Phase Control Thyristor RMS SCRs, 25 A, 35 A

Transcription

1 VS-N681, VS-N Series Phase Control Thyristor RMS SCRs, A, 3 A TO-8AA (TO-8) PRODUCT SUMMARY I T(AV) 16 A, A I T(RMS) A, 3 A V DRM /V RRM V to 1 V V TM.3 V I GT 6 ma T J - C to 1 C Package TO-8AA (TO-8) Diode variation Single SCR FEATURES General purpose stud mounted Broad forward and reverse voltage range - through 1 V Material categorization: for definitions of compliance please see MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS N681-9 N-7 UNITS I T(AV) 16 (1) (1) A T C -6 to +6 (1) - to + C I T(RMS) 3 A I TSM A Hz Hz 1 (1) 3 (1) I t (1) JEDEC registered value Hz Hz 9 37 I GT ma dv/dt - 1 (1) V/μs di/dt 7 to 1 1 A/μs V DRM Range to 8 6 to 1 V V RRM Range to 8 6 to 1 V T J -6 to +1 (1) - to +1 (1) C A s Revision: 19-Nov-1 1 Document Number: 9376 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS-N681, VS-N Series ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS (APPLIED GATE VOLTAGE ZERO OR NEGATIVE) TYPE NUMBER JEDEC registered values V RRM /V DRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE (t p < ms) V VS-N681 3 VS-N68 7 VS-N VS-N68 3 VS-N687 3 VS-N688 VS-N689 6 VS-N VS-N VS-N VS-N 8 96 VS-N6 1 1 VS-N7 1 1 T J -6 C to +1 C - C to +1 C ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS N681-9 N-7 UNITS Maximum average on-state 16 (1) (1) A I T(AV) 18 half sine wave conduction current at case temperature -6 to +6 (1) - to + (1) C Maximum RMS on-state current I T(RMS) 3 A Maximum peak, one-cycle non-repetitive surge current Maximum I t capability for fusing Maximum I t capability for individual device fusing Maximum I t capability for individual device fusing s (1) JEDEC registered value () I t for time t x = I t t x I TSM I t I t () Hz half cycle sine wave or 6 ms rectangular pulse 6 Hz half cycle sine wave or ms rectangular pulse Hz half cycle sine wave or 6 ms rectangular pulse 6 Hz half cycle sine wave or ms rectangular pulse Following any rated load condition, and with rated V RRM applied following surge Same conditions as above except with V RRM applied following surge = (1) 3 (1) t = 1 ms Rated V RRM applied 13 1 t = 8.3 ms following surge, initial T J = 1 C 9 37 t = 1 ms V RRM = following 1 8 t = 8.3 ms surge, initial T J = 1 C 13 3 t =.1 ms to 1 ms, initial T J < 1 C V RRM applied following surge = Maximum peak on-state voltage V TM T J = C, I T(AV) = 16 A ( A peak) N681, I T(AV) = A (7 A peak) N Maximum holding current I H Anode supply V, initial I T = 1. A A A s 1 8 A s (1).3 (1) V at C (typical) (1) at - C ma Revision: 19-Nov-1 Document Number: 9376 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS-N681, VS-N Series SWITCHING PARAMETER SYMBOL TEST CONDITIONS N681-9 N-7 UNITS Maximum non-repetitive rate of rise of turned-on current V DM = V to 6 V V DM = 7 V to 8 V T C = 1 C, V DM = Rated V DRM, I TM = x di/dt, gate pulse = V, 1, t p = 6 μs, t r =.1 μs maximum di/dt Per JEDEC standard RS-397,...6 T C = 1 C, V DM = 6 V, I TM = A at Hz maximum, gate pulse = V, 1, t p = 6 μs, t r =.1 μs maximum - 1 Per JEDEC standard RS-397,...6 Typical delay time t d resistive circuit, gate pulse = 1 V, T C = C, V DM = Rated V DRM, I TM = 1 A source, t p = 6 μs, t r =.1 μs A/μs 1 1 μs BLOCKING PARAMETER SYMBOL TEST CONDITIONS N681-9 N-7 UNITS Minimum critical rate of rise of off-state voltage Maximum reverse leakage current (1) JEDEC registered value V RRM, V DRM = V dv/dt T J = 1 C, exponential to 1 % rated V DRM T J = 1 C, exponential Gate open circuited 1 (typical) to 67 % rated V DRM (typical) V RRM, V DRM = 6 V. 3.3 I DRM, V RRM, V DRM = 7 V T I J = 1 C. - RRM V RRM, V DRM = 8 V. V RRM, V DRM = 1 V - V RRM, V DRM = 1 V (1) V/μs 3. - V RRM, V DRM = V 3. - ma TRIGGERING PARAMETER SYMBOL TEST CONDITIONS N681-9 N-7 UNITS t Maximum peak gate power P p < ms for N681 series; GM t p < μs for N series 6 (1) W Maximum average gate power P G(AV). (1). (1) Maximum peak positive gate current +I GM (1) A Maximum peak positive gate voltage +V GM 1 (1) - Maximum peak negative gate voltage -V GM (1) (1) V Maximum required gate current to trigger (1) JEDEC registered value T C = min. rated value Maximum required gate trigger current is the lowest value which will trigger all units with + 6 V anode to cathode 8 (1) 8 (1) I GT T C = C T C = 1 C 18. Typical gate current to trigger T C = C, + 6 V anode to cathode 3 3 Maximum required gate T C = - 6 C voltage to trigger V GT Maximum required gate trigger voltage is the lowest value which will trigger all units with + 6 V anode to cathode Revision: 19-Nov-1 3 Document Number: 9376 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ma 3 (1) 3 (1) V T C = C Typical gate voltage to trigger T C = C, + 6 V anode to cathode Maximum gate voltage not to trigger V GD T C = 1 C Maximum gate voltage not to trigger is the maximum value which will not trigger any unit with rated V DRM anode to cathode. (1). (1) V

4 VS-N681, VS-N Series THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS N681-9 N-7 UNITS Operating junction and storage temperature range T J, T Stg -6 to 1 (1) - to 1 (1) C Maximum internal thermal resistance, junction to case R thjc operation (1) Typical thermal resistance, case to sink R thcs Mounting surface, smooth, flat and greased.3.3 C/W Mounting torque ± 1 % Approximate weight Case style (1) JEDEC registered value to nut to device Lubricated threads (Non-lubricated threads) Lubricated threads (7.) lbf in.3 (.3) kgf cm.3 (3.1) N m lbf in.9 kgf cm.8 N m 1 1 g.9. oz. TO-8AA (TO-8) Maximum Allowable Case Temperature ( C) Conduction Period Sinusoidal Current Waveform T J = 1 C Fig. 1 - Maximum Allowable Case Temperature vs. Average On-State Current, N681 Series Instantaneous On-State Current (A) T J = 1 C T J = C Instantaneous On-State Voltage (V) Fig. - Maximum On-State Voltage vs. Current, N681 Series Revision: 19-Nov-1 Document Number: 9376 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS-N681, VS-N Series Average Forward Power Loss T J = 1 C Sinusoidal Current Waveform Controlled Rectifier Turned Fully On Conduction Angle Fig. 3 - Maximum Low Level On-State Power Loss vs. Current (Sinusoidal Current Waveform), N681 Series Instantaneous Gate Voltage (V) Area of Certain Triggering Area of All Possible Triggering Points Maximum Allowable Instantaneous Gate Power Dissipation. W Instantaneous Gate Current (A) Fig. - Gate Characteristics, N681 Series I F -Average Forward Power Loss 1 T J = 1 C Sinusoidal Current Waveform Controlled Rectifier Turned Fully On Conduction Angle Fig. - Maximum High Level On-State Power Loss vs. Current (Sinusoidal Current Waveform), N681 Series Gate Voltage (V) C C -6 C V GD (Max.) =. V Gate Current (ma) Fig. a - Area of All Possible Triggering Points vs. Temperature, N681 Series Z thjc - Transient Thermal Impedance ( C/W) Free Convection Forced Convection at 1 LFM Mounted on Infinite Heatsink and " x " x 1/16" Copper Fin Long Time Durations Infinite Heatsink Short Time Durations t - Square Wave Pulse Duration (s) Fig. 6 - Maximum Transient Thermal Impedance, Junction to Case, vs. Pulse Duration, N681 Series Revision: 19-Nov-1 Document Number: 9376 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 VS-N681, VS-N Series Peak Half Sine Wave On-State Current (A) 1 1 At Any Maximum Rated Load Condition And With Rated V RRM Applied Following Surge 6 Hz Hz Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, N681 Series Average Forward Power Loss Conduction Angle Sinusoidal Current Waveform T J = 1 C Controlled Rectifier Turned Fully On Fig. 1 - Maximum Low-Level On-State Power Loss vs. Average On-State Current (Sinusoidal Current Waveform), N Series Maximum Allowable Case Temperature ( C) Conduction Period Sinusoidal Current Waveform T J = 1 C Fig. 8 - Maximum Allowable Case Temperature vs. Average On-State Current (Sinusoidal Current Waveform), N Series I F -Average Forward Power Loss T J = 1 C 1 Fig Maximum High-Level On-State Power Loss vs. Average On-State Current (Sinusoidal Current Waveform), N Series 1 3 Conduction Angle Controlled Rectifier Sinusoidal Current 1. Turned Fully On Waveform Maximum Allowable Case Temperature ( C) Conduction Period Rectangular Current Waveform T J = 1 C Fig. 9 - Maximum Allowable Case Temperature vs. Average On-State Current (Rectangular Current Waveform), N Series Average Forward Power Loss Conduction Period Rectangular Current Waveform T J = 1 C Controlled Rectifier Turned Fully On Fig. 1 - Maximum Low-Level On-State Power Loss vs. Average On-State Current (Rectangular Current Waveform), N Series Revision: 19-Nov-1 6 Document Number: 9376 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 VS-N681, VS-N Series I F -Average Forward Power Loss Conduction Period Controlled Rectifier 1. Turned Fully On T J = 1 C Fig Maximum High-Level On-State Power Loss vs. Average On-State Current (Rectangular Current Waveform), N Series Instantaneous On-State Current (A) T J = 1 C T J = C Instantaneous On-State Voltage (V) Fig. 1 - Maximum Instantaneous On-State Voltage vs. Instantaneous On-State Current, N Series Z thjc - Transient Thermal Impedance ( C/W) Long Time Durations Steady State Value = 1. C/W t - Square Wave Pulse Duration (s) Fig. 1 - Maximum Transient Thermal Resistance, Junction to Case vs. Pulse Duration, N Series Short Time Durations Dimensions LINKS TO RELATED DOCUMENTS Revision: 19-Nov-1 7 Document Number: 9376 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91