ACTIVE Project INFN Group V Call. Participant Institutes:! Bari, Cosenza, Genova, Firenze, Milano, Milano Bicocca, Pisa, Torino, Trento, Udine!

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1 ACTIVE Project INFN Group V Call o SharePoint: PIXEL Participant Institutes: Bari, Cosenza, Genova, Firenze, Milano, Milano Bicocca, Pisa, Torino, Trento, Udine National Coordinator: G. Darbo / INFN Genova ACTIVE Project INFN Group V Call ACTIVE INFN / Italy V July 2013

2 Pixel Roadmap LHC HL-LHC HL-LHC Pixels requirements ATLAS roadmap Pixel Size 10 20x TID/NIEL dose 6x event pile-up 2003 Future pixel driven by technology advances: Electronics: 65nm, pixels dimensions ê, rad-hard. é, thresh.ê, required chargeê Sensor: detector/material engineering, thickness ê, pixel geometry ê, slim/ active edge Hybridization: no. bump/chip é, chip area é, thickness ê Cooling: material budget ê, CO2 using µ-channels mm Technology roadmap FE-I4A 7.6 mm ACTIVE INFN / Italy ½ threshold 18.8 mm CMS Pixels for LHC & LHC Phase I: PSI46dig Tech: 250 nm Size: 100 x 150 µm2 FE-I3 20x TID dose 20x NIEL ACTIVE Project INFN Group V Call 5.3x the Active Area 10.8 mm 5x Chip Size 2.8 mm 2.0 mm V July

3 Pixel Gr.5 Call " Project name (Sigla INFN) National Coordinator: G. Darbo Acronym: ACTIVE: Atlas and Cms Towards InnoVative pixels Could also mean (our vision): Atlas and Cms Together for InnoVative pixels " Main Activities (WP): Pixel 3D: 2x10 16 n eq cm -2, small (1/3 of FE-I4 pixel size) needs thin ( µm, epitaxial or with support wafer), active edge, charge multiplication. FBK as main silicon foundry Bump-bonding: develop (and QC) BB for bumps/chip, thin ( 100µm) FE-I4 (size), Indium bumps use BB as part of the sensor test main foundry Selex (interest in a framework contract). Bump-bonding development is critical technology, as experienced in the present ATLAS IBL. Micro-channel cooling: technology developed in Italy by SuperB and NA62. It is potentially very interesting for low material budget applications (Innermost Pixel Layer). Silicon with DRIE processing (FBK) or composite material micro-channels. Study (long) µ-channel with evaporative CO 2. Look for implementation technologies towards the application in the Pixel systems of future upgrades. Modules, Irradiation & Test-beam: put together sensor and electronics by bump-bonding. Irradiation with n, p and gamma. Measure at test beam. Demonstrator of module on µ-channel cooled support. " Project target goal Develop core technologies for Pixel (Innermost Pixel Layer) upgrades at HL-LHC: Use already leading expertise in INFN and push to a new step forward Activate stronger links and synergy between ATLAS/CMS as a seed for building the new Pixel detectors based on technological leadership Use existing industrial partnership (national and international) and develop to a further level Work in an international framework: RD groups, ATLAS/CMS, Industry. Use R&D links across technologies for a global optimization of the Pixels detector V July

4 Sezioni, WP & Costs Work packages and Coordinators Name Coordinator(s) Sez.2Coord. WP1 Sensor*design,*production*and*test Gian5Franco*Dalla*Betta TN WP2 Bump5bonding*5*process*qualification Gianluca*Alimonti MI WP3 Micro5channel*cooling Filippo*Bosi PI WP4 Module*assembly*&*Test Claudia*Gemme GE WP5 Irradiation*&*Test*beam Luigi*Moroni MIB WP6 Project*&*Resource*Coordination Project(Coordinator Sezioni:/:Partecipanti:&:FTE BA CS FI GE MI MIB PI TN TO UD Total RIC/TEC FTE V July

5 Partecipanti e Coordinatori Locali No. Sezione Nome Cognome Ruolo %0FTE 1 BA Donato) Creanza PA 30% 2 BA Mauro de)palma)) PO 30% 3 BA Luigi) Fiore 1=RIC 20% 4 BA Salvatore My RIC 30% 5 CS Giuseppe) Cocorullo PO) 10% 6 CS Felice Crupi PA 10% 7 CS Anna Mastroberardino RU) 20% 8 CS Francesco) Pellegrino Tecn.Cat.C 30% 9 CS Antonio) Policicchio Assegnista) 10% 10 CS Daniela Salvatore Assegnista) 20% 11 CS Giancarlo) Susinno PE) 30% 12 FI Raffaello D Alessandro PA 10% 13 FI Ettore Focardi PA 30% 14 FI Marco Meschini) DR 30% 15 FI Simone Paoletti RIC 30% 16 GE Giovanni Darbo DR 40% 17 GE Andrea Favareto Assegnista) 20% 18 GE Claudia Gemme RIC 10% 19 GE Elisa Guido Assegnista) 20% 20 GE Leonardo Rossi DR 20% 21 MI Gianluca Alimonti RIC 40% 22 MI Attilio Andreazza PA 30% 23 MI Tommaso Lari Ric 20% 24 MI Chiara Meroni DR 20% 25 MIB Mauro Dinardo RU 20% 26 MIB Simone Gennai RIC 20% 27 MIB Sandra Malvezzi 1=RIC 20% 28 MIB Dario Menasce 1=RIC 20% 29 MIB Luigi Moroni DR 20% 30 PI Konstantin Androsov Dott 20% 31 PI Tommaso Boccali RIC 20% 32 PI Filippo Bosi TEC 30% 33 PI Maria)Agnese Ciocci RU 5% 34 PI Roberto Dell Orso 1=RIC 25% 35 PI Alberto Messineo RU 25% 36 PI Andrea Moggi TC 20% 37 PI Piero)Giorgio Verdini 1=RIC 20% No. Sezione Nome Cognome Ruolo %0FTE 38 TN Gian)Franco Dalla0Betta0 PA0 30% 39 TN Giorgio Fontana TEC 20% 40 TN Leo Huf0Campos0Braga0 Dott.0 50% 41 TN Lucio0 Pancheri RU 40% 42 TN Ekaterina0 Panina Dott.0 50% 43 TN Giovanni0 Verzellesi PO0 30% 44 TN Hesong Xu Dott.0 50% 45 TO Marco Costa0 PA 30% 46 TO Margherita Obertino Assegnista0 20% 47 TO Marta Ruspa0 RU 20% 48 TO Ada Solano PA 30% 49 UD Marina Cobal PA 20% 50 UD Carlo del0papa PO 50% 51 UD Mario0Paolo Giordani RU 30% Sezione BA CS FI GE MI MIB PI TN TO UD RESPONSABILI5LOCALI Responsabile Donato(Creanza Anna(Mastroberardino Marco(Meschini Giovanni(Darbo((Resp.(Naz.) Gianluca(Alimonti Mauro(Dinardo Alberto(Messineo GianEFranco(Dalla(Betta Ada(Solano Mario(Paolo(Giordani V July

6 ACTIVE TECHNOLOGY IN PILLS V July

7 3D Sensors Ref: (courtesy) G.F. Dalla Be\a Process and design aspects Fully double sided process No support wafer (substrate bias from the back side) Empty columns, with 11 µm diameter and 230 um thickness Slim edge (200 µm for IBL, but also tested down to 75 µm for AFP) Temporary metal for I- V tests Main results Tested with FE- I3, FE- I4 and CMS ROCs (laboratory and beam test) Qualified for ATLAS IBL: >98% efficiency for 15º tracks at 160 V a]er 5x10 15 n eq /cm 2 IBL producaon at FBK with ~50% yield Deep understanding of sensor behavior References (main) C. Da Vià et al., 3D ac/ve edge silicon sensors: Device processing, yield and QA for the ATLAS- IBL produc/on, NIMA 694 (2012) 321. IBL Collabora/on, Prototype ATLAS IBL modules using the FE- I4A front- end readout chip, JINST 7 (2012) C10006 E. Alagoz, Simula/on and laboratory test results of 3D CMS pixel detectors for HL- LHC, JINST 7 (2012) P08023 V July

8 Critical Aspects Future 3D Generation Batch IBL Produc8on Summary of 3D Sensors at FBK Tested Wafers IBL 3D Sensor Wafer (FBK) Selected Wafers Number of Sensors Tiles Relaavely low intrinsic breakdown voltage (p- spray related, well understood) Might be an issue for post irradiaaon performance High sensiavity to process defect (a single defect kills an enare sensor) - High yield variability Address current issues in the new 3D Genera/on Number of Good Sensor Tiles Ref: (courtesy) G.F. Dalla Be\a Ref.: G. Giacomini, et al., IEEE TNS 60(3) (2013) 2357 Yield on Selected Wafers (%) 3D ATLAS % 3D ATLAS % 3D ATLAS % 3D ATLAS % V July

9 3D Sensor Future Developments " Smaller pixel size in future ROC s (e.g., 150 x 25 mm2) & smaller inter- electrode distance for radia/on hardness: Both lead to higher column density and bump density Narrower electrodes desirable for higher geometrical efficiency and lower capacitance This calls for thinner substrates given a constant column aspect raao with DRIE Thinner substrates also help with electrode (at least paraal) filling with poly- Si to obtain some efficiency (also using oxygen- free doping gas) " FBK produc/on line upgrade from 4 to 6 wafers completed Acavity restarted in Spring 2013 with internal test batches 6 allows for higher producaon volumes (>2x area on wafer) and lower costs per sensor, but thinner acave substrate may require to invesagate possible alternaaves: epitaxial or wafer bonding to of thinned down wafer on a support one. Sensor thickness: target for signal (at given threshold )? 150 µm: may be OK with passive sensor - below 100 µm: calls for charge mulaplicaaon Ref: (courtesy) G.F. Dalla Be\a V July

10 Bump-Bonding " Most diffused bump-bonding techniques: Solder bump (SnAG) require high temp reflow (T=250ºC) Becomes critical on large thin/chip (thermal bow of not compensated CTE mismatch between metal (interconnects) and silicon (chip bulk) IZM addressed with provisional gluing of thinned electronic wafer on glass substrate (handling wafer) IBL experience on module production shows low yield and tuning difficulties. Minimum thickness (IBL) of electronic chip is 150µm. Module assembly and Measurements done in Genova IBL Module with Indium bumps and 100µm FE-I4 Indium bumps (Indium). Low temperature process (T=90ºC) Criticality is planarity and applied force. Process well qualified for ATLAS pixel modules (>1000 made): 180µm thickness 5x smaller chips. Limited positive experience with Selex and 100µm and 200µm thin FE-I4 chips. - Develop to higher bump density ( bumps) and complete qualification on thin ( 100µm) FE-I4 modules - Test new 3D sensors with Indium bump Ref.: G Alimon/ et al 2013 JINST 8 P01024 doi: / /8/01/p01024 V July

11 Test Bench for µ-channel Cooling µ- channel cooling pioneered at Pisa for SuperB and VPIX Thermo- fluid- dynamic lab exists (Pisa) for cooling tests and thermal characteriza/on of low mass support structure based on micro- channel technology Test bench and chiller for forced convec/on of liquid monophase upgrade to CO2 evapora/ve (ATLAS & CMS) Some exper/se on bi- phase cooling available in other groups: GE, MI. The instrumentaaon allows to measure/store the values of temp/pressure/flow in the thermal exchange. DAQ HW system (N.24 probe for temperatures, pressure and flow ). Chiller dimensioned for a cooling power > 1/2 kw primary and secondary cooling circuit Ref: F. Bosi, M. Massa, SuperB Workshop 4 7 April 2011, INFN- LNF - (courtesy) A. Messineo V July

12 Silicon µ-channel Cooling Silicon µ-channels Modules produced at FBK using same technology as 3D sensors anisotropic etching (DRIE). 150 µm 500 µm From a 4 wafer obtained no.5 silicon modules of 12.8 width mm x 60 mm length x 500 µm thick with N.61 µ-channels to perform cooling tests. 4.2 µm Activity in the SuperB and VIPIX projects. 7-8 µm Silicon oxide sealing Ref: F. Bosi, M. Massa, SuperB Workshop 4 7 April 2011, INFN- LNF (courtesy) A. Messineo ACTIVE INFN / Italy ACTIVE Project INFN Group V Call V July

13 Composite µ-channels 700 µm Peek pipe Dh=300 µm The single base µ- channel unit A square CF micro- tube with an internal peek tube 50 µm thick used to avoid moisture on carbon fiber 550 µm 550 µm Peek pipe Dh=200 µm 700 µm Carbon Fiber Pultrusion 700 µm 12.8 mm Support Cross Secaon Full micro- channel module The total radiaaon length (*) of this support is 0.28 %X 0 Net micro- channel module Same dimensions of full micro- channel but vacancies of tubes in the structure. The total radiaaon length (*) is 0.15 %X 0 (*) : Material of the support structure: ( All C.F. material + peek tube + Water) Ref: F. Bosi, M. Massa, SuperB Workshop 4 7 April 2011, INFN- LNF - (courtesy) A. Messineo V July

14 Call Organization SharePoint: cern.ch/infn-pixelrd Kick-off meeting WP WBS Group responsibility associated through WBS - Workpackages Breakdown Structure: tasks/deliverables. V July