N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555

Transcription

1 and Available on commercial versio N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTX These and devices are military qualified up to a JANTX level for highreliability applicatio. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applicatio. Important: For the latest information, visit our website FEATURES JEDEC registered and number. JAN, JANTX, and JANTX qualificatio are available per MIL-PRF-19500/555. RoHS compliant versio available (commercial grade only). High frequency operation. Lightweight package. ESD rated to class 1A. APPLICATIONS / BENEFITS MAXIMUM T C = +25 C unless otherwise noted Parameters / Test Conditio Symbol alue Unit Junction & Storage Temperature T J, T stg -55 to +150 C Thermal Resistance Junction-to-Case (see Figure 1) R ӨJC 6.25 ºC/W Total Power Dissipation (1) P T 0.8 W Drain to Gate oltage 100 DG 200 Drain Source oltage Gate Source oltage GS ± 20 Drain Current, T C = +25 C (2) 6.0 I D1 A (see Figure?) 3.5 Drain Current, T C = +100 C Off-State Current (3) Source Current DS I D2 I DM A A (pk) Notes: 1. Derated linearly by 0.16 W/ C for T C > +25 C. 2. The following formula derives the maximum theoretical I D limit. I D is also limited by package and internal wires and may be limited due to pin diameter. 3. I DM = 4 x I D1; I D1 as calculated in note 2. I S A TO-205AF (formerly TO-39) Package Also available in: U-18 LCC Package (surface mount) U & U MSC Lawrence 6 Lake Street, Lawrence, MA Tel: or (978) Fax: (978) MSC Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) Fax: +353 (0) Website: T4-LDS-0164, Rev. 1 (121482) 2012 Microsemi Corporation Page 1 of 7

2 and MECHANICAL and PACKAGING CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin plate (commercial grade only). MARKING: Part number, date code, manufacturer s ID. WEIGHT: Approximately grams. See Package Dimeio on last page. PART NOMENCLATURE JAN (e3) Reliability Level JAN=JAN level JANTX=JANTX level JANTX=JANTX level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-rohs compliant JEDEC type number Symbol I D I F T C DD DS GS Drain current. Forward current. Case temperature. Drain supply voltage. Drain to source voltage. Gate to source voltage. SYMBOLS & DEFINITIONS Definition T4-LDS-0164, Rev. 1 (121482) 2012 Microsemi Corporation Page 2 of 7

3 and ELECTRICAL T A = +25 C, unless otherwise noted OFF CHARACTERTICS Drain-Source Breakdown oltage GS = 0, I D = 1 ma (BR)DSS Gate-Source oltage (Threshold) DS GS, I D = 0.25 ma DS GS, I D = 0.25 ma, T j = +125 C DS GS, I D = 0.25 ma, T j = -55 C GS(th)1 GS(th)2 GS(th) Gate Current GS = ±20, DS = 0 GS = ±20, DS = 0, T j = +125 C I GSS1 I GSS2 ±100 ±200 na ON CHARACTERISTICS Drain Current GS = 0, DS = 80 GS = 0, DS = 160 Drain Current GS = 0, DS = 80, T j = +125 C GS = 0, DS = 160, T j = +125 C Static Drain-Source On-State Resistance GS = 10, I D = 3.5 A pulsed GS = 10, I D = 2.25 A pulsed Static Drain-Source On-State Resistance GS = 10, I D = 6.0 A pulsed GS = 10, I D = 3.5 A pulsed Static Drain-Source On-State Resistance T j = +125 C: GS = 10, I D = 3.5 A pulsed GS = 10, I D = 2.25 A pulsed Diode Forward oltage GS = 0, I D = 6.0 A pulsed GS = 0, I D = 3.5 A pulsed I DSS1 25 µa I DSS ma r DS(on)1 r DS(on)2 r DS(on)3 SD Ω Ω Ω T4-LDS-0164, Rev. 1 (121482) 2012 Microsemi Corporation Page 3 of 7

4 and ELECTRICAL T A = +25 C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Gate Charge: On-State Gate Charge GS = 10, I D = 6.0 A, DS = 50 GS = 10, I D = 3.5 A, DS = 100 Gate to Source Charge GS = 10, I D = 6.0 A, DS = 50 GS = 10, I D = 3.5 A, DS = 100 Gate to Drain Charge GS = 10, I D = 6.0 A, DS = 50 GS = 10, I D = 3.5 A, DS = 100 Q g(on) Q gs Q gd nc nc nc SWITCHING CHARACTERISTICS Turn-on delay time I D = 6.0 A, GS = 10, R G = 7.5 Ω, DD = 35 I D = 3.5 A, GS = 10, R G = 7.5 Ω, DD = 74 Rie time I D = 6.0 A, GS = 10, R G = 7.5 Ω, DD = 35 I D = 3.5 A, GS = 10, R G = 7.5 Ω, DD = 74 Turn-off delay time I D = 6.0 A, GS = 10, R G = 7.5 Ω, DD = 35 I D = 3.5 A, GS = 10, R G = 7.5 Ω, DD = 74 Fall time I D = 6.0 A, GS = 10, R G = 7.5 Ω, DD = 35 I D = 3.5 A, GS = 10, R G = 7.5 Ω, DD = 74 Diode Reverse Recovery Time di/dt = 100 A/µs, DD 50, I F = 6.0 A di/dt = 100 A/µs, DD 50, I F = 3.5 A t d(on) 40 t r t d(off) t f t rr T4-LDS-0164, Rev. 1 (121482) 2012 Microsemi Corporation Page 4 of 7

5 and GRAPHS t 1, RECTANGULAR PULSE DURATION (SECONDS) Figure 1 Thermal Impedance Curves THERMAL RESPONSE (ZӨJC) T C CASE TEMPERATURE ( C) T C CASE TEMPERATURE ( C) () () Figure 2 Maximum Drain Current vs. Case Temperature Graph T4-LDS-0164, Rev. 1 (121482) 2012 Microsemi Corporation Page 5 of 7

6 and GRAPHS (continued) DS, DRAIN-TO-SOURCE OLTAGE (OLTS) Maximum Safe Operating Area () DS, DRAIN-TO-SOURCE OLTAGE (OLTS) Maximum Safe Operating Area () T4-LDS-0164, Rev. 1 (121482) 2012 Microsemi Corporation Page 6 of 7

7 and PACKAGE DIMENSIONS Dimeio Ltr Inch Millimeters Notes Min Max Min Max CD CH HD h J k , 4 LD , 8 LL , 8, 12 LS.200 TP 5.08 TP 6 LU , 8 L , 8 L , 8 P Q r α 45 TP 45 TP 6 SCHEMATIC CIRCUIT NOTES: 1. Dimeio are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TL shall be held for a minimum length of.011 inch (0.28 mm). 4. Dimeion TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane inch ( mm) below seating plane shall be within.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimeion LU applies between L1 and L2. Dimeion LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimeion r (radius) applies to both iide corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. 12. Lead 1 = source, lead 2 = gate, lead 3 = drain. T4-LDS-0164, Rev. 1 (121482) 2012 Microsemi Corporation Page 7 of 7