N- and P-Channel 20 V (D-S) MOSFET

Transcription

1 Si555CDC N- and P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) N-Channel. at V GS =.5 V g 6.5 nc.36 at V GS =.5 V g.5 at V GS =.8 V g FEATURES Halogen-free According to IEC 69-- Definition TrenchFET Power MOSFETs % R g Tested Compliant to RoHS Directive /95/EC P-Channel -. at V GS = -.5 V - g 6. nc. at V GS = -.5 V - g.56 at V GS = -.8 V APPLICATIONS Load Switch for Portable Devices 6-8 ChipFET D S D D 3. mm S G D D S G Marking Code EH XXX Part # Code Lot Traceability and Date Code G G Bottom View.8 mm Ordering Information: Si555CDC-T-E3 (Lead (Pb)-free) Si555CDC-T-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 5 C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS - V Gate-Source Voltage V GS ± 8 T C = 5 C g - g T Continuous Drain Current (T J = 5 C) C = 7 C I g D T A = 5 C b, c, g - 3. b, c T A = 7 C b, c, g -.5 b, c A Pulsed Drain Current I DM - T C = 5 C Source Drain Current Diode Current I S T A = 5 C.7 b, c -.7 b, c T C = 5 C T C = 7 C.. Maximum Power Dissipation P D W T A = 5 C. b, c.3 b, c T A = 7 C.3 b, c.8 b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 Soldering Recommendations (Peak Temperature) d, e 6 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient b, f t 5 s R thja C/W Maximum Junction-to-Foot (Drain) Steady State R thjf 3 33 Notes: a. Based on T C = 5 C. b. Surface mounted on " x " FR board. c. t = 5 s. d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is C/W for N-Channel and 3 C/W for P-Channel. g. Package limited. Document Number: 6877 S-58-Rev. B, 8-Mar- Symbol N-Channel P-Channel Typ. Max. Typ. Max. C Unit

2 Si555CDC SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. a Max. Unit Static V GS = V, I D = 5 µa N-Ch Drain-Source Breakdown Voltage V DS V GS = V, I D = - 5 µa P-Ch - I D = 5 µa N-Ch 8 V DS Temperature Coefficient ΔV DS /T J I D = - 5 µa P-Ch - 9 I D = 5 µa N-Ch -.7 V GS(th) Temperature Coefficient ΔV GS(th) /T J I D = - 5 µa P-Ch.5 V DS = V GS, I D = 5 µa N-Ch..8 Gate Threshold Voltage V GS(th) V DS = V GS, I D = - 5 µa P-Ch Gate-Body Leakage I GSS V DS = V, V GS = ± 8 V N-Ch P-Ch - V DS = V, V GS = V N-Ch Zero Gate Voltage Drain Current I DSS V DS = - V, V GS = V P-Ch - V DS = V, V GS = V, T J = 55 C N-Ch V DS = - V, V GS = V, T J = 55 C P-Ch - On-State Drain Current b I D(on) V DS 5 V, V GS =.5 V N-Ch V DS - 5 V, V GS = -.5 V P-Ch - V GS =.5 V, I D = 6. A N-Ch.3.36 V GS = -.5 V, I D = - 3. A P-Ch.83. Drain-Source On-State Resistance b R DS(on) V GS =.5 V, I D = 5.6 A N-Ch.3. V GS = -.5 V, I D = -.8 A P-Ch.. V GS =.8 V, I D = 5. A N-Ch..5 V GS = -.8 V, I D = -.5 A P-Ch.3.56 V DS = V, I D = 6. A Forward Transconductance b N-Ch. g fs V DS = - V, I D = - 3. A P-Ch 9.5 Dynamic a N-Ch 63 Input Capacitance C iss N-Channel P-Ch 55 V DS = V, V GS = V, f = MHz N-Ch 8 Output Capacitance C oss P-Channel P-Ch 7 Reverse Transfer Capacitance C rss V DS = - V, V GS = V, f = MHz N-Ch P-Ch 5 V DS = V, V GS = 5 V, I D = 6. A N-Ch Total Gate Charge Q g V DS = - V, V GS = - 5 V, I D = - 3. A P-Ch 7 N-Ch V DS = V, V GS =.5 V, I D = 6. A N-Ch. Gate-Source Charge Q gs P-Channel P-Ch.85 N-Channel P-Ch Gate-Drain Charge Q gd V DS = - V, V GS = -.5 V, I D = - 3. A N-Ch.9 P-Ch.75 Gate Resistance R g f = MHz N-Ch P-Ch. 6.. V mv/ C V na µa A Ω S pf nc Ω Document Number: 6877 S-58-Rev. B, 8-Mar-

3 Si555CDC SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. a Max. Unit Dynamic a N-Ch Turn-On Delay Time t d(on) N-Channel P-Ch 3 6 V DD = V, R L =. Ω N-Ch 8 8 Rise Time t r I D.8 A, V GEN = 8 V, R g = Ω P-Ch 7 Turn-Off Delay Time t d(off) P-Channel N-Ch 8 7 V DD = - V, R L =. Ω P-Ch 3 I D -. A, V GEN = - 8 V, R g = Ω N-Ch 8 6 Fall Time t f P-Ch 6 ns N-Ch 7 Turn-On Delay Time t d(on) N-Channel P-Ch V DD = V, R L =. Ω N-Ch 9 8 Rise Time t r I D.8 A, V GEN =.5 V, R g = Ω P-Ch 3 8 Turn-Off Delay Time t d(off) P-Channel V DD = - V, R L =. Ω N-Ch P-Ch Fall Time t f I D -. A, V GEN = -.5 V, R g = Ω N-Ch P-Ch 6 Drain-Source Body Diode Characteristics N-Ch.6 Continuous Source-Drain Diode Current I S T C = 5 C P-Ch -.6 Pulse Diode Forward Current a N-Ch I SM P-Ch - A I S =.8 A, V GS = V N-Ch.8. Body Diode Voltage V SD I S = -. A, V GS = V P-Ch V N-Ch 7 Body Diode Reverse Recovery Time t rr P-Ch 3 ns N-Channel N-Ch 3 5 Body Diode Reverse Recovery Charge Q rr I F =.8 A, di/dt = A/µs, T J = 5 C P-Ch 3 nc N-Ch 6 Reverse Recovery Fall Time t a P-Channel I F = -. A, di/dt = - A/µs, T J = 5 C P-Ch 7 N-Ch 5 Reverse Recovery Rise Time t b P-Ch ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 3 µs, duty cycle %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 6877 S-58-Rev. B, 8-Mar- 3

4 Si555CDC N-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwise noted V GS =5V thru V I D - Drain Current (A) 6 V GS =.5V 8 V GS =V 3 5 I D - Drain Current (A) 3 T C = 5 C T C = 5 C T C = - 55 C V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics.75 - On-Resistance (Ω) R DS(on) V GS =.8V V GS =.5V V GS =.5V C - Capacitance (pf) 8 6 C oss C iss. 8 6 I D - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage 5 C rss 8 6 V DS - Drain-to-Source Voltage (V) Capacitance.8 I D =6A - Gate-to-Source Voltage (V) V GS 3 V DS =V V DS =6V R DS(on) - On-Resistance (Normalized).5..9 V GS =.5V, I D =5.6A V GS =.5V, I D =6A 6 8 Q g - Total Gate Charge (nc) Gate Charge T J -Junction Temperature ( C) On-Resistance vs. Junction Temperature Document Number: 6877 S-58-Rev. B, 8-Mar-

5 Si555CDC N-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwise noted.6 I D =6A.5 I S - Source Current (A) T J = 5 C T J = 5 C - On-Resistance (Ω) R DS(on)..3. T J = 5 C T J =5 C V SD -Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.7 3 (V) V GS(th).6.5 I D = 5 µa Power (W) T J - Temperature ( C) Threshold Voltage Time (s) Single Pulse Power Limited by R DS(on) * - Drain Current (A) I D. T A =5 C Single Pulse BVDSS Limited µs ms ms ms s s DC.. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 6877 S-58-Rev. B, 8-Mar- 5

6 Si555CDC N-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwise noted 8 I D - Drain Current (A) 6 Package Limited T C - Case Temperature ( C) Current Derating* Power (W)..6 Power (W) T C - Case Temperature ( C) Power Derating, Junction-to-Foot T A -Ambient Temperature ( C) Power Derating, Junction-to-Ambient * The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 6 Document Number: 6877 S-58-Rev. B, 8-Mar-

7 Si555CDC N-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwise noted Duty Cycle =.5 Normalized Effective Transient Thermal Impedance T JM -T A =P DM Z (t) thja. Single Pulse. Surface Mounted Square Wave Pulse Duration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja = 9 C/W Duty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 6877 S-58-Rev. B, 8-Mar- 7

8 Si555CDC P-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwise noted V GS =5V thru V Drain Current (A) I D 6 V GS =.5V I D - Drain Current (A).8. T C = 5 C T C = 5 C.6 V GS =V 3 5 V DS - Drain-to-Source Voltage (V) Output Characteristics. T C = - 55 C V GS - Gate-to-Source Voltage (V) Transfer Characteristics 9 - On-Resistance (Ω) R DS(on) V GS =.8V V GS =.5V V GS =.5V C - Capacitance (pf) C oss C iss. 6 8 I D - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage 5 C rss 8 6 V DS - Drain-to-Source Voltage (V) Capacitance.5 - Gate-to-Source Voltage (V) V GS 3 I D =3.A V DS =V V DS =6V - On-Resistance R DS(on) (Normalized).3..9 V GS = -.5 V, I D =-.8 A V GS =-.5V, I D =-3.A Q g - Total Gate Charge (nc) Gate Charge T J -Junction Temperature ( C) On-Resistance vs. Junction Temperature 8 Document Number: 6877 S-58-Rev. B, 8-Mar-

9 Si555CDC P-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwise noted.8 I D = - 3. A.5 - Source Current (A) I S T J = 5 C T J = 5 C - On-Resistance (Ω) R DS(on) T J = 5 C T J =5 C V SD -Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.7 3 (V) V GS(th).6.5. I D = 5 µa Power (W) T J - Temperature ( C) Threshold Voltage Time (s) Single Pulse Power - Drain Current (A) I D. Limited by R DS(on) * T A = 5 C Single Pulse BVDSS Limited µs ms ms ms s,s DC.. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 6877 S-58-Rev. B, 8-Mar- 9

10 Si555CDC P-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwise noted 6 5 I D - Drain Current (A) 3 Package Limited T C - Case Temperature ( C) Current Derating* Power (W)..6 Power (W) T C - Case Temperature ( C) T A -Ambient Temperature ( C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 6877 S-58-Rev. B, 8-Mar-

11 t i l i f f i l i f f t i i Si555CDC P-CHANNEL TYPICAL CHARACTERISTICS 5 C, unless otherwise noted N o r m a z e d E e c v e T r a n s e n t T h e r m a l I m p e d a n c e t Duty Cycle =.5.. Notes: P DM..5. t t. Duty Cycle, D = t. Per Unit Base = R thja = C/W 3. T JM - T A = P DM Z (t) thja Single Pulse. Surface Mounted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient N o r m a z e d E e c v e T r a n s e n t T h e r m a l I m p e d a n c e. Duty Cycle = Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?6877. Document Number: 6877 S-58-Rev. B, 8-Mar-

12 Package Information 6-8 ChipFET D L E E 3 3 S e b c x Backside View X./.3 R A C DETAIL X NOTES:. All dimensions are in millimeaters.. Mold gate burrs shall not exceed.3 mm per side. 3. Leadframe to molded body offset is horizontal and vertical shall not exceed.8 mm.. Dimensions exclusive of mold gate burrs. 5. No mold flash allowed on the top and bottom lead surface. MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A b c c.38.5 D E E e.65 BSC.56 BSC L S.55 BSC. BSC 5 Nom ECN: C-358 Rev. F, 9-Jan- DWG: Nom Document Number: 75 5-Jan-

13 AN8 Dual-Channel 6-8 ChipFET Power MOSFET Recommended Pad Pattern and Thermal Performance INTRODUCTION New ChipFETs in the leadless 6-8 package feature the same outline as popular 6-8 resistors and capacitors but provide all the performance of true power semiconductor devices. The 6-8 ChipFET has the same footprint as the body of the LITTLE FOOT TSOP-6, and can be thought of as a leadless TSOP-6 for purposes of visualizing board area, but its thermal performance bears comparison with the much larger SO-8. 5 mil 8 mil 3 mil This technical note discusses the dual ChipFET 6-8 pin-out, package outline, pad patterns, evaluation board layout, and thermal performance. 8 mil mil PIN-OUT FIGURE. 6 mil Footprint With Copper Spreading Figure shows the pin-out description and Pin identification for the dual-channel 6-8 ChipFET device. The pin-out is similar to the TSOP-6 configuration, with two additional drain pins to enhance power dissipation and thus thermal performance. The legs of the device are very short, again helping to reduce the thermal path to the external heatsink/pcb and allowing a larger die to be fitted in the device if necessary. D D Document Number: 77 -Dec-3 Dual 6-8 ChipFET D D FIGURE. S G For package dimensions see the 6-8 ChipFET package outline drawing ( BASIC PAD PATTERNS The basic pad layout with dimensions is shown in Application Note 86, Recommended Minimum Pad Patterns With Outline Drawing Access for MOSFETs, ( This is sufficient for low power dissipation MOSFET applications, but power semiconductor performance requires a greater copper pad area, particularly for the drain leads. S G The pad pattern with copper spreading shown in Figure improves the thermal area of the drain connections (pins 5 and 6, pins 7 and 8) while remaining within the confines of the basic footprint. The drain copper area is.9 sq. in. or. sq. mm. This will assist the power dissipation path away from the device (through the copper leadframe) and into the board and exterior chassis (if applicable) for the dual device. The addition of a further copper area and/or the addition of vias to other board layers will enhance the performance still further. An example of this method is implemented on the Vishay Siliconix Evaluation Board described in the next section (Figure 3). THE VISHAY SILICONIX EVALUATION BOARD FOR THE DUAL 6-8 The dual ChipFET 6-8 evaluation board measures.6 in by.5 in. Its copper pad pattern consists of an increased pad area around each of the two drain leads on the top-side approximately.6 sq. in. or 5.87 sq. mm and vias added through to the underside of the board, again with a maximized copper pad area of approximately the board-size dimensions, split into two for each of the drains. The outer package outline is for the 8-pin DIP, which will allow test sockets to be used to assist in testing. The thermal performance of the 6-8 on this board has been measured with the results following on the next page. The testing included comparison with the minimum recommended footprint on the evaluation board-size pcb and the industry standard one-inch square FR pcb with copper on both sides of the board.

14 AN8 Front of Board Back of Board ChipFET vishay.com FIGURE 3. THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 6-8 ChipFET measured as junction-to-foot thermal resistance is 3 C/W typical, C/W maximum for the dual device. The foot is the drain lead of the device as it connects with the body. This is identical to the dual SO-8 package R jf performance, a feat made possible by shortening the leads to the point where they become only a small part of the total footprint area. Junction-to-Ambient Thermal Resistance (dependent on pcb size) The typical R ja for the dual-channel 6-8 ChipFET is 9 C/W steady state, identical to the SO-8. Maximum ratings are C/W for both the 6-8 and the SO-8. Both packages have comparable thermal performance on the square pcb footprint with the 6-8 dual package having a quarter of the body area, a significant factor when considering board area. Testing To aid comparison further, Figure illustrates ChipFET 6-8 dual thermal performance on two different board sizes and three different pad patterns.the results display the thermal performance out to steady state and produce a graphic account on how an increased copper pad area for the drain connections can enhance thermal performance. The measured steady state values of R ja for the Dual 6-8 ChipFET are : ) Minimum recommended pad pattern (see Figure ) on the evaluation board size of.5 in x.6 in. ) The evaluation board with the pad pattern described on Figure 3. 3) Industry standard square pcb with maximum copper both sides. 85 C/W 8 C/W 9 C/W The results show that a major reduction can be made in the thermal resistance by increasing the copper drain area. In this example, a 57 C/W reduction was achieved without having to increase the size of the board. If increasing board size is an option, a further 38 C/W reduction was obtained by maximizing the copper from the drain on the larger square PCB. Thermal Resistance (C/W) SUMMARY Min. Footprint Dual EVB Square PCB Time (Secs) FIGURE. Dual 6-8 ChipFET The thermal results for the dual-channel 6-8 ChipFET package display identical power dissipation performance to the SO-8 with a footprint reduction of 8%. Careful design of the package has allowed for this performance to be achieved. The short leads allow the die size to be maximized and thermal resistance to be reduced within the confines of the TSOP-6 body size. ASSOCIATED DOCUMENT 6-8 ChipFET Single Thermal performance, AN8, ( Document Number: 77 -Dec-3

15 Application Note 86 RECOMMENDED MINIMUM PADS FOR 6-8 ChipFET.93 (.357) APPLICATION NOTE. (.559).8 (.3).36 (.9).6 (.65).6 (.6). (.) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index Document Number: 7593 Revision: -Jan-8

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