ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE

Transcription

1 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V (BR)DSS = 60V; R DS(ON) = ;I D = 1.8A P-Channel V (BR)DSS = -60V; R DS(ON) = ;I D = -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low On - Resistance Fast switching speed Low threshold SM8 S 1 S 4 G 1 G 4 Low gate drive Low profile SOIC package D, 1 D 2 D, 3 D 4 APPLICATIONS Motor Drive G 2 G 3 S 2 S 3 ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMHC6A07T8TA 7 12mm 1000 units ZXMHC6A07T8TC 13 12mm 4000 units PINOUT DIAGRAM DEVICE MARKING ZXMH C6A07 Top View 1 SEMICONDUCTORS

2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL N-Channel P-Channel UNIT Drain-Source Voltage V DSS V Gate-Source Voltage V GS V Continuous Drain Current@V GS =10V; T A =25 C GS =10V; T A =70 C GS =10V; T A =25 C (a)(d) I D Pulsed Drain Current (c) I DM A Continuous Source Current (Body Diode) (b) I S A Pulsed Source Current (Body Diode) (c) I SM A Power Dissipation at TA=25 C (a)(d) Linear Derating Factor Power Dissipation at TA=25 C (b)(d) Linear Derating Factor P D P D Operating and Storage Temperature Range T j :T stg -55 to +150 C A A W mw/ C W mw/ C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R θja 96 C/W Junction to Ambient (b)(d) R θja 73 C/W Notes (a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured 1.6mm at t 10sec. (c) Repetitive rating - 50mm x 50mm x 1.6mm FR4 PCB, D = 0.2, pulse width 300 S pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. SEMICONDUCTORS 2

3 TYPICAL CHARACTERISTICS 3 SEMICONDUCTORS

4 N-CHANNEL ELECTRICAL CHARACTERISTICS (at T amb = 25 C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS 60 V I D =250µA, V GS =0V Zero Gate Voltage Drain Current I DSS 1 µa V DS =60V, V GS =0V Gate-Body Leakage I GSS 100 na V GS =±20V, V DS =0V Gate-Source Threshold Voltage V GS(th) V I =250µA, V D DS =V GS Static Drain-Source On-State Resistance (1) R DS(on) Ω Ω V GS =10V, I D =1.8A V GS =4.5V, I D =1.3A Forward Transconductance (1)(3) g fs 2.3 S V DS =15V,I D =1.8A DYNAMIC (3) Input Capacitance C iss 166 pf Output Capacitance C oss 19.5 pf V DS =40V, V GS =0V, f=1mhz Reverse Transfer Capacitance C rss 8.7 pf SWITCHING (2) (3) Turn-On Delay Time t d(on) 1.8 ns Rise Time t r 1.4 ns Turn-Off Delay Time t d(off) 4.9 ns Fall Time t f 2.0 ns V DD =30V, I D =1.8A R G 6.0Ω, V GS =10V Gate Charge Q g 1.65 nc V DS =30V,V GS =5V, I D =1.8A Total Gate Charge Q g 3.2 nc Gate-Source Charge Q gs 0.67 nc Gate-Drain Charge Q gd 0.82 nc SOURCE-DRAIN DIODE V DS =30V,V GS =10V, I D =1.8A Diode Forward Voltage (1) V SD V T J =25 C, I S =0.45A, V GS =0V Reverse Recovery Time (3) t rr 20.5 ns T J =25 C, I F =1.8A, Reverse Recovery Charge (3) Q rr 21.3 nc di/dt= 100A/µs NOTES (1) Measured under pulsed conditions. Width 300µs. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. SEMICONDUCTORS 4

5 P-CHANNEL ELECTRICAL CHARACTERISTICS (at T amb = 25 C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS -60 V I D =-250µA, V GS =0V Zero Gate Voltage Drain Current I DSS -1 A V DS =-60V, V GS =0V Gate-Body Leakage I GSS 100 na V GS =±20V, V DS =0V Gate-Source Threshold Voltage V GS(th) -1.0 V I =-250µA, V D DS =V GS Static Drain-Source On-State Resistance (1) R DS(on) Ω Ω V GS =-10V, I D =-0.9A V GS =-4.5V, I D =-0.8A Forward Transconductance (1)(3) g fs 1.8 S V DS =-15V,I D =-0.9A DYNAMIC (3) Input Capacitance C iss 233 pf Output Capacitance C oss 17.4 pf V DS =-30 V, V GS =0V, f=1mhz Reverse Transfer Capacitance C rss 9.6 pf SWITCHING(2) (3) Turn-On Delay Time t d(on) 1.3 ns Rise Time t r 21.3 ns V DD =-30V, I D =-1A Turn-Off Delay Time t d(off) 5.3 ns R G 6.0 Ω,V GS =-10V Fall Time t f 11.6 ns Gate Charge Q g 2.4 nc V DS =-30V,V GS =-5V, I D =-0.9A Total Gate Charge Q g 5.1 nc Gate-Source Charge Q gs 0.7 nc V DS =-30V,V GS =-10V, I D =-0.9A Gate-Drain Charge Q gd 0.7 nc SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD V T J =25 C, I S =-0.8A, V GS =0V Reverse Recovery Time (3) t rr 22.6 ns T J =25 C, I F =-0.9A, Reverse Recovery Charge (3) Q rr 23.2 nc di/dt= 100A/µs NOTES (1) Measured under pulsed conditions. Width 300µs. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. 5 SEMICONDUCTORS

6 N-CHANNEL TYPICAL CHARACTERISTICS SEMICONDUCTORS 6

7 N-CHANNEL TYPICAL CHARACTERISTICS 7 SEMICONDUCTORS

8 P-CHANNEL TYPICAL CHARACTERISTICS SEMICONDUCTORS 8

9 P-CHANNEL TYPICAL CHARACTERISTICS 9 SEMICONDUCTORS

10 DIM Millimetres Inches MIN TYP MAX MIN TYP MAX A A b c D E e e He Lp α β Zetex plc 2004 Europe Americas Asia Pacific Corporate Headquaters Zetex GmbH Streitfeldstraße 19 D München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY USA Zetex (Asia) Ltd Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex plc Fields New Road, Chadderton Oldham, OL9 8NP United Kingdom Telefon: (49) Fax: (49) europe.sales@zetex.com Telephone: (1) Fax: (1) usa.sales@zetex.com Telephone: (852) Fax: (852) asia.sales@zetex.com Telephone (44) Fax: (44) hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to SEMICONDUCTORS 10 SCZXMHC6A07T8DSE