IGBT SIP Module (Ultrafast IGBT)

Transcription

1 IGBT SIP Module (Ultrafast IGBT) FEATURES PRODUCT SUMMARY IMS2 OUTPUT CURRENT IN A TYPICAL 20 khz MOTOR DRIVE V CES 600 V I RMS per phase (2. kw total) with T C = 90 C 7. A RMS T J 25 C Supply voltage 360 V DC Power factor 0.8 Modulation depth (see fig. ) 5 % V CE(on) (typical) at I C = 6.8 A, 25 C.7 V Speed 8 khz to 30 khz Package SIP Circuit Three phase inverter Fully isolated printed circuit board mount package Switchingloss rating includes all tail losses HEXFRED soft ultrafast diodes Optimized for medium speed, see fig. for current vs. frequency curve UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see DESCRIPTION The IGBT technology is the key to Vishay s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gatedrive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 600 V T C = 25 C 3 Continuous collector current, each IGBT I C T C = 0 C 6.8 Pulsed collector current I () CM 40 Clamped inductive load current I (2) LM 40 A Diode continuous forward current I F T C = 0 C 6. Diode maximum forward current I FM 40 Gate to emitter voltage V GE ± 20 V Isolation voltage V ISOL Any terminal to case, t = min 2500 V RMS T C = 25 C 36 Maximum power dissipation, each IGBT P D T C = 0 C 4 W Operating junction and storage temperature range T J, T Stg 40 to +50 C Soldering temperature For s, (0.063" (.6 mm) from case) 300 Mounting torque 632 or M3 screw Notes () Repetitive rating; V GE = 20 V, pulse width limited by maximum junction temperature (see fig. 20) (2) V CC = 80 % (V CES ), V GE = 20 V, L = μh, R G = 23 (see fig. 9) 5 to 7 (0.55 to 0.8) lbf in (N m) Revision: Jun5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TYP. MAX. UNITS Junction to case, each IGBT, one IGBT in conduction R thjc (IGBT) 3.5 Junction to case, each DIODE, one DIODE in conduction R thjc (DIODE) 5.5 C/W Case to sink, flat, greased surface R thcs (MODULE) g Weight of module 0.7 oz. ELECTRICAL SPECIFICATIONS (T J = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter saturation voltage V CE(on) Collector to emitter breakdown voltage V () (BR)CES V GE = 0 V, I C = 250 μa 600 V Temperature coeff. of breakdown voltage V (BR)CES T J V GE = 0 V, I C =.0 ma 0.63 V/ C I C = 3 A V GE = 5 V 2.00 See fig. 2, 5 V I C = 6.8 A I C = 6.8 A, T J = 50 C.70 Gate threshold voltage V GE(th) V CE = V GE, I C = 250 μa Temperature coeff. of threshold voltage V GE(th) / T J mv/ C Forward transconductance g (2) fe V CE = 0 V, I C = 6.8 A S Zero gate voltage collector current I CES μa V GE = 0 V, V CE = 600 V 250 V GE = 0 V, V CE = 600 V, T J = 50 C 2500 Diode forward voltage drop V FM See fig. 3 V I C = 2 A.4.7 I C = 2 A, T J = 50 C.3.6 Gate to emitter leakage current I GES V GE = ± 20 V ± 0 na Notes () Pulse width 80 μs, duty factor 0. % (2) Pulse width 5.0 μs; single shot Revision: Jun5 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 SWITCHING CHARACTERISTICS (T J = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turnon) Q g IC = 6.8 A Gate to emitter charge (turnon) Q ge V CC = 400 V Gate to collector charge (turnon) Q gc See fig Turnon delay time t d(on) 43 Rise time Turnoff delay time Fall time Turnon switching loss Turnoff switching loss t r t d(off) t f E on E off T J = 25 C I C = 6.8 A, V CC = 480 V V GE = 5 V, R G = 23 Energy losses include tail and diode reverse recovery. See fig. 9,,, Total switching loss E ts rr Turnon delay time t d(on) TJ = 50 C 4 Rise time t r I C = 6.8 A, V CC = 480 V 6 Turnoff delay time t d(off) V GE = 5 V, R G = 23 ns Energy losses include tail and Fall time t f diode reverse recovery 230 Total switching loss E ts See fig. 9,,, mj Input capacitance C ies V GE = 0 V 0 Output capacitance C oes V CC = 30 V ƒ =.0 MHz 73 pf Reverse transfer capacitance C res See fig. 7 4 Diode reverse recovery time t rr See fig. 4 ns T J = 25 C T J = 25 C T J = 25 C See fig. 5 I F = 2 A 5.6 A Diode peak reverse recovery charge I T J = 25 C Diode reverse recovery charge Q rr T J = 25 C See fig. 6 V R = 200 V di/dt = 200 A/μs nc T J = 25 C Diode peak rate of fall of recovery during t b di (rec)m /dt T J = 25 C 80 See fig. 7 T J = 25 C 6 nc ns mj A/μs Revision: Jun5 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 LOAD CURRENT (A) Tc = 90 C Tj = 25 C Power Factor = 0.8 Modulation Depth =.5 Vcc = 50% of Rated Voltage Total Output Power (kw) f, Frequency (KHz) Fig. Typical Load Current vs. Frequency (Load Current = I RMS of Fundamental) 0 4 V GE = 5V I C, CollectortoEmitter Current (A) T J = 50 C V GE = 5V 20µs PULSE WIDTH V CE, CollectortoEmitter Voltage (V) Maximum DC Collector Current (A) T, Case Temperature ( C) C Fig. 2 Typical Output Characteristics Fig. 4 Maximum Collector Current vs. Case Temperature I C, CollectortoEmitter Current (A) 0 T J = 50 C V CC = V 5µs PULSE WIDTH V GE, GatetoEmitter Voltage (V) V CE, CollectortoEmitter Voltage(V) V GE = 5V 80 us PULSE WIDTH I C= 3.6A I C= 6.8A I C= 3.4A T J, Junction Temperature ( C) Fig. 3 Typical Transfer Characteristics Fig. 5 Typical Collector to Emitter Voltage vs. Junction Temperature Revision: Jun5 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 Thermal Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) t, Rectangular Pulse Duration (sec) Fig. 6 Maximum Effective Transient Thermal Impedance, Junction to Case P DM t t 2 Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc + T C C, Capacitance (pf) V GE = 0V, f = MHz C ies = C ge + C gc, C ce SHORTED C res = Cgc C oes = C ce + C gc C ies C oes C res Total Switching Losses (mj) V CC = 480V V GE = 5V T J = 25 C I C = 6.8A 0 0 V CE, CollectortoEmitter Voltage (V) Fig. 7 Typical Capacitance vs. Collector to Emitter Voltage R G, Gate Resistance ( Ω) Fig. 9 Typical Switching Losses vs. Gate Resistance V GE, GatetoEmitter Voltage (V) V CC = 400V I C = 6.8A Total Switching Losses (mj) R G = 23 Ω V GE = 5V V CC = 480V I C = 3.6 A I C = 6.8 A I C = 3.4 A Q G, Total Gate Charge (nc) Fig. 8 Typical Gate Charge vs. Gate to Emitter Voltage T J, Junction Temperature ( C ) Fig. Typical Switching Losses vs. Junction Temperature Revision: Jun5 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 Total Switching Losses (mj) R G = 23 Ω T J = 50 C V CC = 480V V GE = 5V I C, Collectortoemitter Current (A) Fig. Typical Switching Losses vs. Collector to Emitter Current I C, CollectortoEmitter Current (A) 0 V GE = 20V o T J = 25 C SAFE OPERATING AREA V CE, CollectortoEmitter Voltage (V) Fig. 2 TurnOff SOA 0 Instantaneous Forward Current I F (A) T J = 50 C Forward Voltage Drop V FM (V) Fig. 3 Maximum Forward Voltage Drop vs. Instantaneous Forward Current Revision: Jun5 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 V R = 200V V R = 200V 20 I F = 24A 400 t rr (ns) 80 I F = 2A I = 6.0A F Q RR (nc) I F = 24A 200 I F = 2A 40 I F = 6.0A 0 0 di f /dt (A/µs) di f /dt (A/µs) 00 Fig. 4 Typical Reverse Recovery Time vs. di F /dt Fig. 6 Typical Stored Charge vs. di F /dt V R = 200V V R = 200V I IRRM (A) I F = 2A I F = 6.0A I = 24A F di(rec)m/dt (A/µs) 00 0 I F = 6.0A I F = 2A I F = 24A 0 di f /dt (A/µs) 00 0 di f /dt (A/µs) 00 Fig. 5 Typical Recovery Current vs. di F /dt Fig. 7 Typical di (rec)m /dt vs di F /dt Revision: Jun5 7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 GATE VOLTAGE D.U.T. Same type device as D.U.T. % +Vg +Vg Vce DUT VOLTAGE AND CURRENT 80 % of V CE 430 µf D.U.T. % Ic Vcc 90% Ic Ipk Ic td(on) tr 5% Vce Vce ie dt t2 Eon = t t t2 Fig. 8a Test Circuit for Measurements of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f Fig. 8c Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t r +Vge 90% Vge Ic trr trr Qrr id dt = tx Vce tx % Vcc % Irr Vcc % Vce Ic Ic 90% Ic Vpk Irr 5% Ic td(off) tf DIODE RECOVERY WAVEFORMS t+5µs Eoff = Vce ic dt t DIODE REVERSE RECOVERY ENERGY t4 Erec Vd id dt = t3 t t2 t3 t4 Fig. 8b Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f Fig. 8d Test Waveforms for Circuit of Fig. 8a, Defining E rec, t rr, Q rr, I rr Vg GATE SIGNAL DEVICE UNDER TES CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D t0 t t2 Fig. 8e Macro Waveforms for Figure 8a s Test Circuit Revision: Jun5 8 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 50 V 6000 µf 0 V L 00 V V C D.U.T V R L = 480 V 4 x I C at 25 C Fig. 9 Clamped Inductive Load Test Circuit Fig. 20 Pulsed Collector Current Test Circuit CIRCUIT CONFIGURATION 3 Q D 9 Q3 D3 5 Q5 D5 4 6 Q2 D2 Q4 D Q6 D Dimensions LINKS TO RELATED DOCUMENTS Revision: Jun5 9 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

10 Outline Dimensions IMS2 (SIP) DIMENSIONS in millimeters (inches) Ø 3.9 (0.54) 2 x (2.458) (2.20) 7.87 (0.3) 5.46 (0.25) 2.97 (0.865) (0.05) 3.94 (0.55) 4.06 ± 0.5 (0.60 ± 0.020) 5.08 (0.200) 6 x.27 (0.050) 3 x 2.54 (0.0) 6 x 0.76 (0.030) 3 x IMS2 Package Outline (3 Pins) 3.05 ± 0.38 (0.20 ± 0.05) 0.5 (0.020).27 (0.050) 6. (0.240) Notes () Tolerance uless otherwise specified ± mm (0.0") (2) Controlling dimension: inch (3) Terminal numbers are shown for reference only Document Number: For technical questions, contact: indmodules@vishay.com Revision: 30Jul07

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