MDP11N60 N-Channel MOSFET 600V, 11A, 0.55Ω

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1 General Description MDP11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDP11N6 N-Channel MOSFET 6V, 11A,.55Ω Features = 6V = V GS = V R V GS = V Applications Power Supply PFC High Current, High Speed Switching D G S Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage S 6 V Gate-Source Voltage V GSS ±3 V Continuous Drain Current ( ) T C=25 o C 11 A T C= o C 6.9 A Pulsed Drain Current (1) M 44 A Power Dissipation T C=25 o C 182 W P D Derate above 25 o C 1.45 W/ o C Peak Diode Recovery dv/dt (3) Dv/dt 4.5 V/ns Single Pulse Avalanche Energy (4) E AS 72 mj Junction and Storage Range T J, T stg -55~15 Id limited by maximum junction temperature o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) R θja 62.5 Thermal Resistance, Junction-to-Case (1) R θjc.69 o C/W Aug. 29 Version.1 1

2 Ordering Information Part Number Temp. Range Package Packing RoHS Status MDP11N6-55~15 o C TO-22 Tube Halogen Free Electrical Characteristics (Ta =25 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BS = 25µA, V GS = V Gate Threshold Voltage V GS(th) = V GS, = 25µA Drain Cut-Off Current SS = 6V, V GS = V µa Gate Leakage Current I GSS V GS = ±3V, = V - - na Drain-Source ON Resistance R DS(ON) V GS = V, = 5.5A Ω Forward Transconductance g fs = 3V, = 5.5A S Dynamic Characteristics Total Gate Charge Q g Gate-Source Charge Q gs = 48V, = 11A, V GS = V (3) Gate-Drain Charge Q gd Input Capacitance C iss - 17 Reverse Transfer Capacitance C rss = 25V, V GS = V, f = 1.MHz Output Capacitance C oss Turn-On Delay Time t d(on) - 38 Rise Time t r V GS = V, = 3V, = 11A, - 5 Turn-Off Delay Time t d(off) R G = 25Ω (3) - 76 Fall Time t f - 33 Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge I S A V SD I S = 11A, V GS = V V t rr - 43 ns I F = 11A, dl/dt = A/µs (3) Q rr - 4. µc V nc pf ns Note : 1. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 15 C. 2. Pulse test: pulse width 3us, duty cycle 2%, pulse width limited by junction temperature T J(MAX)=15 C. 3. I SD 11.A, di/dt 2A/us, V DD=5V, R g =25Ω, Starting T J=25 C 4. L=.9mH, I AS=11A, V DD=5V, R g =25Ω, Starting T J=25 C Aug. 29 Version.1 2

3 ,Drain Current [A] V gs =5.5V =6.V =6.5V =7.V =8.V =.V =15.V Notes μs Pulse Test 2. T C = ,Drain-Source Voltage [V] Fig.1 On-Region Characteristics R DS(ON) [Ω ] V GS =.V V GS =2V ,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage R DS(ON), (Normalized) Drain-Source On-Resistance V GS = V 2. = 5 A V GS =V V GS =4.5V BS, (Normalized) Drain-Source Breakdown Voltage V GS = V 2. = 25 μa T J, Junction [ o C] Fig.3 On-Resistance Variation with T J, Junction [ o C] Fig.4 Breakdown Voltage Variation vs. [A] 1 * Notes ; 1. =3V R Reverse Drain Current [A] 1 1. V GS = V 2. = 25 μa V GS [V] Fig.5 Transfer Characteristics V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Aug. 29 Version.1 3

4 V GS, Gate-Source Voltage [V] Note : I = 11A D Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics 12V 3V 48V Capacitance [pf] C oss C iss C rss.1 1, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Fig.8 Capacitance Characteristics Notes ; 1. V GS = V 2. f = 1 MHz 2 Operation in This Area is Limited by R DS(on) ms µs µs 12, Drain Current [A] -1 DC ms ms, Drain Current [A] Single Pulse T J =Max rated T C = , Drain-Source Voltage [V] T C, Case [ ] Fig.9 Maximum Safe Operating Area Fig. Maximum Drain Current vs. Case single Pulse R thjc =.69 /W T C = 25 Z θ JC (t), Thermal Response -1 D= Duty Factor, D=t 1 /t 2 Power (W) single pulse PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =.69 /W t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve 2 1E-5 1E-4 1E Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Aug. 29 Version.1 4

5 Physical Dimensions Aug. 29 Version.1 5

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