Zhu Peking University Shenzhen SOC Key Laboratory, PKU-HKUST Shenzhen- Hong Kong Institution,; Arizona State University,USA; Hong Kong University Science and Technology, Hong Kong Resistive Switching Variability Study on 1T1R AlOx/WOx-Based RRAM Array B. Jiao, N. Deng, J. Yu, Y. Bai, M. Wu, Y. Zhang, H. Qian and H. Wu Tsinghua University, Effects of Fluorine Plasma and Ammonia Annealing on Pentacene Thin-Film Transistor with HfTiO as Gate Dielectric C. Y. Han, C. H. Leung, P. T. Lai, W. M. Tang and C. M. Che The University of Hong Kong, Hong Kong; The Hong Kong Polytechnic University, Hong Kong Analytical Model for an Extended Field Plate Effect on Trench LDMOS with High-k Permittivity X. Hu, B. Zhang, X. Luo, Y. Jiang, K. Zhou and Z. Li University of Electronic Science and Technology of, An Ultra-Low Power CMOS Smart Temperature Sensor for Clinical Temperature Monitoring T. Wu, M.-K. Law, P.-I. Mak and R. P. Martins University of Macau, Macau; Instituto Superior Técnico (IST) / TU of Lisbon, Portugal Lunch (Chair: M. Chan) First-principles Investigation of Transient Current of Molecular Devices by using Complex Absorbing Potential L. Zhang, J. Chen and J. Wang The University of Hong Kong, Hong Kong First Principle Simulations of the [110] Uniaxial Strain Effects in Electron Transport L. Zhang, F. Zahid, H. Guo and M. Chan The Hong Kong University of Science and Technology, Hong Kong; The University of Hong Kong, Hong Kong; McGill University, Canada Band Offsets of Al x Ga 1-x As/GaAs Heterojunction from Atomistic First Principles Y. Wang, F. Zahid, Y. Zhu, L. Liu, J. Wang and H. Guo The University of Hong Kong, Hong Kong; Nanoacademic Technologies, Canada; McGill University, Canada Spin Transfer Torque in Magnetic Nanostructures Y. Zhou, J. Xiao, G. E. W. Bauer and F.-C. Zhang The University of Hong Kong, Hong Kong; Fudan University, ; Tohoku University, Japan; Delft University of Technology, The Netherlands Strain Modeling in Source Exhaustion Regime of Carbon Nanotube Field Effect Transistor Z. Ahmed and M. Chan Hong Kong University of Science of Technology, Hong Kong 10

11 Time Wednesday Afternoon - June 5, 2013 Room Z2-003 Room Z2-032 Room Z2-035 W7: Sensors & MEMS 2 (Chairs: C. S. Lai and T. L. Ren) W8:Analog Circuits (Chairs: W. T. Ng and K. P. Pun) W9: Compound and SiGe Devices (Chairs: X. Zhou and H. Wong) High Responsivity Impact of Parasitic Elements on RF Phototransistor with Body- Performance of Nanometre-Scale Strapped Base in Standard SiGe MOSFET Structures BiCMOS Technology S. Lam Klaus Y. J. Hsu and Brett W. C. Xi'an Jiaotong-Liverpool University, Liao National Tsing Hua University, Taiwan SAW Based Mass-Loading Biosensor for DNA Detection H. Cai, C. Zhou, Y. Zhang, Y. Yang, T. Ren, C. Guo and J. Liu Tsinghua University, Optimal Design of High- Sensitivity Pressure Sensor with Peninsula-Structured Diaphragm X. Huang, D. Zhao, J. He, F. Yang and D. Zhang An Adaptive Feedback for Implantable Wireless Power Transmission System X. W. Chen, Z. H. Wu, M. J. Zhao and B. Li South University of Technology, Split-Output Miller Compensated Two-Stage Amplifiers M. Tan and W.-H. Ki (Invited) A Scalable Compact Model for Generic HEMTs in III- V/Si Co-Integrated Hybrid Design X. Zhou, J. B. Zhang, B. Syamal, Z. M. Zhu and L. Yuan Nanyang Technology University, Singapore; Institute of Microelectronics Agency for Science, Technology and Research (A*STAR), Singapore The Reliability of SiGe HBT under Swift Heavy Ion Irradiation Y. Sun, J. Fu, J. Xu, Y. Wang, W. Zhou, W. Zhang, J. Cui, G. Li and Z. Liu Tsinghua University, The Hong Kong University of Science Fabrication of Strained and Technology, Hong Kong A Feedback-Voltage-Sensing Translator for Floating Buck DC-DC Converter Z. Ning, L. He, Z. Hu, G. Jin and W. T. Ng Zhejiang University, ; University of Toronto, Toronto, Canada High-Gain Amplifier with N-Type Transistors P. Bahubalindruni, V. G. Tavares, P. G. de Oliveira, P. Barquinha, R. Martins and E. Fortunato University of Porto, Portugal; Universidade Nova de Lisboa and CEMOP-UNINOVA, Portugal Si 0.55 Ge 0.45 Channel PMOSFETs Directly on a Si Substrate T. Zhao, R. Liang, Z. Tan, J. Wang and J. Xu Tsinghua University, Nickel Germanide with Rare Earth Interlayers for Ge CMOS Applications R. K. Mishra, U. Ganguly, S. Ganguly, S. Lodha, A. Nainani and M. C. Abraham Indian Institute of Technology, India; Applied Materials Inc, USA 11

12 Poster Session June 3,Monday (17:45 20:00) Venue: Room Z2-002,Z2-032,Z2-034 and Z2-036 Session Chairs: V. Filip, City Univeristy of Hong Kong; B. Li, South University of Technology, P1: Capacitive Dynamic Comparator with Low Kickback Noise for Pipeline ADC K. C. Kuo and C. W. Wu National Sun Yat sen University, Taiwan P2: A Low Phase Noise VCO for 5 GHz WiMAX/WLAN Frequency Synthesizer K. C. Kuo and C. W. Wu National Sun Yat sen University, Taiwan P3: Circuit Model of Quantum Cascade Lasers for Simulation of Influence of Doping Density C. Qi, X. Shi, S. Ye and J. Jiang Wuhan University, P5: Circuit Level Thermal Model of Intermediate Infrared Quantum Cascade Lasers C. Qi, X. Xia, X. Shi, S. Ye and J. Jiang Wuhan University, P6: A 70uW/MHz Ultra Low Voltage Microcontroller SPARK W. X. Tang, S. W. Tung, S. A. Wen and K. Y. Lin Industry Institute Research Center, Taiwan P7: Ramp Based Soft Start Circuit with Soft Recovery for DC DC Buck Converters B. Yuan, X. Lai, Q. Ye, H. Wang and Y. Li Institute of Electronic CAD, Xidian University, P8: A 10 Bit Low Power Differential Successive Approximation ADC for Implantable Biomedical Application D. Q. Zhao, Z. H. Wu and B. Li South University of Technology, P10: Suppressing Band to Band Tunneling Leakage and Short Channel Effects in GeOI pmosfets G. C. Patil and S. Qureshi Indian Institute of Technology Kanpur, India P11: A 1.2V 84dB 8mW Time Interleaved Sample and Hold Circuit in 90nm CMOS A. Zjajo Delft University of Technology, Netherlands P12: Recursive Least Squares Adaptive Digital Background Calibration of Analog to Digital Converters C. S. Lin, Z. H. Wu, B. Li and H. J. Wu South University of Technology, P13: Multi Frequency Test for Analog Circuits C. Wang, Y. Ye, H. l. Liang, J. He and M. Chan 12

13 P14: A GHz LC VCO with Low Phase Noise S. L. Gan, Y. Wang, J. Cao, S. Jia and X. Zhang P15: Digital Background Calibration for Pipelined SAR ADC Based on LMS Algorithm Q. Lei, Z. Wu, B. Li and H. Wu South University of Technology, P16: Digital Background Calibration for a 14 Bit 100 MS/s Pipelined ADC Using Signal Dependent Dithering Z. X. Xiong, M. Cai and X. Y. He South University of Technology, P17: An All Digital CMOS WDMA UWB Transmitter with 10pJ/pulse 200Mbit/s T. J. Liang, M. J. Zhao, Z. H. Wu and B. Li South University of Technology, P18: Device for the Measurement of Anchor Torsional Strength in MEMS Devices J. He, D. Zhao, X. Huang, C. Lin, F. Yang and D. Zhang Institute of Microelectronics, P19: Design of Power Rail ESD Clamp Circuit with Separate Detection and Delay Component against Mis triggering Q. Liu, Y. Wang, J. Cao, G. Lu and X. Zhang P20: A High Self Resonant and Quality Factor Transformer Using Novel Geometry for Silicon Based RFICs H. B. Zhang, M. Cai, X. Y. He, G. H. Chen and H. J. Wu South University of Technology, P21: A New Low Power CMOS Dynamic Logic Circuit S. Jia, S. Lyu, Q. Meng, F. Wu and H. Xu P22: Uniformity Improvement of Al doped HfO2 Resistive Switching Memory Devices Using a Novel Diffusion Approach W. Zhang, D. Yu, F. Zhang, R. Liu, B. Chen, L. Liu, D. Han and J. Kang, P23: A New Method on Cu Stress Measurement by Bandgap Voltage Reference Circuit C. L. Tan, C. K. Tan, T. Govindasamy and C. S. Cheng INFINEON, Malaysia P24: A 6.25 Gbps 4 Tap Low Power Decision Feedback Equalizer in 0.13um CMOS Technology X. Zhang, Y. Wang, J. Cao, S. Jia, G. Zhang and X. Zhang P25: Investigation of Substrate Resistance and Inductance on Deep Trench Capacitor for RF Application V. Kumar, A. Aminulloh, S. M. Yang and G. Sheu Asia University, Taiwan 13

14 P26: A Novel PLL Based Phase Control Technique in the Digitalized Closed Loop Gyroscope Interface Circuit T. Tao, W. Lu, R. Fang, G. Shen, S. Yang, Y. Zhang, Z. Chen and G. Yan P27: A Low Power, Auto Zeroed Comparator for Column Paralleled 14b SAR ADCs of 384x288 IRFPA ROIC M. Chen, W. Lu, T. Tao, Y. Zhang and Z. Chen P28: A Fast Frequency Acquisition Phase Locked Loop Using Phase Compensation Techniques F. L. Chiu and S. H. L. Tu Fu Jen Catholic University, Taiwan P29: A PWM Controller with Table Look up for DC DC Class E Buck/Boost Conversion S. Hung Lung Tu and H. W. Yeh Fu Jen Catholic University, Taiwan P30: 2DEG Transport in Gate Recessed AlGaN/(InGaN)/GaN HEMT T. R. Lenka, G. N. Dash and A. K. Panda NIT SILCHAR, Sambalpur University, National Institute of Science and Technology, India P31: Effect of Bias Dependence of Substrate NPN Transistor on Total Dose Irradiation T. Zhang, Y. Liu, B. Li, Y. F. En and Y. J. He South University of Technology, P32: A W Band Two Stage Cascode Amplifier with Small Signal Gain of 25.7 db Y. H. Zhong, Y. M. Zhang, Y. M. Zhang, H. F. Yao, Y. X. Cao, X. T. Wang, H. L. Lu and Z. Jin Xidian University, P35: Total Dose Induced Bias Current Variation in the LM124 Operational Amplifier with Different Bias J. Liu, Y. Liu, Y. F. En, Y. Z. Yang, Y. J. He and S. Qian Electronic Product Reliability and Environmental Testing Research Institute, P36: An All Digital Duty Cycle Corrector with Synchronization and Frequency Doubling Y. H. Hsieh and S. K. Kao Chang Gung University, Taiwan P37: Unclamped Inductive Switching Stress Failure Mechanism of LDMOS V. Kumar, G. S. Shreyas, C. Khaund, A., K. Nidhi, S. M. Yang and G. Sheu Asia University, Taiwan P38: Zn Doped Zr Oxynitride as Charge Trapping Layer for Flash Memory Applications Q. B. Tao and P. T. Lai The University of Hong Kong, Hong Kong P39: Standard Cell Library Design with Voltage Scaling and Transistor Sizing for Ultra Low Power Biomedical Applications C. I. Leong, M. Li, M. K. Law, P. I. Mak, M. I. Vai, P. U. Mak, F. Wan and R. P. Martins University of Macau, Macau P40: Analysis of Microhelix Inductors with Focused Ion Beam Z. Q. Wang, Y. F. Mao, L. R. Zhao, W. G. Wu and J. Xu 14

15 P41: E Nose Based on Metallo Tetraphenylporphyrin/ SWNT COOH for Alcohol Detection S. Siyang, T. Seesaard and P. Lorwongtragool Mahidol, Thailand P42: 30 GHz 2 Stage MMIC Low Noise Amplifier Using GaAs Pseudomorphic HEMT A. Rasmi, H. T. Hsu, I. M. Azmi, A. I. A. Rahim and E. Y. Chang TM Research & Development Sdn Bhd, Malaysia P43: Intelligent Smelling Shirt Based on Fabric Sensors for Health Status Monitoring T. Seesaard, P. Lorwongtragool and C. Khunarak Mahidol University, Thailand P44: Some Examples of the Application of a Unified Schottky Poole Frenkel Theory to High k Dielectric Capacitor Structures W. S. Lau, O. Y. Wong, and H. Wong City University of Hong Kong, Hong Kong; Zhejiang University, P45: Design and Realization of a Voltage Detector Based on Current Comparison in a 40nm Technology S. Y. Wu, W. B. Chen, N. Ning, J. Li, Y. Liu and Q. Yu, UESTC, P46: A Study of Fluorine Dose and Implant Energy to the NBTI upon p+ Implant Sequence Siti Zubaidah Md Saad, Tan Chan Lik and Sukreen Hana Herman Universiti Teknologi Mara, Malaysia P47: Design of a Four Phase 25% Duty Cycle DLL with Calibration N. Ning, Y. Hu, J. Li, C. Yang, S. Y. Wu and Q. Yu University of Electronic Science and Technology of, P48: Correctness of BDEC Compared to PGM in Assessing Reliability of Nano Based Circuits N. S. S. Singh, N. H. Hamid and V. S. Asirvadam Universiti Teknologi Petronas, Malaysia P49: A 1.8ppm/oC Low Temperature Coefficient Curvature Compensated Bandgap for Low Voltage Application C. Yang, X. Cui, B. Wang and L. L. Chung P50: Study on the Theorem of Pits Created in 12 Inch Raw Wafering P. Y. Chen and W. K. Yeh I Shou University, Taiwan P51: A 60 GHz Broadband Gilbert Cell Down Conversion Mixer in a 65 nm CMOS J. Shi, L. Li and T. J. Cui Southeast University, P52: Influence of Defects on the Quasi Free Electron Distribution on Nanotubes: A Two Dimensional Approach L. D. Filip National Institute for Materials Physics, Romania 15

16 P53: S Band Broadband RF LDMOS with Excellent Performance T. Yu, Z. Qiu Institute of Semiconductor, CAS, ; Northwestern Polytechnical University, P54: Design and Synthesis of Wishbone Bus Crossbar Switch ASIC Interconnection for SoC Integration M. Sharma and D. Kumar SSIET Patti, India P55: Minority Carrier Charge Storage Time of a Uniformly Doped Schottky Barrier Diode Md. A. Abeed and T. Ahmed BUET, Bangladesh P56: A Study Using Two Stage NBTI Model for 32 nm High k PMOSFET H. Hussin, M. Muhamad, Y. A. Wahab, S. S. Shahabuddin, N. Soin and M. F. Bukhori Universiti Teknologi MARA, Malaysia; University of Malaya, Malaysia; Universiti Kebangsaan Malaysia, Malaysia P57: The Time Domain Simulation for the Interaction Section of TWT T. Liu University of Petroleum, P58: Design Optimization of Gate All Around Vertical Nanowire Transistors for Future Memory Applications T. K. Agarwal, O. Badami, S. Ganguly, S. Mahapatra and D. Saha IIT, Bombay, India P59: Effect of Temperature on Ballistic Transport of Cylindrical (10, 0) CNTFET Md. S. Hossain, S. U. Z. Khan, A. Aziz and M. W. Rahman Bangladesh University of Engineering and Technology, Bangladesh P60: Feature Size Dependence of Total Dose Effects in the Irradiated NMOS Devices Y. He, Y. Liu and X. L. Zhou Science and Technology on Reliability Physics and Application of Electrical Component Laboratory, P61: Effects of Process Parameters Variations on Linearity of Underlap SOI MOSFETs with High k Stack on Spacer I. V. Singh and M. S. Alam Aligarh Muslim University, Aligarh, India P62: Optimization of Microwatt On Chip Charge Pump for Single Chip Solar Energy Harvesting Z. Chen, M. K. Law, P. I. Mak and R. P. Martins University of Macau, Macau P63: Reducing Thermal Resistance of DIP8 Package Based on Lead Frame Optimization D. Zhang, S. Liu and W. Sun Southeast University, Nanjing, P64: A Charge Pump with Reduced Current Variation and Mismatch in Low Voltage Low Power PLLs Y. Jia, J. Fang, M. Qiao, Z. Zhou, W. Yang and B. Zhang University of Electronic Science and Technology of, 16

17 P65: P type Shallow Junction as Implanted Profile Prediction Using Kinetic Monte Carlo Simulation P. A. F. Yannu, E. D. Kurniawan, M. Manjunatha, S. M. Yang and G. Sheu Asia University, Taiwan P66: Investigation in Characteristics of 1200V Vertical IGBT for Different Trench Designs A. K. Pulikkathodi, V. Suresh, S. M. Yang and G. Sheu Asia University, Taiwan P67: Characteristics of Gate Inside Junctionless Transistor with Channel Length and Doping Concentration P. Kumar, C. Sahu, A. Shrivastava, P. N. Kondekar and J. Singh PDPM Indian Institute of Information Technology, Design & Manufacturing, Jabalpur, India P68: A Novel Superjunction MOSFET with Buried Oxide R. Vaid and D. Sharma University of Jammu, India P69: The Advanced Sensor Applied to the Dust Charged Detection M. Cao, X. Z. Cheng and H. Yu Shandong University of Science and Technology, ; Capitol College, United States P70: A High Efficiency Hysteresis Buck Converter Using Auto Selectable Frequency Locked Techniques T. H. Wu, J. J. Chen and Y. S. Hwang National Taipei University of Technology, Taiwan P71: A High Speed and Reliable TFT Integrated Shift Register Z. Hu, C. Liao, C. Zheng and S. Zhang P72: A 3 Transistor CMOS Active Pixel with in Pixel Correlated Double Sampling S. Liu, L. Jiang, H. Yu, Y. Li, D. M. Xi and Q. Xie Shenzhen University, ; Huazhong University of Science and Technology, P73: Quantum Tunneling Based Percolating Transport of Electric Charges in a Network of Conductive Nanoclusters Embedded in a Dielectric Matrix V. Filip, D. Nikezic and H. Wong University of Bucharest, Romania; University of Kragujevac, Serbia, City University of Hong Kong, Hong Kong P74: Failure Analysis of Output Stage Due to ESD Stress in Submicron CMOS Technology X. Huang, J. Shi, W. Huang and F. Liu Sichuan Institute of Solid State Circuits, ; State Key Laboratory of Electronic Thin Films and Integrated Devices, P75: Study on the Theorem of Particles Monitoring for Wet Bench of 12 Inch Process P. Y. Chen and W. K. Yeh I Shou University, Taiwan; National University of Kaohsiung, Taiwan P76: Determination of Dielectric Constant of Substrate Material Using a Fractal Resonator Sensor B. Jackson and T. Jayanthy Sathyabama University, India; Panimalar Institute of Technology, India 17

18 P78: Performance Analysis of Low Power and High Frequency Novel RF Power Amplifier for 4G Systems K. Guha, P. Ganguly and S. Baishya N.I.T Silchar, India P79: Sub Threshold 8T SRAM Cell Immune to Process Variations at ULV Supply C. B. Kushwah and S. K. Vishvakarma, Indian Institute of Technology Indore, India P80: The Analyze and Design of Low FPN Double Delta Sampling Circuit for CMOS Image Sensor X. Liu, Y. Zhao, L. Liu, X. Jin, C. Wang and Y. Zhao Beijing Microelectronics Tech. Institution (BMTI), P81: A Chip Level Integrated Optical Spectrometer Based on Pit Interferometers T. Yang, Y. Chen, X. Li, W. Huang, Q. Wang, Y. Zhu and H. Ho Nanjing University of Posts and Telecommunications, ; The Chinese University of Hong Kong, Hong Kong P82: Novel Integrated Optical Microspectrometer Using Silica Nanoparticles T. Yang, W. Li, X. Li, W. Huang, Q. Wang, Y. Zhu and H. Ho Nanjing University of Posts and Telecommunications, ; The Chinese University of Hong Kong, Hong Kong P83: A Parallel Delta Sigma ADC Based on Compressive Sensing X. Xiong, C. Han, Q. Ding, L. Liu and D. Li Tsinghua University, ; Chinese Academy of Sciences, ; P84: A 6Bit 3GS/s Two Channel Time Interleaved Interpolating Flash ADC Y. C. Chen, J. S. Lai and Z. M. Lin National Changhua University of Education, Taiwan P85: A High Gain Fully Integrated CMOS LNA for WLAN and Bluetooth Application L. Yang, Y. Yan, G. Qin, J. Ma and Y. Zhao Tianjin University, P86: Effects of Antimony and Arsenic Ion Implantation on High Performance of Ultra High Voltage Device V. N. V. Kumar, M. Manjunatha, V. Suresh, S. M. Yang, G. Sheu and P. A. Chen Asia University, Taiwan; Nuyoton Technology Corporation, Taiwan P87: Characterization of Diaphragm in High Pressure Sensors with a Double Wheatstone Bridge Structure X. Huang, D. Zhao, J. He, F. Yang and D. Zhang P88: A UHF RFID Reader Baseband for Multi Protocol with Universal Transmitter S. Li, Y. Wang, C. Zhang and Q. Peng Tsinghua University, P89: Ionizing Radiation Induced Leakage Current in the PD SOI Devices with Different Layout Structures Y. Liu, Y. J He, Y. F En and Q. Shi Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, P90: A CMOS Photo Amplifier for Living Body Real Time Detection of Free Radical C. H. Chang and Z. M. Lin. National Changhua University of Education, Taiwan 18

19 P91: Charge Trapping Characteristics of Niobium Doped La 2 O 3 for Nonvolatile Memory Applications R. P. Shi, X. D. Huang, C. H. Leung and P. T. Lai University of Hong Kong, Hong Kong P93: Energy Flux Density in Twisted Clad Optical Fibers M. A. Baqir and P. K. Choudhury Universiti Kebangsaan Malaysia, Malaysia P94: A Compact SPICE Model for Bipolar Resistive Switching Memory K. H. Hsu, W. W. Ding and M. H. Chiang National Ilan University, Taiwan P95: A Multi Channel Video Multiplexer with High Isolation Switch X. Huang, L. Liu, W. Huang and Z. Huang Sichuan Institute of Solid State Circuits, ; State Key Laboratory of Electronic Thin Films and Integrated Devices, ; Sichuan Institute of Solid state Circuits, P96: A High PSRR Bandgap Voltage Reference with Temperature Curvature Compensation Used for Pipeline ADC S. Zhang, Z. Wang, L. Zhou, W. Feng, Y. Ding Beijing Microelectronics Tech. Institution, P97: Threshold Voltage Model for Double Gate p IMOS H. Yao and S. Foad Beihang University, P98: Analysis on the CTLM and LTLM Applicability for GaN HEMTs Structure Alloyed Ohmic Contact Resistance Evaluation S. Lin, D. Meng, C. P. Wen, M. Wang, J. Wang, Y. Hao, Y. Zhang, and K. M. Lau ; Suzhou Institute of Nano tech and Nano bionics, Chinese Academy of Sciences, ; Hong Kong University of Science of Technology, Hong Kong P99: A Low Power CMOS Low Noise Amplifier for Ultra Wideband Applications C. T. Chang and S. Wang National Taipei University of Technology, Taiwan P100: A Programmable 8.3mW, MHz BW, dB SNDR VCO Based ADC With Switched Capacitor Linearization W. El Halwagy, M. Dessouky, H. El Ghitani Ain Shams University, Egypt; Misr International University, Egypt P101: Low Temperature Synthesis of ZnO Nanotubes Based Hydrogen Sensors B. R. Huang and J. C. Lin National Taiwan University of Science and Technology, Taiwan P102: Fabrication of Monolithic Integrated MEMS Resonator with Wet Release Monitoring Array D. Zhao, J. He, X. Huang, L. Zhang, F. Yang and D. Zhang P103: A Prototype of ROIC for Pyroelectric Uncooled IRFPA with Colume Level ADC G. Wang, W. Lu, Y. Zhang, Z. Chen and L. Ji 19