MTP3055E. N - CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET MOSFET
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1 MTP3055E N - CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET MOSFET TYPE V DSS R DS(on) I D MTP3055E 60 V < 0.15 Ω 12 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175 o C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) TO INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 60 V V DGR Drain- gate Voltage (R GS =20kΩ) 60 V V GS Gate-source Voltage ± 20 V I D Drain Current (continuous) at T c =25 o C 12 A IDM Drain Current (pulsed) at Tc = 100 o C 9 A I DM ( ) Drain Current (pulsed) 48 A P tot Total Dissipation at T c =25 o C 40 W T stg Storage Temperature -65 to 175 o C Tj Max. Operating Junction Temperature 175 o C ( ) Pulse width limited by safe operating area First digit of the datecode being Z or K identifies silicon characterized in this datasheet. July /8
2 THERMAL DATA R thj-case R thj-amb R thc-s T l Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W oc/w o C/W o C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I AR Avalanche Current, Repetitive or Not-Repetitive 12 A (pulse width limited by T j max) E AS Single Pulse Avalanche Energy (starting T j =25 o C, I D =I AR,V DD =25V) 50 mj ELECTRICAL CHARACTERISTICS (Tcase =25 o C unless otherwise specified) OFF Symbol Parameter Test Conditio Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage I D =250µA V GS =0 60 V I DSS I GSS Zero Gate Voltage Drain Current (V GS =0) Gate-body Leakage Current (VDS =0) V DS =MaxRating V DS =MaxRatingx0.8 T c =125 o C V GS = ± 20 V ± 100 na 1 10 µa µa ON ( ) Symbol Parameter Test Conditio Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage V DS =V GS I D = 250 µa V R DS(on) Static Drain-source On Resistance V GS =10V I D =7A Ω I D(on) On State Drain Current V DS >I D(on) xr DS(on )max V GS =10V 12 A DYNAMIC Symbol Parameter Test Conditio Min. Typ. Max. Unit g fs ( ) Forward Traconductance V DS >I D(on) xr DS(on )max I D =6A 4 6 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Trafer Capacitance V DS =25V f=1mhz V GS = pf pf pf 2/8
3 ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbol Parameter Test Conditio Min. Typ. Max. Unit td(on) t r td(off) t f Q g Q gs Q gd Turn-on Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =30V ID=7A R G =50 Ω V GS =10V (see test circuit) I D =12A V GS =10V V DD =40V (see test circuit) nc nc nc SOURCE DRAIN DIODE Symbol Parameter Test Conditio Min. Typ. Max. Unit I SD Source-drain Current Source-drain Current A A I SDM ( ) (pulsed) V SD ( ) Forward On Voltage I SD =12A V GS =0 2.0 V t rr Reverse Recovery I SD = 12 A di/dt = 100 A/µs 65 Q rr Time Reverse Recovery Charge V DD =30V T j = 150 o C 0.17 µc ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8
4 Output Characteristics Trafer Characteristics Traconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variatio 4/8
5 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8
6 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8
7 TO-220 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D D E F F F G G H L L L L L L DIA D1 F G C D A E L2 G1 H2 F1 Dia. L5 L7 L9 F2 L6 L4 P011C 7/8
8 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no respoibility for the coequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licee is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8
9 Copyright Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : 100% Free DataSheet Search Site. Free Download. No Register. Fast Search System.
Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V
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