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1 Distributed by: The content and copyrights of the attached material are the property of its owner.
2 Lead-free BX84C 2V4 - BX 84C39 35mW SURFACE MO UNT ENER DIO DE Features Planar Die Construction 35mW Power Dissipation ener Voltages from 2.4V - 39V Ideally Suited for Automated Assembly Processes Lead Free /RoHS Co mpliant (Note 4) Qualified t o AEC-Q11 Standards f or High Reliability Mechanical Data Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level 1 per J-STD-2C Terminals: Solderable per MIL-STD-22, Method 28 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Polarity: See Diagram Marking: Marking Code & Date Code (See Page 4) Weight:.8 grams (approximate) E A TOP VIEW D G H J B K C L M SOT-23 Dim Min Max A B C D E.45.6 G H J.13.1 K L M All Dimensions in m m Maximum T A = 25 C unless otherwise specified Characteristic Symbol Value Unit Forward I F = 1mA V F.9 V Power Dissipation (Note 1) P d 3 mw Power Disspation (Note 3) P d 35 mw Thermal Resistance, Junction to Ambient Air (Note 1) R JA 417 C/W Thermal Resistance, Junction to Ambient Air (Note 3) R JA 357 C/W Operating and Storage Temperature Range T j, T STG -65 to +15 C 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at 2. Short duration test pulse used to minimize self-heating effect. 3. Valid provided the terminals are kept at ambient temperature. 4. No purposefully added lead. DS181 Rev of 4 BX84C2V4 - BX84C39 Diodes Incorporated
3 Electri cal Character isti T A = 25 C unless otherwise specified Type Number Marking Code ener Vol Range (Note 5) tage Maximum e Impedance (Note 6) ner Maximum Reverse Curre nt (Note 5) Typical Temperat I T mv/ C I T I T I T I K I R V R Min Max Nom (V) Min (V) Max (V) (ma) ( ) ( ) (ma) ( A) (V) BX84C2V4 KB BX84C2V7 KC BX84C3V KD BX84C3V3 KE BX84C3V6 KF BX84C3V9 KG BX84C4V3 KH BX84C4V7 K BX84C5V1 K BX84C5V6 K BX84C6V2 K BX84C6V8 K BX84C7V5 K BX84C8V2 K BX84C9V1 K BX84C1 K BX84C11 KY BX84C12 KY BX84C13 KY BX84C15 KY BX84C16 KY BX84C18 KY BX84C2 KY BX84C22 KY BX84C24 KY BX84C27 KYA BX84C3 KYB BX84C33 KYC BX84C36 KYD BX84C39 KYE ure 5. Short duration test pulse used to minimize self-heating effect. 6. f = 1KHz. DS181 Rev of 4 BX84C2V4 - BX84C39
4 5 5 C2V7 C3V9 C5V6 P, POWER DISSIPATION (mw) d Note 1 Note 3 I, ENER CURRENT (ma) Test Current I 5.mA C3V3 C4V7 C6V8 C8V2 C9V1 1 2 T A, Ambient Temperature, ( C) Fig. 1 Power Derating Curve V, ENER VOLTAGE (V) Fig. 2 ener Breakdown Characteristics 3 C1 1 C12 I, ENER CURRENT (ma) 2 1 Test current I 5mA C15 C18 C22 C27 Test current I 2mA C33 C36 C T, TOTAL CAPACITANCE (pf) 1 V = 2V R V = 1V R V = 2V R V = 1V R C V, ENER VOLTAGE (V) Fig. 3 ener Breakdown Characteristics V, NOMINAL ENER VOLTAGE (V) Fig. 4 Total Capacitance vs Nominal ener Voltage DS181 Rev of 4 BX84C2V4 - BX84C39
5 Orderi ng Inform ation (Note 7) Device Packaging Shipping (Type Number)-7-F SOT-23 3/Tape & Reel * Add -7-F to the appropriate type number in Table 1 (on Page 2). Example: 6.2V ener = BX84C6V2-7-F. 7. For Packaging Details, go to our website at Marking I nformat ion XXX YM XXX = Product Type Marking Code (See Page 2) YM = Date Code Marking Y = Year ex: N = 22 M = Month ex: 9 = September Date Code Key Year Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS181 Rev of 4 BX84C2V4 - BX84C39
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A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS 2 V V GS Max ± 2 V R DSon) max @V GS = V) 24 m * PD - 9787A HEXFET Power MOSFET R DSon) max @V GS = 4.V) 4 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits
N-Channel 20-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features
Low forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package
Rev. 6 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C
Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C
2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High
SMF05C. TVS Diode Array For ESD and Latch-Up Protection PRELIMINARY. PROTECTION PRODUCTS Description. Features. Mechanical Characteristics
Description The SMF series TVS arrays are designed to protect sensitive electronics from damage or latchup due to ESD and other voltageinduced transient events. They are designed for use in applications
High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC
Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package
1SMB5.0AT3G Series, SZ1SMB5.0AT3G Series. 600 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional
1SMBAT3G Series, SZ1SMBAT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The SMB series is designed to protect voltage sensitive components from high voltage, high energy
MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS MARKING DIAGRAM
MPSA92, High Voltage Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA92 MPSA92 V CEO V CBO 200
Schottky Rectifier, 1.0 A
Schottky Rectifier, 1.0 A VS-BQ040-M3 Cathode Anode PRODUCT SUMMARY Package SMB I F(AV) 1.0 A V R 40 V V F at I F 0.38 V I RM 9 ma at 125 C T J max. 150 C Diode variation Single die E AS 3.0 mj FEATURES
MC74AC138, MC74ACT138. 1-of-8 Decoder/Demultiplexer
-of-8 Decoder/Demultiplexer The MC74AC38/74ACT38 is a high speed of 8 decoder/demultiplexer. This device is ideally suited for high speed bipolar memory chip select address decoding. The multiple input
AP1509. 150KHz, 2A PWM BUCK DC/DC CONVERTER. Description. Pin Assignments V IN. Applications. Features. (Top View) GND GND. Output AP1509 GND GND
Description Pin Assignments The series are monolithic IC designed for a stepdown DC/DC converter, and own the ability of driving a 2A load without additional transistor. It saves board space. The external
1.0A LOW DROPOUT LINEAR REGULATOR
1.0A LOW DROPOUT LINEAR REGULATOR Description Pin Assignments The is a low dropout three-terminal regulator with 1.0A output current ability, and the dropout voltage is specified at typical 1.1V at 1.0A
Silicon PIN Photodiode
VEMD940F Silicon PIN Photodiode DESCRIPTION VEMD940F is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is
LC03-6. Low Capacitance TVS for High-Speed Data Interfaces. Features. Description. Mechanical Characteristics. Applications
Description The LC0- transient voltage suppressor is designed to protect components which are connected to high speed telecommunication lines from voltage surges caused by lightning, electrostatic discharge
MBR2045CT SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS
Preferred Device... using the Schottky Barrier principle with a platinum barrier metal. These state of the art devices have the following features: Guardring for Stress Protection Low Forward Voltage 150
Advanced Monolithic Systems
Advanced Monolithic Systems FEATURES Three Terminal Adjustable or Fixed oltages* 1.5, 1.8, 2.5, 2.85, 3.3 and 5. Output Current of 1A Operates Down to 1 Dropout Line Regulation:.2% Max. Load Regulation:.4%
BC337, BC337-25, BC337-40. Amplifier Transistors. NPN Silicon. These are Pb Free Devices. http://onsemi.com. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
50 W Power Resistor, Thick Film Technology, TO-220
50 W Power Resistor, Thick Film Technology, TO-220 FEATURES 50 W at 25 C heatsink mounted Adjusted by sand trimming Leaded or surface mount versions High power to size ratio Non inductive element Material
Schottky Rectifier, 1 A
Schottky Rectifier, 1 A BQPbF FEATURES SMB Cathode Anode Small foot print, surface mountable Low forward voltage drop High frequency operation Available RoHS* COMPLIANT Guard ring for enhanced ruggedness
BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. http://onsemi.com MAXIMUM RATINGS
B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR MAXIMUM RATINGS Collector - Emitter oltage Collector - Base oltage Rating Symbol alue Unit CEO 65 45
Dual P-Channel 2.5 V (G-S) MOSFET
Si593DC Dual P-Channel.5 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).55 at V GS = -.5 V ±.9 -.8 at V GS = - 3.6 V ±.7.6 at V GS = -.5 V ±. FEATURES Halogen-free According to IEC 69-- Definition
AP331A XX G - 7. Lead Free G : Green. Packaging (Note 2)
Features General Description Wide supply Voltage range: 2.0V to 36V Single or dual supplies: ±1.0V to ±18V Very low supply current drain (0.4mA) independent of supply voltage Low input biasing current:
SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS
1N5817 and 1N5819 are Preferred Devices... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction